857results about "Surface treatment compositions" patented technology

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

The present: invention addresses the problem of providing a silicon nitride etching liquid composition which is capable of selectively etching Si3N4 with a practical etching selectivity with respect to SiO2, while suppressing regrowth of SiO2, and which is also capable of suppressing pattern collapse of an SiO2 film in the production of a 3D nonvolatile memory cell. A silicon nitride etching liquid composition for producing a 3D nonvolatile memory cell, which contains phosphoric acid, one or more silane coupling agents and water, but which does not contain ammonium ions.

The invention relates to a semiconductor etching BOE waste liquid resource reutilization method, and relates to the technical field of waste liquid treatment and resource recovery, and the semiconductor etching BOE waste liquid resource reutilization method comprises the following steps: S1, waste liquid pretreatment; step S2, silicon removal treatment; s3, removing an additive; step S4, activated carbon adsorption; and S5, component adjustment and refining. The resource recycling method of the BOE waste liquid for semiconductor etching has more excellent additive and metal ion removal rate, and is higher in BOE etching rate and better in surface flatness when being used for a panel.

The invention relates to the technical field of glass processing, and discloses a glass surface AG (anti-glare) etching method based on a Thiessen polygon structure, which comprises the following steps: S1, pretreating a glass substrate: cleaning and polishing the surface of the glass substrate; s2, pattern transfer: coating acid-resistant photoresist on the surface of the glass, and forming a Thiessen polygonal mask pattern through ultraviolet exposure and development; s3, chemical etching: selectively etching the mask pattern area by using an etching solution containing fluoride; and S4, deplating and hydrophobic treatment: removing the residual photoresist, and carrying out hydrophobic modification treatment on the etched surface to form a hydrophobic treatment layer. Through the Thiessen polygon mask and the dynamic etching technology, the etching uniformity is improved, the surface touch feeling is optimized, and the function performance and the production efficiency of the anti-dazzle glass are greatly improved in combination with precise liquid control and an automatic recovery system.

A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below, and a pH is 5.0 or more. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A2) a picolinic acid compound, and a pH is 5.0 or more.[In the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]

An etchant composition includes hydrogen peroxide, a carboxylic acid-based compound, a fluorine-based compound, and a nitrogen-based cyclic compound. The hydrogen peroxide is included in an amount of 0.001 to 4 wt %. Additionally or alternatively, the weight ratio between the fluorine-based compound and the nitrogen-based cyclic compound is 1:0.01 to 1:3.

The invention relates to the technical field of semiconductor cleaning agents, and particularly discloses an etching solution for SiC surface silicon and a preparation method of the etching solution. The etching solution for SiC surface silicon comprises an aqueous solution of a component A and an aqueous solution of a component B. The component A comprises the following raw materials in parts by weight: 3-8 parts of nitric acid, 1-2 parts of hydrofluoric acid, 0.5-1 part of a complexing agent and 0.1-1 part of a surfactant; the raw materials of the component B comprise modified citric acid and citric acid in a mass ratio of (2.2-5.7): (1-1.8), and the modified citric acid is obtained by modifying a dihydroxy compound. The etching solution for the SiC surface silicon has higher selectivity on the SiC substrate surface silicon and other impurities, the etching effect and the etching rate of the etching solution on the SiC surface silicon are effectively improved, the loss of the SiC substrate is reduced, and the problem of environmental pollution is also reduced.

The invention belongs to the technical field of solar cells, and particularly discloses a texturing additive, a texturing solution and a texturing method of a back contact cell. The texturing additive for the back contact battery comprises the following components in percentage by mass: 1.0%-5.0% of sodium carboxymethyl cellulose, 0.03%-0.2% of sodium lignin sulfonate, 0.003%-0.03% of paeoniflorin, 0.005%-0.05% of salvianolic acid B, 0.001%-0.01% of polyhexamethylene biguanide hydrochloride, 0.3%-1.0% of a buffering agent, 0.01%-0.1% of a surfactant and the balance of water. The components interact with each other, and the texturing additive is added into the texturing liquid to improve the flatness of the texturing surface and effectively solve the problem that the texturing surface is not fully distributed, so that the minority carrier lifetime and the open voltage of the back contact battery are improved, and the photoelectric conversion efficiency of the battery is improved.

An etching method includes: an etching step of bringing an etching gas containing an etching compound into contact with a member to be etched (400) having an etching object (carbon material) subject to etching by the etching gas, plasm etching the etching object, and forming a hole in the etching object. The etching compound is fluoro-dithiethane represented by Chemical Formula CxFyS2, wherein, in Chemical Formula, x is 2 or more and 6 or less and y is 4 or more and 12 or less. The etching gas contains or does not contain at least one type among sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper, and molybdenum, and, when the at least one type of metal is contained, the total concentration of all types of the metals contained is 100 ppb by mass or less.

The invention belongs to the technical field of silicon material cleaning, and particularly relates to a silicon material cleaning agent and a preparation method and application thereof. The silicon material cleaning agent provided by the invention comprises the following components in parts by mass: 50-60 parts of water; 15 to 30 parts of an acidic etching solution; 10 to 20 parts of a first chelating agent; 10 to 20 parts of a second chelating agent; 0.5 to 5 parts of a surfactant; 5 to 15 parts of a builder; wherein the first chelating agent is selected from at least one of 1-hydroxyethylidene-1, 1-diphosphonic acid or ethylenediaminetetraacetic acid; the second chelating agent is selected from at least one of citric acid, gluconic acid, tartaric acid, malic acid, sodium citrate, sodium gluconate, potassium pyrophosphate and sodium pyrophosphate. The silicon material cleaning agent is used for silicon material cleaning, various metal ions can be cleaned at a time, the silicon material cleaning efficiency is improved, and the industrial cost is effectively reduced.

Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as derivatives of amino acids that have surface-active properties.

The invention relates to the technical field of etching solutions, and particularly discloses an etching solution for inhibiting etching of metallic titanium and application of the etching solution. The etching solution contains hydrofluoric acid, ammonium fluoride, an additive 1 and an additive 2; wherein the additive 1 is a fluorine capture type inhibitor, and the additive 2 is a surface adsorption type organic protective agent. The etching solution can effectively inhibit the corrosion of a titanium layer while keeping the high etching rate of silicon oxide, obviously improves the etching selection ratio of silicon oxide to titanium, has lower surface tension and higher uniformity, and is suitable for a wet etching scene with a complex structure. The additive 1 captures free fluorine ions through complexation or precipitation, the activity of the fluorine ions is reduced, and therefore the chemical attack on the titanium surface is reduced; and the additive 2 can form a transient adsorption protective film on the titanium surface to further delay the dissolution of titanium. The synergistic effect of the two additives can effectively inhibit titanium corrosion and maintain high etching efficiency.

The invention relates to the field of semiconductor devices, in particular to etching paste as well as a preparation method and an application method thereof. The etching paste comprises an acidic agent, clay, a water-retaining agent and solvent water, the water-retaining agent is obtained by homogenizing hydrogel, the hydrogel is prepared from a crosslinking monomer and water, and the acidic agent is used for providing hydrogen ions. The preparation method comprises the following steps: preparing hydrogel from a crosslinking monomer in water, adding base paste prepared from an acidic agent, clay and solvent water, and mixing and homogenizing to obtain the etching paste. The etching paste is coated on the surface of the substrate to be etched in a graphical manner to form the etching layer in the preset shape, and the etching layer is removed after heat treatment, so that efficient and precise etching of the substrate is realized, reduction of raw material cost, process time cost and waste liquid treatment cost is facilitated, and the method has relatively high practicability.

The invention discloses a preparation method of AG (anti-glare) glass, which comprises the following steps: treating a glass sheet covered by an anhydrous film with a pretreatment solution, passing through an AG glass etching solution, and then carrying out chemical polishing to prepare the AG glass, the AG glass etching liquid is prepared from the following components in parts by weight: 35 to 45 parts of NH4HF2, 5 to 10 parts of NH4F, 8 to 12 parts of BaSO4, 3 to 5 parts of Na2SiF6, 3 to 5 parts of Na3PO4, 0.5 to 0.7 part of starch, 0.4 to 0.6 part of carboxymethyl cellulose, 15 to 23 parts of composite acid and 15 to 25 parts of water. The composite acid is composed of organic acid and inorganic acid according to a mass ratio of (5-7): (10-15). Uniform etching can be achieved without water film covering, and the method is particularly suitable for preparing AG glass from 2.5 / 3D cover plate glass and perforated glass.

A composition contains a periodic acid compound selected from the group consisting of a periodic acid and a salt thereof, an amine compound that is a specific compound represented by Formula (1) or a salt thereof, and water.

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers, have been disclosed. The etching formulations include, consist essentially of or consist of (a) at least one phosphorous containing acid or salt thereof, (b) at least one oxidizing agent, (c) at least one at least one cationic polymer corrosion inhibitor and (d) at least one solvent.

A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.

Provided herein are methods for selectively etching substrates containing silicon dioxide and silicon nitride. The methods enable selective etching of silicon dioxide or silicon nitride in the presence of both materials.

A SiGe selective etching solution relative to SiO and Si is described. The etching solution includes the following components by mass fraction: fluoride 0.001-10 wt%; oxidizer 0.001-60 wt%; buffer composition 0.01-50 wt%; silica inhibitor 0.0001-10 wt%; silicon inhibitor 0.0001-10 wt%; stabilizer 0.0001-20 wt%; with the balance being water. The composition of the present invention can be used to selectively remove SiGe from a microelectronic device having a stack of Si, SiO, and SiGe thereon relative to Si and SiO in the process of manufacturing microelectronic devices.

Mixtures configured to etch a thin film of an integrated circuit material are disclosed. The mixtures may include a first compound comprising one or more of: A, B, and C; and a second compound comprising one or more of: oxygen, argon, helium, nitrogen, octafluorocyclobutane (C4F8), hexafluorobutadiene (C4F6), carbonyl fluoride (COF2), difluoromethane (CH2F2), trifluoromethane (CHF3), carbon tetrafluoride (CF4), methyl fluoride (CH3F), octafluorocyclopentene (C5F8), 2,3,3,3-tetrafluoropro-l-ene (C3H2F4), 2,3,3,3-tetrafluoropro-l-ene (C3H2F4), hexafluoropropene (C3F6), hexafluorocyclopropane (C3F6), or 1,1,3,3,3-pentafhioropropene (C3HF5).

This invention discloses a method for manufacturing anti-glare glass and anti-glare glass, the method for manufacturing anti-glare glass comprising: a mask layer attachment step of attaching a mask layer having a plurality of regularly arranged holes to at least one surface of a glass substrate; a chemical etching step of etching the surface of the glass substrate to which the mask layer is attached; a mask layer removal step of removing the mask layer after the completion of the chemical etching step to obtain a glass substrate on which independent concave particles are uniformly distributed on the surface; and a chemical polishing step of chemically polishing the surface of the glass substrate from which the mask layer has been removed, wherein in the chemical polishing step, the polishing is carried out until adjacent concave particles overlap and share the same edge. The design of the mask layer, chemical etching and chemical polishing solves the technical challenge of not being able to achieve both high anti-glare performance and low sparkle.

The present invention describes a composition for selectively etching a layer comprising an aluminum compound in the presence of a layer of low-k material and / or a layer comprising copper and / or cobalt and a corresponding use of the composition. Further described is a method for manufacturing a semiconductor device comprising the step of selectively etching at least one layer comprising an aluminum compound by contacting the at least one layer comprising an aluminum compound with said composition in the presence of a layer of low-k material and / or a layer comprising copper and / or cobalt.

The invention discloses a monocrystalline silicon wafer alkali polishing additive and a preparation method and application thereof, and the alkali polishing additive comprises the following components by mass content: 0.5-4% of a reaction accelerator, 2-5% of a corrosion and scale inhibitor, 1.5-3% of a chelating agent, 1-3% of a pH regulator, 1-5% of a surfactant, 3-10% of a cosolvent and the balance of water according to the total mass of 100%. The alkali polishing additive is obvious in performance gain, good in etching selectivity and small in silicon wafer weight loss; the back polishing effect can be improved, the reflectivity of the silicon wafer is high, and the photoelectric conversion efficiency of a photovoltaic cell is improved; the anti-crystallization performance is excellent, and the environment is protected.

An etching composition that includes a quaternary ammonium salt having 8 or more carbon atoms and selectively dissolves silicon over silicon germanium, and may further include a chelating agent, an etching method comprising etching a structure that contains silicon and silicon germanium by using the etching composition, a method for manufacturing a semiconductor device, and a method for manufacturing a gate-all-around-type transistor using the etching composition.

There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

This invention provides a high-selectivity dry etching method for surface convergence before p-GaN regrowth, comprising: etching the surface of the p-GaN layer or GaN layer of a GaN / AlGaN heterojunction in a Cl-based gas atmosphere to remove the native oxide layer and contaminants; introducing a mixture of BCl3 and fluorine-containing gas into a reaction chamber under inductively coupled plasma conditions, and maintaining the self-bias voltage within a first preset range for etching to selectively remove the p-GaN layer or GaN layer and achieve near-stop etching in the AlGaN layer, wherein the fluorine-containing gas is used to form an aluminum fluoride layer on the surface of the AlGaN layer to inhibit etching; and reducing the self-bias voltage from the first preset range to a second preset range and / or reducing the proportion of fluorine-containing gas in the mixed gas under plasma conditions to perform convergence treatment on the surface of the near-stop etched structure. This improves the repeatability of the process window and the adaptability of the regeneration length.