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539results about How to "Convenient binding" patented technology

Traffic violation snapshotting system and traffic violation snapshotting method

ActiveCN103337176AHave social benefitsReduce limited police resourcesDetection of traffic movementPassive infrared sensorAutomatic control
The invention relates to a traffic violation snapshotting system and a traffic violation snapshotting method. A device comprises an L-shaped metal rod piece, a passive infrared sensor, a sensor signal amplification and shaping circuit, a camera, an image collector, a photographing light supplement lamp, a synchronous light supplement controller, a signal lamp detection circuit, a snapshotting system controller, a warning lamp, a voice output device and a video output device. The method detects non-motorized vehicles and pedestrians by adopting the passive infrared sensor, conducts automatic control, snapshotting and evidence obtaining on a behavioral course of a field violated person to serve as off line data processing, is applicable to the field of road traffic, obtains images and videos of the non-motorized vehicles violating the traffic and violation behaviors of the pedestrians in real time, is applicable to the snapshotting and the evidence obtaining of the violation behaviors of the non-motorized vehicles and the pedestrians on a road at present, has an acousto-optic warning function, can prompt the violated non-motorized vehicles and the pedestrians, can store the videos and the images, and facilitates later data statistics, analysis and calling.
Owner:沈阳天久信息技术工程有限公司

Method and system for binding of television terminal and mobile terminal and achieving switching showing

The invention relates to the technical field of IPTV and discloses a method and system for binding of a television terminal and a mobile terminal and achieving switching showing. The mobile terminal obtains the identification of the television terminal by code scanning, the identification of the mobile terminal and the obtained identification of the television terminal are sent to a screen switching server, and the screen switching server binds the mobile terminal and the television terminal according to the identification of the mobile terminal and the identification of the television terminal. When switching showing is needed, a user browses video website content through the mobile terminal, a content source is obtained, screen switching instructions are sent to the screen switching server, and after the screen switching server receives the screen switching instructions, the content source obtained by the mobile terminal is transmitted to the television terminal bound with the mobile terminal. The television terminal sends a showing request to the content source. Binding of the television terminal and the mobile terminal is carried out in a code scanning mode, and binding of the television terminal and the mobile terminal is achieved quickly.
Owner:上海昌视网络科技有限公司

High-frequency and low-noise gallium nitride transistor structure with high electronic mobility

The invention relates to a high-frequency and low-noise gallium nitride transistor structure with high electronic mobility. The structure comprises a substrate, an aluminium nitride nucleating layer arranged on the substrate and a gallium nitride cushioning layer arranged on the aluminium nitride nucleating layer; the substrate, the aluminium nitride nucleating layer and the gallium nitride cushioning layer are sequentially overlapped from bottom to top; the high-frequency and low-noise gallium nitride transistor structure with the high electronic mobility is characterized in that an InGaN inserting layer for improving roughness of a component interface, an aluminium nitride inserting layer for improving a potential barrier, an AlGaN isolating layer, an AlGaN electronic providing layer, an AlGaN potential barrier layer as well as a source electrode, a grid electrode and a drain electrode which are respectively in ohm connection with the AlGaN potential barrier layer are sequentially overlapped on the gallium nitride cushioning layer. The high-frequency and low-noise gallium nitride transistor structure has the beneficial effects that two-dimensional electronic gas is better bound in a potential well, therefore, scattering of the two-dimensional electronic gas caused by impurities in a channel layer is reduced, and a saturated rate and a mobility ratio of the two-dimensional electronic gas are increased, and a noise performance of a device is improved, particularly a high-frequency noise performance.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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