Large-area disulfide hafnium thin film preparation method based on atomic layer deposition process

Abstract

The invention discloses a large-area disulfide hafnium thin film preparation method based on an atomic layer deposition process. The method mainly comprises the following steps that (1), a substrate is put into an atomic layer deposition system reaction cavity; (2), vacuumizing is performed on the atomic layer deposition system reaction cavity; and (3), a precursor is introduced into the atomic layer deposition system reaction cavity alternately and is made to generate self-limiting chemical reaction on the substrate surface and grow a large-area disulfide hafnium thin film. By means of the large-area disulfide hafnium thin film preparation method based on the atomic layer deposition process referred by the invention, the fact that the prepared two-dimensional disulfide hafnium thin film has the advantages of precisely controllable atomic-scale thickness, large area, uniformity and the like can be realized, and the reaction temperature is low, flexible substrates can be compatible, andpatterning of the prepared thin film can be realized in combination with subsequent photoetching and other semiconductor processes.

Description

Technical field: [0001] The invention relates to the field of new semiconductor materials, in particular to a method for preparing a large-area hafnium disulfide thin film based on an atomic layer deposition process. Background technique: [0002] As an important member of the family of transition metal dichalcogenides (TMDs), hafnium disulfide (HfS) in group IVB transition metal dichalcogenides (IVB-TMDs) 2 ) in addition to the advantages of TMDs, but also has more excellent properties. First, theoretical calculations show that HfS 2 Has up to 1833 cm at room temperature 2 V -1 the s -1 The carrier mobility and the sheet current density of 650μA / μm. Second, the monolayer HfS 2 The theoretically calculated band gap is only 1.23eV, and the narrow band gap makes it very suitable for optoelectronic devices with wide spectral response; moreover, similar to the formation of SiO by oxidation in the silicon process 2 Insulation layer, HfS 2 High-quality ultra-thin high-k di...

AI Technical Summary

Problems solved by technology

However, the current preparation of atomically thick HfS 2 The methods are mainly limited to mechanical stripping method, liquid phase stripping method and chemical vapor deposition method, etc.

There are still many problems in these methods, such as: poor compatibility with subsequent device preparation processes, the prepared HfS 2 The size is small, the thickness is difficult to control accurately, the surface is easy to modify or residual impurities, and the preparation efficiency is low, so it is not suitable for the preparation of large-area, uniform, and precisely controllable thickness of two-dimensional HfS 2 thin film, which in turn confines the HfS 2 Applications in the field of high-performance electronic devices and optoelectronic devices