17 results about "Interference lithography" patented technology

The invention discloses a preparation method of a polymer dispersed liquid crystal holographic grating with s polarization high diffraction characteristics, and belongs to the technical field of holographic optics. Raw materials comprise 60-90% of a thiol-ene monomer, 10-40% of liquid crystals, a photoinitiator accounting for 1.25% of the mass of the monomer, and a coinitiator accounting for 1.56% of the mass of the monomer. Light with the wavelength of 532 nm and the light intensity of 5-30 mW / cm < 2 > is used for carrying out double-interference photoetching to generate photochemical reaction so as to generate the polymer grating film, and the light is s polarized light. Under the optimal recording condition, delta n under s polarization can reach 1.93 * 10, and delta n under p polarization can reach 1.21 * 10. In combination with morphology analysis, it is found that refractive index modulation strongly depends on the proportion of a liquid crystal-rich phase to a polymer-rich phase in the grating. It is proved that the size of liquid crystal microdroplets formed by holographic recording is larger due to low recording intensity, and therefore the threshold driving voltage of the HPDLC grating is reduced.

According to the grid line perpendicularity adjusting method and device for the holographic diffraction grating double-beam exposure system, on the basis of the double-beam exposure system, a high-side sag substrate, a cube-corner prism, a rectangular prism, a horizontal adjusting table and a CCD are additionally arranged; a reflection reference surface is established through a cube-corner prism and a right-angle prism, and a to-be-exposed substrate with a high-precision positioning notch is combined, so that high-precision correction of an exposure light path is realized. The method effectively solves the problem that the perpendicularity of the grid line relative to the bottom reference surface of the substrate in double-beam holographic interference photoetching is insufficient, ensures that the prepared grating grid line has high perpendicularity precision, and remarkably improves the diffraction performance of the grating.

The present disclosure provides a laser interference lithography method, comprising: performing interference exposure on a wafer coated with photoresist; and performing patterned flood exposure on the interference-exposed wafer, wherein performing the flood exposure comprises: determining a first light field distribution in the interference-exposed wafer; determining a light field distribution of a flood light source for the flood exposure as a second light field distribution based on the first light field distribution, an intended pattern distribution, and parameters of the flood light source for the flood exposure; and patterning the light field distribution of the flood light source based on the second light field distribution, and controlling the flood light source with the patterned light field distribution to perform flood exposure on the interference-exposed wafer, thereby forming the intended pattern distribution in the flood-exposed wafer.

This invention discloses a multi-beam laser interference lithography system and method for periodic three-dimensional micro / nano structures. The system includes a laser, a diffraction element, a 4F collimation-beam control-focusing module, and a piezoelectric stick-slip precision motion system. The laser is perpendicularly incident on the diffraction element, which diffracts the beam into N sub-beams and one central beam distributed symmetrically. The 4F collimation-beam control-focusing module includes a first Fourier transform lens, a custom beam control frame, and a second inverse Fourier transform lens. The first Fourier transform lens collimates the umbrella-shaped N+1 beam generated by the diffraction element into a parallel N+1 beam. The custom beam control frame includes a half-wave plate and a polarizer along the optical axis. The second inverse Fourier transform lens focuses the parallel N+1 beams onto the same point on the sample. The lithography of the sample is completed by coordinating the spatial interference light field with the movement of the piezoelectric stick-slip precision motion system.

The invention discloses a surface plasma interference photoetching structure and a manufacturing method thereof, the surface plasma interference photoetching structure can be applied to the technical field of semiconductors, the surface plasma interference photoetching structure corresponds to ultraviolet light with the wavelength of 190-450 nm, and the surface plasma interference photoetching structure comprises a grating structure, a first laminated structure, a photoresist layer and a reflecting layer; the first laminated structure, the photoresist layer and the reflecting layer are sequentially arranged on the grating structure; the grating structure comprises an opening area which is periodically arranged, and the width of the opening area accords with a first preset threshold value; the first laminated structure is formed by stacking a silicon dioxide layer and an aluminum thin film layer, and the refractive index of the silicon dioxide layer is different from that of the aluminum thin film layer. In this way, surface plasma interference photoetching is achieved through the silicon dioxide layers and the aluminum film layers which are stacked in a multi-layer mode, and the photoetching resolution ratio is improved.

The invention provides cholic acid derivative resin and a preparation method thereof, photoresist and application thereof, and a photoetching method, and can be applied to the technical field of photoresist. According to the cholic acid derivative resin, bio-based cholic acid tert-butyl ester is used as a skeleton, and two functional groups including a diazonaphthoquinone sulfonate group and a tert-butyl ester group are introduced into molecules of the bio-based cholic acid tert-butyl ester to form a resin structure with a dual-sensitization characteristic. The photoresist composition comprises 10%-20% of the resin, 1%-5% of a photoacid generator, 1%-2% of an additive and an organic solvent. The composition shows high light transmittance in i-line photoetching, the sensitivity of the composition is lower than 130 mJ / cm, and patterning with the resolution of 64 nm can be achieved. The invention also provides a corresponding resin preparation method and a photoetching process, which are suitable for i-line projection photoetching, interference photoetching, near-field photoetching and super-resolution photoetching, and have the advantages of high resolution, environmental friendliness and good process compatibility.

The present application relates to a kind of multi-beam interference lithography device based on three parameters linkage collaborative control, belong to interference lithography technology, input pattern type, substrate type, target period and wavelength etc. preparation information by signal processing module, judge the difference of information input before and after;When information changes, linkage calibration unit is based on built-in formula automatically calculates the compensation angle of angle adjustment module, and from the pre-stored database, call matching phase and calculate phase difference, the calculation result is sent to laser assembly, angle adjustment module and phase adjustment module by signal processing module, drive laser assembly output coherent light, after dynamic calibration by angle / phase adjustment module, it is irradiated to the substrate photoresist layer of exposure module, form target pattern, the device is through target wavelength, angle, phase adaptive closed-loop control, break through the limitation of traditional single parameter adjustment, when switching preparation information, no need manual debugging optical path, significantly shorten adjustment time, improve the flexibility and lithography efficiency of multi-scene application.

The invention belongs to the technical field of laser interference photoetching, and particularly relates to a processing device for increasing an electric conduction area in laser interference photoetching, which comprises a laser light source, a diaphragm, a shutter, a diffraction beam splitter, a collimating prism, a linear polarizer, a continuous neutral density optical filter and an aspheric condensing lens. Wherein the laser light source outputs stable single-wavelength Gaussian light, the diaphragm is used for controlling the diameter and the shape of a laser beam, the shutter controls the exposure dose through opening and closing, the light beam is divided into two pairs of + / -1-level diffracted light through the diffraction beam splitter, and after the diffracted light is collimated by the collimating prism, the polarizing film converts non-polarized light into linearly polarized light. The continuous neutral density optical filter is used for adjusting diffraction light power, and the aspheric condensing lens converges light beams to a focus. The prismatic micro-nano structure array can be prepared on the surface of the conductive material through the device, and the specific surface area of the material is increased, so that the transmission density of current in the material is increased, the conduction resistance of the material is reduced, and the conductive efficiency of the material is finally improved.

The invention relates to the technical field of optical display, in particular to a waveguide and a preparation method of an emergent coupling grating thereof, which are suitable for preparing large-area waveguides and can be applied to an augmented reality head-up display for a vehicle. According to the preparation method, a preset emergent coupling grating is defined on a substrate so as to carry out partition operation, the range of each partition is deviated from the center of the preset emergent coupling grating to the two ends, and the line width ratio of the grating formed by interference photoetching in the edge area of at least one partition is within a preset threshold value. Then, the first region is etched according to the set of set etching depths, and the second region is etched preferentially according to the set of etching depths of the first region, so that the purpose of reducing repeated etching among the sub-regions is achieved.

The invention discloses a scanning interference photoetching device, relates to the technical field of interference photoetching for micro-nano structure manufacturing, and solves the problems that an existing scanning interference photoetching system is complex in structure and is easily influenced by a boundary environment; the interference pattern parameter adjusting device comprises a phase measuring element, a phase measuring detector and a diaphragm which are fixed on a supporting structure, wherein the phase measuring element, the phase measuring detector and the diaphragm are fixed on the supporting structure; the Lloyd mirror is connected with the supporting structure through piezoelectric ceramics, the supporting structure is fixed to the base, the translation table conducts two-dimensional translation movement relative to the base, and the displacement measuring device measures the translation displacement variation of the translation table relative to the base. According to the invention, the interference pattern is formed in a wavefront splitting mode, the structure composition and period adjustment are simple, high stability is easy to obtain, and the adjustment of interference pattern parameters is more convenient. And the problem of high difficulty in obtaining and processing a large-area loyd mirror material is avoided.

The invention belongs to the technical field of illumination, and discloses a full-spectrum healthy LED light source device with an eye health care function. The device comprises a circular positive light source irradiating downwards, a circular-ring-shaped backlight source irradiating upwards and a circular central light source which is located in the center of the circular-ring-shaped backlight source and irradiates upwards. The two kinds of white light lamp beads and the three kinds of red light lamp beads are installed on PCBs of the three kinds of light sources according to the number ratio calculated according to spectral energy distribution. Full-spectrum white light generated by the white light lamp beads is matched with red light which is generated by the red light lamp beads and has narrow half-wave width and easy-to-control spectral energy, and finally formed mixed light has the effect of preventing myopia under simultaneous illumination of the front light source and the back light source; the central light source is matched with the lens to irradiate light spots which continuously change and move on the light screen to drive eyeballs to do corresponding movement, so that the eyes and peripheral muscles are driven to move, and the effects of promoting blood circulation and playing a role in eye health care are achieved; the 1060 aluminum surface prepared through double-beam interference photoetching has a high-hydrophobicity self-cleaning function.

This invention proposes a method for optimizing the dose uniformity of laser interference lithography stitching based on Gaussian beam fitting, belonging to the field of ultra-precision micro / nano manufacturing technology. Addressing the stitching unevenness problem caused by beam distortion and finite boundary effects in large-area stepping interference lithography, this invention acquires actual interference light field images and performs global two-dimensional Gaussian fitting to accurately extract spot feature parameters. Based on this, a dose accumulation model under finite dot matrix scanning is constructed, and the optimal two-dimensional step displacement that can compensate for local interference troughs and macroscopic attenuation envelope is calculated through optimization. Simultaneously, an exposure dose constraint mechanism is introduced to limit the cumulative total light intensity within the development threshold range to prevent photoresist overexposure degradation caused by high overlap. Finally, the optimal parameters are output and used to control the positioning stage for precise exposure. This invention effectively overcomes the obvious gaps and energy distortion caused by traditional fixed-spacing stitching, achieving high-quality, seamless stitching manufacturing of large-area holographic gratings.

The embodiment of the invention relates to the technical field of micro-nano structure photoetching, and discloses a Laue mirror interference photoetching system and photoetching method based on collimated flat-topped light. The photoetching system comprises a laser device, a spatial filter, a polarization type continuous variable light attenuation system, a beam shaping system and a Laue mirror interference system which are sequentially arranged at intervals in the light path transmission direction, and laser generated by the laser device enters the polarization type continuous variable light attenuation system after passing through the spatial filter; the polarization type continuously adjustable light attenuation system is used for continuously and adjustably attenuating the intensity of the laser; the light beam shaping system is used for shaping and converting the laser beam output by the polarization type continuous adjustable light attenuation system into collimated flat-topped light; the Laue mirror interference system carries out interference processing on the straight flat-topped light and generates interference fringes on the sample stage. Through the mode, the grating duty ratio uniformity and efficiency of the interference photoetching technology can be improved, the complexity of a photoetching system can be reduced through Laue mirror single-beam interference photoetching, and the reliability is improved.

Arrangement of optical elements for forming large-area structures (9) with linear structural elements on surfaces of components and / or in the volume of components by means of direct laser interference structuring and interference lithography, in which a laser beam (8) is directed onto an optical element (1) which is designed to split the laser beam (8) into at least two partial beams (8.1 and 8.2), wherein the partial beams (8.1 and 8.2) strike at least one first cylindrical lens (2) with at least one convex surface and are aligned such that they strike at least one second cylindrical lens (3), and the at least one first cylindrical lens (2) and / or the at least one second cylindrical lens (3) are designed and arranged at a distance relative to the first cylindrical lens (2) and the component such that the partial beams (8.1 and 8.2)2) are focused in the direction of a component in a common plane, and the partial beams (8.1 and 8.2) interfere with each other in a region, whereby rectangular or elliptical structures (9) of a predefinable length in an axis direction that is oriented perpendicular to the optical axis of the laser beam (8), and with linear structural elements, predefinable structure period Λ, which are arranged parallel and next to each other, can be formed as a result of a locally defined material removal and / or a modification of component material, which is achievable by the energy input of the partial beams (8.1 and 8.2) into the component material in the region in which the partial beams (8.1 and 8.2) interfere with each other.

A method for expanding the diffraction efficiency bandwidth of a pulse-compressed gold grating, characterized by utilizing the self-shielding effect of grating coating and the local melting of ultra-short pulse laser irradiation to regulate the structure of the light-incident surface of the grating ridge. The method comprises the following steps: grating mask preparation, magnetron sputtering gold film plating to generate a raised structure at the bottom of the groove, constructing a data set of grating groove shape and diffraction efficiency and plating parameters, ultra-short pulse laser irradiation, constructing a data set of grating groove shape and diffraction efficiency and irradiation parameters, and two-dimensional plane scanning grating by laser. The raised structure at the bottom of the grating groove can be precisely regulated, and the inclined surface structure can be precisely regulated, so that the high diffraction efficiency region of the original grating is expanded to the short wave. The method is compatible with the whole set of processes of holographic interference lithography gold grating, the product aperture can be expanded to meters, and the method has important economic and practical value in the field of high-energy lasers.

The present disclosure provides a deep ultraviolet interference lithography method, which can be applied to the field of semiconductor technology. The method comprises: preparing a multilayer structure, comprising: a substrate; a second metal layer arranged on the substrate; an isolation layer arranged on the side of the second metal layer away from the substrate; a photoresist layer arranged on the side of the isolation layer away from the substrate; a first metal layer arranged on the side of the photoresist layer away from the substrate; and a nanometer grating arranged on the side of the first metal layer away from the substrate. A lithography process is performed on the photoresist layer by using the nanometer grating to obtain a photoresist pattern; wherein the difference between the refractive index of the isolation layer and the photoresist layer is smaller than the difference between the refractive index of the isolation layer and the second metal layer.

The invention discloses a processing device and method for increasing an electric conduction area through laser interference photoetching, and belongs to the technical field of laser interference photoetching. A processing device for increasing an electric conduction area through laser interference photoetching comprises a laser light source, a diaphragm is fixed behind the laser light source, a shutter is fixed behind the diaphragm, a diffraction beam splitter is fixed behind the shutter, a collimating prism is fixed behind the diffraction beam splitter, and the collimating prism is fixed behind the laser light source. A first linear polaroid, a second linear polaroid, a third linear polaroid and a fourth linear polaroid are respectively fixed behind the collimating prism; and the first linear polaroid, the second linear polaroid, the third linear polaroid and the fourth linear polaroid are positioned on the same plane and are arranged in a circumferential array. The prismatic micro-nano structure array is prepared on the surface of the conductive material, so that the specific surface area of the material is increased, the transmission density of current in the material is increased, the conduction resistance of the material is reduced, and the conductive efficiency of the material is finally improved.