Black phosphorene-containing graphene flexible resistive random access memory and preparation method thereof

A technology of resistive memory and black phosphorene, which is applied in electrical components and other directions, can solve the problems of rare memory applications, and achieve the effects of simple structure, good flexibility, and stable operating voltage.

Inactive Publication Date: 2017-06-20
DONGGUAN JIAQIAN NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

With the understanding of black phosphorene materials, black phosphorene has gradually been applied in field e

Method used

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  • Black phosphorene-containing graphene flexible resistive random access memory and preparation method thereof
  • Black phosphorene-containing graphene flexible resistive random access memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Cleaning Al 2 O 3 Substrate: Al 2 O 3 The surface of the substrate is wiped clean with ethanol cotton balls, boiled in a mixture solution of sulfuric acid and phosphoric acid with a volume ratio of 3:1, rinsed with ethanol and deionized water, and dried with nitrogen.

[0031] (2) Using electron beam evaporation technology to deposit a Ni / Au composite film with a thickness of 80 nm on the substrate to obtain a bottom electrode layer.

[0032] (3) The black phosphorene quantum dots are added to the organic solvent dispersion containing graphene oxide, mixed in a water bath ultrasonically to form a dispersion, and electrophoretic deposition is used to obtain a black phosphorene-containing graphene oxide film under a nitrogen atmosphere The black phosphorene-containing graphene composite film material is obtained by high-temperature reduction, and the black phosphorene-containing graphene composite film material with a thickness of 7.5 nm is transferred on the bottom electro...

Embodiment 2

[0036] (1) Cleaning Al 2 O 3 Substrate: Al 2 O 3 The surface of the substrate is wiped clean with ethanol cotton balls, boiled in a mixture solution of sulfuric acid and phosphoric acid with a volume ratio of 3:1, rinsed with ethanol and deionized water, and dried with nitrogen.

[0037] (2) Using electron beam evaporation technology to deposit a Ni / Au composite film with a thickness of 5 nm on the substrate to obtain a bottom electrode layer.

[0038] (3) The black phosphorene quantum dots are added to the organic solvent dispersion containing graphene oxide, mixed in a water bath ultrasonically to form a dispersion, and electrophoretic deposition is used to obtain a black phosphorene-containing graphene oxide film under a nitrogen atmosphere The black phosphorene-containing graphene composite film material is obtained by high-temperature reduction, and the black phosphorene-containing graphene composite film material with a thickness of 0.5 nm is transferred on the bottom electrod...

Embodiment 3

[0042] (1) Cleaning Al 2 O 3 Substrate: Al 2 O 3 The surface of the substrate is wiped clean with ethanol cotton balls, boiled in a mixture solution of sulfuric acid and phosphoric acid with a volume ratio of 3:1, rinsed with ethanol and deionized water, and dried with nitrogen.

[0043] (2) Using electron beam evaporation technology to deposit a 20nm thick Ni / Au composite film on the substrate to obtain a bottom electrode layer.

[0044] (3) The black phosphorene nanosheets are added to the organic solvent dispersion containing graphene oxide, and the dispersion is formed by ultrasonic mixing in a water bath. The electrophoretic deposition method is adopted to obtain the black phosphorene-containing graphene oxide film under a nitrogen atmosphere. The black phosphorene-containing graphene composite film material is obtained by high-temperature reduction, and the black phosphorene-containing graphene composite film material with a thickness of 5 nm is transferred on the bottom elect...

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Abstract

The invention provides a black phosphorene-containing graphene flexible resistive random access memory and a preparation method thereof. The preparation method of the resistive random access memory comprises the steps of cleaning a Al2O3 substrate; depositing a Ni/Au composite thin film by an electron beam evaporation technology to obtain a bottom electrode layer; transferring a black phosphorene-containing graphene composite thin film material on the bottom electrode layer by a transfer method to obtain a resistive changing functional layer; forming a top electrode pattern by a photoresist patterning process, depositing a Ag, Cu or Ni thin film by the electron beam evaporation technology to form a top electrode layer, and removing and stripping photoresist to form a memory unit; and forming a coating layer pattern by the photoresist patterning process, depositing the Al2O3 thin film again by an atomic layer deposition technology to form a coating layer, and removing and striping the photoresist to form the black phosphorene-containing graphene flexible resistive random access memory. The resistive random access memory prepared according to the method is simple in structure, fast in erasure speed and small in operation voltage, non-destructive readout is achieved, and the resistive random access memory can be used for fabricating a large-area flexible device.

Description

Technical field [0001] The invention belongs to the technical field of memory materials, and specifically relates to a graphene flexible resistive random access memory containing black phosphorene and a preparation method thereof. Background technique [0002] Two-dimensional crystals are nano-thickness planar crystals stacked by a single atomic layer of a base layer. They have unique electrical, optical and magnetic properties, and have their own unique structural advantages. Common two-dimensional materials include graphene and silylene. , Molybdenum disulfide and black phosphorene, etc. [0003] Black scale is a kind of wavy layered crystal structure similar to graphite. The atomic layers are combined by van der Waals force and can be easily exfoliated into single-layer or few-layer nano-sheets. In the mono-atomic layer, each phosphorus atom is connected to the adjacent three. Phosphorus atoms form a pleated honeycomb structure with covalent bonds. Black phosphorene is a natur...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/881H10N70/8845H10N70/021
Inventor 王海燕
Owner DONGGUAN JIAQIAN NEW MATERIAL TECH CO LTD
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