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Two-dimensional material, and stripping method and application thereof

A technology of two-dimensional materials and solid materials, applied in the direction of luminescent materials, chemical instruments and methods, binary selenium/tellurium compounds, etc., can solve the problems of producing two-dimensional materials, stripping out two-dimensional materials, and not being able to achieve large-scale production , to achieve the effect of large sheet area, short peeling time and high repeatability

Active Publication Date: 2018-11-30
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, so far there is no well-defined method for exfoliating 2D materials from crystals that lack this multilayer structure.
Moreover, the currently reported methods for exfoliating two-dimensional materials are only limited to laboratory applications, and cannot achieve large-scale production of single-layer or few-layer two-dimensional materials.

Method used

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  • Two-dimensional material, and stripping method and application thereof
  • Two-dimensional material, and stripping method and application thereof
  • Two-dimensional material, and stripping method and application thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0039] Example 1 Preparation of 1,8-bis(4-(1,2,2-triphenylethenyl)naphthalene

[0040] Under the condition of nitrogen protection, add 1,8-dibromoanthracene and TPE phenyl borate (molar ratio is 1:2.5), tetrakis (triphenylphosphine) palladium, potassium carbonate into a single-necked bottle, and then add Appropriate amount of toluene and ethanol, stirred vigorously, kept the temperature at 90°C, refluxed for 24 hours, extracted, washed and filtered to obtain the primary product, and obtained high-purity 1,8-bis(4-(1, 2,2-triphenylethenyl) naphthalene, its synthetic route is as formula figure 1 shown. figure 2 For the 1,8-bis(4-(1,2,2-triphenylvinyl)naphthalene aggregation-induced luminescent material prepared in this example 1 H NMR spectrum. image 3 Obtain 1,8-two (4-(1,2,2-triphenylethenyl) naphthalene for this embodiment 13 C NMR image. Figure 4 The mass spectrum of 1,8-diTPE substituted naphthalene was obtained for this example. From Figure 1-Figure 4 It can be ...

Embodiment 2 2

[0041] The stripping of embodiment 2 molybdenum disulfide

[0042] Figure 6 It is a schematic flow chart of exfoliating two-dimensional materials in the present invention. The stripping method of the present invention is as follows: 1,8-di(4-(1,2,2-triphenylethenyl)naphthalene (0.1~5g) obtained in Example 1 and molybdenum disulfide ( 0.5g to 5g), mixed with 20mL ethanol and ground for 1 hour, then added a certain volume of ethanol (10 to 100mL) and ultrasonicated for 1 to 100 minutes, and then centrifugally filtered to obtain molybdenum disulfide with few layers or a single layer.

[0043] Figure 7 It is an electronic scanning SEM photo of molybdenum disulfide material exfoliated with 1,8-bis(4-(1,2,2-triphenylethenyl)naphthalene-induced luminescent molecules in this example, Figure 8 It is a TEM photo of molybdenum disulfide material exfoliated with 1,8-bis(4-(1,2,2-triphenylethenyl)naphthalene-induced luminescent molecules in this example. From Figure 7 and 8 It can...

Embodiment 3 2

[0044] The stripping of embodiment 3 tungsten diselenide

[0045] Aggregation-induced luminescent molecules and tungsten diselenide with a multi-layer structure are mixed according to the mass ratio of 1:0.1, and 1 mL of ethanol is added to grind for 1 min, then a certain volume of ethanol 10 mL is added for ultrasonication for 10 minutes, and then centrifuged to obtain few-layer or single-layer Tungsten diselenide. The target material is characterized by testing methods such as AFM and TEM, and the target material has only a single layer or a few layers.

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Abstract

The invention belongs to the technical field of semiconductor materials, and discloses a two-dimensional material, and a stripping method and application thereof. The two-dimensional material is prepared by the following steps: mixing aggregation-induced emission molecules with a solid material with a multilayer structure, adding a solvent, carrying out grinding, then adding a solvent, carrying out ultrasonic treatment, and carrying out centrifugal filtration. The solid material with a multilayer structure is graphite, hexagonal boron nitride, a transition-metal sulfide, a transition-metal selenide, a transition-metal oxide or black phosphorus. The method has the advantages of short stripping time, simple operation process and high repeatability, and the layers of the prepared two-dimensional material keep the characteristics of single layer or few layers, large layer area, and the like, and the two-dimensional material can be directly used to prepare semiconductor photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and more specifically relates to a two-dimensional material and its stripping method and application. Background technique [0002] The discovery of graphene not only enriches the family system of carbon materials, but also opens up a new research field for us - 2D (two-dimensional) materials. In the past decade, scientists have discovered many 2D materials, such as phosphorene, transition metal dichalcogenides, etc. (2D) materials. As representative 2D materials, including graphene and layered transition metal dichalcogenides (TMDs, such as MoS 2 or WS 2 etc.) and transition metal oxides (TMO, such as WO 3 etc.), hexagonal boron nitride (h-BN), etc. Due to its dimensionality reduction from three-dimensional layered bulk to single-layer or few-layer nanosheets in the thickness direction, many exotic physical properties are expected to inspire the next generation of technologic...

Claims

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Application Information

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IPC IPC(8): C01G41/00C01G39/06C01B19/04C01G41/02C01G39/02C01G45/02C01G33/00C01B25/02C01B32/225C01B21/064B82Y40/00C09K11/06C07C1/26C07C15/58
CPCB82Y40/00C01B19/007C01B21/0648C01B25/003C01B25/02C01B32/225C01G33/00C01G39/02C01G39/06C01G41/00C01G41/02C01G45/02C01P2004/24C01P2004/64C07C15/58C09K11/06C09K2211/1007C09K2211/1011
Inventor 冯星胡真高伟杨亿斌李京波
Owner GUANGDONG UNIV OF TECH
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