43results about How to "High polishing removal rate" patented technology

A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

The invention relates to a chemical mechanical polishing aqueous composite and a chemical mechanical polishing process of a titanium substrate. The chemical mechanical polishing aqueous composite comprises: 1-20wt%, preferably 4-6wt% of abrasive material, 0.5-10wt%, preferably 0.9-3wt% of oxidant, 0.01-10wt%, preferably 0.1-2wt% complexing agent, and 0.1-10wt%, preferably 1-5wt% corrosion-inhibition film forming agent, wherein a pH value of the chemical mechanical polishing aqueous composite is 1.0-7.0, preferably 1.5-4.0. The chemical mechanical polishing aqueous composite disclosed by the invention can be effectively applied to a chemical mechanical polishing process of the titanium substrate so as to be capable of effectively obtaining a polished titanium metal layer with high polishing speed and high surface quality.

The invention relates to a method for preparing a ceria / monox compounded abrasive, and application of the compounded abrasive. The method uses monodisperse spherical monox as a kernel of a coating type compounded abrasive, hexamethylenetetramine (HMT) as a precipitator and cerium salt as a raw material, and adopts an even precipitation method process to synthesize the ceria / monox compounded abrasive. Through the optimization of process parameters, such as the use amount ratio of monox master particles to the cerium salt, the molar ratio of the HMT to the cerium salt, and reaction and calcination temperature, the method controls the covering amount, the shape and the distribution state of ceria particles on the surface of the monox, thereby preparing the ceria / monox compounded abrasive of which the nanometer-level ceria particles evenly cover on the surface of the monox and which has good monodispersity; the method does not need complex equipment; and the needed chemical materials haveless varieties, cheap prices and good experiment repeatability. The ceria / monox compounded abrasive is prepared into polishing slurry for chemical mechanical polishing of a gallium arsenide chip so as to obtain the polishing surface with the roughness in sub-nanometer magnitude and further improve polishing speed, reduce polishing pass and improve efficiency.

The invention discloses a method for preparing a silicon-aluminum composite polishing powder, which comprises the following steps: (1) using an ammonium bicarbonate solution and an ammonium aluminum sulfate solution to stir and react to prepare an alumina precursor solution; (2) stirring at a high speed to Add tetraethyl orthosilicate dropwise to the aluminum oxide precursor solution, and age after stirring to obtain an aging solution; (3) filter the aging solution, collect the filter residue and dry and pulverize it to obtain a silicon-aluminum composite precursor; (4 ) mix the precursor of the silicon-aluminum composite with the calcination accelerator and then calcinate to obtain the silicon-aluminum composite; (5) the silicon-aluminum composite is washed with water, ball milled, classified by water flow, and spray-dried to obtain the silicon-aluminum composite polishing powder. SiO in the silicon-aluminum composite polishing powder that preparation method of the present invention obtains 2 with Al 2 o 3 Through chemical bonding, it has the advantages of high polishing removal rate, good polishing stability, high polishing rate (up to 8.5-9.5um / h), and can also improve the polishing yield.

An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.