8 results about "Nanostructure fabrication" patented technology

The invention discloses a method for preparing a 3D nano structure on a curved-surface substrate and the curved-surface substrate, and belongs to the technical field of micro-nano manufacturing. According to the method, sequentially stacked photoresist films are obtained on the surface of the curved-surface substrate through the steps of substrate preparation, gluing, transfer printing, overlapping and repeated gluing and transfer printing, then the curved-surface substrate with a 3D nanostructure is obtained through exposure and development, so that the photoresist which is incompatible in solvent and different in sensitivity can realize multi-layer cross stacking on the curved-surface substrate, and therefore, the yield of the curved-surface substrate is improved. The 3D nano-structure with the complex shape is processed on the curved surface substrate through the one-time exposure and development technology, so that the precision error and the size error of the engraving and sleeving position in the traditional engraving and sleeving technology are avoided, and the high-precision manufacturing of the 3D nano-structure with the complex shape is realized; a new solution is provided for manufacturing of a 3D nano structure with a complex shape in the fields of micro-nano manufacturing, optics, biology, surface science and bionics.

Described herein are antireflective materials and methods of making antireflective materials. The material can include a plurality of hierarchical nanostructures on a base substrate and a total specular reflection of less than 3% at a wavelength of about 400nm to about 1100 nm. The material can have an etched polyimide layer disposed on the superior surface of the hierarchical nanostructures. The materials can also have superhydrophobic characteristics.

A nanostructure according to an embodiment of the present disclosure includes a rough surface having an arithmetic mean height (Sa) of 0.09 μm or greater and 1.21 μm or less and a ratio (Sq / Sa) between a root mean square height (Sq) and the arithmetic mean height (Sa) of 1.22 or greater and 2.36 or less.

To provide a method for manufacturing nanostructures that allows for the production of nanostructures without changes in the dimensions or shape of the mold due to the influence of moisture from the time of mold creation to the formation of the coating layer. [Solution] A method for producing a nonwoven nanostructure, comprising the steps of: producing a mold made of polyvinyl butyral; forming a coating layer on the mold; and removing the mold to obtain a nanostructure.

This invention discloses a block copolymer and its guided self-assembly method, belonging to the field of nanostructure manufacturing technology. The block copolymer shown in Formula 1, wherein 0 < x < 1, 30 < n < 300, 30 < m < 300, and q is an integer between 1 and 5; R1 is selected from C1-C6 straight-chain or branched alkyl groups; and R2 is selected from H or methyl groups. The block copolymer has a high χ value and the two blocks have similar γ values, enabling guided assembly on a chemical pattern to obtain smaller nanostructures that vertically penetrate the substrate.

The application belongs to the technical field of nanostructure manufacturing, and discloses a method for modifying 3D nano patterns by plasma and guiding self-assembly of block copolymers. The preparation steps of the application include: grafting polymer brushes / felts to a substrate surface, cleaning, spin coating photoresist, exposure, development, plasma modification and cleaning. In the method, the interface free energy between the block copolymer and the brush / felt is adjusted by modifying the polymer brush / felt by plasma, so that a non-selective substrate is obtained. The method is easy to implement, simple to synthesize, and is a way to obtain neutral molecular brushes worthy of promotion. At the same time, the block copolymer is guided to carry out density multiplication assembly, and a defect-free long-range ordered morphology is obtained. Compared with the traditional chemical pattern method, the method reduces the step of trimming etching, has lower requirements for equipment in the preparation process, and has a simple preparation process and is easy to control. By changing the exposure dose and oxygen plasma modification conditions, different block copolymers can be guided to carry out assembly, and a higher density multiplication effect can be obtained.

This invention relates to the field of wide bandgap semiconductor nanostructure fabrication technology, specifically an electrochemical etching method for silicon carbide nanowires. The method comprises: S1, selecting a 4H-SiC wafer, cleaning and drying it to obtain a pretreated 4H-SiC wafer; S2, using the pretreated 4H-SiC wafer as the anode and a platinum sheet as the cathode, immersing them in a mixed etching solution of HF / H2O2 / (CH2OH)2 with a fixed spacing; S3, applying an oscillating current with a period of 60s to the electrochemical etching system, adjusting the current amplitude according to the etching stage, and completing the etching under isothermal conditions; wherein, the current amplitude during the nanowire backbone formation stage is 0.4-0.5 mA / cm², and the current amplitude during the protrusion structure induction stage increases to 0.6-0.7 mA / cm². 2 During the protruding structure forming stage, the current amplitude increases to 0.9-1.0 mA / cm. 2 During the surface finishing stage, the current amplitude is reduced to 0.8-0.9 mA / cm². S4: The etched 4H-SiC wafer is removed, ultrasonically cleaned, and dried to obtain bamboo-like silicon carbide nanowires. This solves the problems of large lattice damage, poor morphology controllability, and insufficient anisotropy in existing silicon carbide nanowire etching processes.

A method for manufacturing a nanostructure and a nanostructure are disclosed. The method for manufacturing the nanostructure includes first alternately and periodically stacking a first material layer and a second material layer on a substrate to form a stacked layer, then forming a slot pattern on an upper surface of the stacked layer and etching the stacked layer to an upper surface of the substrate to transfer the slot pattern to the stacked layer, filling the slot pattern in the stacked layer with a molding material, and removing the first material layer or the second material layer left in the stacked layer, so as to form nanopores arranged in an array in the stacked layer.