Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Heterojunction semiconductor laser and manufacturing method thereof

A heterojunction and semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of large beam divergence angle, large temperature influence, poor directionality, monochromaticity and coherence, etc., and achieve easy lattice The effect of matching, reducing injection current, and improving conversion efficiency

Active Publication Date: 2016-10-12
SOUTHEAST UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the laser performance of early semiconductor lasers is greatly affected by temperature, and the divergence angle of the beam is also large, so it is poor in directivity, monochromaticity and coherence.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heterojunction semiconductor laser and manufacturing method thereof
  • Heterojunction semiconductor laser and manufacturing method thereof
  • Heterojunction semiconductor laser and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] a. Preparation of the substrate: using n-type silicon as the substrate;

[0033] n-Si substrate cleaning: take n-Si (111) sheet as the substrate, soak it with olefinic HF acid to remove the silicon dioxide on the Si surface, and then use propanol, ethanol, and deionized water to ultrasonically clean it to remove the silicon dioxide on the silicon sheet. Dry the organic matter with nitrogen, and put it into a quartz tube for deposition treatment; the vacuum degree of the quartz tube is about 10-2Pa, and it is heated to about 300°C for 10-15 minutes to remove the water vapor on the surface of the silicon wafer;

[0034] b. Preparation of few-layer black phosphorene: Bulk black phosphorus is obtained by treating its isomorph white phosphorus or red phosphorus under high temperature and high pressure:

[0035] 1) White phosphorus was heated to 200°C at 1200 atmospheres to obtain flaky black phosphorus; the multi-layer black phosphorene was peeled off from the black phosphor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a heterojunction semiconductor laser and a manufacturing method thereof. Two layers of Adelta-stacked phosphorene and three layers of Adeltadelta-stacked phosphorene are used to form an I-type semiconductor heterojunction through horizontal connection, and thus, population inversion in a laser diode can be realized and the working current can be effectively reduced. The semiconductor laser diode comprises a lower electrode (1), a substrate (2), a lower coating layer (3), an active layer (4), an upper coating layer (5) and an upper electrode (6) sequentially from bottom to top. The heterojunction of the same material is selected, crystal lattice matching is more easily achieved, the manufacturing process is simpler, the two layers of Adelta-stacked phosphorene and the three layers of Adeltadelta-stacked phosphorene can form the heterojunction through horizontal connection simply by a van der waals force. Through a mechanical stripping method, small-layer phosphorene with different stacked structures can be obtained.

Description

technical field [0001] The invention relates to a method for realizing a semiconductor laser with different stacking structures of few-layer black phosphorene, belonging to the technical field of semiconductor devices. Background technique [0002] Semiconductor laser is a general term for optical oscillators and optical amplifiers produced by stimulated emission of photons caused by electron optical transitions in semiconductor materials. Low-temperature pulse lasing was observed in the earliest semiconductor laser in 1962, and semiconductor lasers have developed rapidly since then. After years of hard work, due to the achievements of MBE and MOCVD technology, it has become possible for people to precisely control the growth of semiconductor thin film materials, which has made significant progress in the development of semiconductor lasers, especially laser diodes, which are widely used in optical fiber communications, optical discs, Laser printers, laser scanners, laser p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/32H01S5/323H01S5/343H01S5/16
CPCH01S5/16H01S5/3205H01S5/323H01S5/343
Inventor 雷双瑛沈海云黄兰
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com