896results about How to "Reduce misalignment" patented technology

A staple line buttress material having an adhesive surface, packaged and provided in sterile, ready-to-use form. The material can be used to retrofit surgical staplers to provide an improved staple line, and with improved ease of use.

A liquid crystal display device having fingerprint identification device for enhancing aperture ratio and transmissivity of a TFT-LCD panel is disclosed. A fingerprint identification substrate (400) is attached to a TFT substrate (300). The TFI substrate has color-filter-on-array structure in which the color filters (336) and the thin film transistors can be eliminated, the aperture ratio is increased, and the quality of image display is enhanced. In addition, the transmissivity is increased according to the decrease of the number of glass substrate used in the liquid crystal display device, so that the sensitivity of fingerprint identification is enhanced.

A rotary union is integrated into the interior of a heavy-duty vehicle hub cap. The hub cap includes a cylindrical sidewall, and an outboard wall that is integrally formed with an outboard end of the sidewall, and which extends generally perpendicular to the sidewall. The hub cap also includes a radially-extending flange that is formed on an inboard end of the sidewall, which receives fasteners to mount the hub cap on a wheel hub. The sidewall and the outboard wall form an interior compartment in the hub cap, and a rotary union is mounted to the hub cap in the interior compartment. The rotary union is mounted on the inboard surface of the outboard wall of the hub cap and is in general axial alignment with an axial centerline of a wheel end assembly, providing fluid communication from a tire inflation system to the tires of the vehicle.

A stage apparatus has a stage movable in a first direction and first and second measurement systems measuring a position of the stage in a predetermined direction. The first and second measurement systems each has a laser interferometer and a mirror system including a first reflecting mirror elongated in the first direction. A measurement value is transferred from one measurement system in use to the other measurement system and the measurement system in use is switched between the first and second measurement systems within a overlapping zone where said first and second measurement system can simultaneously measure the position of the stage. In the switch, the measurement value to be transferred is corrected based on a difference in the lengths of the light paths due to a shape of a surface of the first reflecting mirror of the first and second measurement systems.

Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH₃ pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH₃ pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH₃ pulsed supply AlN growth method.

A speed reduction gear train comprising a sun gear, an annular gear, and planet gears meshing with the sun gear and the annular gear and mounted in a cage having axial housings between pairs of adjacent planet gears. The cage is connected to a cage carrier having axial arms received in the housings by radial pins disposed in the midplane of the cage by means of spherical finger connections allowing the cage carrier to tilt and to move axially relative to the cage.

A process for manufacturing a bipolar type semiconductor device in which at least a part of a region where an electron and a hole are recombined during current flowing is formed with a silicon carbide epitaxial layer that has been grown from the surface of a silicon carbide substrate, is characterized by that the surface of the silicon carbide substrate is treated by hydrogen etching and the epitaxial layer is then formed by the epitaxial growth of silicon carbide from the treated surface. A propagation of a basal plane dislocation to the epitaxial layer can be further reduced by treating the surface of the silicon carbide substrate by using chemical mechanical polishing and hydrogen etching in this order.

Semiconductor device structures are provided that are suitable for use in the fabrication of electronic devices such as light emitting diodes. The semiconductor device structures include a substrate having a roughened growth surface suitable for supporting the growth of an epitaxial region thereon. The device structure can include an epitaxial region having reduced defects and/or improved radiation extraction efficiency on the roughened growth surface of the substrate. The roughened growth surface of the substrate can have an average roughness R_a of at least about 1 nanometer (nm) and an average peak to valley height R_z of at least about 10 nanometers (nm).

A manufacturing method is provided for a silicon carbide semiconductor substrate adapted for reduced basal plane dislocations in a silicon carbide epitaxial layer. Between a silicon carbide epitaxial layer for device fabrication (i.e., a drift layer) and a base substrate formed of a silicon carbide single-crystal wafer, a highly efficient dislocation conversion layer through which any basal plane dislocations in the silicon carbide single-crystal wafer are converted into threading edge dislocations very efficiently when the dislocations propagate into the layer epitaxially grown is provided by epitaxial growth. Assigning to the dislocation conversion layer a donor concentration lower than that of the drift layer, therefore, allows the above conversion of a larger number of basal plane dislocations than the case where the drift layer exists alone (without the dislocation conversion layer).

A projector which projects an image onto a projection surface, and displays it thereon, includes: a light source; a light modulator which modulates light from the light source into an image light representing the image; a projection optical system which projects the image light modulated by the light modulator onto the projection surface; a keystone distortion correction section which carries out a keystone distortion correction process for correcting a keystone distortion of the image projected onto the projection surface; a detection section which detects a stop of a movement of the projector; and a control section which, on the stop of the movement of the projector being detected in the detection section, causes the keystone distortion correction section to start the keystone distortion correction process in accordance with a relative positional relationship between the projector after being moved and the projection surface.

To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of: epitaxial-growing a GaN layer 33 with a GaN low temperature grown buffer layer 32 upon a sapphire substrate 31; removing the sapphire substrate 31, the GaN buffer layer 32 and a small portion of the GaN layer 33 from the substrate taken out of a growth reactor to obtain a self-supporting GaN substrate 35; and after that, heat-treating the GaN substrate 35 by putting it into an electric furnace under the NH3 atmosphere at 1200° C. for 24 hours; which leads to a marked reduction of the warp of the self-supporting GaN substrate 35 such that dislocation densities of its obverse and reverse surface are 4x10<7 >cm<-2 >and 8x10<5 >cm<-2>, and thereby such a low ratio of dislocation densities of 50 is well-controlled.

The invention integrally arranges a lens, an optical filter, a semiconductor imaging device, on-chip components, and a printed circuit board on a three-dimensional circuit board and contrives the lens attachment structure, bonding method, color of an adhesive, masking of the lens, etc. in order to implement a structure that allows high performance, compact, lightweight and rigid design, and mass production, as well as a high-quality picture.

A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

There is described a camera setup for capturing omnistereo images using a minimum of three cameras with ultra wide angle lenses and a method for generating a substantially 360 degree view from images taken from the cameras. The field of view covered in stereo may be a dome. The baseline between pairs of cameras defines epipoles which can be used for stitching without any horizontal misalignments due to parallax. The method comprises capturing the images from a plurality of cameras fixed at a baseline height substantially equidistantly about a circle; and stitching together portions of the images from each one of the plurality of cameras along first and second borders corresponding at least in part to lines joining center points of neighboring ones of the plurality of cameras.

A method of transferring a plurality of toner images formed on a plurality of image carriers of different colors onto a sheet-type recording medium includes forming a mark image for adjusting a transfer position on each of the image carriers as a toner image; transferring the mark images to a common transfer medium; detecting optically a mutual positional relationship between the mark images; and controlling linear velocities of the image carriers based on a result of detecting the mutual positional relationship between the mark images, to transfer the toner images onto the sheet-type recording medium with a reduced misalignment between the toner images.

The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm².

An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.

In a lens device, plastic lenses having circular outer periphery are placed in a plastic lens-barrel having an octagonal or more complex polygonal inner surface in such a way that the outer peripheral surfaces of the lenses are press contacted to the inner surface of the polygonal shape. This lens device has press contact portions that are pressed by the lens outer peripheral surface and the lens-barrel inner surface in the vicinity and in both sides of gate traces where optical axis displacement is large so as to suppress the displacement of the gate trace by the press contact portions.