80results about How to "Achieve patterning" patented technology

The invention discloses an anisotropic etching method of graphite or grapheme, which is used for realizing crystal orientation of graphene, graphene cutting and patterning. The method comprises the following steps of: performing anisotropic etching on the surface of graphite or grapheme by adopting hydrogen-containing plasma, and forming a plurality of regular hexagonal holes on the surface of graphite or grapheme. All the hexagonal holes have the same orientation, the orientation is matched with the crystal orientation of graphene, etched edges have atomic scale smoothness, and all the edge structures are zigzag configurations. The invention overcomes the limitations existing in the traditional etching method of graphite or grapheme and realizes cutting and patterning graphene with controllable size and atomic scale smooth edges.

The invention provides a flexible stretchable conductive circuit, a preparation method and use thereof. The invention also provides double-sided wiring, multilayer board, flexible display, flexible electronics, and/or sensor comprising the flexible stretchable circuit described above. The method for preparing flexible stretchable conductive circuit provided by the invention is simple and rapid, and is generally applicable to various substrate materials, the liquid metal is used in a small amount, does not require additional external force, and the pattern does not generate cracks, the wire width is controllable, has a high resolution and it's very suitable for mass production.

The invention provides a single aligned carbon nano tube jet-printing arrangement method. The method comprises the steps that a substrate is modified with octadecyltrichlorosilane (OTS), so that the surface of the substrate has a hydrophobic property; precise control over the thin film position, the aligned density and patterning of aligned carbon nano tubes is achieved on the functional hydrophobic substrate through ink-jet printing, and a carbon nano tube thin film which is uniform in density and consistent in orientation and has different patterns is arranged. By means of the method, the carbon nano tube arrangement area of the size from several micrometers to the wafer level can be effectively controlled; the problems can be solved that in all existing arrangement methods, the arrangement position, the arrangement orientation, the arrangement density and the thin film array patterning of one-dimensional nano materials on the substrate cannot be efficiently and precisely controlled;the method can be widely used for preparing various high-performance photoelectric devices, logic circuits and functional thin films based on the carbon nano tubes, and the method also has a wide application prospect in the field of flexible wearable nano devices.

Provided in the invention is a method for utilizing ultraviolet oxidation in implementing and regulating graphene film patterning, comprising: a step 1: utilizing a xenon lamp excimer ultraviolet oxidation method and a hard mask in implementing graphene film microstructure graphic patterning; a step 2: by applying a nonuniform magnetic field in the perpendicular direction to the surface of a graphene film, controlling oxygen excitons to move in the direction of the magnetic field towards the graphene film, thus enhancing the directionality of etching the graphene film in the perpendicular direction, and increasing the quality of graphene film microstructure patterning; and a step 3: by adjusting the strength and direction of the magnetic field (such as in the horizontal direction), controlling the directionality of the movement of the oxygen excitons, and regulating the shape being etched on the graphene film graphic structure, thus achieving the goal of regulating graphene film patterning. The method of the invention implements and regulates a micrometer graphic structure array, is suitable for large-area graphene film patterning, free of photoresist contamination, and inexpensive, and provides a patterned graphene film of high quality.

The invention discloses a large-area disulfide hafnium thin film preparation method based on an atomic layer deposition process. The method mainly comprises the following steps that (1), a substrate is put into an atomic layer deposition system reaction cavity; (2), vacuumizing is performed on the atomic layer deposition system reaction cavity; and (3), a precursor is introduced into the atomic layer deposition system reaction cavity alternately and is made to generate self-limiting chemical reaction on the substrate surface and grow a large-area disulfide hafnium thin film. By means of the large-area disulfide hafnium thin film preparation method based on the atomic layer deposition process referred by the invention, the fact that the prepared two-dimensional disulfide hafnium thin film has the advantages of precisely controllable atomic-scale thickness, large area, uniformity and the like can be realized, and the reaction temperature is low, flexible substrates can be compatible, andpatterning of the prepared thin film can be realized in combination with subsequent photoetching and other semiconductor processes.

The invention relates to the field of conductive materials and discloses a transparent conductive substrate, a preparation method and an application thereof. The method comprises the steps of (a) uniformly coating the surface of a transparent substrate with a nano silver wire dispersion liquid and performing pre-baking to obtain a substrate coated with a nano silver wire coating, (b1) performing pattern exposure treatment on the substrate coated with the nano silver wire coating and performing cleaning development and heat curing to obtain the transparent conductive substrate, or (b2) performing whole surface exposure treatment on the substrate coated with the nano silver wire coating and performing heat curing to obtain the transparent conductive substrate. The prepared transparent conductive substrate has good conductivity and light transmittance, a large-area transparent conductive substrate can be prepared by the method, the patterning can be directly realized, and the applicationof multiple scenes and complicated scenes is satisfied.

The invention belongs to the technical field of two-dimensional semiconductor film preparation, and particularly relates to a large-scale preparation and patterning method of a two-dimensional material semiconductor film. The method comprises the following steps of pre-treating a substrate; photoetching a target pattern on the pretreated substrate by using negative photoresist; preparing a two-dimensional semiconductor film on the substrate with a photoresist pattern by using a solution self-assembly technology, wherein the substrate is firstly soaked in a poly(diallyldimethylammonium chloride) aqueous solution and then soaked in a MoS2 aqueous solution, and the process can be repeated for many times; and soaking the film obtained on the substrate in acetone to remove the photoresist, andfinally, obtaining the target MoS2 pattern. The method has the advantages that the preparation method is simple and can be operated on any substrate; the thickness of the film is controllable, and thepatterning can be realized; reaction conditions are mild, and the method has wide application space in the field of high-performance two-dimensional semiconductor film electronic devices.

The invention provides a novel microcontact printing system for cell patterning. The system comprises oligomeric dopamine formed by dopamine monomers through polymerization. The molecular weight of the oligomeric dopamine is between 1000 and 10000 D; and a structural formula is shown in the description. A substrate is firstly subjected to chemical modification treatment to obtain a bioadhesion-resistant inert substrate; then, a water solution of the oligomeric dopamine is prepared; a stamp is prepared; next, the stamp is soaked into the water solution of the oligomeric dopamine; and next, thestamp adsorbing the oligomeric dopamine is stamped onto the inert substrate, so that a pattern on the stamp is obtained from the surface of the substrate. The patterning substrate can also be used forcell patterning growth. The realization of the system is simple. The existing technology for cell patterning is simplified.

The invention discloses a manufacturing method of a nano silver wire transparent conductive film with customizable patterns. Patterning of a nano silver nanowire transparent conductive film is realized by utilizing the change of stripping force between coating liquid with a UV irradiation viscosity reduction function and a base film before and after UV irradiation and combining an adhesive suitable for the nano silver nanowire conductive film and a flexible transparent optical adhesive, and the patterned nano silver nanowire transparent conductive film taking the flexible transparent optical adhesive as a substrate is obtained. The process is simple, the product yield is higher, and the obtained conductive film has better optical performance and flexibility.

The invention discloses a perovskite light-emitting film layer, a preparation method thereof and a display panel. The perovskite light-emitting film layer comprises a substrate and a perovskite film layer. The preparation method of the perovskite light-emitting film layer comprises the steps of providing the substrate and forming a patterned regular light-emitting structure on the upper surface ofthe substrate. The method has the technical effects that the spontaneous patterning of the block copolymer film layer is realized through the induction treatment of the block copolymer; and on the basis, the patterning of the perovskite film layer is realized, and the precise patterning of the perovskite film layer is realized.

The invention provides an array substrate and a preparation method thereof, and belongs to the technical field of display. The preparation method of the array substrate comprises the steps of: forminga driving circuit layer, a first electrode layer, a pixel defining layer, a first pattern definition layer and an organic light-emitting material layer sequentially on one side of a substrate, wherein the driving circuit layer comprises a first driving circuit and a second driving circuit, the first electrode layer comprises an adapter electrode electrically connected to the first driving circuitand a pixel electrode electrically connected to the second driving circuit, the pixel defining layer is provided with a connecting via hole, the connecting via hole exposes at least part of the adapter electrode, and the first pattern definition layer covers the connecting via hole; removing the first pattern definition layer to form a second pattern definition layer and a second electrode layersequentially, and making the second pattern definition layer surround the connecting via hole, wherein the second electrode layer comprises a common electrode and a fingerprint recognition electrode which are isolated. According to the preparation method of the array substrate, a self-capacitive fingerprint sensor is embedded into an OLED display panel.

The invention relates to a preparation method of a nanoscale micro structure. The preparation method comprises includes the following steps that: a carbon nanotube structure is provided, wherein the carbon nanotube structure includes a plurality of orderly-arranged carbon nanotubes; the carbon nanotube structure is suspended, and a prefabricated layer is arranged on the surface of the carbon nanotube structure, and the thickness of the prefabricated layer on the surface of each carbon nanotube ranges from 3 nanometers to 50 nanometers, and therefore, a carbon nanotube composite structure can be formed; the carbon nanotube composite structure is arranged on the surface of a substrate so as to form a mask layer, and a plurality of micropores are formed in the mask layer, and a part of the surface of the substrate is exposed; and the substrate is subjected to dry etching, so that a micro structure can be formed on the surface of the substrate.

The invention discloses a production method of a metal micro-nano structure based on laser interference induced cross-linking reaction and belongs to the technical field of optoelectronic materials and devices. The production technique includes: subjecting polymers to cross-linking reaction through organic semiconductor polymer material coated with a metal film by laser irradiation, forming a surface relief structure, and texturizing the attached metal film. The production method has the advantages of low cost, high efficiency, capability of producing large-area metal structures with plasma resonance spectral response, and the like.

The invention belongs to the technical field related to ductile circuit manufacturing, and discloses roll-to-roll patterning equipment based on die cutting. The equipment comprises an unwinding roller, a flexible belt, a die cutting mechanism, a tension detection mechanism, a stripping mechanism and a winding mechanism, wherein the unwinding roller, the die cutting mechanism, the tension detectionmechanism, the stripping mechanism and the winding mechanism are sequentially arranged at intervals; one end of the flexible belt is accommodated in the unwinding roller, and the other end of the flexible belt sequentially penetrates through the die cutting mechanism, the tension detection mechanism and the stripping mechanism to be connected to the winding mechanism; the die cutting machine is used for patterning the flexible belt; the tension detection mechanism is used for carrying out tension detection on the flexible belt and feeding back the detection results to the winding mechanism; the stripping mechanism is used for stripping the patterned flexible belt; and the winding mechanism is used for collecting a stripped finished product roll and a stripped waste product roll and adjusting the flexible belt according to the detection results, so that the tension of the flexible belt is made to be within a preset range. According to the roll-to-roll patterning equipment based on thedie cutting, the production efficiency is improved, and the cost is low.

The invention belongs to the technical field of electronic device preparation, and provides a flexible conductive metal pattern, a preparation method and application of the flexible conductive metal pattern, and a conductive material. The preparation method of the conductive metal pattern comprises the following steps: mixing metal nanopowder having been subjected to or not subjected to surface silanization treatment, a polydimethylsiloxane prepolymer and a curing agent with or not with a first solvent to obtain ink; printing the ink on a flexible substrate, and curing the flexible substrate to obtain a printed substrate; and immersing the printed substrate into a second solvent which is mutually soluble with water and can swell ink for swelling treatment, then transferring the substrate into a metal salt solution to realize metallization of the pattern via a chemical plating process, and then conducting drying to obtain the conductive metal pattern. The preparation method provided by the invention is simple in process and low in cost, a printing and solution treatment method compatible with an industrial preparation method is adopted, and the prepared flexible conductive metal pattern is high in binding force with a substrate, high in conductivity and high in printing precision.

The invention belongs to the technical field of preparation and application of patterned colloidal photonic crystals, and particularly relates to a method for rapidly preparing a colloidal photonic crystal array by utilizing laser direct writing. The method comprises the steps of carrying out modification treatment on the surface of a substrate material so as to enable the surface of the substrateto have super-hydrophilicity or super-hydrophobicity; preparing a colloidal photonic crystal film on the substrate; and placing the substrate with the colloidal photonic crystal film deposited on thesurface under a laser, etching a pre-designed pattern, and cooling at the room temperature. According to the invention, the laser direct writing method is used for preparing the colloidal photonic crystal array chip for the first time, and the preparation method is easy to operate, extremely short in consumed time and wide in application range. The invention provides a feasible new method for rapid and accurate patterned surface preparation in the field of material science by combining the advantages of a rapid and efficient laser direct writing technology and the characteristic that the physical and chemical properties of a polymer photonic crystal material are changed when the polymer photonic crystal material is heated.

The invention discloses a preparation method of graphene paper. The preparation method includes following steps: (1), electrospinning a nanofiber membrane substrate; (2), electrospraying to a composite graphene oxide thin film; (3), removing a substrate; (4), reducing graphene oxide. Compared with existing methods, the preparation method has the advantages that the preparation method is simpler to operate and low in cost, the graphene paper prepared by the method is uniform in thickness, has good electrochemical performance and easy to separate from a substrate material, large-area graphene paper can be prepared by the method, patterning of the graphene paper can be realized directly in the process of preparation, and application field of materials is expanded.

The invention provides a manufacturing method of a quantum dot substrate. The manufacturing method comprises the following steps: manufacturing an electrode layer on a substrate; coating the substrate with a mixed solution containing quantum dots, and covering the electrode layer; electrifying the electrode layer, wherein the quantum dots in the mixed solution are gathered on the electrode layer under the driving of an electric field, and a quantum dot layer is formed; removing substances except the quantum dots in the mixed solution, and obtaining the quantum dot substrate. The electric field generated after the electrode layer is electrified is utilized to drive the quantum dot material to directionally deposit, so that patterning of the quantum dot layer is realized, the manufacturing process of the quantum dot substrate is simplified, the utilization rate of the quantum dot material is improved, and the manufacturing cost is reduced.

The invention provides a laser-induced graphene paper heater and application thereof, and belongs to the technical field of heaters. The laser-induced graphene paper heater comprises a graphene paper,electrodes are pasted to the two ends of the graphene paper respectively, the joints of the electrodes and the graphene paper are coated with conductive silver paint, and the graphene paper is prepared by the laser-induced reduction of a polyimide paper. The graphene paper heater is larger in heating temperature range, high in heating efficiency and high in temperature rising speed. Furthermore,the patterned graphene paper is obtained by one-time processing through the laser digital customized design and manufacturing, so that the patterned graphene paper heater is convenient to further prepare; and the temperature region regulation and control can be realized by changing an equivalent circuit connection mode and a region area mode, so that the graphene paper heater can be applied to theaspects of wearable equipment, household heating, industrial heating equipment, thermosetting composite material low-energy-consumption curing molding and the like, and is wide in application prospect.