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Optoelectronic device comprising perovskites

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.
Owner:OXFORD UNIV INNOVATION LTD

Transparent conductive film for flat panel displays

Transparent conductive films for flat panel displays and methods for producing them are disclosed. In general, a method according to the present invention comprises: (1) providing a flexible plastic substrate; (2) depositing a multi-layered conductive metallic film on the flexible plastic substrate by a thin-film deposition technique to form a composite film, the multi-layered conductive metallic film comprising two layers of an alloy selected from the group consisting of indium cerium oxide (InCeO) and indium tin oxide (ITO) surrounding a layer of an alloy of silver, palladium, and copper (Ag/Pd/Cu); and (3) collecting the composite film in continuous rolls. Typically, the thin-film deposition technique is DC magnetron sputtering. Another aspect of the invention is a composite film produced by a method according to the present invention. Still another aspect of the invention is a composite film comprising a multilayered film as described above formed on a flexible plastic substrate, wherein the composite film has a combination of properties including: transmittance of at least 80% throughout the visible region; an electrical resistance of no greater than about 10 Omega/square; a root-mean-square roughness of no greater than about 2.5 nm; and an interlayer adhesion between the multi-layered metallic film and the remainder of the composite film that is sufficiently great to survive a 180° peel adhesion test.
Owner:XYLON LLC

Conductive Material For Connecting Part And Method For Manufacturing The Conductive Material

There is provided a conductive material comprising a base material made up of a Cu strip, a Cu—Sn alloy covering layer formed over a surface of the base material, containing Cu in a range of 20 to 70 at.%, and having an average thickness in a range of 0.1 to 3.0 μm, and an Sn covering layer formed over the Cu—Sn alloy covering layer having an average thickness in a range of 0.2 to 5.0 μm, disposed in that order, such that portions of the Cu—Sn alloy covering layer are exposed the surface of the Sn covering layer, and a ratio of an exposed area of the Cu—Sn alloy covering layer to the surface of the Sn covering layer is in a range of 3 to 75%. The surface of the conductive material is subjected to a reflow process and preferably, an arithmetic mean roughness Ra of the surface of the material in at least one direction, is not less than 0.15 μm while the arithmetic mean roughness Ra thereof, in all directions, is not more than 3.0 μm and the average thickness of the Cu—Sn alloy covering layer is preferably not less than 0.2 μm. The conductive material is fabricated by a method whereby the surface of the base material is subjected to roughening treatment, an Ni plating layer, a Cu plating layer and an Sn plating layer are formed, as necessary, over the surface of the base material, and subsequently, a reflow process is applied.
Owner:KOBE STEEL LTD
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