1682results about "Surface treatment compositions" patented technology

The invention relates to a texturing additive composition for a silicon wafer and a texturing solution. The texturing additive composition comprises the following components: 0.01-7.5 wt% of a nucleating agent; 0.05 to 5.5 wt% of an etching control agent; 0.0001 to 3.5 wt% of a dispersant; 0.0 to 2.0 wt% of a surfactant; 0.0 to 5.0 wt% of a pH conditioning agent; and water. The texturing additive composition and the texturing liquid can be matched with the special thin film deposition requirement of the heterojunction solar cell, and the synergistic effect of the components in the texturing additive composition can optimize the texturing structure combination on the basis of ensuring the texturing full rate, so that the texturing pyramid distribution is uniform, and the texturing quality is improved. And the apparent reflectivity of the surface of the silicon wafer is lower. The suede structure combination is beneficial to deposition of an amorphous silicon film in the next process of the heterojunction solar cell, and meanwhile, the suede structure combination has excellent light trapping performance.

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

The invention belongs to the technical field of laser processing, and provides a quartz crystal etching solution which comprises the following components in volume concentration: 10-30% of hydrofluoric acid, 1-5% of sulfuric acid, 0.1-0.3% of surfactant and the balance of water. By optimizing the proportion, the manufacturing precision and the production and manufacturing efficiency of the tuning fork wafer are improved. And the stable etching rate and the optimal etching surface are obtained, and meanwhile, the cost is saved for process replacement. The invention further provides a method for cutting the tuning fork of the quartz crystal through the laser. The method comprises the steps that S1, the cutting contour line of the tuning fork is preset on the quartz crystal; s2, performing laser cutting on the quartz crystal based on a preset cutting contour line, and forming a tuning fork contour on the quartz crystal; and S3, integrally soaking the quartz crystal in the quartz crystal etching solution, and separating out the tuning fork. The machining process of the quartz crystal tuning fork is simplified, the cutting quality is optimized, the method is suitable for the large-piece manufacturing process, and the cutting efficiency and the yield are greatly improved.

The invention provides a gas for plasma etching, a gas combination, an etching method and semiconductor equipment, which belong to the field of plasma etching, and are mainly characterized in that one or more of carbonyl halide, aldehyde halide and carboxyl halide are provided as process gases in the etching process to excite and form plasma, and the plasma is used as a plasma source. According to the method, the to-be-etched layer is etched, so that the problem of upper and lower inconsistency caused by large difference between the bottom etching rate and the middle etching rate when a high-aspect-ratio hole or groove is formed by etching to a certain degree is solved, the morphology of high-aspect-ratio etching is remarkably improved, the collimation is ensured, and the effectiveness of the semiconductor structure is improved.

Disclosed herein is a composition for selectively etching a first silicon germanium layer having a first germanium content in the presence of a silicon layer or a second silicon germanium layer having a second germanium content, where the first germanium content is higher than the second germanium content, the composition including:(a) from 0.1 to 10% by weight of an oxidizing agent;(b) from 1 to 20% by weight of an etchant including a source of fluoride ions;(c) from 0.001 to 3% by weight of a selectivity enhancer of formula Si(d) from 0.001 to 3% by weight of an additional selectivity enhancer of formula S41or derivatives thereof obtained by homocondensation of the compounds of formula S41 or by co-condensation of the compounds of formula S41 with silanes of formula S42 in a weight ratio of 0.1 or moreand(e) water.

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.

In order to solve the problem that an existing BOE etching solution cannot consider the etching rate, the etching uniformity and the service life of the etching solution at the same time, the invention provides a BOE etching solution which comprises the following components: hydrogen fluoride, ammonium fluoride and a corrosion inhibitor, the corrosion inhibitor comprises a compound shown as a structural formula 1: # imgabs0 # structural formula 1, R1 is selected from substituted or unsubstituted C2-C6 alkyl, and R2 is selected from substituted or unsubstituted C2-C6 ether-containing alkyl. The BOE etching solution provided by the invention has a relatively high silicon oxide / silicon nitride and Si etching selection ratio, can effectively improve the etching uniformity, is beneficial to reducing surface defects, and ensures the flatness and smoothness of an etched surface. In addition, the BOE etching liquid is stable in chemical composition and long in service life.

Provided is a composition or the like capable of selectively removing silicon while suppressing damage to silicon oxide. A composition including: a quaternary ammonium compound; and at least one cationic surfactant selected from the group consisting of an aryl group-containing cationic surfactant and a heteroaryl group-containing cationic surfactant.

The invention relates to the technical field of semiconductors and electronic chemicals, and particularly discloses an etching solution for selectively etching silicon nitride and titanium nitride and a preparation method of the etching solution, the etching solution comprises the following components in percentage by mass: 10-45% of phosphoric acid, 1-5% of hydrofluoric acid, 0.5-2.5% of a pH buffer agent, 0.01-1.8% of a solubilizer, 0.1-7% of an etching inhibitor and the balance of water. Wherein the pH buffering agent can effectively stabilize the pH of the etching solution, and the solubilizer can improve the solubility of a solvent in the etching solution, reduce the tension of a solid-liquid phase interface in the solution and promote the transfer rate of interphase substances; the etching inhibitor and metal can form a layer of film on the surface of titanium nitride in a coordination bond mode, and it is guaranteed that silicon nitride and titanium nitride have the high selection ratio. The etching solution provided by the invention can inhibit the etching rate of titanium nitride under the condition of higher etching rate of silicon nitride, and can ensure that the requirement of high selection ratio of silicon nitride and titanium nitride is met.

Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1).(wherein a is an integer from 6 to 20, R1, R2, and R3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X− is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.

The present disclosure relates to methods for etching a molybdenum (Mo) film and systems for performing said method. The disclosed methods comprise, exposing a substrate comprising an Mo outer layer to an oxygen containing reactant to convert at least a portion of the Mo outer layer to molybdenum oxide (MoOx), then exposing the substrate to an etchant that comprises one or more S—X bond(s), P—X bond(s), and Si—X bond(s), where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo containing compound that is removed from the surface of the substrate, thereby reducing the thickness of the Mo outer layer.

Disclosed herein are fluoroolefin compositions, methods of producing the same, methods and systems using the same, and systems containing the HFO-1234ze compositions. The inventive compositions are useful as refrigerants in air conditioning and refrigeration systems, and also as blowing agents.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

The present disclosure is directed to etching methods that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber, a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber; a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber; and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

The present: invention addresses the problem of providing a silicon nitride etching liquid composition which is capable of selectively etching Si3N4 with a practical etching selectivity with respect to SiO2, while suppressing regrowth of SiO2, and which is also capable of suppressing pattern collapse of an SiO2 film in the production of a 3D nonvolatile memory cell. A silicon nitride etching liquid composition for producing a 3D nonvolatile memory cell, which contains phosphoric acid, one or more silane coupling agents and water, but which does not contain ammonium ions.

The invention relates to a semiconductor etching BOE waste liquid resource reutilization method, and relates to the technical field of waste liquid treatment and resource recovery, and the semiconductor etching BOE waste liquid resource reutilization method comprises the following steps: S1, waste liquid pretreatment; step S2, silicon removal treatment; s3, removing an additive; step S4, activated carbon adsorption; and S5, component adjustment and refining. The resource recycling method of the BOE waste liquid for semiconductor etching has more excellent additive and metal ion removal rate, and is higher in BOE etching rate and better in surface flatness when being used for a panel.

Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.

Provided is a polishing composition that can offer a high-grade surface. The polishing composition contains silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble polymer (C2), and water (D), wherein the first water-soluble polymer (C1) is a polyvinyl alcohol-based polymer. A product (ER × ζ) of an etching rate ER [µm / h] of the polishing composition and zeta potential ζ [mV] of the polishing composition is -900 nmV / h or more and -90 nmV / h or less.

An aqueous based chemical mechanical polishing composition for polishing a semiconductor substrate includes an abrasive having bimodal distributed colloidal silica particles which include elongated colloidal silica particles, polyvinyl alcohol 80% hydrolyzed to less than or equal to 90% hydrolyzed, an electrolyte and a pH greater than 7, and a method of polishing the semiconductor substrate to planarize the substrate. The aqueous based chemical mechanical polishing composition and method inhibits polishing pad groove clogging during chemical mechanical polishing of the semiconductor substrates.

The invention discloses an alkali corrosion liquid for silicon in the semiconductor industry and a corrosion method of the alkali corrosion liquid. According to the alkali corrosion liquid, a corrosion method of slow acid corrosion and sufficient alkali corrosion is adopted, the surface roughness of the silicon wafer can be effectively reduced, in addition, in the alkali corrosion liquid, a surfactant, an active additive, sodium dodecyl polyoxyethylene ether sulfate and the like are matched with alkali, so that the surface tension of the alkali is further reduced, the corrosion rate is higher, and the service life of the silicon wafer is prolonged. The surface tension can be effectively reduced, the affinity of the etching liquid and a silicon substrate is improved, the selective etching capability to silicon dioxide in the etching process can be enhanced, corrosion to the silicon substrate is reduced, and a more uniform and accurate etching effect is achieved. Through measurement, the surface roughness Ra of the silicon wafer obtained by the corrosion method is less than or equal to 0.1 mu m, and the single metal cation is lt; and the corrosion rate can reach 1-1.5 microns / minute and is stabilized within + / -5%.

The invention relates to a monocrystalline silicon texturing additive for improving heavy line marks of an original silicon wafer as well as a preparation method and application of the monocrystalline silicon texturing additive. The texturing additive comprises the following components in parts by weight: 1-3 parts of a nucleating agent; 0.1 to 1 part of a copolymer; 0.5 to 2 parts of a surfactant; 1-5 parts of a dispersing aid; 1-5 parts of an inorganic base; and 60-80 parts of deionized water. The nucleating agent with a complex structure and various biological activities is adopted, the special main chain and side chain structures of the nucleating agent endow the nucleating agent with unique biological activity and physicochemical characteristics, and components such as the copolymer are compounded for texturing, so that the defect area of the original silicon wafer with heavy line marks is repaired and etched, and meanwhile, the defect area of the original silicon wafer with heavy line marks is repaired. And when a small amount of texturing additive is used, the influence of multiple factors such as the repairing effect and the like is more emphasized.

There is provided a method for storing fluoroalkene in which, even when stabilizers for suppressing reactions of fluoroalkene are not added, the reactions of the fluoroalkene hardly occur and the purity of the fluoroalkene hardly decreases during storage. Fluoroalkene having a bromine atom or an iodine atom in the molecule is at least one type of fluoroethylene represented by a first general formula C2HpFqXr and fluoropropene represented by a second general formula C3HsFtXu (X represents a bromine atom or an iodine atom), and contains or does not contain at least one type among manganese, cobalt, nickel, and silicon as metal impurities. When any of the foregoing is contained, the fluoroalkene is stored in a container with the total concentration of the manganese, the cobalt, the nickel, and the silicon set to 1000 ppb by mass or less.

A method of making a glass article using a phase separated silicate glass including a silica rich first phase and a boron rich second phase. The phase separated silica glass is etched with an etchant to remove at least a portion of the second phase and obtain a high silica content porous glass article. Vias may be formed in the porous glass article by first forming holes in the porous glass article and filling the holes with an electrically conductive material. The porous glass article may be heat treated to consolidate the porous glass article to close the pores of the porous glass article and obtain a consolidated glass article with very low dielectric properties. Various glass compositions are disclosed that phase separate via spinodal decomposition.

The invention belongs to the technical field of semiconductor processing and manufacturing, and provides a high-selectivity low-lateral-corrosion PZT piezoelectric film wet etching solution, which is prepared by the following steps: mixing a fluoboric acid solution, a hydrochloric acid solution, a nitric acid solution and water until the temperature is stable, thereby obtaining the PZT piezoelectric film wet etching solution. The etching solution obtained by the invention can realize complete residual-free PZT etching on the whole surface; the obtained etching liquid is low in lateral corrosion, high-precision etching can be achieved through different etching operations such as soaking-rinsing circulation and rotary spraying, the angle of the side wall after etching is a regular trapezoid close to 45 degrees, and the follow-up semiconductor processing technology can be conveniently carried out; the etching liquid has good selectivity for a bottom electrode Pt and photoresist of PZT, and can be practically applied to processing and manufacturing of semiconductor devices.

The invention relates to the technical field of glass processing, and discloses a glass surface AG (anti-glare) etching method based on a Thiessen polygon structure, which comprises the following steps: S1, pretreating a glass substrate: cleaning and polishing the surface of the glass substrate; s2, pattern transfer: coating acid-resistant photoresist on the surface of the glass, and forming a Thiessen polygonal mask pattern through ultraviolet exposure and development; s3, chemical etching: selectively etching the mask pattern area by using an etching solution containing fluoride; and S4, deplating and hydrophobic treatment: removing the residual photoresist, and carrying out hydrophobic modification treatment on the etched surface to form a hydrophobic treatment layer. Through the Thiessen polygon mask and the dynamic etching technology, the etching uniformity is improved, the surface touch feeling is optimized, and the function performance and the production efficiency of the anti-dazzle glass are greatly improved in combination with precise liquid control and an automatic recovery system.

A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below, and a pH is 5.0 or more. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A2) a picolinic acid compound, and a pH is 5.0 or more.[In the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]

The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer.The first molybdenum static etching rate suppressor is a phosphate-containing polyethylene surfactant or a sulfate-containing polyethylene surfactant, and the second molybdenum static etching rate suppressor is a basic amino acid, and this combination provides advantageous properties such as high molybdenum removal rate while also exhibiting a low molybdenum static etching rate, thus providing compositions well suited for polishing a molybdenum surface.