The invention discloses a preparing method for a
cobalt-
phosphide-modified
molybdenum-doped
bismuth vanadate photoelectrode. The preparing method includes the steps that a
bismuth oxyiodide photoelectrode is made on the surface of conducting glass with the
sedimentation method, a
vanadium source solution and a
molybdenum source solution are dropwise added onto the
bismuth oxyiodide photoelectrode,annealing cleaning is carried out, and then
molybdenum-doped
bismuth vanadate photoelectrode is obtained;
cobalt phosphide is subjected to electrodeposition on the surface of the molybdenum-doped
bismuth vanadate photoelectrode through photo assisting in a three-
electrode system, and the novel
bismuth vanadate photoelectrode is obtained. The invention also discloses application of the composite molybdenum bismuth
vanadate photoelectrode to photoelectrocatalysis
decomposition of water. The photoelectrode prepared with the method is used for producing
hydrogen through photoelectrocatalysis
decomposition of water, and through molybdenum
doping, the concentration of charge carriers can be effectively increased, and
photocurrent is increased; through
cobalt-
phosphide electrodeposition, composite loss in the photoelectrode can be effectively delayed, the service life of
photon-generated carriers is prolonged, an
oxygen evolution reaction on the surface of the photoelectrode is promoted, andtherefore the
solar energy photo-
hydrogen conversion efficiency of the
semiconductor photoelectrode is improved.