Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery

A technology of solar cells and manufacturing methods, applied in the field of solar photovoltaics, can solve problems such as increasing battery manufacturing costs, increasing battery efficiency factors, and increasing battery process difficulties, so as to improve photoelectric conversion efficiency, eliminate factors affecting device performance, and reduce The effect of small heat loss

Inactive Publication Date: 2011-01-19
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

Therefore, it is necessary to obtain a thin layer of Ge before bonding, which will greatly increase the process difficulty of battery development.
In addition, the four-junction cell that matches the solar spectrum can also be obta

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  • Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery
  • Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery

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[0019] In order to make the above objectives, features and advantages of the present invention more obvious and easy to understand, the following is specifically described in detail in conjunction with specific embodiments of the present invention as follows:

[0020] 1) Cell growth before bonding

[0021] As shown in FIG. 1, it is a schematic diagram of the battery structure before and after the bonding of the GaInP / GaAs / solar cell and the InGaAsP / InGaAs solar cell used in the present invention. It can be clearly seen from the figure that the double-junction battery first grows GaAs battery on GaAs substrate, and then grows lattice-matched GaInP battery; grows lattice-matched InGaAs battery on InP substrate, and then grows lattice Matched InGaAsP battery. Because they are all grown by lattice matching, it will not increase the difficulty of material growth due to lattice mismatch, and will not cause dislocations due to the stress release of the epitaxial layer, which will affect ...

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Abstract

The invention discloses a manufacturing method of a GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery. By utilizing a wafer bonding method, the GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery is integrated by a GaInP/GaAs double-junction solar battery growing based on a GaAs substrate and a InGaAsP/InGaAs double-junction solar battery growing based on an InP substrate; by utilizing the InP as a supporting substrate, the four-junction solar battery with respective band gap energies of 1.9/1.4/1.05/0.72 eV is realized, sunlight full spectral absorption and energy conversion are realized to a greater degree, and 32.8 percent of efficiency is realized in irradiation of AM1.5G and under the sun. Based on the development of two kinds of double-junction batteries, the bonded four-junction solar battery reduces the shortages of high cost caused by utilizing a plurality of different substrates in a mechanical cascade solar battery system and complex optical system and optical loss in an optical integrated battery, and effectively solves the problem of lattice mismatching of growing a uniwafer four-junction cascade semiconductor solar battery material. The high voltage and low current outputs are realized and the resistance consumption in a high concentrator battery is reduced.

Description

technical field [0001] The invention relates to a photovoltaic storage device utilizing solar energy, in particular to a structural design and device preparation of a four-junction solar cell, belonging to the field of solar photovoltaic technology. Background technique [0002] Stimulated by the energy crisis triggered in the 1970s and driven by the demand for space vehicle energy systems, the field of photovoltaic technology has continuously made breakthroughs. Crystalline silicon solar cells, amorphous silicon solar cells, amorphous silicon thin-film solar cells, III-V compound semiconductor solar cells, II-VI compound semiconductor polycrystalline thin-film solar cells, etc., more and more solar cell technologies are maturing . The continuous improvement of photoelectric conversion efficiency and the continuous reduction of manufacturing costs have enabled photovoltaic technology to be widely used in space and on the ground. Looking back at the development of photovolt...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 赵勇明陆书龙董建荣任雪勇熊康林何巍杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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