47 results about "Electro polishing" patented technology

A super abrasive impregnated singulation saw blade is made by depositing grindable friable super abrasive particles while electro depositing or electroless depositing a strong binder metal such as nickel on a form or mandrel. The deposited super abrasive on the upper side protrudes from the side of the blade and are ground down to or near the binder metal to plannerize the sides of the saw blade and true and balance the saw blade. Post operations include electro polishing to expose equal amounts of super abrasive on the cutting edge or on all sides. Antifriction particles may be added in the side walls or deposited on the outside.

Provided are a multi-scale cantilever structure having nano-sized holes prepared by anodic oxidation and a method of preparing the same. The multi-scale cantilever structure is prepared using anodic oxidation and electro-polishing so that a manufacturing process is simple and a manufacturing cost is inexpensive. In addition, the multi-scale cantilever structure has a porous structure having a plurality of nano-sized holes inside thereof, and thus a surface area of the cantilever structure can be maximized. Therefore, when the cantilever structure is used in a sensor, the sensor can have improved sensitivity and selectivity.

A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face. In one embodiment, a power source applies a bias between the substrate and at least two electrodes. The electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge. A second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.

A refurbishing method, refurbishing apparatus and refurbished article are provided. The refurbishing method includes accessing a plurality of rotatable components attached to a turbine assembly, the turbine assembly being a portion of a turbomachine, providing a predetermined volume of a buffered electrolytic solution in an electro-polishing tank, coupling the plurality of rotatable components to a power supply, immersing an immersion portion of at least one of the plurality of rotatable components in the buffered electrolytic solution, passing an electrical energy through the immersion portion of at least one of the plurality of rotatable components while the immersion portion is immersed in the buffered electrolytic solution, wherein an electrical flux to the immersion portion electro-polishes the immersion portion, separating the immersion portion from the buffered electrolytic solution, and applying a corrosion inhibitor to the plurality of rotatable components.

Disclosed is a method of forming a copper wiring in a semiconductor device. A copper barrier metal layer and a copper seed layer are sequentially formed along the surface of an interlayer insulating film including damascene patterns. In a state that a wafer is then loaded onto an electrical plating apparatus in which a copper plating solution is filled and a negative (−) power supply is also applied to the wafer, copper is plated so that the damascene patterns are sufficiently filled, thereby forming a copper layer. Next, the copper layer is polished in the plating solution by means of the electro-polishing process by changing the negative (−) power supply to the positive (+) power supply. Due to this, the surface of the copper layer is flat over the entire wafer. Thereafter, a chemical mechanical polishing process is performed until the surface of the interlayer insulating film is exposed, thereby forming copper wirings within the damascene patterns. As such, an uneven surface of the copper layer plated by the electroplating method is etched in the plating solution, thus making flat the surface of the copper layer and thin the thickness of the copper layer. It is thus possible to prevent a dishing phenomenon or an erosion phenomenon in a subsequent chemical mechanical polishing process. Therefore, the process margin of the chemical mechanical polishing process could be increased and process characteristics could be improved.

Method and apparatus for process control of electro-processes. The method includes electro-processing a wafer by the application of two or more biases and determining an amount of charge removed as a result of each bias, separately. In one embodiment, an endpoint is determined for each bias when the amount of charge removed for a bias substantially equals a respective target charge calculated for the bias.

The object of the invention is to provide a method of manufacturing a semiconductor device and a processing apparatus for planarization wherein to form copper wiring in multiple layers. The removal of a residue of polishing by local electro polishing, the enhancement of the performance of planarization by using a grindstone and the reduction by small frictional force in electro polishing of damage, are enabled. To achieve the object, the following measures are taken. A residue of polishing of copper is removed by combining the detection of a local area including the residue of polishing of copper and local processing for electro polishing. As small-load processing for planarization is enabled by using electro polishing, multilayer interconnection structure using low-k material as a dielectric interlayer is also enabled. Plural pairs of small unit electrodes in a pair of which minus electrodes surround a plus electrode are provided to a tool for electro polishing, each electrode is connected to a power supply, pulse voltage is applied to each electrode and copper is electrolytically polished.

Compositions and methods are disclosed for preventing the oxidative corrosion of metal surfaces by exposing a metal surface to an anti-corrosion agent characterized as a lower alkyl carboxylic acid or salts and / or other derivatives that conserve or embody the lower alkyl carboxylic acid moiety present in their molecular structures as an active anti-corrosion agent. The anti-corrosion agent may be used in combination with a material capable of forming a moisture retentive barrier over the metal surface. The compositions and methods of the invention provide a practical, non-toxic way of ensuring anti-corrosion protection for metals, or devices containing exposed metals, stored or operated in water or in the presence of water vapor. Exemplary, non-exhaustive uses of the invention include employing the composition as lubricant for the surface of a metal or as a pump oil or brake fluid; using the composition as an undercoating for painting, electro-plating or electro-polishing procedures; and providing a protective coating for any metal or metal-containing machine or device, form automotive assembly plant metal press machines to electronic circuit boards.

The invention discloses a method for applying a silicon nitride film layer on the surface of a piston ring. The method comprises the following steps of: electro-polishing and ultrasonic-cleaning the piston ring; disposing the cleaned piston ring in RF plasma-enhanced chemical vapor deposition equipment, vacuumizing the system to 5*10<-3> Pa, reacting in the presence of silicane and ammonia gas asreaction gas resource at a deposition temperature of 300 to 500 DEG C and RF power of 90 to 150 W for 10 to 30 min to deposit the silicon nitride film on the upper surface and the side surface of thepiston ring, wherein the a flow rate of the silicane is 15 to 45 sccm and the flow rate ratio of the silicane to the ammonia gas is 1 / 2 to 1 / 4; and naturally cooling and taking out. The surface hardness of the piston ring deposited with the silicon nitride film layer is 900 to 1,400 HV, which is far higher than the hardness 800 HV of common chromium-plated products. The film layer has good corrosion resistance, abrasion resistance and self-lubrication characteristic, thus effectively improving the use performance of the piston ring, and improving the operation stability and prolonging the service life. The method overcomes the disadvantages of conventional chromium-plated piston ring such as larger energy consumption, serious pollution and complex process.