Three-beam interference lithography method and system

A technology of interference lithography and interference system, which is applied in the direction of microlithography exposure equipment, photolithography exposure device, etc., can solve the problems of long chemical etching processing time, limited processing format, cumbersome process, etc., and achieve low cost and high processing efficiency. The effect of high efficiency and smooth surface of the steps

Inactive Publication Date: 2012-10-17
SUZHOU UNIV
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Problems solved by technology

The main disadvantages of this method are: 1. More than two steps need to be engraved multiple times, and the process is cumbersome; 2. The processing time of chemical etching is very long and the efficiency is low; 3. Chemical etching r

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  • Three-beam interference lithography method and system
  • Three-beam interference lithography method and system
  • Three-beam interference lithography method and system

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[0038] The present invention proposes a processing method based on interference lithography and multiple exposure superposition, the basic idea is to use interference lithography to obtain a light intensity distribution close to the ideal cosine type, and then make the cosine type light intensity dislocation through multiple exposures Superposition, so that the total light intensity distribution is a horizontal straight line, so as to obtain a flat-topped stepped structure.

[0039] In order to achieve the above purpose, the embodiment of the present invention discloses a three-beam interference lithography method. After the laser beam is split into three beams by the phase grating, N times of interference exposure is realized on the surface of the workpiece. Dislocation value is d I / N, where N is an odd number greater than or equal to 3, d I is the period of the light intensity distribution after exposure, and the three beams are respectively the first beam and the second b...

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Abstract

The invention discloses a three-beam interference lithography method and a system. The method comprises that: a laser beam is divided into three beams by phase grating and then N times of interference exposure are realized on surface of a workpiece; a dislocation value of two adjacent exposure positions is dI/N, wherein N is an odd number greater than or equal to 3, and dI is a light intensity distribution cycle after the exposure; and the three beams are respectively a first beam, a second beam and a 0 beam with the same complex amplitude. With the three-beam interference lithography method of the invention, a large-size precision multi-level structure can be directly prepared in photoresist with high processing energy efficiency and the components used are easily obtained and have low cost. In addition, by adopting the three-beam interference exposure, the grating and the system have no zero elimination requirement and are easy to prepare.

Description

technical field [0001] The invention belongs to the field of interference lithography, and in particular relates to a three-beam interference lithography method and system. Background technique [0002] Multi-step structure is a typical and basic three-dimensional structure, which is widely used in many fields such as semiconductor, micro-optic device, micro-electromechanical system (MEMS) and flat panel display. In these applications, the requirements for the number of steps, dimensional accuracy and surface roughness of the multi-step structure are very low: the number of steps is generally 2 to 4 steps, and the accuracy of the height of the steps is required to be about a few tenths of a micron to a few microns, and the surface of the steps The roughness is required to be about a few tenths of a micron. In terms of processing methods, it can be realized by various methods such as mask lithography and laser direct writing. [0003] However, for some special application f...

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Application Information

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IPC IPC(8): G03F7/20
Inventor 浦东林胡进
Owner SUZHOU UNIV
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