60results about How to "Realize full color display" patented technology

The invention relates to a color micro display device and a preparation method thereof. A chip comprises a blue-light GaN LED micro-pixel array wafer, a micro lens, a color imaging screen and a drive backboard, wherein the drive backboard is bonded to the blue-light GaN LED micro-pixel array wafer through flip-chip bonding; the wafer bonded with the drive backboard and the color imaging screen are arranged at respective sides of two mirror surfaces of the micro lens respectively; a light-exiting surface on the wafer is opposite to the corresponding mirror surface of the micro lens, so that each LED micro-pixel on the wafer is refracted through the micro lens and is imaged on the color imaging screen. The preparation method comprises preparation of the blue-light GaN LED micro-pixel array wafer, preparation of the color imaging screen and preparation of the chip by the prepared wafer, the imaging screen and the micro lens. The color micro display device has the advantages that the problem of lighting crosstalk in imaged pixels is solved; and meanwhile, full-color display of a GaN LED is achieved under the condition of not increasing the complexity of the GaN LED wafer process.

The invention belongs to the display technology field and discloses a full-color display component for organic and inorganic quantum dot hybridization and preparing method thereof. The display component comprises a light emitting unit fixedly mounted on a substrate wherein the light emitting unit includes three light emitting photon units in blue, green and red respectively; each light emitting photo unit comprises the following elements in sequence: a cathode, an electron transmission layer, a light emitting layer, a hole transport layer, a hole injection layer and an anode. The light emitting layer of the blue light emitting photon unit is of organic materials; the light emitting layers of the red and green emitting photon units are of quantum dot materials; and the electron transport layers of the three light emitting photon units are of inorganic materials. According to the invention, through the use of the high efficiency and stability of the blue organic polymer materials and the high color purity of the green / red quantum dot light emitting layer materials as well as the characteristics of simple processing and in combination with the organic electron transport layer materials and the use of a solution processing method, it is possible to make a full-color display screen with high performance and high display color gamut at a low cost.

The invention relates to the technical field of display, and discloses an organic light emitting device. The organic light emitting device comprises a light emitting unit, wherein the light emitting unit has m types of light emitting wavelengths, is a monochromatic organic light emitting diode or a white organic light emitting diode with an optical filter, at least one organic light emitting diodeis provided with a microcavity structure, the microcavity optical path L of the organic light emitting diode with the optical fiber and the light emitting wavelength Lambda of the corresponding lightemitting unit conform to the following relation expression: L=nLambda, n is more than or equal to 2 and is a positive integer, the n corresponding to the at least one organic light emittingdiode is more than or equal to 3, i is less than or equal to m but more than or equal to 1, and i and m are positive integers. The n-order microcavity effect can be achieved in the organic light emitting diode with the microcavity structure, the n is the positive integer more than or equal to 2, a second-order microcavity, a third-order microcavity, a fourth-order microcavity or higher-order microcavity can be achieved, the microcavity effect is improved, the spectrum is further narrowed, and the color gamut area is further expanded.

The invention relates to a fabrication method of a full-color micro display device. Single-color blue Micro LED microchips are only needed to be transferred onto a substrate by combining a nanoimprinting technology, red or green fluorescent material resin glue layers accurately cover the corresponding blue Micro LED microchips according to special arrangement by a patterning imprinting template which is prepared in advance, the red or green fluorescent material resin glue layers are simulated by the Micro LED microchips, the Micro LED microchips which are not coated with the fluorescent material resin glue layer are simulated, red, green and blue pixel points particularly arranged on surfaces of the microchips are obtained, namely, the full-color display of the Micro LED microchips can beachieved.

An embodiment of the invention discloses a Micro-LED display panel and a manufacturing method thereof, that display panel comprise: a bonding substrate; A first color pixel, a second color pixel and athird color pixel inverted on one side of the bonding substrate and electrically connected with the bonding substrate; Wherein the first color pixel comprises a first light emitting medium layer, thesecond color pixel comprises a second light emitting medium layer, and the third color pixel comprises a third light emitting medium layer; The first luminescent medium layer and the second luminescent medium layer are respectively quantum dot electroluminescent materials, and the third luminescent medium layer is a gallium nitride quantum well layer. According to the invention, a first color pixel and a second color pixel in the LED display panel emit light of the first color and light of the second color respectively through the quantum dot electroluminescent material, The third color pixelemits the light of the third color through the GaN quantum well layer, so that the Micro-crystalline GaN quantum well layer emits the light through the quantum dot electroluminescent material. Full color display of the Micro-LED display panel is achieved.

The embodiment of the invention provides a liquid crystal display panel and a liquid crystal display device, and relates to the technical field of displaying. A plurality of sub-pixels arranged on a first substrate contained in the liquid crystal display panel are divided into a plurality of repeating units arranged in an array mode, each repeating unit comprises a plurality of subunits arranged in an array mode, and a first subunit, a second subunit and a third subunit are arranged in each repeating unit in the line direction and the row direction; each first subunit, each second subunit and each third subunit comprise at least two color sub-pixels and at least two highlight sub-pixels, the total number of the color sub-pixels and the total number of the highlight sub-pixels in all the subunits are same, and the total number of first color sub-pixels, the total number of second color sub-pixels and the total number of third color sub-pixels in all the subunits are same. By means of the liquid crystal display panel and the liquid crystal display device in the technical scheme, the area ratio of the highlight sub-pixels in all the sub-pixels can be increased, and the penetration rate of the display panel is increased.

The embodiment of the invention discloses a micro-LED display panel and a manufacturing method thereof. The Micro-LED display panel comprises a bonded substrate, an electroluminescent Micro-LED pixelarray and a luminescent dielectric layer, wherein the electroluminescent Micro-LED pixel array is reversely arranged on one side of the bonded substrate and is electrically connected with the bonded substrate, each electroluminescent Micro-LED pixel in the electroluminescent Micro-LED pixel array comprises a first kind of sub pixel and a second kind of sub pixel, the luminescent dielectric layer is arranged on one side, far from the bonded substrate of the first kind of sub pixel, and the luminescent dielectric layer is prepared from the materials of at least one of a perovskite photoluminescent material and nano fluorescent powder. The Micro-LED display panel disclosed by the embodiment of the invention can emit self color light through the second kind of sub pixel, and the first kind ofsub pixel can stimulate the luminescent dielectric layer to emit corresponding color light through the light emitted by the electroluminescence; thus, full-color display of the Micro-LED display panelcan be achieved through mutual match among different luminescent colors, and the problem that color display of the Micro-LED display panel is difficult to achieve in the prior art is solved.

The invention relates to the technical field of head-up display, in particular to a head-up display system utilizing a transparent nano-film for imaging display, and particularly provides a head-up display system comprising ultra-thin glass. The head-up display system comprises a projection light source, laminated glass and a transparent nano film, wherein the transparent nano film comprises at least two metal layers; the projection light source is used for generating P polarized light, the laminated glass provided with the transparent nano film has the maximum reflectivity Rmax and the minimum reflectivity Rmin for the P polarized light within the incident angle of 45-72 degrees, and Rmax / Rmin is equal to 1.0-2.0. A clear head-up display image without visual ghosting can be generated, the requirements of high P polarized light reflectivity, high visible light transmittance and low fourth surface visible light reflectivity are met, the head-up display image presents a neutral color, and the color of the head-up display image is richer so as to realize full-color display.

The invention relates to a triode control type hybrid structure full-color display device and a manufacturing method thereof. According to the invention, a low-power variable input signal is respectively applied between a first contact electrode and a second contact electrode SCE1 and between the first contact electrode and a third contact electrode SCE2, a forward bias voltage is respectively applied between the first contact electrode and a fourth contact electrode TCE1 and between the first contact electrode and a fifth contact electrode TCE2; a blue light emitting chip in the unit B is driven to emit blue light, a blue light emitting chip in the unit R is driven to emit blue light so as to excite a red conversion layer to emit red light, a voltage is applied between a cathode and a transparent anode in the unit G, green light is excited, and thus full-color display is achieved. According to the invention, the first triode and the second triode amplify the power of an input signal,so that the light-emitting chip is driven to emit light by using a low-power input signal, the design complexity of a driving circuit of the light-emitting device can be effectively reduced, and the integration level of the display device is improved.

The invention relates to the field of display technology, and discloses an organic electroluminescent device. The organic electroluminescent device comprises a single-color organic light-emitting diode with m different light-emitting wavelengths or a white light organic light-emitting diode provided with an optical filter, wherein at least one organic light-emitting diode with a micro-cavity structure light-emitting wavelength comprises at least two light-emitting layers; the microcavity optical path L of the organic light-emitting diode with the micro-cavity structure and light-emitting wavelength lambda of the corresponding light-emitting unit meet the following relation: L is equal to nlambda, wherein n is larger than or equal to 2, and n is a positive integer; n correspondingto at least one organic light-emitting diode is larger than or equal to 3; i is less than or equal to m and larger than or equal 1; and i and m are positive integers. The organic light-emitting diodewith the microcavity structure is characterized in that n-stage micro cavity effect can be realized, and n is a positive integer which is larger than and equal to 2, so that a two-order microcavity, athree-order microcavity, a four-order microcavity or a higher-order microcavity can be realized; the microcavity effect is enhanced; the spectrum is narrowed further; and the color range area is increased further.

The invention discloses a Micro-LED display with an integrated structure and a preparation method thereof. The Micro-LED display comprises a Micro-LED chip array, and a chip comprises a p-Si substrate, a Micro-LED body, two transistors and a capacitor, wherein the Micro-LED body is of a step structure and comprises a bonding metal layer, a TiO2 / SiO2 DBR, an ITO layer, an Mg-doped p-GaN layer, an Mg-doped p-AlGaN electronic barrier layer, an InGaN / GaN multi-quantum well layer, an InGaN / GaN superlattice stress release layer and a surface-roughened Si-doped n-GaN layer from bottom to top, the upper surface of the Mg-doped p-GaN layer is a step surface, and the body is connected with the substrate through the bonding metal layer. According to the structure, active driving can be realized without transfer of a large number of Micro-LEDs, the crystal quality of the GaN epitaxial layer is improved, and the photoelectric performance of the Micro-LED is improved.

The invention provides a display panel and a preparation method thereof. The display panel comprises an array substrate, a light-emitting layer, a first barrier layer, a color film layer, a flat layerand a second barrier layer. The array substrate is provided with a pixel definition layer. The pixel definition layer comprises a plurality of pixel definition areas and retaining walls arranged among the pixel definition areas. The light-emitting layer is arranged in the plurality of pixel definition areas. The first barrier layer covers the array substrate, the pixel definition layer and the light-emitting layer. A plurality of grooves are formed in the first barrier layer. The color film layer is arranged in the grooves. The flat layer covers the first barrier layer and the color film layer. The second barrier layer is arranged on the flat layer. According to the display panel provided by the invention, the first barrier layer is arranged on the light-emitting layer, so that the performance of the display panel is improved.

An embodiment of the invention discloses a Micro-LED display panel and a method for manufacture that same, the Micro-ED display panel includes: a bonding substrate; Electroluminescence Micro-LED pixelarray is inverted on one side of the bonding substrate and electrically connected with the bonding substrate, wherein, each electroluminescent Micro-LED pixel includes a first class of sub-pixel anda second class of sub-pixels; A luminescent medium lay is located on a side of that first class of sub-pixels away from the bonding substrate, and the material of the luminescent medium layer comprises an organic luminescent material. An embodiment of the invention provides a Micro-LED display panel emits light of its own color through a second class of sub-pixels, and the first class of sub-pixels emits light through an electroluminescent Micro-LED pixel excites the organic luminescent material in the luminescent medium layer to emit light corresponding to the color, so that full color display of the Micro-LED display panel is realized. A problem of difficulty in implementingcolor display of the Micro-LED display panels in the prior art is solved.

The invention relates to the technical field of head-up display, in particular to a head-up display system utilizing a transparent nano-film for imaging display, and particularly provides a head-up display system comprising ultra-thin glass. The head-up display system comprises a projection light source, laminated glass and a transparent nano film, wherein the transparent nano film comprises at least two metal layers, the projection light source is used for generating P polarized light, the distance between the transparent nanometer film and the fourth surface is smaller than or equal to 1.86 mm, and the refractive index of the outer glass plate and / or the inner glass plate is 1.35-1.49. A clear head-up display image without visual ghosting can be generated, the requirements of high P polarized light reflectivity, high visible light transmittance and low fourth surface visible light reflectivity are met, and the defects of reddish color, yellow color and the like of the head-up display image can be eliminated, so that the head-up display image presents a neutral color; and the color of the head-up display image is richer so as to realize full-color display.

The invention discloses a color-convertible flip LED chip and a manufacturing method thereof. The chip comprises a substrate and a light-emitting structure arranged on the front surface of the substrate. A groove is formed in the back surface of the substrate, and the groove is filled with quantum dots. A filtering layer is arranged on the groove, and the filtering layer covers the quantum dots and filters light waves passing through the quantum dots. Light formed by passing through the corresponding quantum dots is emitted from the filtering layer, and light of colors except the quantum dotsis reflected back to one side of the light-emitting structure by the filtering layer, so that no stray light is mixed into the corresponding quantum dots. By filling the groove with the quantum dots of different colors on the same chip, full-color display and single-color display can be achieved. The chip only needs one light-emitting structure, light of different colors can be obtained after light emitted by the same light-emitting structure passes through the quantum dots of different colors, and the size of the display screen is thus reduced.

The invention relates to the field of display technology, and discloses an organic electroluminescence device. The organic electroluminescence device comprises m kinds of light emitting units with different light emitting wavelengths, the light emitting unit is a monochromatic light organic light emitting diode, at least one organic light emitting diode having a microcavity structure is provided with at least two light emitting layers, and the thicknesses of first electrode layers in the organic light emitting diodes corresponding to the light emitting units with different light emitting wavelengths are not the same; a microcavity optical path L of the organic light emitting diode having the microcavity structure and the light emitting wavelength lambada of the corresponding light emittingunit meet the following relational expression: Li=ni lambada i; wherein n is greater than or equal to 2, n is a positive integer, and n corresponding to at least one organic light emitting diode is greater than or equal to 3. That is, an n-order microcavity effect can be realized in the organic light emitting diode having the microcavity structure, and n is a positive integer greater than or equal to 2, in this way, a second-order microcavity, a third-order microcavity or a higher-order microcavity can be achieved, the microcavity effect is enhanced, the spectrum is further narrowed, and thusthe color gamut area is increased.

The invention discloses a mini LED display panel and a preparation method thereof. The mini LED display panel comprises a flexible layer; a thin film transistor circuit arranged on the surface of oneside of the flexible layer; and a plurality of mini led chips uniformly distributed on the surface of one side, far away from the flexible layer, of the thin film transistor circuit. The beneficial effects of the invention are that: according to the mini LED display panel and the preparation method thereof, the mini LED chips are integrated on the flexible layer, so that full-color display of themini LED display panel is realized, and the thickness of the mini LED display panel is reduced; and the transfer layer covers the mini LED chips in a transfer printing or ink-jet printing mode, so that full-color display of the mini LED display panel is achieved, meanwhile, the preparation steps of the mini LED chip can be reduced, and the preparation cost of the mini LED display panel is reduced.

The invention relates to a semiconductor hybrid full-color tripolar light-emitting tube display device and a manufacturing method. The semiconductor hybrid full-color tripolar light-emitting tube display device comprises a substrate, a first contact electrode, a B unit, a G unit and an R unit, wherein the B unit, the G unit and the R unit are arranged on the substrate, distributed in the transverse direction and used for displaying blue light, green light and red light respectively; a low-power variable input signal is respectively applied between the first contact electrode and a second contact electrodes in the B unit and the G unit, and a forward bias voltage is respectively applied between the first contact electrode and a third contact electrodes in the B unit and the G unit so as todrive the B unit and the G unit to excite blue light and green light; and a voltage is applied between a cathode and a transparent anode in the R unit to excite red light, so that full-color display is realized. According to the invention, the light-emitting chip can be driven to emit light by adopting a low-power input signal, so that semiconductor hybrid full-color display is realized.

The invention relates to a full-color triode light-emitting tube display device and a manufacturing method. The full-color triode light-emitting tube display device comprises a buffer layer, a first semiconductor layer arranged on the buffer layer, a first contact electrode arranged on the first semiconductor layer, an R unit used for displaying red light, a G unit used for displaying green lightand a B unit used for displaying blue light, wherein a low-power variable input signal is applied between the first contact electrode and a second contact electrode in the R unit, the G unit and the Bunit respectively, and a forward bias voltage is applied between the first contact electrode and a third contact electrode in the R unit, the G unit and the B unit respectively, so that the R unit, the G unit and the B unit are enabled to emit light. According to the invention, the light-emitting chip can be driven to emit light by using a low-power input signal to excite a color conversion layer, so that full-color display is realized.

The invention discloses liquid-packaged high-power three-primary-color LED chip array distribution and production. According to the invention, a chip array is arranged on a substrate, odd-numbered lines of three-primary-color LED chips are arranged according to a sequence of RBG, even-numbered lines of three-primary-color LED chip are arranged according to a sequence of BGR, the ratio of numbers of the three types of chips both in an overall scope and a local scope can be kept to be 1:1:1, and the chips of the same color in the three-primary-color LED chip array are connected in series and / or in parallel according to an electrode array mode; and then the substrate is placed in a metal shell, a transparent baffle plate is arranged at an opening of the shell, then the part above the chips is filled with a light transmission insulating liquid, and the light transmission insulating liquid is sealed in a metal cavity through the transparent baffle plate. The transparent liquid takes heat away quickly through convection and transfers the heat to the metal shell, and the heat quickly spreads to the air, so that the heat dissipation efficiency is higher. A white-light LED realized adopting the liquid-packaged high-power three-primary-color LED chip array distribution and production is good in light emitting uniformity and high in display index.

The invention relates to a monolithic LCD projection structure, a projector and a projection method, and belongs to the technical field of projection display. The monolithic LCD projection structure comprises a solid-state light source, a black-and-white LCD screen, a light receiving lens and a projection lens, wherein the solid-state light source is used for generating RGB red, green and blue three primary colors, the three primary colors generated by the solid-state light source are respectively and independently irradiated on the black-and-white LCD screen, penetrate through the black-and-white LCD screen, are irradiated on the light receiving lens, are converged by the light receiving lens, are irradiated on the projection lens, and form a projection picture through the projection lens. The invention further provides a monolithic LCD projector and a monolithic LCD projection method. According to the monolithic LCD projection structure, the brightness of a monolithic LCD projection product can be greatly improved, and the problem that an existing monolithic LCD projection product is insufficient in brightness is solved.

The embodiment of the invention discloses a display panel and a manufacturing method thereof. A display area of the display panel comprises a first sub-pixel area, a second sub-pixel area and a third sub-pixel area. The display panel further comprises a driving substrate, a blue light emitting device layer and a color conversion layer, and the blue light emitting device layer comprises a first blue light emitting device, a second blue light emitting device and a third blue light emitting device which are arranged on one side of the driving substrate. The color conversion layer comprises a first color conversion sub-layer arranged in the first sub-pixel region and a second color conversion sub-layer arranged in the second sub-pixel region, the first color conversion sub-layer is arranged on each first blue light emitting device, and the second color conversion sub-layer is arranged on each second blue light emitting device; according to the micro-LED display panel, the step that the blue light Micro-LED and the red light Micro-LED need to be transferred in batches and in large quantities can be effectively avoided, the service life of the red light Micro-LED and the service life of the green light Micro-LED are effectively prolonged, and the full color of the Micro-LED display panel is achieved.

The invention relates to the technical field of display, and discloses an organic electroluminescent device. The organic electroluminescent device comprises m luminescent units with different luminescent wavelengths; each luminescent unit is a monochromatic light organic luminescent diode or a white light organic luminescent diode provided with a light filter; a luminescent layer inside each organic luminescent diode of a microcavity structure comprises a main body material and an object material, the main body material comprises a thermal activation delay (TADF) material, and the object material is a fluorescent material; and the relation between the microcavity L and the luminescent wavelength lambda of each organic luminescent diode of the microcavity structure meets the relational expression that Li=ni lambda i. Namely, a n-step microcavity effect can be realized in each organic luminescent diode of the microcavity structure, n is a positive integer of greater than or equal to 2, so that a two-step microcavity, a three-step microcavity, a four-step microcavity or a higher-step microcavity can be realized, the effect of the microcavity is strengthened, the spectrum is further narrowed, and then the color gamut area is increased.

The present disclosure disclose a reflective projection screen, a transmissive projection screen and a projection system, the reflective projection screen includes a protective layer, excitation and reflection layers, An excitation layer is located between the protective layer and the reflective layer, excitation particles with different sizes are formed on the excitation layer, Under the irradiation of external excitation light, exciting different shades of light, so that the reflective projection screen can emit different primary colors of light under the illumination of external excitationlight, External excitation light is incident on the protective layer, After passing through the protective layer and incident on the excitation layer, the excitation particles with different sizes inthe excitation layer emit different color light under the excitation of the external excitation light, and incident on the reflection layer, the light reflected by the reflection layer excites the excitation particles in the layer to emit color light again, and the color light emits out of the reflection projection screen after passing through the protective layer. A projection system provided bythe present disclosure includes the above-described reflective projection screen. Another projection system provided by the present disclosure includes a transmissive projection screen.

This invention discloses one inorganic electroluminescence display and its process method and relates to the relative technique field suitable for alternating driving, wherein, the display upper dielectric layer is thicker than the down one; the dielectric layer touching to the light layer adopts high dielectric parameter materials; the light layer is mixed with light semiconductor layer; the said upper dielectric layer is formed by multiple compound medium film. The invention method processes some parts by annealing procedure to omit one light layer annealing process.

The invention discloses a display device and a preparation method thereof, and belongs to the technical field of semiconductor devices.The preparation method of the display device comprises the steps that wavelength conversion layers are provided, and the wavelength conversion layers comprise the first wavelength conversion layer and the second wavelength conversion layer which are provided respectively; the thickness of the second wavelength conversion layer is greater than that of the first wavelength conversion layer; the first wavelength conversion layer is firstly transferred to a pixel point through the substrate, and then the second wavelength conversion layer is transferred to other pixel points through the substrate; according to the invention, the wavelength conversion layer and the wavelength conversion layer transferred according to the thickness sequence are respectively provided, so that the preparation of the display device for transferring the wavelength conversion layer according to the sequence is realized. The display device provided by the invention comprises at least two wavelength conversion layers with different thicknesses, so that no gap exists between the wavelength conversion layers and the pixel points, and the combination is tighter.

The invention relates to a kind of organic electrization irradiance subassembly, it possesses irradiance layer, the irradiance layer includes macromolecule conducting main material which can be solidified by illumination, fits for colored display by spin coating method, and the irradiance layer includes at least one little molecule irradiance material to realize high irradiance efficiency. The subassembly can not be limited by molecular weight distributing of macromolecule conducting main material on color fineness.

The embodiment of the invention provides a quantum dot display panel and a quantum dot display device. The quantum dot display panel comprises a backlight module composed of an ultraviolet light backlight module and a white light backlight module, a quantum dot color film structure and a white light transmitting area located on the light emitting side of the backlight module. The quantum dot color film structure covers the ultraviolet backlight module, and the white light transmitting area covers the white light backlight module; the vertical projections of a plurality of red light quantum dot substructures of the red light quantum dot color film structure, a plurality of green light quantum dot substructures of the green light quantum dot color film structure, a plurality of blue light quantum dot substructures of the blue light quantum dot color film structure and a plurality of white light transmitting sub areas of the white light transmitting area on the plane where the backlight module is located are not overlapped. According to the technical scheme provided by the embodiment of the invention, the use of a color filter is avoided, and the light emitting efficiency is improved; the quantum dot performance is optimized, and the reliability of the color film structure is ensured; the display brightness can be enhanced directly through the white light transmitting area, and maximum utilization of backlight source energy is achieved.