Provided in the present invention are an
insulated gate bipolar transistor with a super junction structure, and a preparation method therefor. The
transistor comprises a drift region of a first
conduction type, an epitaxial layer, a plurality of trenches arranged at intervals, filling
layers of a second
conduction type, gate
electrode structures, a
body region, a
body contact region, a source region, an isolation
dielectric layer and a source
electrode conductive layer, wherein the epitaxial layer is located on an upper surface of the drift region; the filling
layers and the gate
electrode structures are sequentially arranged in the trenches from bottom to top; each gate electrode structure comprises a gate conductive layer, and a
gate dielectric layer, which is located on inner walls of the trench and an upper surface of the filling layer and wrap side walls and a bottom face of the gate conductive layer; the
body contact region and the source region are located on an upper
surface layer of the
body region and are adjacent to an upper surface of the
body region; the isolation
dielectric layer is provided with a
contact hole, which penetrates the isolation
dielectric layer and exposes the source region and the
body contact region; and the source electrode conductive layer fills the
contact hole and covers the isolation
dielectric layer. In the present invention, the filling layer is formed at the bottom of each trench so as to shield the overlapping area between the bottom of the trench and the drift region, thereby reducing gate electrode charges Qgc.