A
semiconductor device having both high strength and high
thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated
semiconductor module device has a configuration where a
silicon nitride plate 2 with a thickness of 0.635 mm has
copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active
metal. A
copper plate 3a is bonded to the surface side of the
silicon nitride plate 2, and a prescribed circuit pattern is formed on the
copper plate 3a.
Tin-silver-copper cream solder
layers 4a and 4b with a thickness of 200 μm are formed at a prescribed location on the circuit pattern 3a on which a
semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed.
Nickel particles 5 having a maximum particle size of 100 μm and an average particle size of 70 μm are dispersed in the solder 4a on the base plate 1 of good
thermal conductivity. A semiconductor element (
chip) 6, the circuit board 1a, and the base plate 1 are disposed on predetermined locations. Thereafter, they are set in a
reflow oven (not shown in the drawings) for
reflow soldering. After the inside of the
reflow oven is replaced by a
nitrogen atmosphere, the
reflow oven is heated to 280° C. At the time when solder is melted, the inside of the oven is decompressed to 1 Pa,
nitrogen is introduced, and the reflow oven is cooled to about
room temperature, thereby completing the solder bonding step. After flux is washed, an outer case 7 with an insert-molded outlet terminal 8 is adhered to the base plate 1 and a predetermined connection is conducted via an aluminum bonding wire 9. Then,
silicone gel 10 is injected into a
package delimited via the base plate 1 and the outer case 7, and the
silicone gel 10 is heat-hardened, thereby completing a resin encapsulated
semiconductor device A.