109results about "Aqueous dispersions" patented technology

The invention discloses a synthesis method of a hydrazine dicarboxylate modified cerium dioxide abrasive, and belongs to the technical field of precise polishing materials. The method comprises the following steps: taking cerous nitrate as a raw material, and preparing a cerous carbonate precursor through an ammonium carbonate precipitation reaction; and grinding and calcining the obtained precursor and hydrazine dicarboxylate to obtain the CeO2 grinding material with the surface rich in oxygen vacancies. And Ce < 4 + > can be partially reduced into Ce < 3 + > by reducing fragments generated by decomposition of the hydrazine dicarboxylate in the calcining process, so that an oxygen vacancy structure is formed through induction, and the chemical activity and the reaction rate of the abrasive are improved. The obtained grinding material shows excellent performance in chemical mechanical polishing (CMP) of K9 glass, the material removal rate (MRR) is increased by about 3.6 times compared with that of unmodified CeO2, the surface roughness (Ra) is reduced to about 0.16 nm or below, and grinding material particles are good in dispersity and less in agglomeration. The used hydrazine dicarboxylate is stable, low in toxicity and mild in reaction, and the particle size can be prevented from excessively growing while the high oxygen vacancy concentration is kept.

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate. In some examples, linear motion may be used for chemically planarizing.

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.

To provide polishing slurry and a method of manufacturing a semiconductor device.SOLUTION: Polishing slurry includes a fullerene derivative and a compound having at least one positively charged functional group. Also provided is a method of manufacturing a semiconductor device using the polishing slurry.SELECTED DRAWING: Figure 1

The invention relates to a chemical polishing bath for polishing a component made of titanium or titanium alloy, or a portion of said component, which bath comprises water, a fluoride complexing agent capable of forming a complex with the oxidized titanium, at an equivalent fluoride concentration between 1.40 and 2.80 mol / l, phosphoric acid at a concentration between 3 and 6 mol / l, and also sulfuric acid at a concentration between 0.5 and 1.5 mol / l. The bath is particularly suitable for polishing components resulting from additive manufacturing (3D printing).

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.

A method is disclosed for irradiating an etching solution to provide controlled etching of a material. An etching solution (e.g., gas, liquid, or a combination thereof) having a first level of reactants is applied to the surface of the material to be etched. The etching solution is irradiated so that the etching solution has a second level of reactants greater than the first level. The surface of the material is modified (e.g., oxidized) by the irradiated etching solution, and the modified layer of the material is removed. The exposure and removal can be repeated or cycled to etch the material. Furthermore, in oxidation / dissolution embodiments, oxidation and dissolution can occur simultaneously, and the oxidation rate can be greater than the dissolution rate. The material can be a polycrystalline material, polycrystalline metal, and / or other material. One etching solution can include hydrogen peroxide, which is irradiated to form hydroxyl radicals.

A chemical mechanical polishing (CMP) slurry can comprise a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles can have a body including a core comprising zirconia and a shell overlying at least a portion of the core, wherein the shell comprises silica; an oxidizing agent; and a carrier. The CMP slurry can comprise at least one of a Hydrogen Peroxide Stability %Reduction of not greater than 50%; and a high copper material removal rate.

The invention relates to a chemical polishing bath for polishing a titanium or titanium alloy component, or a part thereof, which chemical polishing bath comprises water, a fluoride complexing agent capable of forming a complex with oxidized titanium at an equivalent fluoride concentration of between 1.40 and 2.80 mol / L, phosphoric acid in a concentration of between 3 and 6 mol / L, together with sulfuric acid in a concentration of between 0.5 and 1.5 mol / L.The bath is particularly well suited to polishing components obtained from additive manufacturing (3D printing).

The disclosure provides a surface polishing method of a perovskite crystal material, comprising: performing hot mounting treatment on a perovskite single crystal to be polished to obtain a perovskite single crystal sample; fixing the perovskite single crystal sample on a polishing table and performing rough polishing on the perovskite single crystal sample; and performing fine polishing on the rough-polished perovskite single crystal sample to obtain a polished perovskite single crystal sample, wherein the process of fine polishing comprises: using artificial leather polishing cloth and performing first drop processing using anhydrous ethanol as a polishing liquid; and after a preset time interval elapses after the first drop processing, replacing the anhydrous ethanol with a suspension of dimethyl sulfoxide and anhydrous ethanol for second drop processing.

The invention discloses an N-region etching structure of a TBC battery, an etching additive and an etching polishing solution. The additive comprises the following components in percentage by mass: 0.5-1% of a selective inhibitor, 0.5-1% of a defoaming agent, 1-1.5% of a dispersing agent, 0.5-1% of a stabilizer and the balance of deionized water, wherein the selective inhibitor is a dimethyl diallyl ammonium chloride-acrylamide copolymer. The additive disclosed by the invention is applied to an N-region selective etching process of a TBC battery, and an included angle between a {111} surface and a {100} surface of a silicon crystal can be changed into a vertical morphology from a traditional 54.7-degree single inclined surface, so that the transverse transmission distance of a hole is obviously shortened, the width of a GAP region can be further reduced, and the effective light receiving area is improved, thereby obviously improving the efficiency.

A chemical mechanical planarization (CMP) composition is provided that provides a tunable high Cu removal rate and a low Cu static etch rate for polishing a wide range of bulk or advanced node copper or silica through vias (TSVs). The CMP composition also provides high selectivity of Cu films over other barrier layers such as Ta, TaN, Ti, TiN, and SiN, and dielectric films such as TEOS, low-k, and ultra low-k films. The CMP composition includes an abrasive, an oxidizer, and at least two chelating agents selected from the group consisting of amino acids, amino acid derivatives, and combinations thereof, and the Cu static etch rate reducer includes, but is not limited to, organic alkyl sulfonic acids with linear or branched alkyl chains, and salts of organic alkyl sulfonic acids.

Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Cleaning and polishing fluids are described. In particular, cleaning and polishing fluids comprising water, a polymer, and a silicate are described. These cleaning and polishing fluids exhibit good performance, in particular when used with a polishing pad during cleaning.

To facilitate handling and reduce hazards to an operator compared to a strong acid polishing liquid.SOLUTION: A polishing liquid for compound semiconductor substrate polishing includes an aqueous solution in which permanganate and a water-soluble compound in which a weak acid and a group 3 element, a lanthanide or a group 4 element are combined are dissolved. Preferably, the pH of the polishing liquid is greater than or equal to 3 and less than or equal to 7. Also preferably, the concentration of permanganate is 2.50 wt% or higher. The concentration of the water-soluble compound is greater than or equal to 0.55 wt% and less than or equal to 5.50 wt%.SELECTED DRAWING: Figure 1

The invention discloses agglomerated abrasive grinding fluid, and belongs to the technical field of agglomerated abrasives, the agglomerated abrasive grinding fluid comprises a box body, a first water sump is arranged in the box body, a second water sump is arranged in the box body, a third water sump is arranged in the box body, the surface of the box body is fixedly connected with a fixing frame, the surface of the fixing frame is fixedly connected with a motor, and the motor is fixedly connected with a motor. According to the supply system applied to the agglomerated abrasive grinding fluid, by arranging a motor, a first chain wheel, a second chain wheel, a second rotating shaft and a cleaning brush, when a filter plate is cleaned, people control the motor to operate through a control switch, and then the first chain wheel and the second chain wheel are driven to rotate; and meanwhile, a second rotating shaft is driven to rotate, the second rotating shaft rotates to drive a cleaning brush to rotate, so that impurities on the surface of the filter plate are cleaned, under the action of a motor, a first chain wheel, a second chain wheel, the second rotating shaft and the cleaning brush, people can clean the impurities on the surface of the filter plate more conveniently, and the filtering effect is prevented from being influenced.

A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the composition has a pH of from about 7 to about 14.

The invention provides an alkaline chemical polishing solution suitable for a high-Si-content aluminum alloy inner runner and a polishing method, and belongs to the technical field of metal material surface treatment. According to the method, an alkaline polishing solution composed of sodium hydroxide, sodium nitrate, thiourea, sodium silicate, sodium phosphate, sodium fluoride, ceric sulfate and an additive is adopted for conducting long-time chemical polishing on the high-silicon aluminum alloy at the room temperature, and dilute acid neutralization, acetic acid activation and sodium oxalate and sodium dodecyl benzene sulfonate composite cleaning solution are matched for ultrasonic dust removal. According to the technology, nitric oxide pollution generated by acid polishing is avoided, the corrosion rate is reduced, effective polishing of a complex inner runner is achieved, the surface roughness is remarkably reduced, material loss is small, hanging dust is completely removed, and the technology has environment friendliness and high-precision machining capacity.

The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates comprising: a solvent; at least one abrasive with a Mohs hardness of at least 8; and at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.

A method of performing a polishing process is provided. The method may include forming spherical titanium dioxide nano-particles, covering the spherical titanium dioxide nano-particles with an organic coating, storing the spherical titanium dioxide nano-particles together with an oxidizer, forming a polishing solution with the spherical titanium dioxide nano-particles, applying the polishing solution on a surface of a work piece, and polishing the surface of the work piece with the polishing solution.

To provide a polishing liquid that enables enhancement of a polishing rate of copper, a polishing method employing the polishing liquid, a method for manufacturing a component employing the polishing method, and a method for manufacturing a semiconductor component employing the polishing method.SOLUTION: A polishing liquid having a pH of 9.00 or more and containing abrasive grains including cerium oxide and an ammonium salt. A polishing method in which a polishing target member containing copper is polished using the polishing liquid. A method for manufacturing a component in which a component is obtained using the polishing target member polished by the polishing method. A method for manufacturing a semiconductor component in which a semiconductor component is obtained using the polishing target member polished by the polishing method.SELECTED DRAWING: None

The application is suitable for the technical field of brightener, and provides a brightener for mirror polishing of zinc alloy workpieces and a preparation and use method thereof.The brightener comprises the following raw materials in percentage by weight: dimethyl silicone oil emulsion 7-9%, isomeric alcohol polyoxyethylene ether 6-10%, polydiethylene glycol-600 (PEG-600) 3-7%, fatty alcohol polyoxyethylene ether-9 (AEO-9) 4-8%, triethanolamine 1-3%, citric acid monohydrate 1-2%, isothiazolinone preservative 0.05-0.1%, and deionized water, and the rest is supplemented to 100%. Through precise synergy of specific components and concentrations and combined with a unique thermal activation process, the application aims to achieve a "mirror polishing" effect with glossiness ≥95Gs (60°), smooth hand feeling, and first-time qualified rate ≥95%, and meanwhile, the application has the advantages of stable formula, wide process window, and easy scale production.

The invention relates to the field of battery piece back face polishing, in particular to a polishing solution for a back face tower footing of a TOPcon battery and a preparation technology, and the polishing solution comprises hydroxide, an auxiliary additive and water; wherein the auxiliary additives comprise a nonionic surfactant, an ionic buffering agent, an alcohol stabilizing agent, an antioxidant and an ultrasonic resonance polymer; in the preparation process, a corresponding polishing solution is adopted for polishing. The polishing solution has the beneficial effects that the polishing effect is improved and the polishing time is shortened on the basis of reducing the fragment rate.

The present invention relates to a method of polishing and brightening a workpiece of copper or copper alloy. The method of the invention is especially useful in workpieces having a complex structure such as those produced by the additive manufacturing of metals.

The invention relates to the technical field of alkali polishing additives, in particular to an alkali polishing additive for producing a polyfinger battery piece and a preparation method of the alkali polishing additive. The alkali polishing additive for producing the polyfinger battery piece comprises the following substances in parts by weight: 5-10 parts of a selective adsorbent; 1-5 parts of a surfactant; 1-5 parts of a stabilizer; 60 to 80 parts of deionized water; the selective adsorbent is a natural organic compound with a silicon wafer 100-surface selective adsorption function. The basic formula composition of the polyfinger cell alkali polishing additive is limited, and a natural organic compound with a silicon wafer 100-surface selective adsorption function is used as a selective adsorbent. According to the technical scheme, through directional adsorption of the natural organic compound to the 100 surface of the silicon wafer, differential corrosion of alkali liquor to different crystal faces can be enhanced, formation of protrusions with smooth surfaces on the 100 surface is promoted, the protrusions do not affect the subsequent passivation effect, meanwhile, the protrusions can improve the contact performance with battery slurry, the series resistance is reduced, and the filling factor is improved.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The present invention discloses a nitrogen-free polishing method for crystalline silicon solar cell wafers and a polishing liquid thereof, wherein the polishing liquid comprises a fluoride ion source, a chloride-containing ion source, an oxidant, and deionized water. A diffused SE single crystal silicon wafer is placed in the polishing liquid, etched at a temperature of 8°C to 40°C for 30s to 240s, and the velvet surface of the SE single crystal silicon wafer is etched and polished, so that the upper part of the pyramid morphology structure is removed, leaving the pyramid base. Compared with the alkali polishing process, the polishing method provided by the present invention is simple and stable, compatible with the current production line etching process, does not require new polishing equipment, has good etching, polishing, and smoothing effects, can smooth the top and bottom of the pyramid and passivate the tetrahedral plane, and has controllable reflectivity. In addition, the polishing liquid used has a reasonable formula, does not contain nitrogen, has low waste liquid treatment cost, has little environmental pressure, and has low cost and easy availability of raw chemical liquid, which reduces production costs while also reducing pollution to the environment.

A method for manufacturing an article storage container according to the present invention is a method for manufacturing an article storage container including a first unit for fixing an article, a second unit for covering the first unit, and a connection unit for making the second unit pivot from the first unit. The method comprises: a molding step of molding the first unit, the second unit, and the connection unit; a surface polishing step of polishing the surfaces of the molded first unit, second unit, and connection unit; and an assembly step of assembling the components of the first unit, the second unit, and the connection unit, wherein wet polishing or both the wet polishing and dry polishing are used in the step of polishing the surfaces.

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate. In some examples, linear motion may be used for chemically planarizing.

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water-based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron-containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.