Process for producing magnetic element

A magnetic device and magnetic film technology, which is applied in the field of manufacturing magnetic devices, can solve problems such as poor reactivity of magnetic materials, and achieve the effects of improved yield and high etching rate

Inactive Publication Date: 2010-02-03
CANON ANELVA CORP
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, even with the RIE technique widely used in the semiconductor industry, the reactivity to magnetic materials such as FeNi, CoFe, and CoPt is poor, and it is difficult to process them without generating etch residues and sidewall deposits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for producing magnetic element
  • Process for producing magnetic element
  • Process for producing magnetic element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]FIG. 1 is a schematic diagram of an etching apparatus with an ICP (Inductively Coupled Plasma) plasma source. In Example 1, acetic acid was used as a vaporizing compound, a mixed gas of acetic acid and oxygen was used as an etching gas, and by using the apparatus shown in FIG. 1, as Figure 2A and Figure 2B Etched TMR elements are shown. Figure 2C and image 3 Two examples of TMRs manufactured using the manufacturing method according to the present invention are shown. Figure 2A The laminated structure before the etching process used in the present invention is shown. it is Figure 1A A wafer 9 shown in , in which a magnetic material layer and the like are laminated on a substrate composed of quartz or the like, is an object of etching.

[0037] exist Figure 2A Among them, 201 refers to a Ta film, 202 refers to an Al film, 203 refers to a Ta film, and 204 refers to a laminated ferromagnetic film, which is composed of a soft magnetic CoFe film with a thickness of...

Embodiment 2 to 20 and comparative example 1

[0058] In the same manner as in Example 1, except that the etching gas shown in Table 2 was used instead of the etching gas composed of acetic acid gas and oxygen gas used in the above-mentioned Example 1, the etching gas shown in Table 2 was formed. Figure 2C In the element, the etch rate and selectivity were measured. The results are shown in Table 1 below. The etching rates shown in Table 1 are shown as ratios when the etching rate in Example 1 is "1" and the selectivity is "1".

[0059] Table 1

[0060] Example

[0061] As described above, the dry etching method used in the manufacturing method according to the present invention exhibits unexpectedly remarkable effects.

Embodiment 21 to 25 and comparative example 2

[0063] In the same manner as in Examples 1, 9, 3, 6, and 13 except for changing the flow rate of the etching gas in the above-mentioned examples, the Figure 2C Components in , and measure the etch rate and selectivity ratio. The results are shown in Table 2. The etching rates shown in Table 2 are shown as ratios when the etching rate in Example 1 is "1" and the selectivity is "1".

[0064] Table 2

[0065] Example

[0066] Among ethers, aldehydes, carboxylic acids, diketones, and amines, ethers and aldehydes are not corrosive, and the safety is particularly favorable.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A magnetic device is fabricated by etching a magnetic film in an atmosphere of plasma using a non-organic film as a mask. An atmosphere of plasma is generated by using at least one kind of gasifying compound selected from a gasifying compound group consisting of ethers, aldehydes, carboxylic acids, esters and diones; and by using a non-organic material mask, etching a magnetic film or diamagneticfilm which includes at least one kind of metal selected from a metal group consisting of VIII group, IX group and X group elements in a periodic table. As a gas in the atmosphere of plasma, at least one kind of gas selected from a gas group consisting of oxygen, ozone, nitrogen, H2O, N2O, NO2 and CO2 can be added to the gasifying compound. The etching rate and the etching ratio were favorable.

Description

technical field [0001] The present invention relates to a method of fabricating a magnetic device with a dry etching process. More specifically, the present invention relates to a method of manufacturing a magnetic device having a process of performing dry etching at a high etching rate and a high selectivity when performing microfabrication of a magnetic thin film. Background technique [0002] MRAM (Magnetic Random Access Memory), which is an integrated magnetic memory, has attracted attention as a memory having an integration density similar to DRAM and a high speed similar to SRAM, and capable of unlimited rewriting. In addition, thin film magnetic heads, magnetic sensors, etc. constituting magnetoresistive devices such as GMR (Giant Magneto Resistance) and TMR (Tunneling Magneto Resistance) have been rapidly developed. [0003] Heretofore, in the etching process of magnetic materials, ion milling has been frequently used. However, since ion thinning is physical sputte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12C23F4/00H01L27/105H01L43/08
CPCB82Y10/00H01L43/12G11B5/3906G11B5/3163H01F10/3254G11B5/3909H01L43/08C23F4/00B82Y25/00B82Y40/00H01F41/308G11C11/161H10N50/10H10N50/01G11C11/15
Inventor 小平吉三长田智明
Owner CANON ANELVA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap