The invention discloses a WS2 (Er < 3 + > + Yb < 3 + >) / WSe2 (Er < 3 + > + Yb < 3 + >)
optical detector based on a
rare earth ion co-
doping technology, and relates to the field of a two-dimensional material
rare earth ion co-
doping technology and a two-dimensional material
microcell fixed-point transfer technology, a WS2 (Er < 3 + > + Yb < 3 + >) layer synthesized by a
chemical vapor deposition method is successfully transferred to a WSe2 (Er < 3 + > + Yb < 3 + >)
surface layer by using a
microcell fixed-point transfer method, and a WS2 (Er < + > Yb) / WSe2 (Er < + > Yb) vdW
heterojunction is prepared; the method comprises the following steps: sequentially spin-
coating LOR
photoresist and S1805
photoresist on the surface of a sample 1, respectively carrying out soft baking treatment to obtain a sample 1, carrying out
laser direct writing on a selected area to obtain a sample 2, removing metamorphic
photoresist from the obtained sample 2 by using a developing solution, cleaning to obtain a sample 3, plating
chromium and gold on the sample 3 by using a magnetron
sputtering technology to obtain a sample 4, and carrying out
drying to obtain a sample 5; and soaking the sample IV in
acetone to dissolve the photoresist, and stripping a redundant
metal layer under a
microscope to obtain the Van der Waals
heterojunction electrode device. Therefore, the invention provides the WS2 (Er < 3 + > + Yb < 3 + >) / WSe2 (Er < 3 + > + Yb < 3 + >)
light detector based on the
rare earth ion co-
doping technology, the rare earth doping concentration of the two-dimensional material is improved, and excellent photoelectric properties of the WS2 (Er < 3 + > + Yb < 3 + >) and WSe2 (Er < 3 + > + Yb < 3 + >) two-dimensional
semiconductor material are obtained.