Nanostructure and techniques for fabricating nanostructures are provided. In one embodiment, nanostructures may be formed by providing a Silicon-on-Insulator (SOI) substrate, forming a pattern on the SOI substrate, disposing a conformal layer over the pattern, etching the conformal layer, except for a sidewall portion, removing the pattern, transferring the sidewall pattern to the silicon layer of the SOI substrate to form the nanostructure, and releasing the nanostructure.