195 results about "Nano manufacturing" patented technology

The present invention is directed towards a chucking system, including, inter alia, a body having a surface with a pin extending therefrom having a throughway defined therein, and a land surrounding the protrusions defining a channel between the pin and the land. In a further embodiment, the body comprises a plurality of protrusions.

A method of stamping of molecular patterns and/or devices based on the reversible self-assembly of molecules, particularly organic molecules is disclosed. This method is suitable for the stamping of almost any nanofabricated device and can be used to transferring a large amount of pattern information from one substrate to another at the same time.

The present invention relates to materials, methods and apparatuses for performing imprint lithography using amorphous metallic materials. The amorphous metallic materials can be employed as imprint media and thermoplastic forming processes are applied during the pattern transfer procedure to produce micron scale and nanoscale patterns in the amorphous metallic layer. The pattern transfer is in the form of direct mask embossing or through a serial nano-indentation process. A rewriting process is also disclosed, which involves an erasing mechanism that is accomplished by means of a second thermoplastic forming process. The amorphous metallic materials may also be used directly as an embossing mold in imprint lithography to allow high volume imprint nano-manufacturing. This invention also comprises of a method of smoothening surfaces under the action of the surface tension alone.

A tunable super-lens (TSL) for nanoscale optical sensing and imaging of bio-molecules and nano-manufacturing utilizes negative-index materials (NIMs) that operate in the visible or near infrared light. The NIMs can create a lens that will perform sub-wavelength imaging, enhanced resolution imaging, or flat lens imaging. This new TSL covers two different operation scales. For short distances between the object and its image, a near-field super-lens (NFSL) can create or enhance images of objects located at distances much less than the wavelength of light. For the far-zone, negative values are necessary for both the permittivity ε a permeability μ. While well-structured periodic meta-materials, which require delicate design and precise fabrication, can be used, metal-dielectric composites are also candidates for NIMs in the optical range. The negative-refraction in the composite films can be made by using frequency-selective photomodification.

A single electron transistor device for sensing at least one particle, includes at least two electrodes positioned with a gap formed between the electrodes and an activation object positioned in the gap with an insulating layer between the activation object and each electrode. The activation object which is able to transfer electrons is arranged with at least one binding structure bonded to it for receiving the at least one particle. The electrodes are formed with an inter distance of less than 50 nm and the electrodes are connectable directly or indirectly to a signal acquisition system. The sensing device is arranged to allow a tunnelling current proportional to the presence of the at least one particle in the binding structure, to flow through the activation object. A method, and system using a single electron transistor device fabricated with micro/nano fabrication methods are also disclosed.

Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM² emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M³ emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

The invention discloses a hydrophobic surface, a preparation method and application thereof in dropwise condensation heat transfer, and relates to the fields of micro-nano manufacturing, condensation heat transfer and the like. The hydrophobic surface has a micro-nano two-level structure, wherein the micro-nano two-level structure is anisotropic and the hydrophobic surface has anisotropic wettability. On one hand, the micro-nano two-level structure of the hydrophobic surface can promote realization of dropwise condensation, and can significantly improve the heat transfer efficiency compared with the common filmwise condensation,; on the other hand, the anisotropic wettability of the hydrophobic surface can affect condensation and fall of water drops to a certain extent and can accelerate discharge of liquid drops under the influence of gravity and other factors, thereby further improving the condensation heat transfer efficiency.

The present invention provides an optical head with a single or multiple sub-wavelength light beams, which can be used in arenas such as photolithography, optical storage, optical microscopy, to name a few. The present invention includes a transparent substrate, a thin film, and a surface structure with sub-wavelength surface profile. The incident light transmits through the transparent substrate, forms a surface plasma wave along the sub-wavelength aperture located within the thin film, and finally re-emits through spatial coupling with the sub-wavelength profile of the surface structure. As the coupled re-emitting light beam or light beams can maintain the waist less than that of the diffraction limit for a few micrometers out of the surface with sub-wavelength profile in many cases, this invention can have applications ranging from micro or nano manufacturing, metrology, and manipulation by using light beams with waist smaller than the diffraction limit.

The invention relates to a large-stroke column coordinate two-photon polymerization processing method and device and belongs to the technical field of micro-nano manufacturing. The method includes that a test piece is mounted on a C shaft turntable in a coaxial or abaxial manner, the C shaft turntable is in rotary motion around the z axis to enable femtosecond laser beams to be in circumferential motion relatively to the test piece, a C shaft is mounted on the x-axis sliding plate and is in linear feeding motion along the x-axis direction to enable the femtosecond laser beams to be in radial motion relatively to the test piece, the femtosecond laser beams are enabled to be in quick reciprocating motion along the radial direction of the C shaft turntable through swinging of a two-dimensional galvanometer around the x axis and the Y axis, feeding motion of a focusing center of the femtosecond laser beams along the z-axis direction is acquired through translational motion of a z-axis sliding plate along the z-axis direction, and when the test piece is mounted in the abaxial manner, rotating speed of the C shaft turntable can be changed in real time to enable the femtosecond laser beams to acquire a same speed at each expected scanning position. By the large-stroke column coordinate two-photon polymerization processing method and device, back-off of a moving shaft is avoided, disturbed paths can be tracked quickly and precisely, and quick processing of large-area three-dimensional micro-nano structures is realized.

The invention discloses a resolution testing standard board manufacturing method for a super-resolution fluorescence microscope system. A nano-manufacturing technology and a nanoparticle self-assembling technology are used for manufacturing a fluorescent quantum dot line with a width of 20 to 100nm as a fluorescent super-resolution standard board. At present, a main means for detecting the resolution of a super-resolution fluorescence microscope is fluorescent nanospheres, but is very complex. The manufacturing method is simple and reliable, excellent fluorescent characteristics are ensured, and the manufactured super-resolution standard board can be directly used for testing the super-resolution fluorescence microscope system.

An inorganic resist material is provided, which is an incomplete oxide of a phase-change material. The oxygen content in the inorganic resist material is lower than the stoichiometric oxygen content of a complete oxide of the phase-change material, and a general formula of the inorganic resist material is A_1-xO_x, in which A represents the phase-change material, and x is between 5 at. % and 65 at. %. The inorganic resist material can be used to form line patterns or recording pits with size smaller than the exposure light spot by using the laser of conventional lithography process as an exposure source.

The invention discloses a nanoscale size structure measuring method and a device, which can simultaneously measure parameters, such as nanoscale size structure width, depth, side corner and the like. The method of the invention comprises the following steps: vertically projecting a white light beam to the surface of a sample workpiece with a nanoscale size structure after filtering and polarizing; collecting the surface reflected signal of the sample workpiece; calculating to obtain a nanoscale size structure microscope imaging picture; matching a measured outoffocus scanning imaging allocation plan with a theory outoffocus scanning imaging allocation plan; and extracting to obtain the geometric parameter value of the nanoscale size structure is to be measured. The nanoscale size structure measuring device provided by the invention can provide a non-contact, non-destructive, low-cost and quick measuring means for various typical nanoscale size structures, such as isolated line array structure and intensive line array structure to which the lot sizing manufacturing technology relates, and the lot sizing manufacturing technology comprises the nanometer manufacturing technology, such as traditional photoetching, nano-imprint and the like based on imaging transfer.

An asymmetric-cut multilayer diffracts EUV light. A multilayer cut at an angle has the same properties as a blazed grating, and has been demonstrated to have near-perfect performance. Instead of having to nano-fabricate a grating structure with imperfections no greater than several tens of nanometers, a thick multilayer is grown on a substrate and then cut at an inclined angle using coarse and inexpensive methods. Effective grating periods can be produced this way that are 10 to 100 times smaller than those produced today, and the diffraction efficiency of these asymmetric multilayers is higher than conventional gratings. Besides their ease of manufacture, the use of an asymmetric multilayer as a spectral purity filter does not require that the design of an EUV optical system be modified in any way, unlike the proposed use of blazed gratings for such systems.

Provided are a two-dimensional planar photonic crystal superprism device and a method of manufacturing the same, in which a manufacturing process is simplified using a nanoimprint lithography technique, and thus price-reduction and mass production are facilitated. The two-dimensional planar photonic crystal superprism device includes: a single-mode input waveguide comprising a straight waveguide having a taper structure and a bending waveguide; a superprism formed on an output end side of the single-mode input waveguide and comprising a slab and a photonic crystal superprism; and a single-mode output waveguide comprising a straight waveguide having a taper structure and a bending waveguide, and formed adjacent to the photonic crystal superprism. Using the two-dimensional planar photonic crystal superprism device, it is possible to facilitate manufacturing of nano-photonic integrated circuits, photonic crystal integrated circuits and nano-photonic systems. In addition, a wavelength-selectable photonic crystal superprism device using high dispersion of photonic crystal, which is several hundred times the dispersion of conventional glass prism, can be manufactured using thermal/hot and ultraviolet nanoimprint lithography techniques corresponding to nano-manufacturing technology.

A method for sealing through-holes in a material via material diffusion, without the deposition of a sealant material, is disclosed. The method is well suited to the fabrication and packaging of microsystems technology-based devices and systems. In some embodiments, the method comprises forming sacrificial material release through-holes through a structural layer, removing the sacrificial material via an etch that etches the sacrificial material through the release through-holes, and sealing of the release through-holes via material diffusion.

The invention discloses a preparation method of a nano-imprint template in a vector type AFM (atomic force microscopy) nano processing system, and belongs to the technical field of nano manufacturing. The method comprises the following steps that: the vectorization programming is performed on a required nano structure to obtain a macro document to be processed to control the movement of a pinpoint; the AFM enters an imaging mode scanning state, then begins scanning a sample surface, enters a script program mode after the scanning procedure is stable and a stable scanning image with good repeatability is obtained, invokes and imports the macro document (to be processed) obtained in the third step to a processing system to process; and the AFM enters a real-time imaging mode after the processing is finished, scans again to obtain a surface topography structure image of a processed structure, and finally uses a prepared nano pattern structure as a mask to transfer the nano structure image prepared by the anodic oxidation induced by an AFM electric field by combining with a high-selectivity anisotropism wet etching technology so as to manufacture the nano structure template.