1216results about "Surface treatment compositions" patented technology

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

The invention belongs to the technical field of laser processing, and provides a quartz crystal etching solution which comprises the following components in volume concentration: 10-30% of hydrofluoric acid, 1-5% of sulfuric acid, 0.1-0.3% of surfactant and the balance of water. By optimizing the proportion, the manufacturing precision and the production and manufacturing efficiency of the tuning fork wafer are improved. And the stable etching rate and the optimal etching surface are obtained, and meanwhile, the cost is saved for process replacement. The invention further provides a method for cutting the tuning fork of the quartz crystal through the laser. The method comprises the steps that S1, the cutting contour line of the tuning fork is preset on the quartz crystal; s2, performing laser cutting on the quartz crystal based on a preset cutting contour line, and forming a tuning fork contour on the quartz crystal; and S3, integrally soaking the quartz crystal in the quartz crystal etching solution, and separating out the tuning fork. The machining process of the quartz crystal tuning fork is simplified, the cutting quality is optimized, the method is suitable for the large-piece manufacturing process, and the cutting efficiency and the yield are greatly improved.

Disclosed herein is a composition for selectively etching a first silicon germanium layer having a first germanium content in the presence of a silicon layer or a second silicon germanium layer having a second germanium content, where the first germanium content is higher than the second germanium content, the composition including:(a) from 0.1 to 10% by weight of an oxidizing agent;(b) from 1 to 20% by weight of an etchant including a source of fluoride ions;(c) from 0.001 to 3% by weight of a selectivity enhancer of formula Si(d) from 0.001 to 3% by weight of an additional selectivity enhancer of formula S41or derivatives thereof obtained by homocondensation of the compounds of formula S41 or by co-condensation of the compounds of formula S41 with silanes of formula S42 in a weight ratio of 0.1 or moreand(e) water.

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.

Provided is a composition or the like capable of selectively removing silicon while suppressing damage to silicon oxide. A composition including: a quaternary ammonium compound; and at least one cationic surfactant selected from the group consisting of an aryl group-containing cationic surfactant and a heteroaryl group-containing cationic surfactant.

The present disclosure relates to methods for etching a molybdenum (Mo) film and systems for performing said method. The disclosed methods comprise, exposing a substrate comprising an Mo outer layer to an oxygen containing reactant to convert at least a portion of the Mo outer layer to molybdenum oxide (MoOx), then exposing the substrate to an etchant that comprises one or more S—X bond(s), P—X bond(s), and Si—X bond(s), where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo containing compound that is removed from the surface of the substrate, thereby reducing the thickness of the Mo outer layer.

Disclosed herein are fluoroolefin compositions, methods of producing the same, methods and systems using the same, and systems containing the HFO-1234ze compositions. The inventive compositions are useful as refrigerants in air conditioning and refrigeration systems, and also as blowing agents.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

The present disclosure is directed to etching methods that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

The present: invention addresses the problem of providing a silicon nitride etching liquid composition which is capable of selectively etching Si3N4 with a practical etching selectivity with respect to SiO2, while suppressing regrowth of SiO2, and which is also capable of suppressing pattern collapse of an SiO2 film in the production of a 3D nonvolatile memory cell. A silicon nitride etching liquid composition for producing a 3D nonvolatile memory cell, which contains phosphoric acid, one or more silane coupling agents and water, but which does not contain ammonium ions.

The invention relates to a semiconductor etching BOE waste liquid resource reutilization method, and relates to the technical field of waste liquid treatment and resource recovery, and the semiconductor etching BOE waste liquid resource reutilization method comprises the following steps: S1, waste liquid pretreatment; step S2, silicon removal treatment; s3, removing an additive; step S4, activated carbon adsorption; and S5, component adjustment and refining. The resource recycling method of the BOE waste liquid for semiconductor etching has more excellent additive and metal ion removal rate, and is higher in BOE etching rate and better in surface flatness when being used for a panel.

Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.

The invention relates to a monocrystalline silicon texturing additive for improving heavy line marks of an original silicon wafer as well as a preparation method and application of the monocrystalline silicon texturing additive. The texturing additive comprises the following components in parts by weight: 1-3 parts of a nucleating agent; 0.1 to 1 part of a copolymer; 0.5 to 2 parts of a surfactant; 1-5 parts of a dispersing aid; 1-5 parts of an inorganic base; and 60-80 parts of deionized water. The nucleating agent with a complex structure and various biological activities is adopted, the special main chain and side chain structures of the nucleating agent endow the nucleating agent with unique biological activity and physicochemical characteristics, and components such as the copolymer are compounded for texturing, so that the defect area of the original silicon wafer with heavy line marks is repaired and etched, and meanwhile, the defect area of the original silicon wafer with heavy line marks is repaired. And when a small amount of texturing additive is used, the influence of multiple factors such as the repairing effect and the like is more emphasized.

The invention relates to the technical field of glass processing, and discloses a glass surface AG (anti-glare) etching method based on a Thiessen polygon structure, which comprises the following steps: S1, pretreating a glass substrate: cleaning and polishing the surface of the glass substrate; s2, pattern transfer: coating acid-resistant photoresist on the surface of the glass, and forming a Thiessen polygonal mask pattern through ultraviolet exposure and development; s3, chemical etching: selectively etching the mask pattern area by using an etching solution containing fluoride; and S4, deplating and hydrophobic treatment: removing the residual photoresist, and carrying out hydrophobic modification treatment on the etched surface to form a hydrophobic treatment layer. Through the Thiessen polygon mask and the dynamic etching technology, the etching uniformity is improved, the surface touch feeling is optimized, and the function performance and the production efficiency of the anti-dazzle glass are greatly improved in combination with precise liquid control and an automatic recovery system.

A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below, and a pH is 5.0 or more. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A2) a picolinic acid compound, and a pH is 5.0 or more.[In the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]

Disclosed are stacked etching and shaping ultrathin glass, a manufacturing method therefor and a use thereof. The manufacturing method for the stacked etching and shaping ultrathin glass comprises: immersing a first side of an ultrathin glass body having undergone single-sided protection into a first etching solution; performing first etching on the first side in a manner of rising the liquid level of the first etching solution or moving the position of the ultrathin glass body having undergone single-sided protection relative to the first etching solution, to form an intermediate product containing a first transition area; and performing second etching on a second side, opposite to the first side, of the intermediate product in a manner of rising the liquid level of a second etching solution or moving the position of the intermediate product relative to the second etching solution.

The invention discloses a water-containing acid etching solution and a preparation method thereof, the water-containing acid etching solution comprises acid, ammonium fluoride and a surfactant with the molecular formula of # imgabs0 #, Rf is a long-chain alkyl group, N is nitrogen, R1, R2 and R3 are respectively any one of H or short-chain alkyl groups below C4, and M <-> is anions, and tests show that the water-containing acid etching solution has the advantages that due to the fact that the surfactant with the molecular formula of # imgabs1 # is added, the water-containing acid etching solution can be used for preparing the water-containing acid etching solution; the surface tension of the solution is obviously reduced, compared with a buffer oxide etching solution without adding the surfactant, the surface tension is lower, the etching rate is not greatly changed, the contact angle is also obviously reduced, and the content of particles in the product is not increased by the surfactant, so that the solution can be stored by standing for a long time; and the properties cannot be changed in some extreme environments, and the performance is excellent.

An etchant composition includes hydrogen peroxide, a carboxylic acid-based compound, a fluorine-based compound, and a nitrogen-based cyclic compound. The hydrogen peroxide is included in an amount of 0.001 to 4 wt %. Additionally or alternatively, the weight ratio between the fluorine-based compound and the nitrogen-based cyclic compound is 1:0.01 to 1:3.

The invention relates to the technical field of semiconductor cleaning agents, and particularly discloses an etching solution for SiC surface silicon and a preparation method of the etching solution. The etching solution for SiC surface silicon comprises an aqueous solution of a component A and an aqueous solution of a component B. The component A comprises the following raw materials in parts by weight: 3-8 parts of nitric acid, 1-2 parts of hydrofluoric acid, 0.5-1 part of a complexing agent and 0.1-1 part of a surfactant; the raw materials of the component B comprise modified citric acid and citric acid in a mass ratio of (2.2-5.7): (1-1.8), and the modified citric acid is obtained by modifying a dihydroxy compound. The etching solution for the SiC surface silicon has higher selectivity on the SiC substrate surface silicon and other impurities, the etching effect and the etching rate of the etching solution on the SiC surface silicon are effectively improved, the loss of the SiC substrate is reduced, and the problem of environmental pollution is also reduced.

The invention belongs to the technical field of solar cells, and particularly discloses a texturing additive, a texturing solution and a texturing method of a back contact cell. The texturing additive for the back contact battery comprises the following components in percentage by mass: 1.0%-5.0% of sodium carboxymethyl cellulose, 0.03%-0.2% of sodium lignin sulfonate, 0.003%-0.03% of paeoniflorin, 0.005%-0.05% of salvianolic acid B, 0.001%-0.01% of polyhexamethylene biguanide hydrochloride, 0.3%-1.0% of a buffering agent, 0.01%-0.1% of a surfactant and the balance of water. The components interact with each other, and the texturing additive is added into the texturing liquid to improve the flatness of the texturing surface and effectively solve the problem that the texturing surface is not fully distributed, so that the minority carrier lifetime and the open voltage of the back contact battery are improved, and the photoelectric conversion efficiency of the battery is improved.

An etching method includes: an etching step of bringing an etching gas containing an etching compound into contact with a member to be etched (400) having an etching object (carbon material) subject to etching by the etching gas, plasm etching the etching object, and forming a hole in the etching object. The etching compound is fluoro-dithiethane represented by Chemical Formula CxFyS2, wherein, in Chemical Formula, x is 2 or more and 6 or less and y is 4 or more and 12 or less. The etching gas contains or does not contain at least one type among sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper, and molybdenum, and, when the at least one type of metal is contained, the total concentration of all types of the metals contained is 100 ppb by mass or less.

The present invention provides a semiconductor silicon wafer etching solution, a preparation method and application thereof. The semiconductor silicon wafer etching solution of the present invention comprises the following components in weight proportion: 1-6 parts of inorganic acid; 7-20 parts of ammonium salt; 30-40 parts of organic acid; 30-60 parts of ultrapure water. The preparation method of the semiconductor silicon wafer etching solution of the present invention comprises the following steps: weighing each component according to the weight proportion; first adding ultrapure water into a container, and then adding other components into the container, stabilizing the temperature of the container within 20-40° C. under stirring until all components are completely dissolved, the solution is colorless or light yellow, and a semiconductor silicon wafer etching solution is prepared. The semiconductor silicon wafer etching solution of the present invention is a safe, environmentally friendly and efficient etching solution, the etching rate of the etching solution is stable, the etching surface is flat, and the rough silicon surface has a chemical polishing effect, can be applied in the semiconductor field, and can solve the problem of thinning the silicon substrate of the chip.

A low-temperature etching method including an etching step of setting the temperature of a member to be etched having an etching object containing silicon to 0° C. or less, bringing an etching gas containing an etching compound into contact with the member to be etched, and etching the etching object. The etching gas contains or does not contain high-boiling-point impurities, the high-boiling-point impurities being compounds having at least one type of atom among a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a hydrogen atom, and an oxygen atom in the molecule and having a boiling point of 20° C. or more under a pressure of 101 kPa, and, when the etching gas contains the high-boiling-point impurities, the total concentration of all types of the contained high-boiling-point impurities is 500 ppm by volume or less.

A selective etching solution for a 3D NAND structure sheet is provided. The etching solution includes phosphoric acid, a silane additive 1, a silane additive 2, and water. The etching solution provided by the present invention has etching selectivity on a silicon oxide film and a silicon nitride film, can selectively remove the silicon nitride film and prolong the life of the etching solution, and can adapt to etching of a laminated structure.

The present disclosure relates to a method for etching a molybdenum (Mo) film and a system for performing the method. The disclosed method includes exposing a substrate comprising an outer layer of Mo to an oxygen-containing reactant to convert at least a portion of the outer layer of Mo to molybdenum oxide (MoOx), then exposing the substrate to an etchant comprising one or more S-X bonds, P-X bonds, and Si-X bonds, where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo-containing compound removed from a surface of the substrate, and then exposing the substrate to an etchant comprising one or more S-X bonds, P-X bonds, and Si-X bonds. Therefore, the thickness of the Mo outer layer is reduced.

The embodiment of the invention provides a composition and application thereof, and a cleaning agent and application thereof. The composition can be used for providing a cleaning agent. The cleaning agent can be obtained after the composition is compounded with an oxidizing agent, the etching rate of the cleaning agent to AlN is stable, high-selectivity etching of AlN to AlOx is achieved, the cleaning agent can be well compatible with metal cobalt, and preparation of a high-performance semiconductor device is facilitated; in addition, the composition can be recycled and reused.

The present disclosure aims to provide a technology capable of etching a film at least containing Si and N in a substrate having a film at least containing Si and O and the film at least containing Si and N while suppressing etching of the film at least containing Si and O. The present disclosure relates to an etching method including bringing (I) HF gas and (II) at least one compound selected from the group consisting of a sulfonyl compound, a carbonyl compound, a sulfonyl isocyanate compound, and an isocyanate compound into contact with a substrate having a film at least containing Si and O and a film at least containing Si and N to etch the film at least containing Si and N.

A method for machining a slot (130) on a light-transmitting material (100), and a machining system. In the method, a laser internal engraving process and a wet etching process are combined. The method comprises the steps of: using a laser internal engraving process to perform laser engraving treatment on an area (110) to be machined of the light-transmitting material (100), such that the surface of at least one side of the light-transmitting material (100) is penetrated; and performing wet etching treatment on a product of the laser engraving treatment.