Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery
A technology of solar cells and manufacturing methods, applied in the field of solar photovoltaics, can solve problems such as increasing battery manufacturing costs, increasing battery efficiency factors, and increasing battery process difficulties, so as to improve photoelectric conversion efficiency, eliminate factors affecting device performance, and reduce The effect of small heat loss
Inactive Publication Date: 2011-01-19
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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The invention discloses a manufacturing method of a GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery. By utilizing a wafer bonding method, the GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery is integrated by a GaInP/GaAs double-junction solar battery growing based on a GaAs substrate and a InGaAsP/InGaAs double-junction solar battery growing based on an InP substrate; by utilizing the InP as a supporting substrate, the four-junction solar battery with respective band gap energies of 1.9/1.4/1.05/0.72 eV is realized, sunlight full spectral absorption and energy conversion are realized to a greater degree, and 32.8 percent of efficiency is realized in irradiation of AM1.5G and under the sun. Based on the development of two kinds of double-junction batteries, the bonded four-junction solar battery reduces the shortages of high cost caused by utilizing a plurality of different substrates in a mechanical cascade solar battery system and complex optical system and optical loss in an optical integrated battery, and effectively solves the problem of lattice mismatching of growing a uniwafer four-junction cascade semiconductor solar battery material. The high voltage and low current outputs are realized and the resistance consumption in a high concentrator battery is reduced.
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