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435results about How to "Prevent dislocation" patented technology

Intraocular lens with accommodative properties

InactiveUS6200342B1Focus assistPrevent excessive lateral movement and luxationIntraocular lensPupil diameterIntraocular lens
A new lens design and method of implantation uses the change in pupil diameter of the eye concurrent with the changes induced by a contraction of the ciliary muscle during the accommodative reflex, in order to assist in focusing of nearby objects. This new intraocular lens consists of two parts. The posterior part or haptic part is inserted behind the iris and in front of the natural lens or artificial implant. Its main purpose is to participate in the accommodative mechanism and to prevent excessive lateral movement and luxation of the lens. An anterior or optical part is made of flexible material and is placed before the iris. Its diameter is variable but should be large enough to cover the pupillary margins to some degree under various conditions of natural dilation. The anterior and posterior part of the lens are separated by a compressible circular groove in which the iris will settle. The diameter of this groove is slightly larger than the pupillary diameter measured under normal photopic daylight conditions and for distance vision. Since the pupil becomes smaller in near vision, the iris will exert a slight pressure at the level of the groove of the lens which will cause a progressive and evenly distributed flexing of the anterior part of the intraocular lens, as the diameter of the compressible circular groove slightly decreases. This flexing will induce an increase in refractive power which corresponds to a variable part of the amount necessary for focusing nearby objects.
Owner:TASSIGNON MARIE JOSE B

Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery

The invention discloses a manufacturing method of a GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery. By utilizing a wafer bonding method, the GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery is integrated by a GaInP/GaAs double-junction solar battery growing based on a GaAs substrate and a InGaAsP/InGaAs double-junction solar battery growing based on an InP substrate; by utilizing the InP as a supporting substrate, the four-junction solar battery with respective band gap energies of 1.9/1.4/1.05/0.72 eV is realized, sunlight full spectral absorption and energy conversion are realized to a greater degree, and 32.8 percent of efficiency is realized in irradiation of AM1.5G and under the sun. Based on the development of two kinds of double-junction batteries, the bonded four-junction solar battery reduces the shortages of high cost caused by utilizing a plurality of different substrates in a mechanical cascade solar battery system and complex optical system and optical loss in an optical integrated battery, and effectively solves the problem of lattice mismatching of growing a uniwafer four-junction cascade semiconductor solar battery material. The high voltage and low current outputs are realized and the resistance consumption in a high concentrator battery is reduced.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Lamination preparation process of curved-surface double-glass photovoltaic module

The invention discloses a lamination preparation process of a curved-surface double-glass photovoltaic module. Firstly, a layer of binding material covers face plate bent glass, a solar cell is arranged on the binding material, a layer of binding material covers the solar cell, and then rear plate bent glass covers on the binding material. After the panel bent glass is aligned to the rear plate bent glass, a vacuum rubber ring is sleeved on the periphery of the face plate bent glass and the rear plate bent glass, the solar cell and the two layers of binding materials are enabled to be in a closed space formed by the face plate bent glass, the rear plate bent glass and the vacuum rubber ring, the closed space is vacuumized then, the face plate bent glass and the rear plate bent glass compact the solar cell and the binding materials arranged between the face plate bent glass and the rear plate bent glass to prevent relative sliding, and an assembly to be packaged is obtained. The assembly to be packaged is placed into a high-pressure autoclave laminating machine to be carried out with lamination, and the vacuum rubber ring is removed and the curved-surface double-glass photovoltaic module is obtained after the lamination. The lamination preparation process of the curved-surface double-glass photovoltaic module can utilize one device to prepare photovoltaic modules with different radiuses of curvature.
Owner:CHINA SUNERGY CO LTD

Multilayer composite membrane passivation structure of table top high-power semiconductor device and manufacturing technology of multilayer composite membrane passivation structure of table top high-power semiconductor device

The invention discloses a multilayer composite membrane passivation structure of a table top high-power semiconductor device. The multilayer composite membrane passivation structure comprises P-type boron junction areas and an N-type phosphorus junction area, the upper end and the lower end of the N-type phosphorus junction area are provided with the P-type phosphorus areas respectively, and an alpha-polycrystalline silicon layer, a semi-insulating polycrystalline silicon thin membrane, a low-temperature heat oxidation layer, a high-temperature Si3N4 thin membrane, a negative charge glass passivation layer and a low-temperature heat oxidation layer are sequentially arranged on the surface of a PN junction of a table top of the table top high-power semiconductor device from inside to outside. A manufacturing technology of the multilayer composite membrane passivation structure of the table top high-power semiconductor device includes the following steps: a, depositing the alpha-polycrystalline silicon, b, depositing semi-insulating polycrystalline silicon, c, depositing the low-temperature heat oxidation layer, d, depositing Si3N4, e, conducting passivation on glass, and f, depositing the low-temperature heat oxidation layer in the outmost layer. The multilayer composite membrane passivation structure and the manufacturing technology have the advantages that the alpha-polycrystalline silicon layer is deposited, so that crystal lattice adaptation can be achieved, damage to crystal lattices of a silicon wafer in a groove can be repaired, leaked currents in the surfaces of junctions are reduced, and the stability and the reliability of the device at the high temperature are improved.
Owner:江苏吉莱微电子股份有限公司

Door body for refrigerator and refrigerator with same

The invention provides a door body for a refrigerator and the refrigerator with the same. The door body comprises a body, a pre-buried box and a circuit board assembly, wherein the pre-buried box is arranged in the body in a direction which forms a preset angle with the vertical direction; the pre-buried box is communicated with the upper surface of the body so as to form a faucet with the upper surface; the lower end part of the pre-buried box is connected with the right surface of the body; the circuit board assembly is matched with the pre-buried box; and the circuit board assembly is inserted into the pre-buried box through the faucet. According to the door body, the position of the pre-buried box is more firm; and the circuit board assembly is displayed closer to one side of the doorbody, so that the display is more attractive; according to the refrigerator, the position of the display circuit board of the door body can be regulated as required through the position of the presetpre-buried box, so that the display position on the refrigerator is more flexible in design and the selection of a user is more diverse; in addition, the display position of the refrigerator is more fixed, so that dislocation between the display position and a transparent hollowed window of the door body is avoided.
Owner:HEFEI MIDEA REFRIGERATOR CO LTD +1

Method for epitaxial growth of high-quality and large-size monocrystalline diamond

The invention discloses a method for epitaxial growth of high-quality and large-size monocrystal diamond, and belongs to the field of preparation of semiconductor materials. The method is characterized in that the surface roughness of a large-size single crystal diamond sheet grown through mosaic splicing is reduced to be lower than 0.2 nm through precision polishing; then electron beam evaporation is adopted to deposit metal nickel with the thickness of 100-200 nm on the surface of a substrate at the speed of 0.01-0.1 nm/s while the substrate is heated at the temperature of 100-500 DEG C, andthen metal iridium is deposited at the speed of 0.01-0.5 nm/s; after the thickness of iridium reaches 15-40 nm, the temperature of the heated substrate is increased to 700-1000 DEG C, meanwhile, thedeposition speed is increased to 0.5-1 nm/s, and finally, an iridium thin layer with the total thickness of 150-300 nm is deposited; then a plasma chemical vapor deposition technology is adopted to pre-deposit a 4-10 nm amorphous carbon layer after the iridium surface is cleaned by hydrogen plasma so as to promote the enrichment of carbon atoms on the sub-surface of the iridium thin layer; and finally, after the substrate is subjected to pure hydrogen plasma etching for 6-15 s, the negative bias voltage and the methane flux are regulated to achieve bias voltage in-situ nucleation of the large-size single crystal diamond on the iridium surface and subsequent non-bias voltage epitaxial growth.
Owner:UNIV OF SCI & TECH BEIJING
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