92 results about "Sapphire wafer" patented technology

The invention discloses a preparation method of a micro coaxial transmission line with sapphire as an inner conductor supporting layer. The preparation method comprises the following steps: forming the sapphire inner conductor supporting layer on the surface of a first sapphire wafer through laser processing; forming a first inner conductor layer and a first outer conductor layer on the sapphire inner conductor supporting layer, and forming a first top cover layer on the first outer conductor layer; bonding the second wafer with the first top cover layer, and thinning the first sapphire wafer until the sapphire inner conductor supporting layer is exposed; forming a second inner conductor layer and a second outer conductor layer on one side, far away from the second wafer, of the sapphire inner conductor supporting layer, and forming a second top cover layer on the second outer conductor layer; and removing the first sacrificial layer, the second sacrificial layer and the second wafer to form the micro coaxial transmission line. According to the invention, the sapphire wafer is used as the preparation substrate, and the sapphire inner conductor supporting layer is directly formed on the sapphire wafer, so that the inner conductor supporting layer is ensured to be firmer and not easy to deform, and the preparation efficiency of the micro coaxial transmission line is improved.

The utility model relates to the technical field of sapphire wafer scratch resistance testing, in particular to a device for sapphire wafer scratch resistance testing. The device for testing the scratch resistance of the sapphire wafer comprises a base, a supporting plate, a guide rail, a connecting block, a pull rod, a measuring rod, a measuring assembly and a balancing weight. The supporting plate is fixed on the base; the guide rail is fixed on the supporting plate; the connecting block is slidably arranged on the guide rail; the pull rod is fixedly connected to one side of the connecting block; the measuring rod penetrates through the connecting block and is not fixedly connected with the connecting block; the measuring assembly is in threaded connection with the measuring rod; and the balancing weight is sleeved on the measuring rod. The measuring rod is sleeved with one or more balancing weights, the pull rod is moved to drive the connecting block, the measuring rod and the measuring assembly to move, the scratch resistance of the sapphire wafer can be effectively measured, and the test is not limited by the shape of the sapphire wafer. In addition, the device is simple in structure, convenient to operate, low in testing cost, convenient to move and not limited by use sites.

The invention belongs to the technical field of micro-nano machining, and discloses a sapphire laser implicit cutting method and system based on femtosecond laser induced micro holes. The sapphire wafer is fixed on the object carrying moving unit, the femtosecond laser is used for emitting femtosecond laser, the femtosecond laser sequentially passes through the polarization rotating mirror, the first reflecting mirror and the objective lens and then is focused in the sapphire wafer, a micro-hole array is induced to grow in the sapphire wafer, the micro-hole array serves as a modification layer, and the modification layer is used for modifying the sapphire wafer. Carrying out femtosecond laser scanning by combining with a loading moving unit, and processing to obtain a plurality of modified layers; and applying an external force to separate the sapphire wafer after laser modification. According to the invention, the implicit cutting efficiency can be improved, and the fracture surface with lower roughness can be obtained.

The invention relates to a sapphire wafer back surface roughening method, which is based on a planetary double-sided grinding machine platform, and comprises the following steps: firstly, bonding the front surface of a low-TTV sapphire wafer subjected to double-sided accurate grinding and polishing to the surface of a ceramic plate, then fixing the ceramic plate on a wandering star wheel, then placing the wandering star wheel on a lower grinding plate, and grinding the sapphire wafer back surface with the lower grinding plate; wherein the back surface of the wafer faces the lower grinding disc; the upper grinding disc is forbidden, a sun gear and inner gear transmission mechanism is utilized, the wandering star wheel rotates on the lower grinding disc to form a precise grinding interface, and roughening of the back face of the sapphire wafer is achieved by regulating and controlling the rotating speed of the sun gear, the inner gear and the wandering star wheel. According to the method, on one hand, wafer thickness uniformity and parallelism control is achieved through the double-face polishing technology, on the other hand, low TTV control over the obtained single polished wafer is achieved in the roughening process through combination of equipment design and technology innovation, and the method is suitable for the 8-12-inch sapphire wafer and can be applied to the fields needing high-precision thickness control such as LED or semiconductor manufacturing.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

The invention discloses a surface processing method of an irregular large-size tellurium-zinc-cadmium substrate slice. The surface processing method comprises the following steps: S1, cleaning an irregular large-size tellurium-zinc-cadmium wafer with an A surface and a B surface; s2, using a sapphire wafer as a substrate; s3, waxing and pasting are carried out, so that the tellurium-zinc-cadmium wafer and the sapphire wafer are attached and fixedly bonded together; s4, single-side thinning is conducted through a thinning machine, specifically, S41, the tellurium-zinc-cadmium wafer and the sapphire wafer which are attached, bonded and fixed together are placed on a workbench of the thinning machine, the inclination angle of the end face of a grinding wheel relative to the workbench is 0.0057 degrees, and S42, multi-step machining is conducted through the grinding wheel; s5, CMP polishing is conducted through a single polishing machine; s6, waxing: taking down the tellurium-zinc-cadmium wafer and the sapphire wafer from the single polishing machine, and removing white paraffin between the A surface of the tellurium-zinc-cadmium wafer and the sapphire wafer; and S7, the step S1 to the step S6 are repeated, surface processing is conducted on the A face of the tellurium-zinc-cadmium wafer, and finally the tellurium-zinc-cadmium wafer with TTV smaller than or equal to 2 micrometers and Ra smaller than or equal to 1 nm is obtained.

The utility model provides a wafer impact resistance detection device which comprises a base, a detection table for placing a sapphire wafer is arranged on the top surface of the base, the sapphire wafer is arranged on the top surface of the detection table, an adjusting mechanism is arranged on the edge of the top surface of the base, and a detection mechanism for detecting the sapphire wafer is arranged in the middle of the adjusting mechanism. The bottom end of the detection mechanism is provided with an impact assembly for impacting the sapphire wafer; a supporting seat is arranged on the top face of the base, a first motor is arranged in the supporting seat, and a fixing seat is arranged on the edge of the top face of the base and fixedly connected with the bottom end of the adjusting mechanism. According to the utility model, the detection mechanism is controlled by the adjusting mechanism to rotate by taking the detection table as a point and is matched with the detection table to drive the sapphire wafer to rotate, so that each part of the sapphire wafer can be subjected to impact test in multiple directions in the process of detecting the sapphire wafer by the detection mechanism; and therefore, the impact resistance of the sapphire wafer can be more comprehensively tested by the detection device.

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a wafer cutting method. The wafer cutting method provided by the invention comprises the following steps: (1) bonding a hard mask A on the front surface of a wafer to be cut, and bonding a hard mask B on the back surface of the wafer to be cut; cutting channels are etched on the hard mask A and the hard mask B; the hard mask A and the hard mask B independently comprise at least one of a quartz wafer and a sapphire wafer; and (2) etching the wafer to be cut through the cutting channel, and removing the hard mask A and the hard mask B to obtain a cut bare core. The cutting method provided by the invention can effectively solve the problems that the time for growing the thick mask on the current wafer is long and the thick mask is difficult to grow, and meanwhile, the wafer cutting efficiency is improved.

The invention discloses a sapphire wafer taking device and a sapphire wafer taking method, belongs to the technical field of sapphire wafer transfer, and aims to solve the problems that when an air bag is used for taking out ground sapphire wafers one by one in the prior art, the appearances of the wafers are easily abraded, the appearances of products are easily poor, and the taking-out efficiency is poor. The chip taking device comprises a chip taking plate, a mechanical valve, a plurality of air passing pipes and a plurality of adsorption unit sets, the mechanical valve is arranged at the top of the chip taking plate, a plurality of annular air channels are machined in the chip taking plate and sequentially arranged in a sleeving mode from the center of the chip taking plate to the edge of the chip taking plate, and the ventilation end of the mechanical valve communicates with the annular air channels through the air passing pipes; the multiple adsorption unit sets are all installed at the bottom of the sheet taking plate, each adsorption unit set corresponds to one or two annular air channels, and the ventilation end of each adsorption unit set communicates with the corresponding annular air channel. The sapphire wafer taking and transferring device is mainly used for taking and transferring sapphire wafers.

The embodiment of the present disclosure provides a light emitting diode chip, a preparation method thereof and a display device, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: forming a connection electrode layer on each light emitting unit, and the first connection electrode on each light emitting unit points to the second connection electrode along a first direction, the included angle between the first direction and the flat side is 30-60 degrees, and the first direction is the length direction of the rectangular projection; or the first connection electrode on a part of the light emitting units points to the second connection electrode along a second direction, the second direction is the length direction of the rectangular projection, and the first connection electrode on another part of the light emitting units points to the second connection electrode along a third direction, and the third direction is opposite to the second direction; and the sapphire wafer is cracked along the cutting path to obtain a plurality of light emitting diode chips. The embodiment of the present disclosure can make the light emitting pattern of the LED chip or the light pattern of the display device using the LED chip more symmetrical.

The utility model provides a tool beneficial for manually measuring the thickness of a sapphire wafer, and the tool comprises a supporting bottom foot which is used for supporting the tool; the multiple supporting bottom feet are installed at the bottom of the tool table and arranged in a triangular mode so that the stability of the tool table can be improved; the clamping groove is formed in the tool table; according to the tool beneficial to manually measuring the wafer thickness through the sapphire, the multiple supporting bottom feet are arranged on the tool table, the multiple supporting bottom feet are arranged on the tool table in the shape of the isosceles triangle, the stability of the tool table is improved, the working efficiency is improved, and the working efficiency is improved. Meanwhile, the clamping groove is formed in the tool table, and the dial indicator is arranged in the clamping groove in a sliding mode, so that the dial indicator can measure any point position of the wafer, an operator can use the dial indicator conveniently, the thickness of the wafer can be measured more accurately, and the working efficiency is improved.

The invention relates to agglomerated diamond powder and a preparation method thereof, and the agglomerated diamond powder comprises the following components in percentage by weight: 40-60% of diamond micro-powder with the particle size of 1.5-5 microns and 40-60% of a ceramic bond, the ceramic bonding agent is prepared from the following components in percentage by weight: 35 to 42 percent of B2O3, 15 to 20 percent of Al2O3, 15 to 20 percent of SiO2, 6 to 8 percent of alkaline activating agent, 1 to 3 percent of rare earth oxide, 6 to 7 percent of Si, 1 to 3 percent of TiC, 2 to 3 percent of MnO and 3 to 4 percent of Cr2O3; 1%-2% of CeO2 and 0.5%-1% of V2O5. It can be known from the table 4 that a grinding wheel prepared from the agglomerated diamond powder prepared through the method has good grinding performance, the bending strength ranges from 55 MPa to 60 MPa, the Vickers hardness ranges from 67 HRB to 75 HRB, and the grinding ratio ranges from 736 to 789. The agglomerated diamond powder disclosed by the invention can be used for diamond grinding liquid, and is matched with grinding leather to process hard and brittle materials such as sapphire wafers, silicon carbide wafers and functional ceramics; and the cutting fluid is matched with cutting fluid to process hard and brittle materials such as glass ceramic cover plates, sapphire wafers and silicon carbide wafers.

The utility model relates to a sapphire grinding device and a wandering star wheel thereof.The wandering star wheel comprises a wheel disc body and wheel teeth formed on the outer circumferential face of the wheel disc body, the wandering star wheel is used for being placed on a lower grinding disc of the sapphire grinding device, and the wheel teeth are used for being meshed with a sun gear of the sapphire grinding device and a gear ring located on the outer side of the sun gear; a plurality of through holes extending in the axial direction of the wheel disc body are formed in the wheel disc body, each through hole is used for allowing a sapphire wafer to be embedded so as to fix the sapphire wafer, the through holes comprise the first through holes and the second through holes, the first through holes are formed in the circumferential direction of the wheel disc body at intervals, and the second through holes are formed in the circumferential direction of the wheel disc body at intervals. The multiple second through holes are located in the inner sides of the multiple first through holes and arranged at intervals in the circumferential direction of the wheel disc body, and the minimum distance between the hole wall of each first through hole and the outer circumferential face of the wheel disc body is 9.30 mm to 9.34 mm. The wandering star wheel can fix more sapphire wafers, so that the grinding processing efficiency of the sapphire grinding device is improved.

The invention relates to the technical field of display screen preparation, in particular to a high-yield thermal compression welding method based on a direct laser mass transfer process, which comprises the following steps: pasting a resin bearing adhesive film on a TFT (Thin Film Transistor) back plate, presetting a metal welding spot on a Micro-LED (Light Emitting Diode) chip, transferring the Micro-LED chip from a sapphire substrate to the resin bearing adhesive film of the TFT back plate by using the laser mass transfer process, iCP etching is carried out, a flexible lamination is arranged on one side of the sapphire pressing sheet and is aligned with the Micro-LED chip, and a graphite sheet is arranged on one side, far away from the Micro-LED chip, of the TFT backboard; and after welding is finished, cooling is conducted to the room temperature, soaking is conducted, and the Micro-LED display screen is obtained. By the adoption of the steps, the problems that in the prior art, a Micro-LED chip deviates, residues are left after welding, and welding fails due to warping of a back plate are solved, and therefore the high-yield Micro-LED display screen is obtained.

The invention discloses a quartz wafer dynamic reversing cleaning basket device and a cleaning method, and belongs to the technical field of semiconductor cleaning equipment. The device comprises a cleaning basket, a movable upper cover and a deflection structure. The basket frame of the cleaning basket is provided with multiple sets of vertical clamping grooves used for bearing the wafer clamping plates, the movable upper cover is provided with corresponding transverse clamping grooves for restraining the upper edges of the wafer clamping plates, and an up-down restraining installation mode is formed. The deflection structure is arranged at the end of the basket, when the cleaning basket moves up and down in cleaning liquid, the deflection structure responds to the up-down movement, the reversing rod rotates through the guide slope mechanism, the eccentric head is driven to drive the movable upper cover to do horizontal reciprocating motion, and therefore the inclination angle of the wafer clamping plate is periodically changed, and dynamic reversing cleaning is achieved. The device adopts a pure mechanical design, has a self-adaptive adjusting mechanism, can automatically match the reversing frequency according to the cleaning intensity, and is particularly suitable for high-quality cleaning of semiconductor substrates such as quartz wafers, silicon wafers and sapphire wafers.

The application discloses a copper-based alloy single crystal wafer preparation method based on surface energy regulation. The method comprises the following steps: S1, depositing a high surface energy metal film on a copper-plated surface in a Cu(111) / sapphire single crystal wafer, wherein the high surface energy metal is a metal with a surface energy greater than that of copper; S2, re-depositing a copper film on the surface of the high surface energy metal film in the high surface energy metal / Cu(111) / sapphire wafer obtained in the step S1; and S3, placing the copper / high surface energy metal / Cu(111) / sapphire wafer obtained in the step S2 in a chemical vapor deposition reaction chamber and performing annealing recrystallization. The Cu(111) single crystal wafer with a relatively mature process is used as a template, so that the in-plane twin problem existing in the direct single crystallization process of the existing copper-based alloy wafer can be effectively solved. Meanwhile, through the surface energy regulation strategy, the solid-state dewetting phenomenon of the high surface energy metal layer can be successfully inhibited, so that the controllable preparation of the ultra-flat copper-based alloy single crystal metal wafer can be realized.

The embodiment of the application discloses a substrate integrated waveguide passive microwave element based on a sapphire substrate and a processing method and a processing device thereof. The processing method comprises the following steps: etching a sapphire wafer substrate by using a metal-assisted etching method and forming a through hole, depositing metal on the surface of the sapphire wafer and the side wall of the hexagonal through hole, and patterning the metal on the wafer surface by using a photoetching and etching process. The processing device comprises a semiconductor device for metal-assisted etching. The passive microwave element comprises a substrate integrated waveguide filter design matched with the processing method. By using the processing method, the manufacturing cost of the large-size via of the sapphire wafer is greatly reduced, so that after the wafer is divided into a plurality of independent microwave elements, the yield of the elements is greatly improved, and the manufacturing cost of the elements is reduced, which is significantly superior to the traditional laser drilling or mechanical drilling.

The invention discloses a wafer polishing device and a wafer polishing process, which are characterized in that a temperature field auxiliary polishing device which is adjustable in temperature, large in temperature control range and high in accuracy is manufactured by structurally arranging a carrying disc, a heating element, a heat insulation device, a temperature control device and other parts. The synergistic effect of hard abrasive mechanical cutting and active abrasive chemical corrosion can be promoted, efficient material removal and improvement of the surface machining quality are achieved, and an efficient method is provided for sapphire wafer machining.

The utility model discloses a full-automatic chamfering machine for sapphire wafer plane processing, which comprises a working table, a support frame arranged on the working table, a moving component arranged on the support frame, a chamfering component arranged below the moving component, a clamping component arranged on the working table, a first fixing plate fixedly arranged on the top of the working table, and a second fixing plate fixedly arranged on the top of the working table. The second fixing plate is arranged at the top of the first fixing plate and is detachably clamped with the first fixing plate; placing grooves are formed in the opposite sides of the first fixing plate and the second fixing plate in a linear array manner; the third fixing plate is detachably arranged on the workbench, the fourth fixing plate is detachably arranged on the side face of the second fixing plate, and the fourth fixing plate is arranged at the top of the third fixing plate and detachably connected with the third fixing plate in a clamped mode. Fixing grooves are formed in the opposite sides of the third fixing plate and the fourth fixing plate in a linear array mode. And the fixing groove corresponds to the placing groove. According to the utility model, a plurality of wafers can be fixed and chamfered, and the chamfering efficiency is improved.

The invention discloses a cleaning process for sapphire optical wafer processing, and relates to the field of optical wafer precision processing. The invention provides a scheme for removing grinding materials, organic smudginess and impurity metals on the surface of a sapphire wafer aiming at final cleaning after sapphire optical wafer processing; the cleaning process comprises the step of preparing the sapphire wafer cleaning agent based on poly (acrylic acid-co-glycidyl methacrylate) grafted lauryl succinic acid comb-shaped macromolecules. The preparation method comprises the following steps: firstly, preparing a double-effect monomer with a dodecyl oleophylic chain and a dicarboxyl complexing group at the same time; and carrying out copolymerization on the monomer, acrylic acid and glycidyl methacrylate in a water phase to form the amphiphilic double-complexing high-molecular cleaning agent with a comb-shaped structure. The water-based cleaning agent can replace an original flammable organic solvent and strong alkali cleaning step, efficient cleaning is achieved under the mild condition close to neutral, the process is simplified, safety is improved, and the precise surface of a wafer can be protected against damage.

The utility model relates to the technical field of sapphire wafer processing, discloses a sapphire wafer surface cleaning mechanism, and solves the problem that an existing sapphire wafer surface cleaning mechanism is not thorough in cleaning. According to the sapphire surface cleaning device, the surface of sapphire can be cleaned conveniently through the cleaning assembly and the supporting column, when the sapphire surface cleaning device is used, a water inlet pipe inputs water flow into an inserting hole, the water flow enters an inserting pipe through the inserting hole, the inserting pipe inputs the water flow into a rotating disc, the rotating disc sprays water out through a spraying head, and meanwhile a second motor drives a gear to rotate; and the gear drives the turntable to rotate through the teeth, so that the spray head rotates when washing the sapphire wafer, the sapphire surface can be washed more uniformly, and residues on the surface can be prevented.

The invention relates to a method for improving the cleaning quality, in particular to a method for improving the cleaning quality of a sapphire wafer. The invention aims to solve the problems that the end face of a wafer tray jumps and the cleaning quality is reduced due to machining or assembly tolerance of the conventional wafer rotary cleaning machine. The sapphire wafer cleaning quality can be improved, namely, the end jump amplitude of the split type tray is greatly reduced, the defect that end jump balance cannot be guaranteed in the design of an original cleaning machine can be overcome, if end jump abnormity occurs in the cleaning process, adjustment can be achieved through shutdown, convenience and rapidness are achieved, and fluctuation of the wafer cleaning yield caused by the too high end jump value is relieved; the end jump amplitude is reduced, so that the contact pressure between the brush roller and the wafer is more uniform in the cleaning process, the fitting degree of the brush head and the wafer is higher in the whole cleaning time, and the cleaning quality is guaranteed; on the other hand, abrasion of the brush roll is reduced, the service life is prolonged, and cleaning cost is reduced. The invention belongs to the technical field of sapphire wafer cleaning.

The invention relates to an infrared optical window processing method in the technical field of infrared optical windows. The infrared optical window processing method comprises the following steps: preparing a sapphire material; laser cutting is adopted to assist liquid nitrogen injection to cut the sapphire material, liquid nitrogen covers a cutting area along with laser, and the injection flow of the liquid nitrogen is adjusted in stages according to the laser cutting process; and after the sapphire wafer is obtained after cutting is completed, the sapphire wafer is subjected to grinding, chamfering, polishing, annealing and cleaning treatment in sequence, and finally the infrared optical window is obtained. According to the machining method, the staged liquid nitrogen flow control mode is adopted in the laser cutting process, the requirement for the cooling performance of the sapphire material in different cutting stages can be better met, the heat influence possibly brought in the cutting process is effectively reduced, it is ensured that no stress concentration exists in the wafer, and the crack risk in the subsequent machining process is reduced; and the high transmittance and the structural stability of the product in an infrared band are ensured.

The utility model discloses a sapphire wafer chamfer inspection device in the technical field of sapphire wafer chamfer inspection, which comprises a storage cylinder, a rotating shaft is rotatably connected inside one end of the storage cylinder, one end of the rotating shaft is provided with a rotating plate through a screw, one end of the storage cylinder is provided with a fixed cylinder through a screw, and the other end of the storage cylinder is provided with a rotating shaft. A movable plate is connected into the fixed cylinder in a sliding mode, a movable column is connected to the top end of the movable plate in a sliding mode, and a containing groove is formed in one end face of the bottom of the rotary plate. Then the sapphire wafer is placed between the rotating plate and the storage cylinder to achieve chamfer inspection of the sapphire wafer, chamfer inspection of different angles is achieved through position adjustment of the rotating plate and the moving column, the application range of the inspection device is expanded, and after inspection is completed, the rotating plate can be stored into the storage cylinder.

The application relates to the technical field of semiconductor devices, and aims to solve the problem of limited application scenarios of semiconductor devices, and provides a semiconductor device and a manufacturing method thereof.The method comprises the following steps: completing front surface technology of GaAs MMIC wafers and GaN-on-Sapphire wafers; cutting the GaN-on-Sapphire wafer to form an array of GaN core particles; inverting a transfer substrate containing the array of GaN core particles and aligning the transfer substrate with metal PADs of the GaAs MMIC wafer, and driving the GaN core particles to be peeled off; realizing metal bonding of the GaN core particles and the GaN-on-Sapphire wafer; and completing back surface technology.The radio frequency power amplifier device of the GaN-on-Sapphire wafer and the metal PADs on the GaAs MMIC wafer are bonded, a semiconductor device which can take advantages of GaAs devices and GaN devices is formed, and therefore the application scenarios of the semiconductor device are widened.

Ti-doped sapphire on arbitrary substrates is provided by Ti-doping an undoped sapphire wafer, then layer transferring part of the resulting doped surface region to another substrate. The Ti-doping can be laterally uniform or laterally patterned. Improved control over the vertical doping uniformity and / or lateral doping contrast can be provided by appropriately positioning the top and bottom surfaces of the layer to be transferred relative to the doping profile. For well-characterized doping profiles this can be done by defining the depths of the top and bottom surfaces of the layer to be transferred, since the characterization can relate doping concentration to depth.

The present disclosure relates to a sapphire wafer measuring device, which belongs to the field of sapphire wafer processing. The sapphire wafer measuring device includes a loading station, a cleaning station and a measuring station. The cleaning station includes a conveyor belt and a primary water washing station, a secondary water washing station and an air-drying station for air-drying the sapphire wafer arranged in sequence along the conveyor belt. The loading station is arranged upstream of the conveyor belt for delivering the sapphire wafer to be cleaned to the conveyor belt. The measuring station is arranged downstream of the conveyor belt for receiving the cleaned sapphire wafer so that the TTV value of the sapphire wafer can be detected. The sapphire wafer measuring device disclosed in the present disclosure solves the problem of inaccurate TTV value measurement results of sapphire wafers existing in the related art.

The utility model discloses a wafer measuring machine table correction tool which comprises a sapphire wafer, the diameter of the sapphire wafer is 100 mm, the length of a single flat edge of the sapphire wafer is 34 mm, the sapphire wafer is provided with a positioning surface, the center position of the positioning surface is provided with a circular positioning original point with the diameter being 1 mm, and the diameter of the circular positioning original point is 1 mm. A plurality of first auxiliary positioning circular rings are arranged on the outer side of the positioning original point at intervals of 2 mm, and the width of each first auxiliary positioning circular ring is 1 mm. According to the wafer measuring machine table correction tool, center alignment can be conveniently and accurately carried out in the wafer machining process, the wafer machining machine table is corrected, and badness caused by center alignment errors in the wafer machining process can be effectively reduced.

The application provides a preparation method of a Micro-LED micro display device without sapphire substrate peeling, which comprises the following steps: firstly, preparing a LED micro pixel array on a sapphire wafer, a P-type gallium nitride epitaxial layer is close to the sapphire substrate, a multilayer quantum well layer is grown on the P-type gallium nitride epitaxial layer, an N-type gallium nitride epitaxial layer is grown on the multilayer quantum well, and an N-pole conductive electrode is epitaxially grown on the two side edges above the sapphire substrate; coating a color conversion layer on the sapphire wafer after the LED is grown, preparing a color filter layer above the color conversion layer after the color conversion layer is solidified to realize RGB color display; polishing the sapphire substrate, after thinning is completed, photoetching photoresist, etching the sapphire to the P-type gallium nitride layer and the N-pole conductive electrode; depositing P-pole metal and N-pole metal, and patterning to form P-pole and N-pole lead wires; cutting the sapphire wafer to cut out N small panels; and preparing the LED display device chip after flip chip bonding of the LED and a driving back plate and encapsulation.

The invention relates to the technical field of grinding and polishing, in particular to a sapphire polishing solution as well as a preparation method and application thereof. The sapphire polishing solution comprises the following components in parts by weight: 20-30 wt% of alumina powder, 0.1-1 wt% of a dispersing agent, 0.01-1 wt% of a suspension additive, 1-10 wt% of a pH regulator, 0.1-3 wt% of a lubricant and the balance of water, the suspension auxiliary agent is selected from one or more of nonionic cellulose ether and polysaccharide with rigid double-helix, low-charge and acetyl-free structural characteristics. The grinding particles of the sapphire polishing solution are excellent in suspension performance and high in dispersion stability under strong base and high ionic strength; the sapphire wafer polishing solution has high polishing removal efficiency and excellent surface quality (low roughness Ra) on sapphire wafers under the conditions of strong base and high ionic strength.