The invention relates to a method for galvanically growing a plurality of nanowires (1) on an
electrically conductive surface (2), comprising a) placing a film (3) on the surface (2), wherein the film (3) has a plurality of continuous pores (4), b) placing an elastic element (7), which is permeable to a first
electrolyte (5), on the film (3), wherein the first
electrolyte (5) is brought into contact with the film (3) via the elastic element (7), c) for a first growth period, galvanically growing the plurality of nanowires (1) via deposition from the first
electrolyte (5) into the pores (4) of the film (3), while the surface is in a first growth zone (8), wherein the elastic element (7) is pressed against the film (3) by means of a pressing device (10) arranged in the first growth zone (8), d) lifting the elastic element (7) from the film (3), and e) for a second growth period, continuing the galvanic growth of the plurality of nanowires (1) via deposition from the first electrolyte (5) or from a second electrolyte (6) into the pores (4) of the film (3), while the surface (2) is in a second growth zone (9) different from the first growth zone (8).