334 results about "Laser direct writing" patented technology

The invention discloses a fiber bragg grating femtosecond laser direct writing system and method based on light field regulation and control. The system comprises a femtosecond laser source, a polarization control module, a light beam expanding module, a light field modulation module, a 4f filtering imaging module, an oil immersed objective lens, a precision positioning and optical fiber clamping module, an observation module and a computer control module. The method comprises the following steps: firstly, fixing a standard single-mode optical fiber to be processed on a three-dimensional precision displacement platform; then programmable wavefront modulation is carried out on the femtosecond laser through a light field modulation module, and a multi-focus array is generated; then focusing the multi-focus array into the fiber core through an oil-immersed objective lens to realize one-time parallel inscribing of a plurality of refractive index modulation RIM regions; and finally, the computer control module controls the three-dimensional precision displacement platform to move at a constant speed in the axial direction of the optical fiber, and parallel integrated inscribing of a plurality of FBG structures is completed. According to the invention, the inscribing precision and inscribing efficiency of fiber bragg grating femtosecond laser direct writing are improved.

The invention relates to a moisture power generation device and a preparation method and application thereof, and belongs to the technical field of new energy materials. The moisture power generation device comprises a first electrode, a second electrode, a photo-initiation hydrogel active material and a container, the second electrode and the photo-initiation hydrogel active material are sequentially loaded in a container; the first electrode covers the surface of the photo-initiation hydrogel active material; the first electrode comprises a carbon surface electrode with a porous structure and a thermal initiation hydrogel active material loaded on the surface of the carbon surface electrode; the carbon surface electrode with the porous structure is obtained by carbonizing the carbonizable polymer film through laser direct writing. The moisture power generation device has the advantages of being easy to assemble, suitable for large-scale production, capable of continuously generating power and high in power generation efficiency.

The invention provides a gas sensor and a method for preparing the gas sensor through laser direct writing. The method comprises the following steps: enabling a metal electrode to be in contact with laser direct writing ink, wherein the laser direct writing ink comprises a nickel source, a porous structure guiding agent and a solvent; laser irradiates a specified contact area of the metal electrode and the laser direct-writing ink, so that the metal electrode absorbs the laser to generate heat so as to form a hydrothermal reaction area in the specified contact area, and the laser direct-writing ink in the hydrothermal reaction area is subjected to a hydrothermal reaction, so that porous nickel hydroxide grows on the metal electrode, and a precursor structure is obtained; and carrying out annealing treatment on the precursor structure so as to convert the porous nickel hydroxide into porous nickel oxide, thereby obtaining the gas sensor. The gas sensor provided by the invention has the porous nickel oxide which has a relatively large specific surface area, so that the effective contact area between the gas sensor and target gas can be increased, and the gas responsivity of the gas sensor is improved.

The invention discloses an all-fiber structure pulse laser based on a superfine single-crystal fiber and a preparation method thereof. The all-fiber structure pulse laser comprises a gain single-crystal fiber and a pulse modulation single-crystal fiber, and the gain single-crystal fiber and the pulse modulation single-crystal fiber form a superfine single-crystal fiber heterogeneous bonding structure through thermocompression bonding; the gain single-crystal optical fiber serves as a laser gain medium, the pulse modulation single-crystal optical fiber serves as a saturable absorber, the gain single-crystal optical fiber is provided with a high-reflection grating, the high-reflection grating and an oblique-angle low-reflection end arranged at the tail end of the pulse modulation single-crystal optical fiber form a resonant cavity, and pump light is input into the gain single-crystal optical fiber and enters the resonant cavity through the high-reflection grating. And the oblique-angle low-reflection end outputs pulse laser. The gain section and the modulation section are fused into an integrated structure through the superfine single crystal optical fiber bonding technology, the high-reflection grating is inscribed through the femtosecond laser direct writing technology, low-reflection-mirror oblique angle processing is carried out at the output end, space coupling loss is eliminated, and all-optical-fiber monolithic integration is achieved.

The invention discloses an optical fiber twinning controllable vernier hydrogen sensor and a detection method, and belongs to the technical field of optical fiber sensing, the optical fiber twinning controllable vernier hydrogen sensor comprises a single-mode optical fiber, a femtosecond laser direct writing grating, a Fabry-Perot interferometer and a Pd / WO3 hydrogen sensitive film; the single-mode optical fiber comprises an optical fiber core and an optical fiber cladding, the femtosecond laser direct writing grating is prepared in the optical fiber core, the Fabry-Perot interferometer is composed of a reflecting surface 1 and a reflecting surface 2 which are relatively parallel to each other, the Pd / WO3 hydrogen sensitive film is coated on the inner side of the reflecting surface 2, and the femtosecond laser direct writing grating and the Fabry-Perot interferometer are arranged in series; the optical path of the Fabry-Perot interferometer is modulated through the interaction of the Pd / WO3 hydrogen sensitive film and hydrogen, interference spectrum wavelength drift is triggered, temperature compensation is achieved in combination with the temperature response of the femtosecond laser direct writing grating, and hydrogen concentration sensing is completed. The method is suitable for hydrogen leakage detection in industrial environments, energy equipment and other scenes.

The invention discloses a multi-focus translation staggered close connection type parallel laser direct writing rapid processing method which comprises the steps that a multi-focus module and a laser direct writing scanning device are built, the multi-focus module generates multi-beam arrays which are arranged in parallel, and after the multi-beam arrays are focused by the laser direct writing scanning device, multi-focus laser arrays which are arranged in parallel at equal intervals are formed at a focal plane; a multi-focus translation staggered scanning strategy is designed, and in the scanning strategy, direct-writing machining areas of all focuses are interspersed and staggered, so that a close-connection direct-writing machining area is formed; the multi-focus laser arrays arranged in parallel at equal intervals perform scanning through a scanning strategy, in the scanning process, each focus is controlled through an independent laser switch of the focus, the multi-focus laser arrays interact with a photoetching material, and rapid laser direct writing of any pattern to be processed is achieved in a close connection direct writing processing area. According to the invention, one-mirror-to-bottom type seamless laser direct-writing scanning can be realized, and the multi-focus laser direct-writing processing efficiency and quality can be effectively improved.

The invention discloses a femtosecond laser processing-based silicon optical chip-optical fiber coupled spot-size conversion chip and a preparation method thereof, the femtosecond laser processing-based silicon optical chip-optical fiber coupled spot-size conversion chip comprises a silicon optical chip, a spot-size converter and an optical fiber array, one end of the spot-size converter is aligned with the optical fiber array, and the other end of the spot-size converter is aligned with the silicon optical chip; preparing a waveguide in the waveguide layer in the quartz glass by using a femtosecond laser direct writing system; grinding the end surfaces of the cladding, the waveguide layer and the optical fiber by using abrasive paper with different mesh numbers in sequence, polishing by using a polishing agent, immersing in a beaker filled with absolute ethyl alcohol for cleaning, and drying after cleaning; and placing on a platform with a 45-degree inclination angle, and controlling the three-axis displacement platform to enable the femtosecond laser focus to scan in an end face coupling area of the optical fiber and the first waveguide array according to a designed path so as to obtain the thickness and the cross section width of the waveguide. According to the invention, the silicon optical chip and the optical fiber array can realize spot-matched optical signal transmission, the performance is reliable and stable, and the industrialization development of the silicon optical technology can be realized.

The invention provides a laser holographic anti-counterfeiting film makeup method for optimizing seam precision, which comprises the following steps: acquiring light wave phase distribution data of a seam area through a preset optical simulation model, and calculating light wave phase difference of adjacent holographic image edges by adopting a fast Fourier transform algorithm to obtain spatial distribution coordinates of phase discontinuous points; extracting optical characteristic parameters of a seam area from the optimized phase distribution data, and simulating a propagation path of light waves in the seam area by adopting a finite element analysis method to obtain boundary conditions of smooth transition of the light waves; and manufacturing parameters of a seam area are extracted from the final microstructure template data, a holographic pattern of the seam area is generated through light wave phase modulation and pixel dot matrix density control by adopting a laser direct writing technology, and the holographic anti-counterfeiting film makeup with optical fracture suppression is obtained. By accurately controlling phase distribution and bright spot design of the seam area, continuous transition of light waves and visual seamless connection are achieved.

The invention discloses a metal grid transparent conductive film which sequentially comprises a transparent base material layer, a metal grid layer, a transition layer and a protection layer from bottom to top. The manufacturing method comprises the steps of pretreating the transparent base material, preparing the metal seed layer, performing laser direct writing patterning, performing electroplating thickening to form the metal grid layer, preparing the transition layer and the protective layer, and performing performance test and adjustment. The hexagonal honeycomb grid structure and the arc edge design are adopted, and the problem of metal grid electric field concentration is effectively solved; through the arrangement of the transition layer, the interface bonding force of the metal grid is improved; the protection layer and the transition layer cooperate to improve the corrosion resistance of the film; the problems that an existing transparent conductive material is high in cost, poor in flexibility and insufficient in interface compatibility, and an electrochromic device is concentrated in electric field, short in service life and the like are effectively solved, and the transparent conductive material can be widely applied to building intelligent windows, automobile anti-dazzle rearview mirrors, flexible display panels and other electrochromic devices and has important industrial application value.

The utility model discloses wafer rotation type laser direct writing exposure equipment, which comprises a base provided with a first guide rail; the multiple workbenches are movably connected to the multiple first guide rails, each workbench comprises a bearing disc, and each workbench is configured to be capable of driving a to-be-scanned piece placed on the bearing disc to move in the first direction; the exposure assembly is configured to scan the piece to be scanned; the alignment assembly is configured to calibrate the position of the to-be-scanned piece on the bearing disc; each workbench comprises a rotating mechanism used for driving a to-be-scanned piece to rotate. The equipment adopts central alignment and rotary exposure to replace a traditional linear reciprocating alignment exposure mode, so that vibration is effectively avoided under the condition that an additional anti-vibration structure is not added, resonance caused by reciprocating motion of double workbenches is avoided under the condition of the double workbenches, and the alignment precision and the exposure precision are greatly improved.

The invention discloses a preparation method of a perovskite photoresist nano composite material and a laser direct writing method. The preparation method comprises the following steps: forming a two-photon photoresist substrate; a CsPbBr precursor solution is formed; and fusing the CsPbBr precursor solution and the two-photon photoresist substrate to form the two-photon photoresist nano composite material doped with the CsPbBr precursor. The perovskite photoresist nano composite material formed by the method can reach hundred-nanometer-level processing precision, and the minimum line width can reach 100 nm. Meanwhile, the preparation method disclosed by the invention is simple and low in cost, and a display device prepared from the perovskite photoresist nano composite material disclosed by the invention has excellent performance and can be applied to the fields of information storage, holographic display and the like.

The present disclosure provides a high-temperature resistant nano-copper produced by laser direct writing, a preparation method and an application thereof. The high-temperature resistant nano-copper exhibits excellent oxidation resistance, thermal stability and superior conductivity. In this disclosure, the preparation is simple, and the nano-copper oxide ink can be stored for extended periods without being affected by oxidation. It is suitable for various manufacturing processes including printing, coating, and other similar methods. Moreover, based on laser direct writing, the processing efficiency is high, enabling the one-step integration of multi-performance of the high-temperature resistant nano-copper. The high-temperature resistant nano-copper described in the present disclosure can be used as an interconnection circuit in an integrated sensor system based on all-laser in-situ direct writing, and can be widely applied in fields of aerospace, automobile, electronics, etc.

The invention discloses a preparation method of a high-temperature strain gauge grid wire, and the preparation method comprises the steps: carrying out the vacuum arc melting of a super-high-temperature-resistant strain alloy material, rolling into a foil material with uniform radian, and carrying out the heat treatment of the foil material, thereby obtaining a uniform fine-grain structure. And preparing the foil subjected to heat treatment into grid wires by using a femtosecond laser direct writing technology, subsequently performing in-situ real-time monitoring and defect self-correction on the grid wires, and finally performing functional post-treatment and integrated packaging on the grid wires. According to the preparation method of the high-temperature strain gauge grid wire, femtosecond laser is used for replacing traditional mechanical means such as drawing and wire winding to prepare the grid wire, the grid wire is uniform in size, high in precision and good in material performance, and therefore the measurement precision of the grid wire can be guaranteed, and meanwhile the grid wire has long-term reliability in a high-temperature environment; and the preparation process of the grid wire can be integrated on one laser platform, so that the preparation process is simple and efficient, and the production cost is reduced.

The invention provides a two-step developing method for a photoetching mask plate. The two-step developing method comprises the following steps: S1, fixing a mask substrate subjected to laser direct writing exposure on a carrying table; s2, washing the photoresist surface on the surface of the mask substrate by using deionized water; s3, uniformly coating a layer of developing solution on the surface of the photoresist, and then keeping immersion for t1; s4, continuously washing the surface of the photoresist by using the deionized water; s5, coating a layer of developing solution on the surface of the photoresist again, and then keeping immersion for the duration of t2; s6, continuously washing the surface of the photoresist by using the deionized water; s7, carrying out high-speed rotary spin-drying on the photoresist; t1 is less than t2. The developing method can effectively reduce the photoresist wet developing residue problem, and has the advantages of good developing effect, low production cost and the like.

The invention belongs to the technical field of flexible electronics and sensing, and relates to a stepped multi-mode flexible sensor based on laser-induced graphene and a preparation method of the stepped multi-mode flexible sensor. The sensor comprises a humidity sensitive layer, a pressure sensitive layer, a strain sensitive layer and a temperature sensitive layer which are sequentially stacked in a stepped mode from top to bottom, each sensitive layer comprises a flexible substrate, a laser-induced graphene (LIG) electrode and a connecting area penetrating through the flexible substrate, and the sensitive layers are connected in series through the connecting areas. Through an infrared laser processing method, all the sensitive layers are broken through, all the sensing sensitive layers are communicated, and assembling is carried out. And independent sensing of each physical quantity is realized by leading out a corresponding port on each sensing sensitive layer. According to the stepped structure, spatial isolation is carried out through the flexible substrate, signal crosstalk is reduced, low-cost and high-precision manufacturing is achieved in combination with the laser direct writing process, and the stepped structure is suitable for the fields of medical health monitoring, industrial equipment diagnosis, intelligent robots and the like.

The application belongs to the field of scintillator material preparation, and particularly relates to a manganese-based pixelated scintillator array and a preparation method and application thereof. The (BuTPP)2MnBr4 scintillator material in a molten state is filled into a quartz glass cavity by capillary action, and a glass scintillator matrix is formed by cooling and quenching; then, in-situ crystallization is realized in the glass scintillator by using femtosecond laser direct writing processing, and a pixelated array is precisely constructed. The in-situ crystallization induced by the femtosecond laser significantly improves the photoluminescence intensity and the radiation luminescence intensity of the material, effectively solves the problems of low luminescence efficiency, high pixelation processing difficulty and poor crystallization controllability of the traditional glass scintillator, and the prepared pixelated scintillator array has stable optical performance and clear pixel boundary, is suitable for X-ray imaging, radiation detection and the like, and has simple preparation process and strong controllability of parameters, thereby providing a new implementation method for the preparation of arrayed X-ray scintillators.

An output control device of a laser direct writing image comprises a digital micromirror device and a carrying plate, a driving plate is connected with a host and the carrying plate, the host outputs data through a first output port, the driving plate comprises a first input port, a data processor, a display controller, a storage assembly and a second output port, and the first input port is connected with the data processor. The first input port communicates with the first output port, the first input port is connected with the data processor, the data processor is connected with the storage component and the display controller, and the display controller is connected with the second output port; the data processor comprises a first interface unit, a data processing unit and a second interface unit, the input interface of the display controller adopts a high-speed serial interface, and the second output port and the second input port adopt high-speed serial interfaces. The image control data is transmitted at a high speed, so that the transmission rate is greatly improved, and the transmission of ultra-high-rate image data signals is realized.

The invention relates to the technical field of silicon carbide devices, and discloses a nanowire preparation method which comprises the following steps: preparing a substrate wafer (1); coating a photoresist material layer (2) on the surface of the substrate wafer (1); a growth hole (21) is formed in the photoresist material layer (2) through a laser direct writing photoetching method; putting the substrate wafer (1) into a chemical liquid containing metal ions, and growing a metal structure in the growth hole (21) through electroplating; and removing the photoresist material layer (2) by using a chemical method or a physical firing method to form the metal nanowire (3). According to the invention, the diameter of the metal nanowires and the distance between the metal nanowires can be accurately controlled, and the distribution of the metal nanowires can be arbitrarily designed; the surface area of a metal pad of the chip can be greatly increased, and the surface activation energy is improved, so that the temperature required by the chip in the subsequent welding process is greatly reduced, and meanwhile, the welding strength of chip packaging is greatly improved.

The invention discloses a high-flux super-resolution laser direct writing device and method based on a metasurface, and the device employs a single metasurface to achieve the simultaneous shaping of an excitation light array and a suppression light array through wavelength polarization multiplexing, and replaces a complex independent shaping and beam combination light path in a conventional scheme. The system structure is greatly simplified, generated excitation light and suppression light are completely transmitted in a common path after passing through the DMD and are shaped by a single metasurface, the alignment error and relative drift problems of two light beams are eliminated, and the stability of the super-resolution processing effect is ensured.

The application provides a white clover surface with super-low ice adhesion strength and a preparation method thereof, which comprises analyzing the relationship between the white clover surface structure and the super-hydrophobic cold resistance; copying the white clover surface structure, and processing periodic micropores on a base material by means of femtosecond laser direct writing; boiling the surface of the periodic micropores; and fluorinating the surface to modify it into a functional surface with super-hydrophobicity. The white clover surface with super-low ice adhesion strength has a micro-nano hierarchical structure, which comprises closely arranged larger micrometer-level periodic pore structures, smaller micrometer-level granular particles dispersedly distributed on the surface of the micropore structures, and densely distributed sub-micrometer-level sheet structures on the surface. The surface has super-hydrophobic low adhesion, the ice adhesion strength is as low as 1.08 kPa, the static icing prolonging time can reach 4 h, the dynamic frost prevention capacity can last for 5 h in a low-temperature and high-humidity environment, and the surface has good wear resistance and reusability.

The present invention discloses a system and method for fabricating a double-ring structure in one step based on laser direct writing. The system includes a continuous laser, a beam expansion system, an attenuation plate, a half-wave plate, an optical shutter, a spectrometer, an oil-immersion objective lens, and a positive-negative adjustable photoresist sample arranged along an optical path; further includes a three-dimensional high-precision nanopositioning translation stage, a lens, a CCD camera, and a computer; the spectrometer focuses an incident continuous-wave laser beam onto the surface of the positive-negative adjustable photoresist sample via the oil-immersion objective lens, and a portion of the laser beam incident on the sample surface is reflected back onto the spectrometer and then irradiated onto a third lens; the oil-immersion objective lens focuses the laser beam onto the sample, thereby fabricating the double-ring structure in one step. The present invention can obtain the double-ring structure in one step through a single process at a lower cost, rather than through two or more cumbersome steps; and the inner and outer diameters of the desired double-ring structure can be flexibly changed by changing the power density and the direct writing time.

The application discloses a rare earth ion doped lithium niobate micro-ring laser and a preparation method thereof, and utilizes femtosecond laser direct writing combined with chemical mechanical polishing technology to prepare a micro-ring and a coupling waveguide shape on the surface of a lithium niobate film doped with rare earth ions, and further realizes a micro-ring laser on a lithium niobate sheet. The application can realize low-cost mass production of the micro-ring laser on the sheet, and has important significance in optical communication, photonic integrated circuit, precision measurement and large-scale sensing and the like. Meanwhile, the laser based on the thin film lithium niobate micro-ring can generate multi-mode laser near multiple wave bands, and is a multi-wave channel light source with wide application prospect in optical communication and biosensors.

The present invention belongs to the field of flexible sensor technology, specifically relating to a capacitive pressure sensor and a dual-mode pressure sensor based on laser direct writing, as well as their preparation methods and applications. The capacitive pressure sensor comprises two identical composite electrodes; the composite electrodes are produced by secondary laser direct writing onto a PDMS layer in a resistive pressure sensor. The resistive pressure sensor comprises a Kevlar / graphene substrate layer and a PDMS layer; the PDMS layer is coated on the graphene surface of the Kevlar / graphene substrate layer; the Kevlar / graphene substrate layer is formed by laser direct writing onto the surface of a Kevlar fabric. The dual-mode pressure sensor comprises the capacitive pressure sensor and the resistive pressure sensor.

The invention provides a preparation method of an efficient mass transfer anti-precipitation sea water hydrogen production electrode constructed by femtosecond laser, and relates to the technical field of sea water electrolysis hydrogen production. The method comprises the following steps: carrying out substrate pretreatment on a conductive substrate, periodically preparing a hump microstructure on the surface of the pretreated conductive substrate by adopting a femtosecond laser direct writing technology, and loading a catalytic activity layer on the surface of the hump microstructure substrate to form an integrated electrode. According to the integrated electrode, the catalytic activity and the mass transfer efficiency can be improved under the seawater electrolysis condition, magnesium-calcium precipitation coverage is inhibited, and collaborative optimization of efficient hydrogen production and electrode stability is achieved.

The invention discloses a geometric phase metasurface high-flux laser direct writing system and method, and the system comprises a femtosecond laser, a beam expander, a angular dispersion compensation module, a digital micromirror array, a second 4F system, a spatial light modulator, a fifth lens and an objective lens according to the light advancing direction. Wherein the spatial light modulator is used for performing phase modulation on each unit light spot from the digital micromirror array based on a loaded holographic phase diagram to form a rod-shaped light spot array, and the rod-shaped light spot array forms parallel light transmitted at different angles through the fifth lens and converges at an entrance pupil of the objective lens together. And finally, a parallel direct-writing light spot array is formed in the two-photon photoresist, and geometric phase metasurface unit structure array printing is completed. According to the system, high-flux and high-flexibility direct-writing manufacturing of the geometric phase type metasurface is finally realized.

The application discloses a kind of laser direct writing gray exposure parameter prediction methods based on neural network, belong to gray exposure technical field.This method is used to solve the problem of low efficiency caused by relying on a large number of experimental dose test in traditional gray exposure, inaccurate parameter optimization and insufficient accuracy of prediction model.The technical solution is as follows: first, the data of gray and etching depth under different exposure parameters are obtained by experiment to train the forward neural network model;then, the exposure time that makes the predicted depth greater than the target maximum depth is found by fixing the light intensity and using the model;finally, the gray value matched with the target depth is obtained based on the determined exposure parameters.The application can quickly and accurately predict the optimal exposure time, light intensity and gray value according to the target etching depth, thereby eliminating the repeated dose test process.

The invention belongs to the technical field of laser manufacturing, and relates to a method for regulating and controlling an interface between laser reduction deposited metal and a transparent substrate, which comprises the following steps of: coating a precursor material on the surface of the transparent substrate, and irradiating the interface between the precursor material and the transparent substrate by adopting ultrashort pulse laser through the transparent substrate; and the ultra-short pulse laser scans the interface of the precursor material and the transparent substrate for multiple times according to a preset path for laser direct writing, and a patterned metal structure is obtained. The ultra-short pulse laser penetrates through the transparent substrate from the back to irradiate the precursor material / substrate interface, thickness limitation on the precursor material is avoided, and in the multiple laser scanning process, the temperature of the metal / substrate interface exceeds the chemical bond fracture and recombination temperature, so that more chemical bonds are formed on the two sides of the transition layer, and the performance of the transition layer is improved. The chemical bonding degree of a metal / substrate interface is improved, interface regulation and control of the metal and the transparent substrate are achieved, and a patterned metal structure is obtained.

The application relates to a laser direct writing strain gauge and a preparation method and application thereof, and belongs to the technical field of strain measurement and sensors. The strain gauge comprises a carbonizable flexible substrate, a laser direct writing carbon piezoresistive material, an elastomer encapsulation layer and an electrical lead-out structure; the laser direct writing carbon piezoresistive material is obtained by laser direct writing on the carbonizable flexible substrate; the laser direct writing carbon piezoresistive material is supported by a flexible substrate layer left after carbonization; and the laser direct writing carbon piezoresistive material is a linear pattern formed by mutual connection of no less than two carbon dots or a planar pattern formed by arrangement of no less than four carbon dots. The strain gauge simultaneously realizes low temperature coefficient and high strain sensitivity, can be independently used as a self-supporting structure, can be integrated with an external sensing carrier, and is used for strain testing. The strain gauge is suitable for strain measurement requirements under various complex working conditions and has good engineering adaptability and application flexibility.

A laser scanning imaging device of PCB laser direct writing forming equipment comprises a laser generating and processing unit used for generating single-mode laser and emitting the single-mode laser to a first light beam needed by PCB direct imaging after collimation and focusing; a first galvanometer assembly; the first galvanometer assembly comprises a first galvanometer and a first rotating shaft for driving the first galvanometer to rotate, and is used for deflecting the laser incident at a set angle back and forth and emitting a first light beam; the second galvanometer assembly comprises a second galvanometer and a second rotating shaft used for driving the second galvanometer to rotate, the second galvanometer assembly is used for reflecting the first light beam, and the first light beam forms a one-dimensional image on the second galvanometer; and a rotating surface formed when the first rotating shaft rotates is perpendicular to a rotating surface formed when the second rotating shaft rotates. The utility model has the advantages that the image grid precision can be improved, and the gradient of the line edge after exposure can be improved.

The present invention relates to a method for generating a long focal depth super-resolution light needle and a high aspect ratio laser direct writing system. The method adopts the characteristic of multi-focal point splicing to extend the focal depth, combines with a genetic algorithm to break the contradiction between the numerical aperture and focal depth of a traditional lens, and regulates the incident light field through a super-oscillating lens to realize a long focal depth light field under a high numerical aperture, thereby obtaining an ultra-long focal depth super-resolution light needle light field that exceeds the diffraction limit. Ultimately, the ultra-long focal depth super-resolution light needle light field that exceeds the diffraction limit is used to realize high aspect ratio laser direct writing processing, thereby realizing the processing of micro-nano structures with a line width less than the diffraction limit and with certain processing depth requirements. In addition, the ultra-long focal depth super-resolution light needle light field generated by the present invention can be directly acquired in real time without any bulky and complex mechanical structure, thereby making the architecture of the high aspect ratio laser direct writing system simpler and facilitating the miniaturization design of the system.