252results about "Aqueous dispersions" patented technology

The invention discloses a small tower footing alkali polishing additive suitable for high back contact of a TOPCon battery and a use method of the small tower footing alkali polishing additive, and relates to the technical field of monocrystalline silicon polishing. Comprising the following components: a corrosion catalyst, a multi-carboxyl polymer, a high-wetting defoaming agent, a surfactant, a chelating agent, a protective agent, hyperbranched polylysine, tannic acid, quinoline yellow, caffeine, 3-(N-morpholinyl)-2-sodium hydroxypropanesulfonate and deionized water. The alkali polishing additive is good in polishing effect under the condition of low weight loss, a relatively rough small-size tower footing can be formed on the back face of a silicon wafer after alkali polishing, and the cell conversion efficiency is gained.

The invention discloses a synthesis method of a hydrazine dicarboxylate modified cerium dioxide abrasive, and belongs to the technical field of precise polishing materials. The method comprises the following steps: taking cerous nitrate as a raw material, and preparing a cerous carbonate precursor through an ammonium carbonate precipitation reaction; and grinding and calcining the obtained precursor and hydrazine dicarboxylate to obtain the CeO2 grinding material with the surface rich in oxygen vacancies. And Ce < 4 + > can be partially reduced into Ce < 3 + > by reducing fragments generated by decomposition of the hydrazine dicarboxylate in the calcining process, so that an oxygen vacancy structure is formed through induction, and the chemical activity and the reaction rate of the abrasive are improved. The obtained grinding material shows excellent performance in chemical mechanical polishing (CMP) of K9 glass, the material removal rate (MRR) is increased by about 3.6 times compared with that of unmodified CeO2, the surface roughness (Ra) is reduced to about 0.16 nm or below, and grinding material particles are good in dispersity and less in agglomeration. The used hydrazine dicarboxylate is stable, low in toxicity and mild in reaction, and the particle size can be prevented from excessively growing while the high oxygen vacancy concentration is kept.

The invention relates to the technical field of chemical mechanical polishing, particularly discloses a method for controlling the surface concave-convex rate difference by adopting an abrasive-free copper CMP (Chemical Mechanical Polishing) solution, aims to realize abrasive-free chemical mechanical polishing so as to solve the problem of surface scratch caused by the abrasive action in the polishing process, and is suitable for a substrate polishing solution containing a copper metal layer. The polishing solution comprises a macromolecular chelating agent with the molecular weight of 300-500 g / mol, wherein the optimal molecular weight is 400 g / mol. The alkalescent copper polishing solution prepared by utilizing the macromolecular chelating agent has the advantages that the removal rate of concave parts is low and the polishing rate of convex parts is high through strong chemical reaction under the conditions of no abrasive and no corrosion inhibitor, so that the high-speed difference of the concave parts and the convex parts is generated, and the planarization is realized. Under the condition of alkalescence, no grinding material and no corrosion inhibitor, the polishing solution has high correction capacity on the height difference of the copper surface, and the problems of high polishing pressure, many surface scratches and difficulty in cleaning caused by a traditional method are solved.

The inorganic particle according to the present invention is composed of aggregation of crystalline and amorphous small particles and has a spherical and smooth surface. The spherical appearance, low crystallinity and narrow particle size distribution of inorganic particle are more advantageous in reducing scratch defects in the CMP process. In addition, since the small particles on the surface of the inorganic particle provide more active sites, the inorganic particle has an excellent removal rate, so it is advantageous as a next-generation CMP abrasive.

A composition is provided that includes a graphene dispersion, a silicone microemulsion, a reactive siloxane emulsion, and water as a majority by weight of the composition. A process for imparting a durable shine to a vehicle surface is also provided. The composition is applied to the vehicle surface. The water is allowed to evaporate from the composition to form a coating imparting a durable shine to the vehicle surface. A coating is obtained after evaporation. The coating includes a silicone film formed by the evaporation of water from a silicone microemulsion and the cross-linking of a siloxane from an emulsion. Graphene particles are embedded in the silicone film. The coating has a thickness of between having a thickness of between 5 and 10,000 nanometers and a hardness of between 3 and 7 GPa.

The invention discloses an alkali polishing additive for rapid polishing of monocrystalline silicon and a use method of the alkali polishing additive, and relates to the technical field of monocrystalline silicon etching, and the alkali polishing additive comprises the following components: a reaction accelerator, a corrosion and scale inhibitor, a PH regulator, a defoaming agent, 1, 3-bis (2-hydroxyethyl)-2-imidazolinone, 2, 5-furandimethanol, quinoline yellow, sodium glycyrrhizinate, melamine, hydroxypropyl chitosan and deionized water. The additive is good in alkali polishing effect under low weight loss, high in efficiency, good in stability, good in polished surface appearance and obvious in gain effect on the light conversion efficiency of the solar cell.

The present invention relates to: a slurry composition for final polishing of a silicon wafer, which reduces haze and the number of defects in the surface of an object to be polished and has excellent performance; and a final polishing method using same, the slurry composition comprising 1-20 wt % of colloidal silica as abrasive particles, 0.03-0.5 wt % of a surfactant, 0.1-10 wt % of a pH adjuster, 0.02-2 wt % of a water-soluble thickener, 0.05-0.2 wt % of a chelating agent, and 0.1-1 wt % of an organic base.

The invention discloses a monocrystalline silicon alkali polishing additive with an inverted pyramid structure tower footing and application of the monocrystalline silicon alkali polishing additive. The monocrystalline silicon alkali polishing additive comprises, by mass, 1-2 parts of glue, 0.5-2 parts of sodium lignin sulfonate, 1-3 parts of quaternary ammonium salt, 0.1-0.3 part of sodium benzoate, 2-3 parts of DL-proline, 2-5 parts of other auxiliaries and the balance deionized water. By adding the additive disclosed by the invention into a polishing solution for alkali polishing of monocrystalline silicon, the reaction rate of a [111] / [100] surface can be changed, the reaction rate of a [110] surface can be increased, an inverted pyramid structure which is uniformly distributed and complete in structure can be formed on the back surface of the monocrystalline silicon, the roughness of the back surface of the monocrystalline silicon can be increased, on one hand, back slurry contact and slurry tension improvement are facilitated, and FF can be improved; and on the other hand, the double-sided rate of the photovoltaic module is improved, thereby improving the electrical performance of the battery piece.

An aqueous based chemical mechanical polishing composition for polishing a semiconductor substrate includes an abrasive having bimodal distributed colloidal silica particles which include elongated colloidal silica particles, polyvinyl alcohol 80% hydrolyzed to less than or equal to 90% hydrolyzed, an electrolyte and a pH greater than 7, and a method of polishing the semiconductor substrate to planarize the substrate. The aqueous based chemical mechanical polishing composition and method inhibits polishing pad groove clogging during chemical mechanical polishing of the semiconductor substrates.

The invention provides a surface polishing method of a perovskite crystal material, which comprises the following steps: carrying out hot inlaying treatment on a perovskite single crystal to be polished to obtain a perovskite single crystal sample; fixing the perovskite single crystal sample on a polishing table, and carrying out coarse grinding and polishing on the perovskite single crystal sample; the perovskite single crystal sample after coarse grinding is subjected to fine grinding and polishing, a polished perovskite single crystal sample is obtained, and the fine grinding and polishing process comprises the steps that artificial leather polishing cloth is used, and absolute ethyl alcohol is used as a polishing solution for first dropwise adding treatment; after a preset time interval of the first dropwise adding treatment, replacing absolute ethyl alcohol with a suspension of dimethyl sulfoxide and absolute ethyl alcohol, and carrying out second dropwise adding treatment.

The invention provides a complex micro-fine inner flow channel fluid polishing method based on a weak oxidation and micro-friction composite effect, which comprises the following steps: conveying a polishing solution containing micro-nano bubbles into an inner flow channel of a to-be-polished workpiece according to preset parameters, and swinging and / or rotating the to-be-polished workpiece in a reciprocating manner according to the preset parameters, polishing of an inner runner of the workpiece is achieved; wherein a uniform amorphous oxide layer is formed on the surface of the inner flow channel through the comprehensive action of an oxidizing agent, a corrosion inhibitor and a surfactant which are arranged in the polishing solution, and then the amorphous oxide layer is stripped through the comprehensive action force generated by fluid movement and micro-nano bubble explosion; and polishing of the inner runner of the workpiece is realized by circularly performing the processes of forming the amorphous oxide layer and stripping the amorphous oxide layer. According to the method disclosed by the invention, weak corrosion and micro-friction stripping are circularly carried out by combining the combined action of the chemical corrosion force of the polishing solution and the mechanical friction force of the fluid and the micro-nano bubbles, so that uniform and effective processing of the inner runner is realized.

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate. In some examples, linear motion may be used for chemically planarizing.

Chemical mechanical polishing compositions and methods for preventing clogging of polishing pad grooves are disclosed. The chemical mechanical polishing composition comprises water, an abrasive having bimodal distribution of colloidal silica particles, including elongate colloidal silica particles, from 80% to less than or equal to 90% hydrolyzed polyvinyl alcohol, an electrolyte, and a pH greater than 7. The method comprises the following steps: providing a substrate containing silicon oxide; providing the chemical mechanical polishing composition; providing a chemical mechanical polishing pad having a polishing surface and a recess; creating a dynamic contact at an interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a downforce of 20 to 35 kPa; a chemical mechanical polishing composition is dispensed onto a chemical mechanical polishing pad at or near an interface between the chemical mechanical polishing pad and a substrate. The water-based chemical mechanical polishing composition and method inhibit polishing pad recess clogging during chemical mechanical polishing of a semiconductor substrate.

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.

A photoelectric fluid field cluster catalytic method for atomic-scale deterministic processing, comprises the following steps: selecting nanoparticles with photocatalytic activity as a photocatalytic medium, and using a photoreduction method to realize the precipitation of metal nanoparticles on a surface of the photocatalytic medium, thus creating photoelectrocatalytic clusters; illuminating a coupling area between a surface to be processed of a workpiece, the photoelectrocatalytic clusters and a flexible tool with a catalytic light source, and simultaneously applying a bias voltage to a conductive tray of the workpiece; and applying a normal load to a flexible tool head and setting a rotation speed to generate a hydrodynamic pressure to drive a polishing solution to flow, thus enabling controllable removal with atomic-level precision. The disclosure utilizes the metal particles in the photoelectrocatalytic clusters to capture photogenerated electrons, thereby prolonging the lifetime of photogenerated carriers.

To provide polishing slurry and a method of manufacturing a semiconductor device.SOLUTION: Polishing slurry includes a fullerene derivative and a compound having at least one positively charged functional group. Also provided is a method of manufacturing a semiconductor device using the polishing slurry.SELECTED DRAWING: Figure 1

The invention discloses a chemical mechanical polishing composition suitable for silicon-based device planarization in the field of semiconductor manufacturing and application of the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises an oxidizing agent, polyethylene glycol grafted silica sol, a complexing agent, bipyridine and derivatives thereof, a corrosion inhibitor, a surfactant and deionized water. The silica sol in the polishing composition is the silica sol with the surface grafted by polyethylene glycol, and the polyethylene glycol grafted silica sol is matched with bipyridine and derivatives thereof, so that the effects of improving agglomeration of silica sol particles, reducing surface defects after polishing and reducing silica sol particle residues on the surface of a material after polishing can be achieved.

The invention relates to a chemical polishing bath for polishing a component made of titanium or titanium alloy, or a portion of said component, which bath comprises water, a fluoride complexing agent capable of forming a complex with the oxidized titanium, at an equivalent fluoride concentration between 1.40 and 2.80 mol / l, phosphoric acid at a concentration between 3 and 6 mol / l, and also sulfuric acid at a concentration between 0.5 and 1.5 mol / l. The bath is particularly suitable for polishing components resulting from additive manufacturing (3D printing).

A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.

The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

[Problem] To provide polishing compositions and methods that can enable control over the SiN removal rate.[Solution] Polishing compositions comprising an abrasive comprising cationic particles; a SiN polishing rate suppressor; and water, wherein the composition has a pH of less than 5, are capable of reducing the polishing rate of SiN to a second material X (e.g., spin-on carbon). Polishing compositions comprising an abrasive comprising cationic particles; a SiN polishing rate enhancer; and water, wherein the composition has a pH of less than or equal to 5, are capable of increasing the polishing rate of SiN to a second material X (e.g., spin-on carbon).

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.

A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes (A) a 4-pyrone-based compound represented by General Formula (1) below, and (B1) a compound of which a 1 mM aqueous solution has a pH of 3.7 or more or (B2) a cyclic compound having at least one functional group selected from the group consisting of a carboxy group, a carboxylate group, an amino group, and a hydroxy group. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.[in the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]

A polishing liquid containing: abrasive grains containing a cerium oxide; at least one aromatic carboxylic acid compound selected from the group consisting of aromatic carboxylic acids and salts thereof; and halide ions. Also provided is a polishing method in which a member to be polished is polished using the polishing liquid. Also provided is a method for manufacturing a component, in which a component is obtained using the member to be polished that has been polished by the polishing method. Also provided is a method for manufacturing a semiconductor component, in which a semiconductor component is obtained using a member to be polished that has been polished by the aforementioned polishing method.

A method is disclosed for irradiating an etching solution to provide controlled etching of a material. An etching solution (e.g., gas, liquid, or a combination thereof) having a first level of reactants is applied to the surface of the material to be etched. The etching solution is irradiated so that the etching solution has a second level of reactants greater than the first level. The surface of the material is modified (e.g., oxidized) by the irradiated etching solution, and the modified layer of the material is removed. The exposure and removal can be repeated or cycled to etch the material. Furthermore, in oxidation / dissolution embodiments, oxidation and dissolution can occur simultaneously, and the oxidation rate can be greater than the dissolution rate. The material can be a polycrystalline material, polycrystalline metal, and / or other material. One etching solution can include hydrogen peroxide, which is irradiated to form hydroxyl radicals.

A chemical mechanical polishing (CMP) slurry can comprise a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles can have a body including a core comprising zirconia and a shell overlying at least a portion of the core, wherein the shell comprises silica; an oxidizing agent; and a carrier. The CMP slurry can comprise at least one of a Hydrogen Peroxide Stability %Reduction of not greater than 50%; and a high copper material removal rate.

The present invention relates to a slurry composition for final polishing of silicon wafers, which is excellent in terms of performance of reducing the number of defects and reducing haze on the surface of an object to be polished, and which comprises 1 to 20% by weight of colloidal silica as abrasive grains, 0.03 to 0.5% by weight of a surfactant, 0.1 to 10% by weight of a pH adjuster, 0.02 to 2% by weight of a water-soluble thickener, 0.05 to 0.2% by weight of a chelating agent, and 0.1 to 1% by weight of an organic base, and a method for final polishing using the same.

The invention relates to a chemical polishing bath for polishing a titanium or titanium alloy component, or a part thereof, which chemical polishing bath comprises water, a fluoride complexing agent capable of forming a complex with oxidized titanium at an equivalent fluoride concentration of between 1.40 and 2.80 mol / L, phosphoric acid in a concentration of between 3 and 6 mol / L, together with sulfuric acid in a concentration of between 0.5 and 1.5 mol / L.The bath is particularly well suited to polishing components obtained from additive manufacturing (3D printing).

The disclosure provides a surface polishing method of a perovskite crystal material, comprising: performing hot mounting treatment on a perovskite single crystal to be polished to obtain a perovskite single crystal sample; fixing the perovskite single crystal sample on a polishing table and performing rough polishing on the perovskite single crystal sample; and performing fine polishing on the rough-polished perovskite single crystal sample to obtain a polished perovskite single crystal sample, wherein the process of fine polishing comprises: using artificial leather polishing cloth and performing first drop processing using anhydrous ethanol as a polishing liquid; and after a preset time interval elapses after the first drop processing, replacing the anhydrous ethanol with a suspension of dimethyl sulfoxide and anhydrous ethanol for second drop processing.

The invention discloses an N-region etching structure of a TBC battery, an etching additive and an etching polishing solution. The additive comprises the following components in percentage by mass: 0.5-1% of a selective inhibitor, 0.5-1% of a defoaming agent, 1-1.5% of a dispersing agent, 0.5-1% of a stabilizer and the balance of deionized water, wherein the selective inhibitor is a dimethyl diallyl ammonium chloride-acrylamide copolymer. The additive disclosed by the invention is applied to an N-region selective etching process of a TBC battery, and an included angle between a {111} surface and a {100} surface of a silicon crystal can be changed into a vertical morphology from a traditional 54.7-degree single inclined surface, so that the transverse transmission distance of a hole is obviously shortened, the width of a GAP region can be further reduced, and the effective light receiving area is improved, thereby obviously improving the efficiency.