503results about "Surface treatment compositions" patented technology

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

The present: invention addresses the problem of providing a silicon nitride etching liquid composition which is capable of selectively etching Si3N4 with a practical etching selectivity with respect to SiO2, while suppressing regrowth of SiO2, and which is also capable of suppressing pattern collapse of an SiO2 film in the production of a 3D nonvolatile memory cell. A silicon nitride etching liquid composition for producing a 3D nonvolatile memory cell, which contains phosphoric acid, one or more silane coupling agents and water, but which does not contain ammonium ions.

A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below, and a pH is 5.0 or more. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A2) a picolinic acid compound, and a pH is 5.0 or more.[In the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]

The invention relates to the technical field of semiconductor cleaning agents, and particularly discloses an etching solution for SiC surface silicon and a preparation method of the etching solution. The etching solution for SiC surface silicon comprises an aqueous solution of a component A and an aqueous solution of a component B. The component A comprises the following raw materials in parts by weight: 3-8 parts of nitric acid, 1-2 parts of hydrofluoric acid, 0.5-1 part of a complexing agent and 0.1-1 part of a surfactant; the raw materials of the component B comprise modified citric acid and citric acid in a mass ratio of (2.2-5.7): (1-1.8), and the modified citric acid is obtained by modifying a dihydroxy compound. The etching solution for the SiC surface silicon has higher selectivity on the SiC substrate surface silicon and other impurities, the etching effect and the etching rate of the etching solution on the SiC surface silicon are effectively improved, the loss of the SiC substrate is reduced, and the problem of environmental pollution is also reduced.

The invention belongs to the technical field of solar cells, and particularly discloses a texturing additive, a texturing solution and a texturing method of a back contact cell. The texturing additive for the back contact battery comprises the following components in percentage by mass: 1.0%-5.0% of sodium carboxymethyl cellulose, 0.03%-0.2% of sodium lignin sulfonate, 0.003%-0.03% of paeoniflorin, 0.005%-0.05% of salvianolic acid B, 0.001%-0.01% of polyhexamethylene biguanide hydrochloride, 0.3%-1.0% of a buffering agent, 0.01%-0.1% of a surfactant and the balance of water. The components interact with each other, and the texturing additive is added into the texturing liquid to improve the flatness of the texturing surface and effectively solve the problem that the texturing surface is not fully distributed, so that the minority carrier lifetime and the open voltage of the back contact battery are improved, and the photoelectric conversion efficiency of the battery is improved.

The invention relates to the technical field of etching solutions, and particularly discloses an etching solution for inhibiting etching of metallic titanium and application of the etching solution. The etching solution contains hydrofluoric acid, ammonium fluoride, an additive 1 and an additive 2; wherein the additive 1 is a fluorine capture type inhibitor, and the additive 2 is a surface adsorption type organic protective agent. The etching solution can effectively inhibit the corrosion of a titanium layer while keeping the high etching rate of silicon oxide, obviously improves the etching selection ratio of silicon oxide to titanium, has lower surface tension and higher uniformity, and is suitable for a wet etching scene with a complex structure. The additive 1 captures free fluorine ions through complexation or precipitation, the activity of the fluorine ions is reduced, and therefore the chemical attack on the titanium surface is reduced; and the additive 2 can form a transient adsorption protective film on the titanium surface to further delay the dissolution of titanium. The synergistic effect of the two additives can effectively inhibit titanium corrosion and maintain high etching efficiency.

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers, have been disclosed. The etching formulations include, consist essentially of or consist of (a) at least one phosphorous containing acid or salt thereof, (b) at least one oxidizing agent, (c) at least one at least one cationic polymer corrosion inhibitor and (d) at least one solvent.

A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.

Provided herein are methods for selectively etching substrates containing silicon dioxide and silicon nitride. The methods enable selective etching of silicon dioxide or silicon nitride in the presence of both materials.

This invention discloses a method for manufacturing anti-glare glass and anti-glare glass, the method for manufacturing anti-glare glass comprising: a mask layer attachment step of attaching a mask layer having a plurality of regularly arranged holes to at least one surface of a glass substrate; a chemical etching step of etching the surface of the glass substrate to which the mask layer is attached; a mask layer removal step of removing the mask layer after the completion of the chemical etching step to obtain a glass substrate on which independent concave particles are uniformly distributed on the surface; and a chemical polishing step of chemically polishing the surface of the glass substrate from which the mask layer has been removed, wherein in the chemical polishing step, the polishing is carried out until adjacent concave particles overlap and share the same edge. The design of the mask layer, chemical etching and chemical polishing solves the technical challenge of not being able to achieve both high anti-glare performance and low sparkle.

The present invention describes a composition for selectively etching a layer comprising an aluminum compound in the presence of a layer of low-k material and / or a layer comprising copper and / or cobalt and a corresponding use of the composition. Further described is a method for manufacturing a semiconductor device comprising the step of selectively etching at least one layer comprising an aluminum compound by contacting the at least one layer comprising an aluminum compound with said composition in the presence of a layer of low-k material and / or a layer comprising copper and / or cobalt.

The invention discloses a monocrystalline silicon wafer alkali polishing additive and a preparation method and application thereof, and the alkali polishing additive comprises the following components by mass content: 0.5-4% of a reaction accelerator, 2-5% of a corrosion and scale inhibitor, 1.5-3% of a chelating agent, 1-3% of a pH regulator, 1-5% of a surfactant, 3-10% of a cosolvent and the balance of water according to the total mass of 100%. The alkali polishing additive is obvious in performance gain, good in etching selectivity and small in silicon wafer weight loss; the back polishing effect can be improved, the reflectivity of the silicon wafer is high, and the photoelectric conversion efficiency of a photovoltaic cell is improved; the anti-crystallization performance is excellent, and the environment is protected.

An etching composition that includes a quaternary ammonium salt having 8 or more carbon atoms and selectively dissolves silicon over silicon germanium, and may further include a chelating agent, an etching method comprising etching a structure that contains silicon and silicon germanium by using the etching composition, a method for manufacturing a semiconductor device, and a method for manufacturing a gate-all-around-type transistor using the etching composition.

This invention provides a high-selectivity dry etching method for surface convergence before p-GaN regrowth, comprising: etching the surface of the p-GaN layer or GaN layer of a GaN / AlGaN heterojunction in a Cl-based gas atmosphere to remove the native oxide layer and contaminants; introducing a mixture of BCl3 and fluorine-containing gas into a reaction chamber under inductively coupled plasma conditions, and maintaining the self-bias voltage within a first preset range for etching to selectively remove the p-GaN layer or GaN layer and achieve near-stop etching in the AlGaN layer, wherein the fluorine-containing gas is used to form an aluminum fluoride layer on the surface of the AlGaN layer to inhibit etching; and reducing the self-bias voltage from the first preset range to a second preset range and / or reducing the proportion of fluorine-containing gas in the mixed gas under plasma conditions to perform convergence treatment on the surface of the near-stop etched structure. This improves the repeatability of the process window and the adaptability of the regeneration length.

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated from a second process gas comprising tungsten; and (d) etching the recess with a third plasma generated from a third process gas.

The disclosed and claimed subject matter relates to etching compositions and methods of using the same to manufacture semiconductor devices that can selectively remove silicon films while minimizing the etch rate of oxide films.

The invention relates to the technical field of anti-dazzle films, in particular to a stripping etching liquid medicine for an anti-dazzle film layer and a preparation method of the stripping etching liquid medicine. 3.8 to 6 parts of organic amine; 8-13 parts of an organic solvent; 3 to 5.5 parts of a surfactant; 0.8 to 1.1 parts of a cellulose composition; 1.4 to 2.7 parts of a stripping auxiliary agent; 49 to 63 parts of deionized water; wherein the castor oil sodium sulfonate in the stripping auxiliary agent is beneficial to quickly and uniformly wetting the stripping etching liquid medicine on the surface of the anti-dazzle film layer and promoting the stripping uniformity, and the bio-based compound has good wetting capacity and infiltration capacity, so that the liquid medicine is beneficial to wetting and going deep into the film layer, and the stripping efficiency is further improved; the cellulose composition can enhance the viscosity of the liquid medicine, prolong the action time of effective components, ensure thorough separation of organic resin and realize clean and thorough stripping, and has a wide application prospect.

Colorless etchant compositions and method of obtaining colorless etchant compositions are provided. Etchant compositions may comprise a phosphoric acid, an amine-containing compound, and a light absorbing compound. The light absorbing compound is a reaction product of the phosphoric acid and a decolorizing agent. The decolorizing agent may comprise a lanthanide compound in its highest oxidation state and have strong scavenging properties of reactive oxygen species or organic radicals formed during thermally or photochemically induced amine oxidation.

The present invention relates to an etching liquid composition for a silver-containing thin film, which contains (A) nitric acid, (B) a polycarboxylic acid, (C) a monocarboxylic acid, (D) a bisulfate, (E) an aliphatic sulfonic acid, (F) an aromatic sulfonic acid, and (G) water, and has a recrystallization control index (R) of 75 to 110, thereby preventing the occurrence of solid recrystallization in the etching liquid composition, and to an etching method using the same. And the etching performance is excellent.

A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.

In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and water. The polishing composition can have a high copper removal rate of at least 3500 Å / min, and a polishing selectivity of copper to silicon dioxide(Cu:SiO2) can be at least 2.5:1. In another embodiment, a combination product can comprise a first polishing composition and a second polishing composition, wherein each of the first polishing composition and the second polishing composition can comprise abrasive particles including zirconia and an oxidizing agent including hydroxylamine, wherein a hydroxylamine weight% ratio of the first polishing composition to the second polishing composition may be at least 5:1.

In one general approach, a method for fabricating a MXene includes etching a MAX phase for selectively removing an A group element from the MAX phase, thereby forming a multilayer MXene. The multilayer MXene is then intercalated and exfoliated. In another general approach, a method for fabricating a MXene includes contacting a MAX phase with an acid and a fluorophosphate salt in a nonaqueous solvent for selectively removing an A group element from the MAX phase, thereby forming a multilayer MXene. The multilayer MXene is then intercalated and exfoliated.

The invention relates to an etching solution for etching a composite layer coated on PET and a preparation method thereof, the etching solution comprises the following preparation raw materials by weight: 20-36% of hydrofluoric acid, 5-15% of an organic chelating agent, 3-5% of a surfactant, 2-4% of a modified nano system, and the balance of water; the organic chelating agent comprises organic acid and N-[3-(dimethylamino) propyl] octadecanamide. The etching solution has the effect of improving the etching stability of the etching solution.

To provide an etching method using hexafluoropropene.SOLUTION: Etching gas contains at least one kind of component selected from the group consisting of hexafluoropropene and hexafluorocyclopropane, and a dimer and / or a trimer derived from hexafluoropropene and hexafluorocyclopropane. With respect to the total amount of the etching gas, (1) 95 vol.% to 99.99999 vol.% of the hexafluoropropene is contained, and (2) 1 vol.ppm to 1,000 vol.ppm of at least one kind of component selected from the group consisting of hexafluoropropene and hexafluorocyclopropane, and a dimer and / or a trimer derived from hexafluoropropene and hexafluorocyclopropane is contained.SELECTED DRAWING: None

The application provides an Ag etching solution, a preparation method and application thereof. The Ag etching solution comprises the following components in a weight ratio: 40-80 parts of inorganic acid; 10-50 parts of organic acid; 0.05-1.5 parts of corrosion inhibitor; 0.1-2 parts of chelating agent; 1-7.5 parts of buffer; and 30-50 parts of ultrapure water. The application further discloses a preparation method of the Ag etching solution and application thereof in the field of etching ITO-Ag-ITO composite layers. The inorganic acid is selected from one or more of phosphoric acid, sulfuric acid, carbonic acid, boric acid, hydrobromic acid, iodic acid, hypoiodous acid, hydrofluoric acid and nitric acid. The inorganic acid is preferably phosphoric acid and nitric acid. The Ag etching solution has a stable etching rate for ITO-Ag-ITO, and is not damaged to the insulating layer and photoresist, and can be used in the OLED pixel electrode manufacturing process, and the Ag layer is not provided with burrs and is not shrunk after etching.

A method is disclosed for irradiating an etching solution to provide controlled etching of a material. An etching solution (e.g., gas, liquid, or a combination thereof) having a first level of reactants is applied to the surface of the material to be etched. The etching solution is irradiated so that the etching solution has a second level of reactants greater than the first level. The surface of the material is modified (e.g., oxidized) by the irradiated etching solution, and the modified layer of the material is removed. The exposure and removal can be repeated or cycled to etch the material. Furthermore, in oxidation / dissolution embodiments, oxidation and dissolution can occur simultaneously, and the oxidation rate can be greater than the dissolution rate. The material can be a polycrystalline material, polycrystalline metal, and / or other material. One etching solution can include hydrogen peroxide, which is irradiated to form hydroxyl radicals.