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A method for self-limiting and precise etching of silicon and its special device

A self-limiting and accurate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of inability to achieve three-dimensional (lateral processing, etc., achieve the effect of lateral accurate etching and reduce equipment cost)

Active Publication Date: 2021-05-25
JIANGSU LEUVEN INSTR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] 2) This method cannot achieve three-dimensional (transverse processing) due to the directionality of ion removal, which will be limited in the field of three-dimensional processing such as nanowire processing in the future

Method used

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  • A method for self-limiting and precise etching of silicon and its special device
  • A method for self-limiting and precise etching of silicon and its special device
  • A method for self-limiting and precise etching of silicon and its special device

Examples

Experimental program
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Effect test

Embodiment 1

[0036] A method for self-limiting and precisely etching silicon, comprising the following steps:

[0037] 1) Formation of self-limiting oxide layer Si-Br on the Si surface;

[0038] 2) Removal of excess Br-based atmosphere;

[0039] 3) Transfer to high temperature platform to remove Si-HBr;

[0040] 4) Repeat steps 1)~3) to achieve precise control of the etching amount.

[0041] The special device is similar to ordinary semiconductor vacuum processing equipment, such as figure 1 As shown, there are also transfer modules (manipulators) and process modules. The difference is that there are two bases with different temperatures in the process module, which are low-temperature bases and high-temperature bases. The Br-based treatment on the surface of Si is carried out on the low-temperature base. (step 1), 2)), after completing the corresponding steps, it is transported by the robot to the high-temperature base to remove the SiBrx product (step 3)). Cycle through both pedesta...

Embodiment 3

[0054] On the basis of Embodiment 1, the hard mask is omitted, such as image 3 As shown, but the height compensation should be calculated in advance, and the expected nanoscale lines or columns can also be obtained, and the precise nanoscale structure can be obtained without advanced photolithography technology.

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Abstract

The invention discloses a method and a special device for self-limiting and precise etching of silicon, comprising the following steps: 1) forming a self-limiting oxide layer Si-Br on the surface of Si; 2) removing excess Br-based atmosphere; 3) passing to high temperature 4) Repeat steps 1) to 3) to achieve precise control of the etching amount. The self-limiting and precise silicon etching method and its special device of the present invention not only have the self-limiting ability at the atomic level, but also can realize three-dimensional (horizontal and vertical processing) processing, and the control ability of the equipment itself does not need to be as good as the existing technical solutions. high.

Description

technical field [0001] The invention belongs to the technical field of manufacturing semiconductor chips or nano-microstructures, and in particular relates to a method for self-limited and precise etching of silicon and a special device thereof. Background technique [0002] An integrated circuit (integrated circuit) is a tiny electronic device or component. Using a certain process, the transistors, resistors, capacitors, inductors and other components required in a circuit are interconnected, and they are fabricated on a small or several small semiconductor wafers or dielectric substrates, and then packaged in a tube. , and become a microstructure with required circuit functions; all the components in it have been structurally integrated, making electronic components a big step towards miniaturization, low power consumption, intelligence and high reliability. It is represented by the letter "IC" in the circuit. The inventors of the integrated circuit are Jack Kilby (germa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3213H01L21/67
CPCH01L21/32137H01L21/67011
Inventor 许开东
Owner JIANGSU LEUVEN INSTR CO LTD
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