The invention discloses a Micro-LED display with an integrated structure and a preparation method thereof. The Micro-LED display comprises a Micro-LED chip array, and a chip comprises a p-Si substrate, a Micro-LED body, two transistors and a capacitor, wherein the Micro-LED body is of a step structure and comprises a bonding metal layer, a TiO2 / SiO2 DBR, an ITO layer, an Mg-doped p-GaN layer, an Mg-doped p-AlGaN electronic barrier layer, an InGaN / GaN multi-quantum well layer, an InGaN / GaN superlattice stress release layer and a surface-roughened Si-doped n-GaN layer from bottom to top, the upper surface of the Mg-doped p-GaN layer is a step surface, and the body is connected with the substrate through the bonding metal layer. According to the structure, active driving can be realized without transfer of a large number of Micro-LEDs, the crystal quality of the GaN epitaxial layer is improved, and the photoelectric performance of the Micro-LED is improved.