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164 results about "Phosphorene" patented technology

Phosphorene is a two-dimensional material and allotrope of phosphorus. Phosphorene can be viewed as a single layer of black phosphorus, much in the same way that graphene is a single layer of graphite. Phosphorene is predicted to be a strong competitor to graphene because, in contrast to graphene, phosphorene has a band gap. Phosphorene was first isolated in 2014 by mechanical exfoliation.

Electron injection nanostructured semiconductor material anode electroluminescence method and device

Embodiments of the invention include methods and devices for producing light by injecting electrons from field emission cathode across a gap into nanostructured semiconductor materials, electrons issue from a separate field emitter cathode and are accelerated by a voltage across a gap towards the surface of the nanostructured material that forms part of the anode. At the nanostructure material, the electrons undergo electron-hole (e-h) recombination resulting in electroluminescent (EL) emission. In a preferred embodiment lighting device, a vacuum enclosure houses a field emitter cathode. The vacuum enclosure also houses an anode that is separated by a gap from said cathode and disposed to receive electrons emitted from the cathode. The anode includes semiconductor light emitting nano structures that accept injection of electrons from the cathode and generate photons in response to the injection of electrons. External electrode contacts permit application of a voltage differential across the anode and cathode to stimulate electron emissions from the cathode and resultant photon emissions from the semiconductor light emitting nanostructures of the anode. Embodiments of the invention also include the usage of nanostructured semiconductor materials as phosphors for conventional planar LED and nanowire array light emitting diodes and CFL. For the use in conventional planar LEDs, the nanostructures may take the form of quantum dots, nanotubes, branched tree-like nanostructure, nanoflower, tetrapods, tripods, axial heterostructures nanowires hetero structures.
Owner:RGT UNIV OF CALIFORNIA

Black phosphorene as well as preparation method and application thereof

The invention discloses a black phosphorene as well as a preparation method and application thereof. The preparation method comprises the following steps: after the black phosphorene is weighed and grinded, putting in N-methyl pyrrolidone solvent; under an ice bath condition, smashing in an ultrasonic wave cell pulverizer; carrying out centrifugation on obtained solution; and taking supernate to obtain the black phosphorene. The black phosphorene nanosheet prepared with the preparation method of the invention can stably exist under an atmospheric environment. A black phosphorus block is dippedin the N-methyl pyrrolidone solvent, bonds among black phosphorus (nanometer lamellar body) layers are beaten by ultrasonic wave to enable the bonds to be broken, a lamellar structure is loosened andseparated, and a centrifuge is used to separate the lamellar structure to obtain a lamellar nanometer structure. The method is simple and easy in implementation, the centrifuge can carry out filtering according to different sizes to obtain high-quality nanometer slices with different thickness, controllability is higher, and the volume production of the black phosphorus nanometer sheet can be realized. An electrochemistry performance test proves that a polymer solar cell assembled by the black phosphorene synthesized with the method has high electrochemical performance.
Owner:QINGDAO UNIV

Black phosphorene-containing graphene flexible resistive random access memory and preparation method thereof

The invention provides a black phosphorene-containing graphene flexible resistive random access memory and a preparation method thereof. The preparation method of the resistive random access memory comprises the steps of cleaning a Al2O3 substrate; depositing a Ni/Au composite thin film by an electron beam evaporation technology to obtain a bottom electrode layer; transferring a black phosphorene-containing graphene composite thin film material on the bottom electrode layer by a transfer method to obtain a resistive changing functional layer; forming a top electrode pattern by a photoresist patterning process, depositing a Ag, Cu or Ni thin film by the electron beam evaporation technology to form a top electrode layer, and removing and stripping photoresist to form a memory unit; and forming a coating layer pattern by the photoresist patterning process, depositing the Al2O3 thin film again by an atomic layer deposition technology to form a coating layer, and removing and striping the photoresist to form the black phosphorene-containing graphene flexible resistive random access memory. The resistive random access memory prepared according to the method is simple in structure, fast in erasure speed and small in operation voltage, non-destructive readout is achieved, and the resistive random access memory can be used for fabricating a large-area flexible device.
Owner:DONGGUAN JIAQIAN NEW MATERIAL TECH CO LTD

Preparing method for cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode

ActiveCN109402656ADelayed self-recombinationHigh densityEnergy inputCoatingsPhoto assistedBismuth vanadate
The invention discloses a preparing method for a cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode. The preparing method includes the steps that a bismuth oxyiodide photoelectrode is made on the surface of conducting glass with the sedimentation method, a vanadium source solution and a molybdenum source solution are dropwise added onto the bismuth oxyiodide photoelectrode,annealing cleaning is carried out, and then molybdenum-doped bismuth vanadate photoelectrode is obtained; cobalt phosphide is subjected to electrodeposition on the surface of the molybdenum-doped bismuth vanadate photoelectrode through photo assisting in a three-electrode system, and the novel bismuth vanadate photoelectrode is obtained. The invention also discloses application of the composite molybdenum bismuth vanadate photoelectrode to photoelectrocatalysis decomposition of water. The photoelectrode prepared with the method is used for producing hydrogen through photoelectrocatalysis decomposition of water, and through molybdenum doping, the concentration of charge carriers can be effectively increased, and photocurrent is increased; through cobalt-phosphide electrodeposition, composite loss in the photoelectrode can be effectively delayed, the service life of photon-generated carriers is prolonged, an oxygen evolution reaction on the surface of the photoelectrode is promoted, andtherefore the solar energy photo-hydrogen conversion efficiency of the semiconductor photoelectrode is improved.
Owner:CHANGZHOU UNIV

Antimony-selenide thin-film solar battery using black phosphorene as conducting material and preparation method thereof

The invention discloses an antimony-selenide thin-film solar battery using black phosphorene as a conducting material and a preparation method thereof. The solar battery is characterized in that the battery comprises a metal positive electrode 1, an n type heavily-doped black phosphorene film 2, an n type molybdenum disulfide 3, an intrinsic hydrogenated nano crystalline silicon film 4, a p type antimony selenide film 5, a p type heavily-doped black phosphorene substate 6, and a metal negative electrode 7. According to the invention, the solar battery has the following advantages: the molybdenum disulfide being a direct band-gap semiconductor material is used to form a buffer layer, the antimony selenide having a high absorptivity is used as absorption layer, the intrinsic hydrogenated nano crystalline silicon is used for realizing passivation of a pn junction interface, so that the defect-mode density of the interface is reduced; and because the black phosphorene is used as the conducting material, the series resistance of the battery is reduced, the light current is increased substantially, and the photoelectric conversion efficiency of the antimony-selenide thin-film solar battery is improved.
Owner:HUNAN NORMAL UNIVERSITY
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