51 results about "Sapphire wafer" patented technology

The utility model relates to the technical field of sapphire wafer scratch resistance testing, in particular to a device for sapphire wafer scratch resistance testing. The device for testing the scratch resistance of the sapphire wafer comprises a base, a supporting plate, a guide rail, a connecting block, a pull rod, a measuring rod, a measuring assembly and a balancing weight. The supporting plate is fixed on the base; the guide rail is fixed on the supporting plate; the connecting block is slidably arranged on the guide rail; the pull rod is fixedly connected to one side of the connecting block; the measuring rod penetrates through the connecting block and is not fixedly connected with the connecting block; the measuring assembly is in threaded connection with the measuring rod; and the balancing weight is sleeved on the measuring rod. The measuring rod is sleeved with one or more balancing weights, the pull rod is moved to drive the connecting block, the measuring rod and the measuring assembly to move, the scratch resistance of the sapphire wafer can be effectively measured, and the test is not limited by the shape of the sapphire wafer. In addition, the device is simple in structure, convenient to operate, low in testing cost, convenient to move and not limited by use sites.

The invention belongs to the technical field of micro-nano machining, and discloses a sapphire laser implicit cutting method and system based on femtosecond laser induced micro holes. The sapphire wafer is fixed on the object carrying moving unit, the femtosecond laser is used for emitting femtosecond laser, the femtosecond laser sequentially passes through the polarization rotating mirror, the first reflecting mirror and the objective lens and then is focused in the sapphire wafer, a micro-hole array is induced to grow in the sapphire wafer, the micro-hole array serves as a modification layer, and the modification layer is used for modifying the sapphire wafer. Carrying out femtosecond laser scanning by combining with a loading moving unit, and processing to obtain a plurality of modified layers; and applying an external force to separate the sapphire wafer after laser modification. According to the invention, the implicit cutting efficiency can be improved, and the fracture surface with lower roughness can be obtained.

The invention relates to a sapphire wafer back surface roughening method, which is based on a planetary double-sided grinding machine platform, and comprises the following steps: firstly, bonding the front surface of a low-TTV sapphire wafer subjected to double-sided accurate grinding and polishing to the surface of a ceramic plate, then fixing the ceramic plate on a wandering star wheel, then placing the wandering star wheel on a lower grinding plate, and grinding the sapphire wafer back surface with the lower grinding plate; wherein the back surface of the wafer faces the lower grinding disc; the upper grinding disc is forbidden, a sun gear and inner gear transmission mechanism is utilized, the wandering star wheel rotates on the lower grinding disc to form a precise grinding interface, and roughening of the back face of the sapphire wafer is achieved by regulating and controlling the rotating speed of the sun gear, the inner gear and the wandering star wheel. According to the method, on one hand, wafer thickness uniformity and parallelism control is achieved through the double-face polishing technology, on the other hand, low TTV control over the obtained single polished wafer is achieved in the roughening process through combination of equipment design and technology innovation, and the method is suitable for the 8-12-inch sapphire wafer and can be applied to the fields needing high-precision thickness control such as LED or semiconductor manufacturing.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a wafer cutting method. The wafer cutting method provided by the invention comprises the following steps: (1) bonding a hard mask A on the front surface of a wafer to be cut, and bonding a hard mask B on the back surface of the wafer to be cut; cutting channels are etched on the hard mask A and the hard mask B; the hard mask A and the hard mask B independently comprise at least one of a quartz wafer and a sapphire wafer; and (2) etching the wafer to be cut through the cutting channel, and removing the hard mask A and the hard mask B to obtain a cut bare core. The cutting method provided by the invention can effectively solve the problems that the time for growing the thick mask on the current wafer is long and the thick mask is difficult to grow, and meanwhile, the wafer cutting efficiency is improved.

The embodiment of the present disclosure provides a light emitting diode chip, a preparation method thereof and a display device, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: forming a connection electrode layer on each light emitting unit, and the first connection electrode on each light emitting unit points to the second connection electrode along a first direction, the included angle between the first direction and the flat side is 30-60 degrees, and the first direction is the length direction of the rectangular projection; or the first connection electrode on a part of the light emitting units points to the second connection electrode along a second direction, the second direction is the length direction of the rectangular projection, and the first connection electrode on another part of the light emitting units points to the second connection electrode along a third direction, and the third direction is opposite to the second direction; and the sapphire wafer is cracked along the cutting path to obtain a plurality of light emitting diode chips. The embodiment of the present disclosure can make the light emitting pattern of the LED chip or the light pattern of the display device using the LED chip more symmetrical.

The invention relates to agglomerated diamond powder and a preparation method thereof, and the agglomerated diamond powder comprises the following components in percentage by weight: 40-60% of diamond micro-powder with the particle size of 1.5-5 microns and 40-60% of a ceramic bond, the ceramic bonding agent is prepared from the following components in percentage by weight: 35 to 42 percent of B2O3, 15 to 20 percent of Al2O3, 15 to 20 percent of SiO2, 6 to 8 percent of alkaline activating agent, 1 to 3 percent of rare earth oxide, 6 to 7 percent of Si, 1 to 3 percent of TiC, 2 to 3 percent of MnO and 3 to 4 percent of Cr2O3; 1%-2% of CeO2 and 0.5%-1% of V2O5. It can be known from the table 4 that a grinding wheel prepared from the agglomerated diamond powder prepared through the method has good grinding performance, the bending strength ranges from 55 MPa to 60 MPa, the Vickers hardness ranges from 67 HRB to 75 HRB, and the grinding ratio ranges from 736 to 789. The agglomerated diamond powder disclosed by the invention can be used for diamond grinding liquid, and is matched with grinding leather to process hard and brittle materials such as sapphire wafers, silicon carbide wafers and functional ceramics; and the cutting fluid is matched with cutting fluid to process hard and brittle materials such as glass ceramic cover plates, sapphire wafers and silicon carbide wafers.

The invention relates to the technical field of display screen preparation, in particular to a high-yield thermal compression welding method based on a direct laser mass transfer process, which comprises the following steps: pasting a resin bearing adhesive film on a TFT (Thin Film Transistor) back plate, presetting a metal welding spot on a Micro-LED (Light Emitting Diode) chip, transferring the Micro-LED chip from a sapphire substrate to the resin bearing adhesive film of the TFT back plate by using the laser mass transfer process, iCP etching is carried out, a flexible lamination is arranged on one side of the sapphire pressing sheet and is aligned with the Micro-LED chip, and a graphite sheet is arranged on one side, far away from the Micro-LED chip, of the TFT backboard; and after welding is finished, cooling is conducted to the room temperature, soaking is conducted, and the Micro-LED display screen is obtained. By the adoption of the steps, the problems that in the prior art, a Micro-LED chip deviates, residues are left after welding, and welding fails due to warping of a back plate are solved, and therefore the high-yield Micro-LED display screen is obtained.

The invention discloses a quartz wafer dynamic reversing cleaning basket device and a cleaning method, and belongs to the technical field of semiconductor cleaning equipment. The device comprises a cleaning basket, a movable upper cover and a deflection structure. The basket frame of the cleaning basket is provided with multiple sets of vertical clamping grooves used for bearing the wafer clamping plates, the movable upper cover is provided with corresponding transverse clamping grooves for restraining the upper edges of the wafer clamping plates, and an up-down restraining installation mode is formed. The deflection structure is arranged at the end of the basket, when the cleaning basket moves up and down in cleaning liquid, the deflection structure responds to the up-down movement, the reversing rod rotates through the guide slope mechanism, the eccentric head is driven to drive the movable upper cover to do horizontal reciprocating motion, and therefore the inclination angle of the wafer clamping plate is periodically changed, and dynamic reversing cleaning is achieved. The device adopts a pure mechanical design, has a self-adaptive adjusting mechanism, can automatically match the reversing frequency according to the cleaning intensity, and is particularly suitable for high-quality cleaning of semiconductor substrates such as quartz wafers, silicon wafers and sapphire wafers.

The application discloses a copper-based alloy single crystal wafer preparation method based on surface energy regulation. The method comprises the following steps: S1, depositing a high surface energy metal film on a copper-plated surface in a Cu(111) / sapphire single crystal wafer, wherein the high surface energy metal is a metal with a surface energy greater than that of copper; S2, re-depositing a copper film on the surface of the high surface energy metal film in the high surface energy metal / Cu(111) / sapphire wafer obtained in the step S1; and S3, placing the copper / high surface energy metal / Cu(111) / sapphire wafer obtained in the step S2 in a chemical vapor deposition reaction chamber and performing annealing recrystallization. The Cu(111) single crystal wafer with a relatively mature process is used as a template, so that the in-plane twin problem existing in the direct single crystallization process of the existing copper-based alloy wafer can be effectively solved. Meanwhile, through the surface energy regulation strategy, the solid-state dewetting phenomenon of the high surface energy metal layer can be successfully inhibited, so that the controllable preparation of the ultra-flat copper-based alloy single crystal metal wafer can be realized.

The embodiment of the application discloses a substrate integrated waveguide passive microwave element based on a sapphire substrate and a processing method and a processing device thereof. The processing method comprises the following steps: etching a sapphire wafer substrate by using a metal-assisted etching method and forming a through hole, depositing metal on the surface of the sapphire wafer and the side wall of the hexagonal through hole, and patterning the metal on the wafer surface by using a photoetching and etching process. The processing device comprises a semiconductor device for metal-assisted etching. The passive microwave element comprises a substrate integrated waveguide filter design matched with the processing method. By using the processing method, the manufacturing cost of the large-size via of the sapphire wafer is greatly reduced, so that after the wafer is divided into a plurality of independent microwave elements, the yield of the elements is greatly improved, and the manufacturing cost of the elements is reduced, which is significantly superior to the traditional laser drilling or mechanical drilling.

The utility model discloses a full-automatic chamfering machine for sapphire wafer plane processing, which comprises a working table, a support frame arranged on the working table, a moving component arranged on the support frame, a chamfering component arranged below the moving component, a clamping component arranged on the working table, a first fixing plate fixedly arranged on the top of the working table, and a second fixing plate fixedly arranged on the top of the working table. The second fixing plate is arranged at the top of the first fixing plate and is detachably clamped with the first fixing plate; placing grooves are formed in the opposite sides of the first fixing plate and the second fixing plate in a linear array manner; the third fixing plate is detachably arranged on the workbench, the fourth fixing plate is detachably arranged on the side face of the second fixing plate, and the fourth fixing plate is arranged at the top of the third fixing plate and detachably connected with the third fixing plate in a clamped mode. Fixing grooves are formed in the opposite sides of the third fixing plate and the fourth fixing plate in a linear array mode. And the fixing groove corresponds to the placing groove. According to the utility model, a plurality of wafers can be fixed and chamfered, and the chamfering efficiency is improved.

The invention discloses a cleaning process for sapphire optical wafer processing, and relates to the field of optical wafer precision processing. The invention provides a scheme for removing grinding materials, organic smudginess and impurity metals on the surface of a sapphire wafer aiming at final cleaning after sapphire optical wafer processing; the cleaning process comprises the step of preparing the sapphire wafer cleaning agent based on poly (acrylic acid-co-glycidyl methacrylate) grafted lauryl succinic acid comb-shaped macromolecules. The preparation method comprises the following steps: firstly, preparing a double-effect monomer with a dodecyl oleophylic chain and a dicarboxyl complexing group at the same time; and carrying out copolymerization on the monomer, acrylic acid and glycidyl methacrylate in a water phase to form the amphiphilic double-complexing high-molecular cleaning agent with a comb-shaped structure. The water-based cleaning agent can replace an original flammable organic solvent and strong alkali cleaning step, efficient cleaning is achieved under the mild condition close to neutral, the process is simplified, safety is improved, and the precise surface of a wafer can be protected against damage.

The invention relates to a method for improving the cleaning quality, in particular to a method for improving the cleaning quality of a sapphire wafer. The invention aims to solve the problems that the end face of a wafer tray jumps and the cleaning quality is reduced due to machining or assembly tolerance of the conventional wafer rotary cleaning machine. The sapphire wafer cleaning quality can be improved, namely, the end jump amplitude of the split type tray is greatly reduced, the defect that end jump balance cannot be guaranteed in the design of an original cleaning machine can be overcome, if end jump abnormity occurs in the cleaning process, adjustment can be achieved through shutdown, convenience and rapidness are achieved, and fluctuation of the wafer cleaning yield caused by the too high end jump value is relieved; the end jump amplitude is reduced, so that the contact pressure between the brush roller and the wafer is more uniform in the cleaning process, the fitting degree of the brush head and the wafer is higher in the whole cleaning time, and the cleaning quality is guaranteed; on the other hand, abrasion of the brush roll is reduced, the service life is prolonged, and cleaning cost is reduced. The invention belongs to the technical field of sapphire wafer cleaning.

The invention relates to an infrared optical window processing method in the technical field of infrared optical windows. The infrared optical window processing method comprises the following steps: preparing a sapphire material; laser cutting is adopted to assist liquid nitrogen injection to cut the sapphire material, liquid nitrogen covers a cutting area along with laser, and the injection flow of the liquid nitrogen is adjusted in stages according to the laser cutting process; and after the sapphire wafer is obtained after cutting is completed, the sapphire wafer is subjected to grinding, chamfering, polishing, annealing and cleaning treatment in sequence, and finally the infrared optical window is obtained. According to the machining method, the staged liquid nitrogen flow control mode is adopted in the laser cutting process, the requirement for the cooling performance of the sapphire material in different cutting stages can be better met, the heat influence possibly brought in the cutting process is effectively reduced, it is ensured that no stress concentration exists in the wafer, and the crack risk in the subsequent machining process is reduced; and the high transmittance and the structural stability of the product in an infrared band are ensured.

The utility model discloses a sapphire wafer chamfer inspection device in the technical field of sapphire wafer chamfer inspection, which comprises a storage cylinder, a rotating shaft is rotatably connected inside one end of the storage cylinder, one end of the rotating shaft is provided with a rotating plate through a screw, one end of the storage cylinder is provided with a fixed cylinder through a screw, and the other end of the storage cylinder is provided with a rotating shaft. A movable plate is connected into the fixed cylinder in a sliding mode, a movable column is connected to the top end of the movable plate in a sliding mode, and a containing groove is formed in one end face of the bottom of the rotary plate. Then the sapphire wafer is placed between the rotating plate and the storage cylinder to achieve chamfer inspection of the sapphire wafer, chamfer inspection of different angles is achieved through position adjustment of the rotating plate and the moving column, the application range of the inspection device is expanded, and after inspection is completed, the rotating plate can be stored into the storage cylinder.

The application relates to the technical field of semiconductor devices, and aims to solve the problem of limited application scenarios of semiconductor devices, and provides a semiconductor device and a manufacturing method thereof.The method comprises the following steps: completing front surface technology of GaAs MMIC wafers and GaN-on-Sapphire wafers; cutting the GaN-on-Sapphire wafer to form an array of GaN core particles; inverting a transfer substrate containing the array of GaN core particles and aligning the transfer substrate with metal PADs of the GaAs MMIC wafer, and driving the GaN core particles to be peeled off; realizing metal bonding of the GaN core particles and the GaN-on-Sapphire wafer; and completing back surface technology.The radio frequency power amplifier device of the GaN-on-Sapphire wafer and the metal PADs on the GaAs MMIC wafer are bonded, a semiconductor device which can take advantages of GaAs devices and GaN devices is formed, and therefore the application scenarios of the semiconductor device are widened.

Ti-doped sapphire on arbitrary substrates is provided by Ti-doping an undoped sapphire wafer, then layer transferring part of the resulting doped surface region to another substrate. The Ti-doping can be laterally uniform or laterally patterned. Improved control over the vertical doping uniformity and / or lateral doping contrast can be provided by appropriately positioning the top and bottom surfaces of the layer to be transferred relative to the doping profile. For well-characterized doping profiles this can be done by defining the depths of the top and bottom surfaces of the layer to be transferred, since the characterization can relate doping concentration to depth.

The application provides a preparation method of a Micro-LED micro display device without sapphire substrate peeling, which comprises the following steps: firstly, preparing a LED micro pixel array on a sapphire wafer, a P-type gallium nitride epitaxial layer is close to the sapphire substrate, a multilayer quantum well layer is grown on the P-type gallium nitride epitaxial layer, an N-type gallium nitride epitaxial layer is grown on the multilayer quantum well, and an N-pole conductive electrode is epitaxially grown on the two side edges above the sapphire substrate; coating a color conversion layer on the sapphire wafer after the LED is grown, preparing a color filter layer above the color conversion layer after the color conversion layer is solidified to realize RGB color display; polishing the sapphire substrate, after thinning is completed, photoetching photoresist, etching the sapphire to the P-type gallium nitride layer and the N-pole conductive electrode; depositing P-pole metal and N-pole metal, and patterning to form P-pole and N-pole lead wires; cutting the sapphire wafer to cut out N small panels; and preparing the LED display device chip after flip chip bonding of the LED and a driving back plate and encapsulation.

The invention relates to the technical field of grinding and polishing, in particular to a sapphire polishing solution as well as a preparation method and application thereof. The sapphire polishing solution comprises the following components in parts by weight: 20-30 wt% of alumina powder, 0.1-1 wt% of a dispersing agent, 0.01-1 wt% of a suspension additive, 1-10 wt% of a pH regulator, 0.1-3 wt% of a lubricant and the balance of water, the suspension auxiliary agent is selected from one or more of nonionic cellulose ether and polysaccharide with rigid double-helix, low-charge and acetyl-free structural characteristics. The grinding particles of the sapphire polishing solution are excellent in suspension performance and high in dispersion stability under strong base and high ionic strength; the sapphire wafer polishing solution has high polishing removal efficiency and excellent surface quality (low roughness Ra) on sapphire wafers under the conditions of strong base and high ionic strength.

This invention provides a sapphire wafer processing control system based on dynamic laser power adjustment. By dynamically adjusting the laser energy distribution and the coordinated control of the processing path, it effectively suppresses thermal damage and simultaneously improves surface precision during sapphire material processing. By establishing a real-time mapping relationship between thickness gradient and temperature field, and employing a multi-parameter closed-loop feedback mechanism, the heat-affected zone is precisely defined, thus avoiding remelting and cracking defects caused by heat accumulation in traditional processing. It is particularly suitable for high-precision processing requirements in areas with uneven thickness or edge regions. Adaptive energy distribution significantly improves the uniformity of material removal, enabling the surface roughness and geometric tolerances of optical components to consistently reach sub-micron levels. This globally optimized control strategy not only improves processing yield but also expands the machinability boundaries of complex optical components, providing a reliable technical guarantee for the mass production of high-precision optical devices.

The present invention relates to a light-emitting driving element packaging device, a method for manufacturing the same, and a wafer for bonding, which can prevent a bending phenomenon or a twisting phenomenon caused by a difference in thermal deformation coefficients when a sapphire wafer and a silicon wafer are bonded, and can comprise: a light-emitting element part made of a sapphire material, a light-emitting unit that outputs light; and a driving element part which is bonded to the light-emitting element part, is made of a silicon material, and has a driving circuit part for accessing a driving signal for driving the light-emitting part to the light-emitting part. Wherein the light-emitting element part or the driving element part is provided with a thermal deformation prevention hole part in at least a part, so as to prevent a bending phenomenon or a twisting phenomenon caused by a difference between thermal expansion coefficients of a sapphire material and a silicon material.

Provided are a light-emitting driving device package apparatus capable of preventing warping or distortion caused by the difference in thermal expansion coefficient when a sapphire wafer and a silicon wafer are bonded together, a method of manufacturing the same, and a bonding wafer, the light-emitting driving device package apparatus including a light-emitting device made of sapphire material and including a light-emitter for outputting light, and a driving device bonded to the light-emitting device, made of silicon material, and including a driving circuit for applying a driving signal to the light-emitter to drive the light-emitter, wherein thermal deformation prevention holes are formed in at least portions of the light-emitting device or the driving device to prevent warping or distortion caused by a difference in thermal expansion coefficient between sapphire material and silicon material.

The optical fiber sensor based on the multi-parameter response mechanism of the cascaded FFPI cavity includes a ceramic tube No. 1 and a ceramic tube No. 2 arranged in the ceramic tube No. 1, wherein a sapphire wafer No. 1 is embedded in the bottom of the ceramic tube No. 1, and a sapphire wafer No. 2 is provided at one end of the ceramic tube No. 2 extending into the ceramic tube No. 1, and an FFPI-1 cavity is formed in the ceramic tube No. 1 and between the sapphire wafer No. 1 and the sapphire wafer No. 2; a pure quartz optical fiber is provided in the ceramic tube No. 2, wherein an optical fiber core is wrapped inside the pure quartz optical fiber, and an FFPI-2 cavity is formed in the ceramic tube No. 2 and between one end of the pure quartz optical fiber close to the sapphire wafer No. 2 and the sapphire wafer No. 2; an FFPI-3 cavity is further provided in the pure quartz optical fiber located in the ceramic tube No. 2; the present invention quantitatively analyzes the crosstalk perception between different parameters under the action of high temperature and multi-physical field coupling, establishes a multi-parameter superposition response model and a crosstalk elimination model, combines the high-temperature resistant materials of sapphire and ceramic tubes, and is resistant to high temperature, large strain, and high pressure, and has high measurement accuracy.

The invention discloses an in-situ monitoring device and an in-situ monitoring method for a mineral precipitation behavior in a fluid mixing reaction process, and belongs to the technical field of mineralogy monitoring. The device comprises a fluid injection and control system, a fluid mixing reaction device, a movably mounted sample table and an in-situ detection system (a microscopic optical detection device, a Raman detection device or a neutron emission and detection device). Sapphire wafer windows are arranged in front of and behind the fluid mixing reaction device, so that optical signals and neutron signals can penetrate through the sapphire wafer windows; the upper end of the fluid mixing reaction device is connected with a fluid injection system, and continuous and stable injection of fluid is controlled through a high-precision high-pressure injection pump; and the lower end of the fluid mixing reaction device is connected with a vacuum pump and a liquid outlet, so that a vacuum environment condition in the reaction device can be realized before reaction. The optical imaging method and the neutron scattering method can be used for monitoring mineral crystal nucleation and growth changes in real time, and full-size change monitoring of mineral nucleation and growth in the fluid mixing reaction process can be achieved.

Proposed are a method of manufacturing a sapphire cover window, which includes: preparing a sapphire wafer; forming a cell edge processing portion on the sapphire wafer with a laser beam; forming an etched portion on the sapphire wafer by selectively performing wet etching on the cell edge processing portion; and separating a cell from the sapphire wafer by compressing the sapphire wafer on which the etched portion are formed, and a sapphire cover window manufactured thereby.

The invention discloses a gradient density composite pendulous reed based on a sapphire material and a preparation method of the gradient density composite pendulous reed, and belongs to the technical field of micro electro mechanical system accelerometers. The preparation method comprises the following steps: pre-treating a C-surface sapphire wafer to remove surface impurities, and coating photoresist on the back surface to obtain a pre-treated wafer; dividing the central area of the front surface of the pretreated wafer into a plurality of concentric annular belts, and performing femtosecond laser micropore processing treatment on the concentric annular belts to obtain a microporous wafer; a spiral spring pattern is photoetched outside a concentric ring belt on the outermost side of the front face of the microporous wafer, and after etching is conducted, polishing and annealing treatment are conducted to obtain an annealed wafer; and forming a wafer deposited with a Ti / Pt adhesion layer by adopting a magnetron sputtering method, carrying out electroplating treatment to form a gold electrode, and carrying out post-treatment to obtain the gradient density composite pendulous reed. The performance breakthrough of the accelerometer pendulous reed between high sensitivity and rapid dynamic response is realized through the gradient density design of the sapphire material and the collaborative optimization of the micro-nano processing technology.

The invention relates to a wafer surface quality control method based on laser-induced phase change, which comprises the following steps of: firstly, scanning and irradiating the surface of a wafer by adopting ultrafast laser, setting proper laser parameters and laser scanning and irradiation longitudinal overlapping ratio and transverse overlapping ratio, and inducing the surface of the wafer to generate phase change (amorphous state or metastable phase) while inhibiting the formation of a micro groove; then the wafer subjected to phase change is immersed in a specific etching solution with the etching rate far higher than that of a base body on a phase change area, the etching time and concentration are adjusted in cooperation with ultrasonic-assisted treatment, it is ensured that the modified layer is completely removed, meanwhile, the integrity of the base body is kept, and high-precision selective machining is achieved. A repeatable surface quality control method is established, the problem of high surface roughness of wafer laser machining is solved, the surface roughness of the machined wafer is remarkably reduced, the etching rate is remarkably increased, the machining time is shortened, and the method can be suitable for various transparent crystals such as sapphire wafers and optical windows and has a wide application prospect. Good market prospects are realized.

A kind of sapphire wafer automatic shovel piece device and method, wherein installation frame is provided with workbench, workbench is provided with rotary table, rotary table top is provided with bearing disc, bearing disc one side is provided with air bearing guide rail, collection jam;The guide rail surface of air bearing guide rail is provided with micropore array, and the bottom of air bearing guide rail is provided with flow guide cavity;Bearing disc top is provided with shovel knife, air knife, rotating frame at intervals, rotating frame is provided with vacuum chuck.Using rotary table, distance adjusting actuator respectively to bearing disc and wafer form rotary drive and inclination control, by air knife, shovel knife and vacuum chuck assembly to wafer array inner circle, outer circle is distributed automatically shovel, transfer operation, after being sent into air bearing guide rail, make wafer be positive pressure air film float to drift state to guarantee not to be physically impacted, then slide into collection jam and be collected, ensure wafer and carrier separation, transfer operation is highly automated, while ensuring wafer quality is intact and the consistency of collection piece sequence, increase the production efficiency of wafer manufacturing industry.

The utility model discloses sapphire wafer packing protection special box utensil, including box body and hinge installation on the box body upper surface one side's box lid, the box body is inside and is set up one row of placing groove, the placing groove is equipped with first cross board and second cross board, and the first cross board is fixed in the one side of placing groove, and the second cross board is slidably arranged in the placing groove, the placing groove is equipped with bottom plate, and the bottom plate slides up and down in the placing groove, the side of bottom plate is equipped with corrugated board close to second cross board, the other end of corrugated board is slidably connected with second cross board, and along second cross board side surface slide up and down, the placing groove is movably equipped with a plurality of vertical boards, and the vertical board with first cross board and second cross board are all inserted joint connection, the vertical board, first cross board and second cross board between are accommodating cavity. Advantageous effect: the placement of different diameter length, different thickness sapphire crystal is suitable, and the adjacent sapphire crystal is cut off by accommodating cavity, and will not collide with each other, avoids the damage.