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722results about How to "Inhibit temperature rise" patented technology

Method for manufacturing soi substrate and semiconductor device

An object is to provide a method for manufacturing an SOI substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate having a low heat resistant temperature, such as a glass substrate or the like, is used. Another object is to manufacture a highly reliable semiconductor device using such an SOI substrate. An SOI substrate having a single crystal semiconductor layer which is transferred from a single crystal semiconductor substrate to a supporting substrate, and an entire region of which is melted by laser light irradiation to cause re-single-crystallization is used. Accordingly, the single crystal semiconductor layer has reduced crystal defects, high crystallinity and high planarity.
Owner:SEMICON ENERGY LAB CO LTD

Wind turbine generator system

Provided is a wind turbine generator system that can cool a nacelle interior by ventilation irrespective of the outside air temperature in various installation environments. In a wind turbine generator system in which equipment of drive and electricity generation mechanisms that are coupled to a rotor head provided with wind turbine blades is disposed inside a nacelle, and in which, by driving a ventilation fan provided in the nacelle, outside air introduced from an air inlet provided in a front face of the nacelle is exhausted outside the nacelle from an air outlet that communicates with a fan outlet, to perform ventilation cooling of the interior, a side air inlet is additionally provided in a side face of the nacelle at a position where a negative pressure is generated by air flowing outside the nacelle.
Owner:MITSUBISHI HEAVY IND LTD
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