32 results about "Sapphire wafer" patented technology

The invention belongs to the technical field of micro-nano machining, and discloses a sapphire laser implicit cutting method and system based on femtosecond laser induced micro holes. The sapphire wafer is fixed on the object carrying moving unit, the femtosecond laser is used for emitting femtosecond laser, the femtosecond laser sequentially passes through the polarization rotating mirror, the first reflecting mirror and the objective lens and then is focused in the sapphire wafer, a micro-hole array is induced to grow in the sapphire wafer, the micro-hole array serves as a modification layer, and the modification layer is used for modifying the sapphire wafer. Carrying out femtosecond laser scanning by combining with a loading moving unit, and processing to obtain a plurality of modified layers; and applying an external force to separate the sapphire wafer after laser modification. According to the invention, the implicit cutting efficiency can be improved, and the fracture surface with lower roughness can be obtained.

The invention relates to a sapphire wafer back surface roughening method, which is based on a planetary double-sided grinding machine platform, and comprises the following steps: firstly, bonding the front surface of a low-TTV sapphire wafer subjected to double-sided accurate grinding and polishing to the surface of a ceramic plate, then fixing the ceramic plate on a wandering star wheel, then placing the wandering star wheel on a lower grinding plate, and grinding the sapphire wafer back surface with the lower grinding plate; wherein the back surface of the wafer faces the lower grinding disc; the upper grinding disc is forbidden, a sun gear and inner gear transmission mechanism is utilized, the wandering star wheel rotates on the lower grinding disc to form a precise grinding interface, and roughening of the back face of the sapphire wafer is achieved by regulating and controlling the rotating speed of the sun gear, the inner gear and the wandering star wheel. According to the method, on one hand, wafer thickness uniformity and parallelism control is achieved through the double-face polishing technology, on the other hand, low TTV control over the obtained single polished wafer is achieved in the roughening process through combination of equipment design and technology innovation, and the method is suitable for the 8-12-inch sapphire wafer and can be applied to the fields needing high-precision thickness control such as LED or semiconductor manufacturing.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

The invention relates to agglomerated diamond powder and a preparation method thereof, and the agglomerated diamond powder comprises the following components in percentage by weight: 40-60% of diamond micro-powder with the particle size of 1.5-5 microns and 40-60% of a ceramic bond, the ceramic bonding agent is prepared from the following components in percentage by weight: 35 to 42 percent of B2O3, 15 to 20 percent of Al2O3, 15 to 20 percent of SiO2, 6 to 8 percent of alkaline activating agent, 1 to 3 percent of rare earth oxide, 6 to 7 percent of Si, 1 to 3 percent of TiC, 2 to 3 percent of MnO and 3 to 4 percent of Cr2O3; 1%-2% of CeO2 and 0.5%-1% of V2O5. It can be known from the table 4 that a grinding wheel prepared from the agglomerated diamond powder prepared through the method has good grinding performance, the bending strength ranges from 55 MPa to 60 MPa, the Vickers hardness ranges from 67 HRB to 75 HRB, and the grinding ratio ranges from 736 to 789. The agglomerated diamond powder disclosed by the invention can be used for diamond grinding liquid, and is matched with grinding leather to process hard and brittle materials such as sapphire wafers, silicon carbide wafers and functional ceramics; and the cutting fluid is matched with cutting fluid to process hard and brittle materials such as glass ceramic cover plates, sapphire wafers and silicon carbide wafers.

The invention relates to the technical field of display screen preparation, in particular to a high-yield thermal compression welding method based on a direct laser mass transfer process, which comprises the following steps: pasting a resin bearing adhesive film on a TFT (Thin Film Transistor) back plate, presetting a metal welding spot on a Micro-LED (Light Emitting Diode) chip, transferring the Micro-LED chip from a sapphire substrate to the resin bearing adhesive film of the TFT back plate by using the laser mass transfer process, iCP etching is carried out, a flexible lamination is arranged on one side of the sapphire pressing sheet and is aligned with the Micro-LED chip, and a graphite sheet is arranged on one side, far away from the Micro-LED chip, of the TFT backboard; and after welding is finished, cooling is conducted to the room temperature, soaking is conducted, and the Micro-LED display screen is obtained. By the adoption of the steps, the problems that in the prior art, a Micro-LED chip deviates, residues are left after welding, and welding fails due to warping of a back plate are solved, and therefore the high-yield Micro-LED display screen is obtained.

The invention discloses a quartz wafer dynamic reversing cleaning basket device and a cleaning method, and belongs to the technical field of semiconductor cleaning equipment. The device comprises a cleaning basket, a movable upper cover and a deflection structure. The basket frame of the cleaning basket is provided with multiple sets of vertical clamping grooves used for bearing the wafer clamping plates, the movable upper cover is provided with corresponding transverse clamping grooves for restraining the upper edges of the wafer clamping plates, and an up-down restraining installation mode is formed. The deflection structure is arranged at the end of the basket, when the cleaning basket moves up and down in cleaning liquid, the deflection structure responds to the up-down movement, the reversing rod rotates through the guide slope mechanism, the eccentric head is driven to drive the movable upper cover to do horizontal reciprocating motion, and therefore the inclination angle of the wafer clamping plate is periodically changed, and dynamic reversing cleaning is achieved. The device adopts a pure mechanical design, has a self-adaptive adjusting mechanism, can automatically match the reversing frequency according to the cleaning intensity, and is particularly suitable for high-quality cleaning of semiconductor substrates such as quartz wafers, silicon wafers and sapphire wafers.

The application discloses a copper-based alloy single crystal wafer preparation method based on surface energy regulation. The method comprises the following steps: S1, depositing a high surface energy metal film on a copper-plated surface in a Cu(111) / sapphire single crystal wafer, wherein the high surface energy metal is a metal with a surface energy greater than that of copper; S2, re-depositing a copper film on the surface of the high surface energy metal film in the high surface energy metal / Cu(111) / sapphire wafer obtained in the step S1; and S3, placing the copper / high surface energy metal / Cu(111) / sapphire wafer obtained in the step S2 in a chemical vapor deposition reaction chamber and performing annealing recrystallization. The Cu(111) single crystal wafer with a relatively mature process is used as a template, so that the in-plane twin problem existing in the direct single crystallization process of the existing copper-based alloy wafer can be effectively solved. Meanwhile, through the surface energy regulation strategy, the solid-state dewetting phenomenon of the high surface energy metal layer can be successfully inhibited, so that the controllable preparation of the ultra-flat copper-based alloy single crystal metal wafer can be realized.

The embodiment of the application discloses a substrate integrated waveguide passive microwave element based on a sapphire substrate and a processing method and a processing device thereof. The processing method comprises the following steps: etching a sapphire wafer substrate by using a metal-assisted etching method and forming a through hole, depositing metal on the surface of the sapphire wafer and the side wall of the hexagonal through hole, and patterning the metal on the wafer surface by using a photoetching and etching process. The processing device comprises a semiconductor device for metal-assisted etching. The passive microwave element comprises a substrate integrated waveguide filter design matched with the processing method. By using the processing method, the manufacturing cost of the large-size via of the sapphire wafer is greatly reduced, so that after the wafer is divided into a plurality of independent microwave elements, the yield of the elements is greatly improved, and the manufacturing cost of the elements is reduced, which is significantly superior to the traditional laser drilling or mechanical drilling.

The utility model discloses a full-automatic chamfering machine for sapphire wafer plane processing, which comprises a working table, a support frame arranged on the working table, a moving component arranged on the support frame, a chamfering component arranged below the moving component, a clamping component arranged on the working table, a first fixing plate fixedly arranged on the top of the working table, and a second fixing plate fixedly arranged on the top of the working table. The second fixing plate is arranged at the top of the first fixing plate and is detachably clamped with the first fixing plate; placing grooves are formed in the opposite sides of the first fixing plate and the second fixing plate in a linear array manner; the third fixing plate is detachably arranged on the workbench, the fourth fixing plate is detachably arranged on the side face of the second fixing plate, and the fourth fixing plate is arranged at the top of the third fixing plate and detachably connected with the third fixing plate in a clamped mode. Fixing grooves are formed in the opposite sides of the third fixing plate and the fourth fixing plate in a linear array mode. And the fixing groove corresponds to the placing groove. According to the utility model, a plurality of wafers can be fixed and chamfered, and the chamfering efficiency is improved.

The invention discloses a cleaning process for sapphire optical wafer processing, and relates to the field of optical wafer precision processing. The invention provides a scheme for removing grinding materials, organic smudginess and impurity metals on the surface of a sapphire wafer aiming at final cleaning after sapphire optical wafer processing; the cleaning process comprises the step of preparing the sapphire wafer cleaning agent based on poly (acrylic acid-co-glycidyl methacrylate) grafted lauryl succinic acid comb-shaped macromolecules. The preparation method comprises the following steps: firstly, preparing a double-effect monomer with a dodecyl oleophylic chain and a dicarboxyl complexing group at the same time; and carrying out copolymerization on the monomer, acrylic acid and glycidyl methacrylate in a water phase to form the amphiphilic double-complexing high-molecular cleaning agent with a comb-shaped structure. The water-based cleaning agent can replace an original flammable organic solvent and strong alkali cleaning step, efficient cleaning is achieved under the mild condition close to neutral, the process is simplified, safety is improved, and the precise surface of a wafer can be protected against damage.

The utility model discloses a sapphire wafer chamfer inspection device in the technical field of sapphire wafer chamfer inspection, which comprises a storage cylinder, a rotating shaft is rotatably connected inside one end of the storage cylinder, one end of the rotating shaft is provided with a rotating plate through a screw, one end of the storage cylinder is provided with a fixed cylinder through a screw, and the other end of the storage cylinder is provided with a rotating shaft. A movable plate is connected into the fixed cylinder in a sliding mode, a movable column is connected to the top end of the movable plate in a sliding mode, and a containing groove is formed in one end face of the bottom of the rotary plate. Then the sapphire wafer is placed between the rotating plate and the storage cylinder to achieve chamfer inspection of the sapphire wafer, chamfer inspection of different angles is achieved through position adjustment of the rotating plate and the moving column, the application range of the inspection device is expanded, and after inspection is completed, the rotating plate can be stored into the storage cylinder.

The application relates to the technical field of semiconductor devices, and aims to solve the problem of limited application scenarios of semiconductor devices, and provides a semiconductor device and a manufacturing method thereof.The method comprises the following steps: completing front surface technology of GaAs MMIC wafers and GaN-on-Sapphire wafers; cutting the GaN-on-Sapphire wafer to form an array of GaN core particles; inverting a transfer substrate containing the array of GaN core particles and aligning the transfer substrate with metal PADs of the GaAs MMIC wafer, and driving the GaN core particles to be peeled off; realizing metal bonding of the GaN core particles and the GaN-on-Sapphire wafer; and completing back surface technology.The radio frequency power amplifier device of the GaN-on-Sapphire wafer and the metal PADs on the GaAs MMIC wafer are bonded, a semiconductor device which can take advantages of GaAs devices and GaN devices is formed, and therefore the application scenarios of the semiconductor device are widened.

Ti-doped sapphire on arbitrary substrates is provided by Ti-doping an undoped sapphire wafer, then layer transferring part of the resulting doped surface region to another substrate. The Ti-doping can be laterally uniform or laterally patterned. Improved control over the vertical doping uniformity and / or lateral doping contrast can be provided by appropriately positioning the top and bottom surfaces of the layer to be transferred relative to the doping profile. For well-characterized doping profiles this can be done by defining the depths of the top and bottom surfaces of the layer to be transferred, since the characterization can relate doping concentration to depth.

The application provides a preparation method of a Micro-LED micro display device without sapphire substrate peeling, which comprises the following steps: firstly, preparing a LED micro pixel array on a sapphire wafer, a P-type gallium nitride epitaxial layer is close to the sapphire substrate, a multilayer quantum well layer is grown on the P-type gallium nitride epitaxial layer, an N-type gallium nitride epitaxial layer is grown on the multilayer quantum well, and an N-pole conductive electrode is epitaxially grown on the two side edges above the sapphire substrate; coating a color conversion layer on the sapphire wafer after the LED is grown, preparing a color filter layer above the color conversion layer after the color conversion layer is solidified to realize RGB color display; polishing the sapphire substrate, after thinning is completed, photoetching photoresist, etching the sapphire to the P-type gallium nitride layer and the N-pole conductive electrode; depositing P-pole metal and N-pole metal, and patterning to form P-pole and N-pole lead wires; cutting the sapphire wafer to cut out N small panels; and preparing the LED display device chip after flip chip bonding of the LED and a driving back plate and encapsulation.

The invention relates to the technical field of grinding and polishing, in particular to a sapphire polishing solution as well as a preparation method and application thereof. The sapphire polishing solution comprises the following components in parts by weight: 20-30 wt% of alumina powder, 0.1-1 wt% of a dispersing agent, 0.01-1 wt% of a suspension additive, 1-10 wt% of a pH regulator, 0.1-3 wt% of a lubricant and the balance of water, the suspension auxiliary agent is selected from one or more of nonionic cellulose ether and polysaccharide with rigid double-helix, low-charge and acetyl-free structural characteristics. The grinding particles of the sapphire polishing solution are excellent in suspension performance and high in dispersion stability under strong base and high ionic strength; the sapphire wafer polishing solution has high polishing removal efficiency and excellent surface quality (low roughness Ra) on sapphire wafers under the conditions of strong base and high ionic strength.

This invention provides a sapphire wafer processing control system based on dynamic laser power adjustment. By dynamically adjusting the laser energy distribution and the coordinated control of the processing path, it effectively suppresses thermal damage and simultaneously improves surface precision during sapphire material processing. By establishing a real-time mapping relationship between thickness gradient and temperature field, and employing a multi-parameter closed-loop feedback mechanism, the heat-affected zone is precisely defined, thus avoiding remelting and cracking defects caused by heat accumulation in traditional processing. It is particularly suitable for high-precision processing requirements in areas with uneven thickness or edge regions. Adaptive energy distribution significantly improves the uniformity of material removal, enabling the surface roughness and geometric tolerances of optical components to consistently reach sub-micron levels. This globally optimized control strategy not only improves processing yield but also expands the machinability boundaries of complex optical components, providing a reliable technical guarantee for the mass production of high-precision optical devices.

The invention discloses an in-situ monitoring device and an in-situ monitoring method for a mineral precipitation behavior in a fluid mixing reaction process, and belongs to the technical field of mineralogy monitoring. The device comprises a fluid injection and control system, a fluid mixing reaction device, a movably mounted sample table and an in-situ detection system (a microscopic optical detection device, a Raman detection device or a neutron emission and detection device). Sapphire wafer windows are arranged in front of and behind the fluid mixing reaction device, so that optical signals and neutron signals can penetrate through the sapphire wafer windows; the upper end of the fluid mixing reaction device is connected with a fluid injection system, and continuous and stable injection of fluid is controlled through a high-precision high-pressure injection pump; and the lower end of the fluid mixing reaction device is connected with a vacuum pump and a liquid outlet, so that a vacuum environment condition in the reaction device can be realized before reaction. The optical imaging method and the neutron scattering method can be used for monitoring mineral crystal nucleation and growth changes in real time, and full-size change monitoring of mineral nucleation and growth in the fluid mixing reaction process can be achieved.

Proposed are a method of manufacturing a sapphire cover window, which includes: preparing a sapphire wafer; forming a cell edge processing portion on the sapphire wafer with a laser beam; forming an etched portion on the sapphire wafer by selectively performing wet etching on the cell edge processing portion; and separating a cell from the sapphire wafer by compressing the sapphire wafer on which the etched portion are formed, and a sapphire cover window manufactured thereby.

A kind of sapphire wafer automatic shovel piece device and method, wherein installation frame is provided with workbench, workbench is provided with rotary table, rotary table top is provided with bearing disc, bearing disc one side is provided with air bearing guide rail, collection jam;The guide rail surface of air bearing guide rail is provided with micropore array, and the bottom of air bearing guide rail is provided with flow guide cavity;Bearing disc top is provided with shovel knife, air knife, rotating frame at intervals, rotating frame is provided with vacuum chuck.Using rotary table, distance adjusting actuator respectively to bearing disc and wafer form rotary drive and inclination control, by air knife, shovel knife and vacuum chuck assembly to wafer array inner circle, outer circle is distributed automatically shovel, transfer operation, after being sent into air bearing guide rail, make wafer be positive pressure air film float to drift state to guarantee not to be physically impacted, then slide into collection jam and be collected, ensure wafer and carrier separation, transfer operation is highly automated, while ensuring wafer quality is intact and the consistency of collection piece sequence, increase the production efficiency of wafer manufacturing industry.

The utility model discloses sapphire wafer packing protection special box utensil, including box body and hinge installation on the box body upper surface one side's box lid, the box body is inside and is set up one row of placing groove, the placing groove is equipped with first cross board and second cross board, and the first cross board is fixed in the one side of placing groove, and the second cross board is slidably arranged in the placing groove, the placing groove is equipped with bottom plate, and the bottom plate slides up and down in the placing groove, the side of bottom plate is equipped with corrugated board close to second cross board, the other end of corrugated board is slidably connected with second cross board, and along second cross board side surface slide up and down, the placing groove is movably equipped with a plurality of vertical boards, and the vertical board with first cross board and second cross board are all inserted joint connection, the vertical board, first cross board and second cross board between are accommodating cavity. Advantageous effect: the placement of different diameter length, different thickness sapphire crystal is suitable, and the adjacent sapphire crystal is cut off by accommodating cavity, and will not collide with each other, avoids the damage.

The utility model discloses large-size sapphire wafer double-sided grinding machine equipment which comprises a working table, and a support is arranged on the working table. The support is in a U shape, and polishing pieces are symmetrically arranged on the two sides of the support. The number of the mounting blocks, the number of the clamping blocks and the number of the driving blocks are all two; one mounting block is fixed to the workbench, the other mounting block is connected with the bottom of the support through a connecting rod, and the two mounting blocks are arranged up and down and located between the two sets of polishing pieces; clamping blocks are connected to the opposite sides of the two mounting blocks in an inserted mode, and arc-shaped grooves are formed in the clamping blocks. The two driving blocks are slidably arranged on the workbench and symmetrically arranged on the two sides of the clamping block, and rolling wheels are rotationally arranged in the middles of the ends, close to the clamping block, of the driving blocks. The sapphire wafer double-face polishing device can polish double faces of a sapphire wafer comprehensively and is high in polishing efficiency.

The invention discloses automatic multi-sapphire surface sputtering equipment for preparing a gallium nitride substrate, and relates to the field of sapphire surface sputtering, the automatic multi-sapphire surface sputtering equipment comprises a sputtering chamber, a vacuum transmission chamber, a loading chamber, a cooling chamber, a second vacuum pump and a first vacuum pump, the sputtering chamber comprises a heater, a heater baffle, a substrate support, a sputtering baffle, a Ti target and a magnetron sputtering magnet, a folding type multi-joint manipulator is installed in an inner cavity of the vacuum transmission chamber, a clamping plug box is installed in an inner cavity of the loading chamber, and an infrared sensor is installed on the outer wall of the loading chamber. According to the automatic multi-sapphire surface sputtering equipment for preparing the gallium nitride substrate, continuous operation of procedures such as feeding, sputtering and cooling of sapphire wafers in magnetron sputtering equipment is realized; the equipment is provided with a customized folding type multi-joint manipulator and a clamping jaw, and automation of one-furnace multi-wafer sputtering operation is realized by means of automatic alignment of sapphire wafers by an infrared sensor and the like.

The invention discloses a controllable wafer-level two-dimensional electron gas structure and a preparation method thereof, and the structure employs a bonding structure, and comprises an upper layer structure and a lower layer structure. The upper layer structure comprises an upper layer sapphire wafer and an aluminum nitride epitaxial layer; the lower layer structure comprises an aluminum nitride epitaxial layer and a lower layer sapphire wafer. According to the bonding process, gapless tight bonding on the atomic scale is achieved through surface recrystallization, the bonding strength is high, the interface stability is effectively improved, the complex growth process of heterojunctions is avoided, formation of a two-dimensional electron gas interface is controlled by using homojunctions and polarity reversal, the good electron mobility is achieved, and the high-performance solar cell is obtained. And the construction process of the semiconductor device is simplified, so that the performance of the device can be improved.

The optical fiber temperature and pressure integrated sensor comprises a pressure-sensitive sapphire wafer, a non-etching sapphire wafer and a chip tube shell, an etching groove is formed in the pressure-sensitive sapphire wafer, a vacuum pressure cavity is formed in the top of the etching groove and the top of the non-etching sapphire wafer, a high-reflection optical film is arranged on the inner surface of the vacuum pressure cavity, and the high-reflection optical film is arranged on the inner surface of the non-etching sapphire wafer. A low-reflection optical film is arranged at the bottom of the non-etching sapphire wafer, and the pressure-sensitive sapphire wafer and the non-etching sapphire wafer are bonded to form an MEMS optical chip; and an optical fiber coupling probe matched with the MEMS optical chip is arranged on the chip tube shell and is connected with an optical fiber demodulator. The invention further comprises a resolving method. The optical fiber temperature and pressure integrated sensor is matched with a specific resolving method, and high-precision, high-consistency and batched pressure and temperature integrated detection under the high-temperature environment of 500 DEG C can be achieved.

The application discloses a patterned sapphire substrate, a preparation method and an LED epitaxial wafer. The preparation method of the patterned sapphire substrate comprises the following steps: preparing a photoresist mask on the surface of a sapphire wafer; etching the sapphire wafer by a first plasma source to form a first patterned area, and generating an etching product in the etching process, and simultaneously reacting the etching product with a second plasma source to generate a secondary mask, so that the secondary mask is deposited on the etched surface, wherein the deposition effect of the side surface of the first patterned area is greater than the bottom deposition effect, and the etching effect is greater than the secondary mask deposition effect; and performing pattern modification etching on the first patterned area by the first plasma source to obtain a sapphire-based three-dimensional pattern. By adopting the above scheme, the problems of insufficient transverse etching control ability and excessively long overall etching time of the existing preparation method of the patterned sapphire substrate are solved.

The application provides a preparation method of a twin-free single crystal metal wafer. A certain thickness of metal film is sputtered on a sapphire single crystal wafer substrate by a magnetron sputtering method. The sputtered metal / sapphire wafer is placed on a flat heating plate, and a graphite gasket with a certain size is placed between the metal wafer and the heating plate. The graphite gasket is located directly below the center of the metal wafer, so that the metal wafer is located in a temperature field with a gradient distribution from the center to the edge during the temperature rising process of the flat heating plate to perform annealing and single crystallization. By adjusting the size of the graphite gasket and the temperature of the heating plate, the in-plane twin density of the single crystal metal wafer can be significantly reduced. The application solves the in-plane twin problem existing in the single crystallization process of the existing metal wafer, and can realize the controllable preparation of the twin-free single crystal metal wafer.

A process for processing a sapphire wafer (10) comprises sawing (S100) a sapphire block (100) to provide a sapphire wafer (10), lapping (S110) a major surface (105, 107) of the sapphire wafer (10), and cleaning (S120) the sapphire wafer (10) in a mixture containing H₂SO₄ and H₃PO₄. The sapphire wafer (10) is exposed to a temperature below 800°C between lapping (S110) and cleaning (S120). The process further comprises a heat treatment (S130) at a temperature above 1000°C after cleaning (S120) the sapphire wafer (10).

The application discloses a grinding disc device of a sapphire wafer substrate, a signal acquisition module collects a grinding force signal of a grinding disc and transmits the signal to a control module, the control module compares a collected grinding force value F1 with a preset force value F0, calculates a deviation value E of the grinding force value F1 and the preset force value F0, and then: if the deviation value E is less than 0, the control module controls an execution module to execute a pressure increasing instruction, so that the grinding force of the grinding disc is increased; if the deviation value E is equal to 0, the control module does not issue an instruction to the execution module, so that the grinding force of the grinding disc remains unchanged; and if the deviation value E is greater than 0, the control module controls the execution module to execute a pressure decreasing instruction, so that the grinding force of the grinding disc is decreased. The grinding disc device can ensure that the grinding force of each grinding disc is stable and unchanged, so that the uniformity of the grinding force inside and outside the grinding disc is ensured. Moreover, the grinding disc device is more suitable for large-size grinding discs and is better for the grinding uniformity of the substrate.

The utility model discloses sapphire wafer flatness optical full-automatic detection equipment which comprises a workbench, and a display screen and a control console are arranged on one side of the workbench. A support is arranged on the top of the workbench, a detector is arranged on the support, and the detector, the display screen and the console are electrically connected. A detection table is slidably arranged on the workbench; a first groove is formed in the workbench, a guide frame is arranged in the first groove, the guide frame is U-shaped, a first rack is arranged on the inner side of the guide frame, a first gear is rotationally arranged at the bottom of the detection table, and the first gear is in meshed connection with the first rack; a clamping assembly is arranged on the detection table and is used for clamping and fixing the side surface of the wafer; auxiliary assemblies are arranged on the two sides of the detection table and used for assisting the clamping assemblies in centering and clamping the wafers. According to the utility model, in the moving process of the detection table, flatness detection can be carried out on one half of the wafer, and then the other side of the wafer is detected, so that the detection of the wafer is more comprehensive, and the overall detection precision is improved.

This invention relates to a method for roughening the back side of sapphire wafers. Based on a planetary double-sided polishing machine platform, the method first attaches the front side of a low-TTV sapphire wafer, after double-sided fine grinding and polishing, to the surface of a ceramic disk. Next, the ceramic disk is fixed to a planetary wheel, which is then placed on a lower polishing disk, with the back side of the wafer facing down. The upper polishing disk is disabled. Using a sun gear and internal gear transmission mechanism, the planetary wheel rotates on the lower polishing disk, forming a precision polishing interface. Roughening of the back side of the sapphire wafer is achieved by adjusting the rotational speeds of the sun gear, internal gear, and planetary wheel. This method, on the one hand, relies on the double-sided polishing process to achieve wafer thickness uniformity and parallelism control; on the other hand, through a combination of equipment design and process innovation, it achieves low TTV control for the resulting single-polished wafer during the roughening process. It is suitable for 8-12 inch sapphire wafers and can be applied to fields requiring high-precision thickness control, such as LED or semiconductor manufacturing.