35 results about "Interference lithography" patented technology

The invention discloses a preparation method of a polymer dispersed liquid crystal holographic grating with s polarization high diffraction characteristics, and belongs to the technical field of holographic optics. Raw materials comprise 60-90% of a thiol-ene monomer, 10-40% of liquid crystals, a photoinitiator accounting for 1.25% of the mass of the monomer, and a coinitiator accounting for 1.56% of the mass of the monomer. Light with the wavelength of 532 nm and the light intensity of 5-30 mW / cm < 2 > is used for carrying out double-interference photoetching to generate photochemical reaction so as to generate the polymer grating film, and the light is s polarized light. Under the optimal recording condition, delta n under s polarization can reach 1.93 * 10, and delta n under p polarization can reach 1.21 * 10. In combination with morphology analysis, it is found that refractive index modulation strongly depends on the proportion of a liquid crystal-rich phase to a polymer-rich phase in the grating. It is proved that the size of liquid crystal microdroplets formed by holographic recording is larger due to low recording intensity, and therefore the threshold driving voltage of the HPDLC grating is reduced.

The utility model relates to a multi-beam laser interference photoetching system which comprises a high-power laser, five high-reflectivity mirrors, two semi-reflecting and semi-transmitting mirrors, three groups of 1 / 2 wave plates and polaroids, thirteen lens supports and a sample table, the high-power laser emits a beam of light, the beam of light is divided into three coherent light beams by the five high-reflectivity mirrors and the two semi-reflecting and semi-transmitting mirrors, and the three coherent light beams are connected with the sample table. The relative positions of the five high-reflectivity mirrors and the two semi-reflecting and semi-transmitting mirrors have a certain corresponding relation with the incident angle and the space angle of the three coherent light beams, the light intensity energy density and the polarization state of the coherent light beams are changed by adjusting the angles of the three groups of 1 / 2 wave plates and the polaroids, and the light intensity energy density and the polarization state of the coherent light beams are changed through the incident angle, the space angle and the polarization state. The period and the morphology of the patterned micro-nano structure are changed, and the characteristic size of the patterned micro-nano structure is changed by changing the light intensity energy density and the polarization state, so that the process is simplified, and the control capability of the patterned micro-nano structure is improved.

The invention discloses a waveguide grating for realizing diffraction efficiency gradual change, a preparation method and equipment. And the grating depth and the duty ratio are monotonically increased along the etching direction, so that the spatial gradient distribution of the diffraction efficiency is obtained. The method comprises the following steps of: firstly, forming periodic photoresist stripes on a substrate by utilizing an interference photoetching technology to obtain an initial grating pattern; and then, the substrate is placed in a plasma etching system, and the depth and duty ratio of the grating are monotonically increased along the etching direction by regulating and controlling the etching time or etching rate of different areas, so that the spatial gradient distribution of diffraction efficiency is realized. The waveguide grating disclosed by the invention effectively compensates attenuation of light in a waveguide transmission process, and the uniformity and imaging quality of AR display application and the like are remarkably improved. The problem of uneven brightness caused by light energy transmission attenuation of the waveguide grating in the prior art can be effectively solved, the manufacturing cost is low, the process expandability is high, and the waveguide grating is suitable for various waveguide optical display scenes such as mixed reality (MR) and virtual reality (VR).

According to the grid line perpendicularity adjusting method and device for the holographic diffraction grating double-beam exposure system, on the basis of the double-beam exposure system, a high-side sag substrate, a cube-corner prism, a rectangular prism, a horizontal adjusting table and a CCD are additionally arranged; a reflection reference surface is established through a cube-corner prism and a right-angle prism, and a to-be-exposed substrate with a high-precision positioning notch is combined, so that high-precision correction of an exposure light path is realized. The method effectively solves the problem that the perpendicularity of the grid line relative to the bottom reference surface of the substrate in double-beam holographic interference photoetching is insufficient, ensures that the prepared grating grid line has high perpendicularity precision, and remarkably improves the diffraction performance of the grating.

The present disclosure provides a laser interference lithography method, comprising: performing interference exposure on a wafer coated with photoresist; and performing patterned flood exposure on the interference-exposed wafer, wherein performing the flood exposure comprises: determining a first light field distribution in the interference-exposed wafer; determining a light field distribution of a flood light source for the flood exposure as a second light field distribution based on the first light field distribution, an intended pattern distribution, and parameters of the flood light source for the flood exposure; and patterning the light field distribution of the flood light source based on the second light field distribution, and controlling the flood light source with the patterned light field distribution to perform flood exposure on the interference-exposed wafer, thereby forming the intended pattern distribution in the flood-exposed wafer.

This invention discloses a multi-beam laser interference lithography system and method for periodic three-dimensional micro / nano structures. The system includes a laser, a diffraction element, a 4F collimation-beam control-focusing module, and a piezoelectric stick-slip precision motion system. The laser is perpendicularly incident on the diffraction element, which diffracts the beam into N sub-beams and one central beam distributed symmetrically. The 4F collimation-beam control-focusing module includes a first Fourier transform lens, a custom beam control frame, and a second inverse Fourier transform lens. The first Fourier transform lens collimates the umbrella-shaped N+1 beam generated by the diffraction element into a parallel N+1 beam. The custom beam control frame includes a half-wave plate and a polarizer along the optical axis. The second inverse Fourier transform lens focuses the parallel N+1 beams onto the same point on the sample. The lithography of the sample is completed by coordinating the spatial interference light field with the movement of the piezoelectric stick-slip precision motion system.

The invention provides a deep ultraviolet super-resolution interference photoetching method based on surface plasmon, and relates to the technical field of semiconductor integrated circuit manufacturing, and the method comprises the following steps: preparing a multilayer film super-lens structure on a substrate to form a plasmon double-resonant cavity interference system, the multi-layer film super lens structure shows a spatial frequency spectrum band-pass filtering characteristic; performing super-resolution interference photoetching exposure on the multilayer-film super-lens structure based on a grating mask with a preset period under the deep ultraviolet wavelength, wherein the preset period of the grating mask meets the condition that transmission diffraction light generated by the grating mask excites two groups of surface plasmons with opposite propagation directions in the multilayer-film super-lens structure and interferes with the surface plasmons; developing the exposed multilayer film super-lens structure, and obtaining a super-resolution interference photoetching exposure pattern in the photoresist layer of the multilayer film super-lens structure; and transmitting the super-resolution interference photoetching exposure pattern to a substrate to obtain a super-resolution interference pattern structure.

The present invention belongs to the technical field of micro-nano structure processing, and relates to a polarization interference lithography method and system for three-dimensional micro-nano structures. An amplitude spatial light modulation element is used to modulate the amplitude of the incident light field to obtain an amplitude-modulated light field; a crystal holographic optical element is used to modulate the amplitude-modulated light field to obtain a first transmitted light field; a holographic optical element is used to modulate the first transmitted light field to obtain a second transmitted light field on the Fourier spectrum plane; a first Fourier transform lens is used to perform Fourier transforms on the amplitude-modulated light field, the first transmitted light field, and the second transmitted light field to obtain a Fourier-transformed light field; a second Fourier transform lens is used to perform a Fourier transform on the Fourier-transformed light field to obtain an interference light field with adjustable light intensity and phase on the imaging plane; the light intensity and phase of the interference light field are adjusted so that the distribution of the interference light field matches a preset three-dimensional micro-nano structure, thereby preparing the preset three-dimensional micro-nano structure. This solution can prepare three-dimensional micro-nano structures with high precision and small line widths.

The invention relates to the technical field of optical thin films, and discloses a high-light-transmittance composite peep-proof film and a preparation method thereof.The method comprises the steps that basic information of a high-molecular polymer and a light absorption material is obtained, the polymer is screened to synthesize antioxidant resin, chemical stability parameters of the antioxidant resin are recorded, and the light absorption material is prepared based on functional group design. And establishing a molecular structure and absorption spectrum database. A mixed system is formed through mechanical stirring and ultrasonic dispersion, a grating structure is etched through laser interference photoetching, the relation between laser parameters and grating precision is recorded, then a refractive index material is injected into grating gaps through the micro-fluidic injection technology, finally, the peep-proof layer is attached to other functional layers through the hot-pressing vacuum attaching technology, and interface bonding force data is recorded. According to the invention, accurate proportioning of the antioxidant resin and the light-absorbing material and grating structure optimization are realized through cooperation of multiple processes, and the optical performance and interface bonding force of the peep-proof layer are improved by combining the microfluidic filling and hot-pressing lamination technology.

The invention discloses a surface plasma interference photoetching structure and a manufacturing method thereof, the surface plasma interference photoetching structure can be applied to the technical field of semiconductors, the surface plasma interference photoetching structure corresponds to ultraviolet light with the wavelength of 190-450 nm, and the surface plasma interference photoetching structure comprises a grating structure, a first laminated structure, a photoresist layer and a reflecting layer; the first laminated structure, the photoresist layer and the reflecting layer are sequentially arranged on the grating structure; the grating structure comprises an opening area which is periodically arranged, and the width of the opening area accords with a first preset threshold value; the first laminated structure is formed by stacking a silicon dioxide layer and an aluminum thin film layer, and the refractive index of the silicon dioxide layer is different from that of the aluminum thin film layer. In this way, surface plasma interference photoetching is achieved through the silicon dioxide layers and the aluminum film layers which are stacked in a multi-layer mode, and the photoetching resolution ratio is improved.

The invention provides cholic acid derivative resin and a preparation method thereof, photoresist and application thereof, and a photoetching method, and can be applied to the technical field of photoresist. According to the cholic acid derivative resin, bio-based cholic acid tert-butyl ester is used as a skeleton, and two functional groups including a diazonaphthoquinone sulfonate group and a tert-butyl ester group are introduced into molecules of the bio-based cholic acid tert-butyl ester to form a resin structure with a dual-sensitization characteristic. The photoresist composition comprises 10%-20% of the resin, 1%-5% of a photoacid generator, 1%-2% of an additive and an organic solvent. The composition shows high light transmittance in i-line photoetching, the sensitivity of the composition is lower than 130 mJ / cm, and patterning with the resolution of 64 nm can be achieved. The invention also provides a corresponding resin preparation method and a photoetching process, which are suitable for i-line projection photoetching, interference photoetching, near-field photoetching and super-resolution photoetching, and have the advantages of high resolution, environmental friendliness and good process compatibility.

The present invention relates to the field of extreme ultraviolet lithography technology, and a metal-containing extreme ultraviolet photoresist performance detection device comprises: a photoresist film preparation module, a pre-baking module, an extreme ultraviolet light source module, a photoresist exposure module, an atmosphere module, a chemical change detection module, a developing module, a hard-baking module, a photoresist pattern characterization module, an air pressure regulating module, a vacuum module and a vibration isolation module. Photoresist films of different thicknesses and good film-forming properties are prepared, and pre-baked, and then the above-mentioned photoresist films are exposed by extreme ultraviolet interference lithography, and the chemical changes of the photoresist after extreme ultraviolet irradiation, especially the changes of chemical bonds in organic ligands, are studied, and then developed, hard-baked, and the photoresist pattern is characterized. It can be used to study the influence of different atmospheres such as oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor on the photoresist lithography performance. This device can be used for the research and development of new extreme ultraviolet photoresists.

Provided is an EUV interference lithography system in which an interference fringe is formed in a photoresist by a plurality of diffracted light beams transmitted and diffracted from a transmissive mask, wherein the transmissive mask includes: a first pattern region and a second pattern region spaced apart from each other by a first distance; and a third pattern region and a fourth pattern region spaced apart from each other by a second distance greater than the first distance with the first pattern region and the second pattern region therebetween, and a plurality of patterns in the first to fourth pattern regions have the same pitch size.

The present application relates to a kind of multi-beam interference lithography device based on three parameters linkage collaborative control, belong to interference lithography technology, input pattern type, substrate type, target period and wavelength etc. preparation information by signal processing module, judge the difference of information input before and after;When information changes, linkage calibration unit is based on built-in formula automatically calculates the compensation angle of angle adjustment module, and from the pre-stored database, call matching phase and calculate phase difference, the calculation result is sent to laser assembly, angle adjustment module and phase adjustment module by signal processing module, drive laser assembly output coherent light, after dynamic calibration by angle / phase adjustment module, it is irradiated to the substrate photoresist layer of exposure module, form target pattern, the device is through target wavelength, angle, phase adaptive closed-loop control, break through the limitation of traditional single parameter adjustment, when switching preparation information, no need manual debugging optical path, significantly shorten adjustment time, improve the flexibility and lithography efficiency of multi-scene application.