43results about How to "High polishing removal rate" patented technology

The invention relates to a method for preparing a ceria/monox compounded abrasive, and application of the compounded abrasive. The method uses monodisperse spherical monox as a kernel of a coating type compounded abrasive, hexamethylenetetramine (HMT) as a precipitator and cerium salt as a raw material, and adopts an even precipitation method process to synthesize the ceria/monox compounded abrasive. Through the optimization of process parameters, such as the use amount ratio of monox master particles to the cerium salt, the molar ratio of the HMT to the cerium salt, and reaction and calcination temperature, the method controls the covering amount, the shape and the distribution state of ceria particles on the surface of the monox, thereby preparing the ceria/monox compounded abrasive of which the nanometer-level ceria particles evenly cover on the surface of the monox and which has good monodispersity; the method does not need complex equipment; and the needed chemical materials have less varieties, cheap prices and good experiment repeatability. The ceria/monox compounded abrasive is prepared into polishing slurry for chemical mechanical polishing of a gallium arsenide chip so as to obtain the polishing surface with the roughness in sub-nanometer magnitude and further improve polishing speed, reduce polishing pass and improve efficiency.

The invention relates to a barium titanate chemico-mechanical polishing aqueous composition and its application. Specifically, the barium titanate chemico-mechanical polishing aqueous composition comprises: 1-20 wt%, preferably 8-15 wt% of an abrasive; 0.5-10 wt%, preferably 1-3 wt% of a complexing agent; and 0.01-5 wt%, preferably 0.1-1 wt% of a surface adsorbent, wherein the barium titanate chemico-mechanical polishing aqueous composition has a pH value of 8.0-12.0, preferably 10.0-11.5. The barium titanate chemico-mechanical polishing aqueous composition provided in the invention can be effectively applied to a barium titanate substrate chemico-mechanical polishing process, thereby being able to effectively obtain a polished barium titanate layer with a high polishing rate and high surface quality.

The invention relates to a CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for an alkaline sapphire substrate and a preparation method thereof. The CMP polishing liquid consists of the following components in percentage by weight: 0.5-35% of a main grinding material, 0.015-0.09% of an auxiliary grinding material, 0.005-0.05% of a chelating agent, 0.005-0.05% of a surfactant, 0.01-0.5% of a pH adjustor, and the balance of deionized water, wherein the main grinding material is a nano SiO2 sol and the auxiliary grinding material is an Al2O3 sol. The auxiliary grinding material, the chelating agent, the surfactant and the alkaline pH adjustor are sequentially added into a nanosilicon sol suspension. In the polishing liquid, as the content of the main grinding material SiO2 sol is reduced, the phenomenon that the polishing liquid residue on the surface of the substrate after CMP is relatively severe is reduced to facilitate subsequent cleaning. A less amount of the auxiliary grinding material Al2O3 is added, so that the polishing speed is remarkably increased, and the roughness of the substrate after CMP is reduced.

The invention discloses a polishing composition for hard disk substrates, belonging to the technical field of manufacturing memory hard disks of a computer. A polishing composition for the hard disk substrates includes grinding materials and water, and further includes a polishing accelerating agent and a lubricating agent, the contents thereof based on weight percent are as below: the grinding materials: 0.5-20%, the polishing accelerating agent:0.01-10%; the lubricating agent: 0.00001-5%, the rest is water. The polishing composition further includes a pH regulator. The pH value of the polishing composition is 0.5-5. The polishing composition provided by the invention is mainly suitable for the polishing process in manufacturing the hard disk substrates, and has the characteristic of high polishing removal rate, the polished disk substrate is less in scratches on the surface and free from recesses, protrusions and the like, as well as has smooth surface and the average surface roughness that can reach 3 angstroms or below.

The invention relates to a polishing composition, and preparation and polishing methods thereof, belongs to the technical field of microelectronic manufacturing and especially relates to the technical field of ultra-precision machining of ultra-hard materials. The polishing composition comprises polishing particles, an oxidizing agent, a photo-catalyst, a corrosive agent, a polishing stabilizer and water according to the ratio of 10-30 wt% of the polishing particles, 0.5-15 wt% of the oxidizing agent, 0.01-10 wt% of the corrosive agent, 0.001-5 wt% of the photo-catalyst, 0.1-10 wt% of the polishing stabilizer and the balanced being water. The polishing composition containing the photo-catalyst is used for polishing a silicon carbide wafer under irradiation of ultraviolet light. The polishing composition significantly increases removal rate and has good cyclic polishing stability. The polished silicon carbide wafer has a super-smooth surface, has no surface defects such as scratches, pits and the like, is low in surface roughness, and can present clear and regular atom step morphology.

The invention relates to a chemical mechanical polishing aqueous composite and a chemical mechanical polishing process of a titanium substrate. The chemical mechanical polishing aqueous composite comprises: 1-20wt%, preferably 4-6wt% of abrasive material, 0.5-10wt%, preferably 0.9-3wt% of oxidant, 0.01-10wt%, preferably 0.1-2wt% complexing agent, and 0.1-10wt%, preferably 1-5wt% corrosion-inhibition film forming agent, wherein a pH value of the chemical mechanical polishing aqueous composite is 1.0-7.0, preferably 1.5-4.0. The chemical mechanical polishing aqueous composite disclosed by the invention can be effectively applied to a chemical mechanical polishing process of the titanium substrate so as to be capable of effectively obtaining a polished titanium metal layer with high polishing speed and high surface quality.

A preparation method and an application of a nano-semiconductor photocatalyst. The invention relates to the nano-semiconductor photocatalyst used for surface planarization, and the preparation method and the application thereof. In the method, with toxic-free and low-cost precursor raw materials, nano-semiconductor particles, which have uniform particle size and good stability, are synthesized through a simple thermal injection method. The nano-semiconductor photocatalyst has wide application in the surface planarization.

The invention discloses a method for manufacturing a porous polishing and grinding tool. The method mainly comprises the following steps of: performing ultrasonic oscillation on ethanol, micro-powder diamond and sodium dodecyl benzene sulfonate to obtain a suspension; placing a foaming nickel sheet as an anode and a nickel sheet as a cathode in the suspension, performing electrophoretic deposition for 1 to 10 minutes, and drying the foaming nickel on which the diamond micro-powde is deposited for 10 minutes at 70 DEG C; suspending the foaming nickel in chemical nickel plating liquid, 3 to 5 hours later, cleaning the foaming nickel sheet, drying the foaming nickel sheet in vacuum, annealing the foaming nickel sheet at 250 to 300 DEG C for 2 to 4 hours to eliminate stress, wherein the increased weight of the nickel layer is up to 80 to 100 percent; and repeating the processes of electrophoretic deposition, chemical nickel plating and annealing for 4 to 10 times, so that the increased weight of the nickel layer is up to 300 to 800 percent. The polishing and grinding tool manufactured by the method is uniform and controllable in porosity, and the probability of manufacturing the polishing and grinding tool with big pores and high porosity is provided; and a grinding material is uniformly distributed, so the utilization rate of the grinding material in a polishing and grinding process is improved.

The invention discloses a chemical-mechanical polishing solution used for polishing barrier layers. The polishing solution comprises abrasive particles, oxysalt, a complexing agent, an organic dispersing agent, a corrosion inhibitor, a pH conditioning agent and deionized water. The polishing solution is characterized in that: the polishing solution has adjustable TEOS and Cu polishing speeds under a low cerium oxide solid content, and the polishing solution shows high Ta and Ti polishing and removing speeds especially under the synergistic effect of the oxysalt.

The present invention provides a polishing composition for use in polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing composition comprises an alumina abrasive and water. The alumina abrasive has an isoelectric point that is below 8.0 and is lower than the pH of the polishing composition.

The invention discloses a polishing liquid for a sapphire substrate. The polishing liquid is composed of the following components, by weight: 50-70 parts of deionized water, 20-40 parts of nano-grade silica hydrosol, 4-6 parts of graphene microchip, 4-6 parts of an active agent, 3-5 parts of stearic acid, 3-5 parts of glycol, 0.1-0.3 parts of tungstate, 1-2 parts of theophylline, 1.5-2.5 parts of flatting micro-powder wax, 4-6 parts of nano-grade titanium carbide, 1.5-2.5 parts of epoxy soybean oil, 2-4 parts of diphenyl silandiol, 2-4 parts of potassium phosphotungstic, 1-2 parts of methyl methacrylate, 0.4-0.6 parts of ethylenediamine, 0.4-0.6 parts of malonic acid, and 0.2-0.5 parts of polyvinylpyrrolidone. According to the polishing liquid, graphene microchips are added into a traditional silica sol, such that polishing removing rate can be effectively improved, and polishing liquid pH stability is ensured. With the polishing liquid, technical problems of low polishing rate and low efficiency of traditional polishing liquids are solved, and the polishing liquid is more environment-friendly.

Polishing materials suitable for polishing hard surfaces, media including the polishing material, and methods of forming and using the polishing materials and media are disclosed. Exemplary polishing materials have a relatively high hard segments:soft segments ratio and exhibit relatively high removal rates and/or relatively high process yields.

The present invention provides a means capable of polishing an object to be polished at a high polishing removal rate and further improving a surface quality of a surface of the object to be polished.

The present invention is a polishing composition used for polishing an object to be polished, containing an alumina abrasive and a dispersion medium, in which the alumina abrasive contain only an α-alumina A having an α conversion rate of 80% or more and an α-alumina B having an α conversion rate of less than 80% as crystalline alumina, and an average particle size of the α-alumina A is smaller than an average particle size of the α-alumina B.

The invention relates to the technical field of ultra-precision machining, in particular to a polishing device and method for a variable-stiffness grinding wheel assisted by magneto-rheological jet flow. The polishing device comprises a bottom plate, a sliding guide rail module, a first bearing seat, a guide wheel, a first iron core, a first coil, a workpiece, an iron core support, a second bearing seat base, a second bearing seat, a magneto-rheological elastomer grinding wheel embedded with abrasive particles, a guide pipe, a magneto-rheological polishing solution storage box, a coupler, a motor, a motor support, a second coil, a second iron core, a base, a bolt, a workpiece support, a first shaft, a second shaft, a pump, a nozzle, a pressure sensor and a third coil. Mechanical polishing and magneto-rheological polishing liquid jet flow polishing for controlling the rigidity of the magneto-rheological elastomer grinding wheel embedded with the abrasive particles through the magnetic field are carried out at the same time, and good surface machining quality and machining efficiency are achieved.

The invention discloses a chemical-mechanical polishing aqueous composition and a chemical-mechanical polishing process method of an integrated circuit silver interconnecting sliver layer, wherein the chemical-mechanical polishing aqueous composition comprises the following components in percentage by weight: 1%-20%, preferably 4%-8% of abrasive materials, 0.1%-10%, preferably 0.5%-5% of complexing agent, and 0.1%-10%, preferably 1%-3% of lubricating agent, wherein the pH value of the chemical-mechanical polishing aqueous composition is 8.0-11.0, preferably 9.5-10.5. The chemical-mechanical polishing aqueous composition can be effectively applied to the chemical-mechanical polishing process of the integrated circuit silver interconnecting sliver layer and can be used for effectively realizing high-flatness high-speed initial polishing and optimizing the low-speed final polishing of surface crudeness, so that a nanometer-level polishing sliver layer surface with extremely low surface defects can be obtained.