7results about How to "Improve the selection ratio" patented technology

Provided is a ceria particle for chemical mechanical polishing, and a slurry composition for chemical mechanical polishing containing the same. The surface of the ceria particle contains Ce 3+ and Ce 4+ When the ceria particle of the embodiment of the present application is used, by increasing the proportion of Ce 3+ on the surface of ceria, a high oxide film removal rate and an oxide film polishing selectivity ratio can be exhibited in a low content range, despite a small particle size.

This invention provides a method for etching contact holes in gallium nitride (GaN) devices. The method includes providing a substrate on which a GaN epitaxial layer and a barrier layer are formed. An interlayer dielectric layer covering the barrier layer is formed on the substrate. A photoresist layer is formed on the interlayer dielectric layer. The photoresist layer is photolithographically opened to expose a portion of the interlayer dielectric layer, defining the contact hole formation area. Inductively coupled plasma etching (ICP-CPE) is used to etch the exposed interlayer dielectric layer to form a groove, such that the thickness of the interlayer dielectric layer at the bottom of the groove is a preset value. High-density plasma etching (HDP-CPE) is used to etch the interlayer dielectric layer at the bottom of the groove, exposing the barrier layer. The groove is then filled with a conductive material. This method yields ohmic contact holes with good morphology and features high selectivity, low damage, and low cost, which is beneficial for ohmic metal filling and improving ohmic contact performance.

The application provides an etching method for improving contact hole metal residue, and provides a substrate, an interlayer dielectric layer is formed on the substrate, a first metal layer is formed on the interlayer dielectric layer, a contact hole is formed on the metal layer and the interlayer dielectric layer below the metal layer, and a second metal layer covering the first metal layer is formed on the contact hole; the second metal layer is etched by using a first bias power and a first etching gas; the second metal layer remaining on the first metal layer is removed by using a second bias power and a second etching gas, the second bias power is lower than the first bias power; and part of the second metal layer in the contact hole is etched by using a third bias power and a third etching gas. The application etches the tungsten layer by using a progressive three-step method, the first etching ensures that a large amount of tungsten on the TIN surface is completely etched; the second etching stops on the TIN surface, and a high W / TIN selection ratio is ensured; and the third etching ensures that the residual tungsten is completely etched, and a higher W / TIN selection ratio can ensure a certain TiN thickness.

This invention provides a cerium oxide-based polishing slurry for STI structures. The slurry comprises, by total mass, 0.05 wt%–5 wt% nano-cerium dioxide abrasive, 0.02 wt%–0.2 wt% hydroquinone, 0.05 wt%–0.25 wt% pyridinecarboxylic acid, 0.01 wt%–0.5 wt% D-sorbitol, and 0.001 wt%–0.01 wt% 1,2-benzisothiazolin-3-one, with a pH of 3–5. The cerium oxide-based polishing slurry provided by this invention, by adding a reducing agent to gently fine-tune the CeO2 surface activity to increase the Ce3+ content, promotes the removal rate of TEOS. Through the synergistic effect of other inhibitors and passivators, a high TEOS:Si3N4 selectivity ratio is obtained. Inhibiting the removal rate of Si3N4 indirectly avoids excessive grinding of oxides in the trenches, resulting in better wafer surface planarization efficiency.

The invention relates to a high-selectivity metal etching solution and an etching method. In the invention, the high-selectivity etching solution for metal titanium nitride and tungsten is composed of sulfuric acid and high-selectivity hydrogen peroxide, and the high-selectivity hydrogen peroxide comprises hydrogen peroxide and an etching protective agent. In the process of etching tungsten and titanium nitride by the etching solution, a stable etching rate and a large selection ratio can be maintained. According to the method, the etching liquid is self-heated in a mode of controlling mixed heat release of sulfuric acid and hydrogen peroxide, so that the temperature of the etching liquid is increased to 100 DEG C or above in a short time, the heating energy consumption is reduced, the etching rate of the titanium nitride and tungsten film layer is increased, the etching selection ratio and the etching morphology are adjusted through the protective agent, the high etching selection ratio is kept, and the etching efficiency is improved. A big problem in the semiconductor manufacturing process is solved.

The invention provides an etching technology capable of improving the selection ratio. The etching method according to the present invention is performed in a plasma processing apparatus including a chamber, and includes: a step (a) of preparing a substrate including a first film containing silicon and nitrogen and a second film containing silicon and oxygen on a substrate support portion disposed in the chamber; (b) supplying a processing gas including a metal-containing gas into the chamber; and (c) selectively etching the second film with respect to the first film while performing step (b), the step (c) including: a step (c1) of generating plasma by setting an electrical power of a source RF signal having a first frequency to a first electrical power, and a step (c2) of generating plasma by setting an electrical power of the source RF signal having a second frequency to a second electrical power; a first bias signal having a frequency substantially not contributing to the generation of the plasma is supplied to the substrate supporting part at a second electric power; and a step (c2) of supplying the first bias signal to the substrate supporting portion at a third electric power higher than the second electric power after the step (c1).

The application provides a selective etching solution for aluminum oxide and IGZO, which comprises 3-5% of lye, 1-2% of halogen salt, 1-3% of indium gallium zinc salt compound, 0.1-1.0% of anthraquinone compound, 10-20% of alcohol organic solvent, and the rest is deionized water in percentage by mass. The etching solution can ensure that the selectivity ratio of aluminum oxide and IGZO is greater than 1000, and the wafer after etching has good roughness.