Chemical and mechanical polishing size and chemical and mechanical polishing method using said size

A slurry, water-based slurry technology, applied in chemical instruments and methods, other chemical processes, polishing compositions containing abrasives, etc., can solve problems such as reduced margin, uneven wafer surface, and deterioration of semiconductor device characteristics.

Inactive Publication Date: 2003-09-10
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, with conventional slurries, the thickness of the remaining polish stop layer after CMP varies, which leads to non-uniform wafer surfaces and reduces margins for subsequent device processing
As a result, the characteristics of the semiconductor device may be degraded

Method used

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  • Chemical and mechanical polishing size and chemical and mechanical polishing method using said size
  • Chemical and mechanical polishing size and chemical and mechanical polishing method using said size
  • Chemical and mechanical polishing size and chemical and mechanical polishing method using said size

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0065] In this experiment, using image 3 According to the method, various slurries were prepared, these slurries contained 1% by weight of cerium oxide as the metal oxide abrasive particles, and polyammonium carboxylate (APC) as the anionic polymer deactivator, while varying the content of APC.

[0066] A cladding substrate (blanket substrate) of PE-TEOS with a thickness of 10000 Å and a silicon nitride layer (Si 3 N 4 ) coated substrate as a sample.

[0067] Referring to Table 1, the samples were subjected to the CMP process using slurries with different APC contents, and the removal rate and the selectivity ratio of oxides and nitrides were measured. At this time, using a Mirra apparatus (manufactured by AMAT) having an IC1000 upper pad and a Suba4 lower pad, CMP was performed under conditions of a down force of 4 psi and a table speed of 77 rpm.

[0068]

APC content (weight%)

Removal rate ( / min)

selection ratio

Oxide layer (PE-...

experiment example 2

[0071] In this experiment, using image 3 method, the slurry was prepared by varying the APC concentration (0 wt% and 0.8 wt%) while varying the amount of ceria metal oxide abrasive particles (1 wt% and 5 wt%). Preparation of oxide layer (PE-TEOS) clad substrate and silicon nitride layer (Si 3 N 4 ) clad substrate (the same substrate as used in Experimental Example 1) was used as a sample. The prepared slurry was used to perform CMP on the sample, and the results are shown in Table 2.

[0072]

[0073] As shown in Table 2, as the content of abrasive particles increases, the removal rate of oxide layer and silicon nitride layer increases. For the case where no APC is added, the selectivity ratio is low, below 5:1. When 0.8% by weight of APC was added to the slurry, the removal rate of the silicon nitride layer dropped abruptly, whereby the selectivity increased to over 50:1. On the contrary, when the content of abrasive particles increases, the removal rate of oxi...

experiment example 3

[0074] In this experiment, using image 3 method, various slurries containing 1% by weight of cerium oxide and 1% by weight of APC were prepared while adjusting the pH of the slurry by adding alkaline additives such as KOH, TMAH and choline. The prepared samples were the same as those in Experimental Example 1.

[0075] After performing CMP using the prepared slurry and samples, the selectivity ratio of oxides to nitrides was measured. At this time, using an apparatus (manufactured by Presi) having an IC1000 upper pad and a Suba4 lower pad, the CMP process was performed under the conditions of a down force of 5 psi and a stage speed of 65 rpm. The results are shown in Table 3.

[0076] Alkaline Additive

pH of slurry

selection ratio

none

7.2

1

KOH

7.5

1.08

TMAH

7.5

1.17

Choline

7.5

1.18

[0077] (Remarks: The selection ratio in Table 3 is the standard value wh...

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PUM

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Abstract

Slurries for chemical mechanical polishing (CMP) are provided including a high planarity slurry and high selectivity ratio slurry. A high planarity slurry includes at least one kind of metal oxide abrasive particle and an anionic polymer passivation agent having a first concentration. A high selectivity ratio slurry includes at least one kind of the metal oxide abrasive particle, the passivation agent in a second concentration that is less than the first concentration of the passivation agent for the high planarity slurry, one of a quaternary amine and the salt thereof, and a pH control agent. The high selectivity ratio slurry has a pH in a range of about over an isoelectric point of a polishing target layer and less than an isoelectric point of a polishing stopper. In addition, a CMP method using the CMP slurries having high planarity and high selectivity ratio is provided.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2002-10928 filed on February 28, 2002, which is hereby incorporated by reference in its entirety. technical field [0003] Generally, the present invention relates to CMP (Chemical / Mechanical Polishing) slurries used in the fabrication of microelectronic devices. More specifically, the present invention relates to highly selective CMP slurries that can rapidly remove target layers and effectively passivate polish stoppers. Background technique [0004] With the development of multilayer interconnection, semiconductor devices are becoming more and more integrated and miniaturized, so the number of processing steps is increased in order to form multiple layers of conductive or insulating layers on a wafer. To eliminate steps in the manufacture of semiconductors, CMP, which is a combination of chemical and mechanical processing, is often used. CMP was d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09G1/02C09K3/14C09K13/06H01L21/304H01L21/3105
CPCC09G1/02H01L21/31053H01L21/304
Inventor 李在东尹普彦韩镛弼
Owner SAMSUNG ELECTRONICS CO LTD
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