18results about How to "Improve the selection ratio" patented technology

The invention discloses a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises the following components in percentage by mass: 0.8%-10% of grinding particles, 0.001%-0.5% of an accelerating agent, 0.001%-0.5% of an acylamino Gemini quaternary ammonium salt cationic surfactant, 0.001%-1% of a cyclic oligosaccharide compound and the balance of water. The invention also discloses a preparation method and application of the chemical mechanical polishing solution. The chemical mechanical polishing solution can adjust the selection ratio of polycrystalline silicon to silicon dioxide, and avoids or reduces the generation of defects such as recesses, scratches and the like in the polishing process.

The invention provides a hafnium oxide etching solution. The etching solution comprises the following components in percentage by weight: 78-94% of dihydric alcohol, 5-20% of alcohol ether, 0.5-1.5% of hydrofluoric acid and 0.05-0.15% of an inhibitor. According to the hafnium oxide etching solution, the etching selection ratio of hafnium oxide (HfO2) to indium gallium zinc oxide (IGZO) is 1: 1, and good etching uniformity is achieved.

Provided is a ceria particle for chemical mechanical polishing, and a slurry composition for chemical mechanical polishing containing the same. The surface of the ceria particle contains Ce 3+ and Ce 4+ When the ceria particle of the embodiment of the present application is used, by increasing the proportion of Ce 3+ on the surface of ceria, a high oxide film removal rate and an oxide film polishing selectivity ratio can be exhibited in a low content range, despite a small particle size.

This invention provides a method for etching contact holes in gallium nitride (GaN) devices. The method includes providing a substrate on which a GaN epitaxial layer and a barrier layer are formed. An interlayer dielectric layer covering the barrier layer is formed on the substrate. A photoresist layer is formed on the interlayer dielectric layer. The photoresist layer is photolithographically opened to expose a portion of the interlayer dielectric layer, defining the contact hole formation area. Inductively coupled plasma etching (ICP-CPE) is used to etch the exposed interlayer dielectric layer to form a groove, such that the thickness of the interlayer dielectric layer at the bottom of the groove is a preset value. High-density plasma etching (HDP-CPE) is used to etch the interlayer dielectric layer at the bottom of the groove, exposing the barrier layer. The groove is then filled with a conductive material. This method yields ohmic contact holes with good morphology and features high selectivity, low damage, and low cost, which is beneficial for ohmic metal filling and improving ohmic contact performance.

The invention provides an HfO2 / IGZO etching solution with a high selection ratio. The HfO2 / IGZO etching solution with the high selection ratio is prepared from 1%-10% of hydrofluoric acid, 10%-50% of organic acid, 0.5%-5% of a chelating agent, 0.01%-0.5% of a cationic surface active agent and the balance water. Wherein the organic acid can effectively reduce the F <-> content in a system and inhibit the etching rate of IGZO, so that the selective etching of the etching solution to HfO2 is improved. The chelating agent and organic acid can serve as a synergistic acid system, and the dissolving capacity of Hf < 4 + > is further improved. The HfO2 / IGZO selection ratio of the high-selection-ratio etching solution disclosed by the invention is higher than or equal to 4.1, and the HfO2 etching rate can reach 11 / s.

The invention discloses a chemical mechanical polishing composition for an STI structure and application of the chemical mechanical polishing composition, cerium dioxide is used as an abrasive material in the chemical mechanical polishing composition, and meanwhile, a defoaming agent, a passivating agent, an antioxidant and a pH regulator are added. The chemical mechanical polishing composition provided by the invention not only can improve the polishing rate of an oxide layer, but also can adjust the selection ratio of TEOS / Si3N4, and effectively inhibits the generation of defects after polishing.

The application provides a low-germanium-component silicon germanium wafer alkaline polishing liquid and a preparation method thereof. The low-germanium-component silicon germanium material is Si 1‑X Ge X , wherein x<=0.5. The polishing liquid has a pH value of 9.0-12.0 and comprises, in percentage by mass, 0.5%-3.0% of colloidal silica abrasive, 0.1%-1.5% of corrosion accelerator A, 0.01%-0.2% of selectivity enhancer B, a pH regulator and the rest of deionized water. The corrosion accelerator A is a cyclic secondary amine compound, and the selectivity enhancer B is a polymer containing a sulfonic acid group. The low-germanium-component silicon germanium surface is mildly activated by the cyclic secondary amine, and the interface lubrication and TEOS selective protection are formed by the polymer containing the sulfonic acid group, so that the low-germanium-component silicon germanium wafer is chemically mechanically polished at a high removal rate, a high selectivity ratio and a low defect.

The invention provides a selective nickel etching solution which comprises the following components in percentage by mass: 10-30% of nitric acid, 10-20% of acetic acid, 0.01-0.1% of organic acid, 0.1-1% of an etching inhibitor, 0.01-0.5% of a surfactant and the balance of water. In the nickel etching process, the stable etching rate can be kept, and the selection ratio of aluminum and copper is high. According to the etching solution, aluminum can be passivated by adjusting the content of nitric acid, and then part of organic matters with organic groups can be adsorbed on the surfaces of aluminum and copper to prevent the aluminum and copper from being further etched; and the surfactant can adjust the interfacial tension between the etching solution and the nickel surface, improve the wettability of the solution and avoid the pitting effect. The etching solution disclosed by the invention can etch metal nickel at a relatively high rate, and has a relatively high selection ratio for aluminum and copper.

The application provides an etching method for improving contact hole metal residue, and provides a substrate, an interlayer dielectric layer is formed on the substrate, a first metal layer is formed on the interlayer dielectric layer, a contact hole is formed on the metal layer and the interlayer dielectric layer below the metal layer, and a second metal layer covering the first metal layer is formed on the contact hole; the second metal layer is etched by using a first bias power and a first etching gas; the second metal layer remaining on the first metal layer is removed by using a second bias power and a second etching gas, the second bias power is lower than the first bias power; and part of the second metal layer in the contact hole is etched by using a third bias power and a third etching gas. The application etches the tungsten layer by using a progressive three-step method, the first etching ensures that a large amount of tungsten on the TIN surface is completely etched; the second etching stops on the TIN surface, and a high W / TIN selection ratio is ensured; and the third etching ensures that the residual tungsten is completely etched, and a higher W / TIN selection ratio can ensure a certain TiN thickness.

This invention provides a cerium oxide-based polishing slurry for STI structures. The slurry comprises, by total mass, 0.05 wt%–5 wt% nano-cerium dioxide abrasive, 0.02 wt%–0.2 wt% hydroquinone, 0.05 wt%–0.25 wt% pyridinecarboxylic acid, 0.01 wt%–0.5 wt% D-sorbitol, and 0.001 wt%–0.01 wt% 1,2-benzisothiazolin-3-one, with a pH of 3–5. The cerium oxide-based polishing slurry provided by this invention, by adding a reducing agent to gently fine-tune the CeO2 surface activity to increase the Ce3+ content, promotes the removal rate of TEOS. Through the synergistic effect of other inhibitors and passivators, a high TEOS:Si3N4 selectivity ratio is obtained. Inhibiting the removal rate of Si3N4 indirectly avoids excessive grinding of oxides in the trenches, resulting in better wafer surface planarization efficiency.

The invention relates to a high-selectivity metal etching solution and an etching method. In the invention, the high-selectivity etching solution for metal titanium nitride and tungsten is composed of sulfuric acid and high-selectivity hydrogen peroxide, and the high-selectivity hydrogen peroxide comprises hydrogen peroxide and an etching protective agent. In the process of etching tungsten and titanium nitride by the etching solution, a stable etching rate and a large selection ratio can be maintained. According to the method, the etching liquid is self-heated in a mode of controlling mixed heat release of sulfuric acid and hydrogen peroxide, so that the temperature of the etching liquid is increased to 100 DEG C or above in a short time, the heating energy consumption is reduced, the etching rate of the titanium nitride and tungsten film layer is increased, the etching selection ratio and the etching morphology are adjusted through the protective agent, the high etching selection ratio is kept, and the etching efficiency is improved. A big problem in the semiconductor manufacturing process is solved.

The invention provides an etching technology capable of improving the selection ratio. The etching method according to the present invention is performed in a plasma processing apparatus including a chamber, and includes: a step (a) of preparing a substrate including a first film containing silicon and nitrogen and a second film containing silicon and oxygen on a substrate support portion disposed in the chamber; (b) supplying a processing gas including a metal-containing gas into the chamber; and (c) selectively etching the second film with respect to the first film while performing step (b), the step (c) including: a step (c1) of generating plasma by setting an electrical power of a source RF signal having a first frequency to a first electrical power, and a step (c2) of generating plasma by setting an electrical power of the source RF signal having a second frequency to a second electrical power; a first bias signal having a frequency substantially not contributing to the generation of the plasma is supplied to the substrate supporting part at a second electric power; and a step (c2) of supplying the first bias signal to the substrate supporting portion at a third electric power higher than the second electric power after the step (c1).

The invention discloses a BOE etching solution with a high silicon oxide / silicon nitride selection ratio, and the BOE etching solution comprises the following components in percentage by mass: 2%-20% of hydrofluoric acid, 17%-20% of ammonium fluoride, 0.01%-0.5% of an additive, 0.003%-0.3% of a defoaming agent and the balance of ultrapure water. The additive is aromatic aldehyde, so that the selection ratio of silicon oxide to silicon nitride can be effectively improved; the defoaming agent is used for improving foam and uniformly dispersing aromatic aldehyde in the BOE etching solution, so that the uniformity of the solution is ensured. The BOE etching solution in the invention can ensure that the silicon nitride layer is less etched, and plays a role in improving the selection ratio of silicon oxide / silicon nitride.

The present invention relates to a method for dry etching lithium niobate, and belongs to the field of semiconductor processing. The etching step of the method for dry etching lithium niobate includes: placing patterned lithium niobate into an etcher; introducing a mixed etching gas Cl2, H2 and an inert gas into the etching chamber of the etcher, igniting the etcher by radio frequency, and starting etching; after the etching time is reached, the etching is completed. The present invention adopts a method for dry etching of lithium niobate, and its gas uses Cl2 / H2 to etch lithium niobate, which is different from the traditional fluorine-based etching lithium niobate system. The present invention can use dielectric materials or photoresists as masks. After being applied to the production line, it can optimize the production process, greatly improve production capacity, and save costs. Dry etching of lithium niobate can use traditional photoresist masks or dielectric materials such as SiO, SiN, Si as hard masks, and obtain better selectivity and good morphology.

The invention provides a transistor and a preparation method thereof. The transistor comprises a channel layer, a barrier layer, an etching barrier layer and a p-GaN layer, the barrier layer, the etching barrier layer and the p-GaN layer are sequentially stacked on the channel layer, and selective etching is performed through a mask, so that the p-GaN layer is provided with a step structure extending to the etching barrier layer. An etching barrier layer is added between a barrier layer and a p-GaN layer of an epitaxial structure, the etching speed of the etching barrier layer is low in the etching process, and the selection ratio of the p-GaN layer to the etching barrier layer is increased; meanwhile, the barrier layer can prevent the barrier layer from being etched, and the stability of the transistor is improved.

The present invention relates to a modified aminosilane copolymer, a silicon nitride etching solution, a preparation method and an application. The copolymer has three alkoxy groups connected to Si atoms and easily hydrolyzed, and the groups can be hydrolyzed under acidic conditions to generate Si-OH bonds, and the Si-OH bonds can be tightly combined with a silicon dioxide layer through van der Waals forces to adhere to and wrap the silicon dioxide layer. The silicon nitride etching solution components include a modified aminosilane copolymer, concentrated phosphoric acid and ultrapure water. The silicon nitride etching solution of the present invention can maintain a high etching selectivity ratio for both silicon dioxide and polysilicon, and can be applied in the field of silicon nitride etching of 3D flash memory chips.

The application provides a selective etching solution for aluminum oxide and IGZO, which comprises 3-5% of lye, 1-2% of halogen salt, 1-3% of indium gallium zinc salt compound, 0.1-1.0% of anthraquinone compound, 10-20% of alcohol organic solvent, and the rest is deionized water in percentage by mass. The etching solution can ensure that the selectivity ratio of aluminum oxide and IGZO is greater than 1000, and the wafer after etching has good roughness.

The invention discloses a titanium nitride / tungsten etching solution with long service life and high selection ratio. The titanium nitride / tungsten etching solution comprises the following raw materials in percentage by mass: 30-70% of an acidic medium; 10-25% of a diffusant; 1-10% of a complexing agent; 0.1-1% of an accelerant; 0.01%-0.1% of a stabilizing agent; and the balance of deionized water. When the etching solution ensures that the etching rate of titanium nitride is 10-25 A / min, the selection ratio of titanium nitride / tungsten is increased to 500-1000, and the etching life reaches 24 hours.