106 results about "Thermal reliability" patented technology

A cooling unit to cool the display apparatus including a heat generating unit to generate heat and a casing to accommodate the heat generating unit, the cooling unit includes a cooling fan to generate air flow; a duct which is coupled with the casing and forms a cooling path to connect the cooling fan and the heat generating unit; an inlet portion which is provided to one side of the casing to communicate with the duct; an inlet grill which is provided in the inlet portion to guide air to be inhaled in a direction inclined to a rear surface of the casing; an outlet portion which is provided to an other side of the casing to communicate with the duct, being spaced from the inlet portion; and an outlet grill which is provided in the outlet portion to guide air to be exhaled in a direction inclined to a rear surface of the casing, wherein the exhaled direction provided by the outlet grill is different from the air-inhaling direction provided by the inlet grill. With this configuration, the cooling path is effectively provided to enhance cooling efficiency and thermal reliability.

A backlight unit is provided with LEDs having a cooling structure. The backlight includes a heat pipe, which is disposed below a PCB having the LEDs thereon, and a heat sink connected with the heat pipe. Heat generated from the LEDs conducts via the PCB and the heat pipe and is then radiated by the heat sink. The cooling performance of the backlight unit is thus enhanced and the temperature increase in the light emission region is thus suppressed, so that thermal reliability of the LEDs is enhanced and light efficiency is increased to increase the brightness and to decrease the power consumption.

The present invention discloses a thermosetting resin composition including: a bi-functional or multi-functional epoxy resin, a SMA uses as a curing agent, an allyl phenol such as diallyl bisphenol A used as a co-curing agent and a toughening agent a low-bromine or high-bromine BPA epoxy resin or tetrabromobispheno A (TBBPA or TBBA) uses as a flame retardant agent, and an appropriate solvent. After the resin composition of the invention is cured, the resin composition has lower dielectric property and better thermal reliability and tenacity. A copper clad laminate made of an enhanced material such as glass fiber has lower dielectric constant (Dk) and loss tangent (Df), high Tg, high thermal decomposition temperature (Td), better tenacity and PCB manufacturability, and thus very suitable to be used as a copper clad laminate and a prepreg for manufacturing PCBs or applied as a molding resin material for contraction, automobile and air navigation.

The present invention discloses a thermosetting resin composition comprising: a bifunctional or multifunctional epoxy resin, a styrene-maleic anhydride (SMA) copolymer with a styrene / maleic anhydride molar ratio of 5-12:1 as a curing agent, a BPA epoxy resin with a low or high bromine content or tetrabromobisphenol A as a flame retardant agent, an accelerator and a solvent. The cured resin composition of the invention has a very low dielectric property, improved thermal reliability and better toughness. A copper clad laminate made of the resin composition and a reinforced material such as glass fiber cloth has a very low dielectric constant and dissipation factor, high Td, better toughness and PCB manufacturability, and thus very suitable to be used as a copper clad laminate and a prepreg for manufacturing PCBs and also applied to the common use of epoxy resins, such as molding resins, and composite materials for construction, automobiles and aviation.

Surface mount packages having pre-applied underfill thereon and methods of fabricating and using such packages are provided. Supplying customers with packages having pre-applied underfill enhances the thermal and mechanical reliability of surface mount packages and also, mitigates the customers' needs for additional cost, tooling, man-power, and process operations relating to the application and curing of underfill material.

A phosphazene compound, which can effectively enhance flame retardancy without deteriorating mechanical properties of a resin molded product, and is also less likely to deteriorate thermal reliability and dielectric properties, is represented by the formula (1) shown below. n represents an integer of 3 to 15.wherein A represents a group selected from the group consisting of an alkoxy group, an aryloxy group and a group having a cyanato group, and at least one is a group having a cyanato group, and an example of A is a cyanatophenyl-substituted phenyloxy group represented by the formula (4) shown below, and Y in the formula (4) represents O, S, SO2, CH2, CHCH3, C(CH3)2, C(CF3)2, C(CH3)CH2CH3 or CO.

The invention discloses a thermoset resin composition, comprising the following ingredients of: bifunctional groups or polyfunctional group epoxy resin, phenylethylene-maleic anhydride copolymer (SMA) as a curing agent, diallyl bisphenol A-like allylphenol as a co-curing agent and a toughening agent, low-bromine or high-bromine BPA-type epoxy resin or tetrabromobisphenol A (TBBPA or TBBA) as a fire retardant, a proper accelerator and a solvent. The inventive resin composition has, after being cured, relatively low dielectric property and superior thermal reliability and toughness, includes, in contrast to a cooper clad laminate manufactured by reinforcing materials such as glass fiber cloth, relatively low dielectric constant (called Dk for short) and electric loss tangent (called Df for short), high Tg, high thermal cracking temperature (called Td for short), excellent toughness and favorable PCB processibility, is quite suitable for manufacturing the cooper clad laminate for PCB and prepreg, and can also applied to general uses of the epoxy resin, such as molding plastics and the like, and to composite materials for construction, automobile and aviation.

An organic EL film is provided, which can convert triplet excitation energy into emission light using a polymer material. Also, an organic EL element is provided, which has high light-emitting efficiency and higher mechanical and thermal reliability than that in the conventional organic EL element by using the organic EL film. The present invention is characterized in that a polymer material with a heavy atom introduced on a chain or a polymer material doped with molecules containing a heavy atom is used for the organic EL element to introduce the heavy atom effect. In both the materials, the types of heavy atoms include a halogen element (particularly bromine or iodine), a metallic element, and the like. A rare gas element can also be used.

The invention provides a consumption and junction temperature simulation temperature for a power module. The consumption and junction temperature simulation system comprises a user interface unit and a background processing unit, wherein the user interface unit is used for receiving electric parameters and heat parameters of the power module, a model of the power module selected by a user, and a control algorithm used by the power module; the background processing unit is used for calculating consumption and junction temperature of the power module according to the electric parameters and the heat parameters of the power module, the model of the power module and the control algorithm used by the power module, and used for displaying the consumption and the junction temperature of the power module through the user interface unit. By adopting the consumption and junction temperature simulation system of the power module, calculation on the consumption and the junction temperature of the power module can be conveniently and rapidly achieved, precise results of the consumption and the junction temperature can be acquired, and convenience can be brought for engineers to simulate the thermal reliability situation of a system in circuit design.

A method attaches a semiconductor chip to a substrate, applies a thermal interface material to a top of the semiconductor chip, and positions a lid over the semiconductor chip typically attached to the substrate with an adhesive. The method applies a force near the distal ends of the lid or substrate to cause a center portion of the lid or substrate to bow away from the semiconductor chip and increases the central thickness of the thermal interface material prior to curing. While the center portion of the lid or substrate is bowed away from the semiconductor chip, the thermal interface material method increases the temperature of the assembly, thus curing the thermal interface material and lid adhesive. After the thermal interface material has and adhesive have cured, the method removes the force from near the distal ends of the lid or substrate to cause the center portion of the lid to return to a position closer to the semiconductor chip, creating a residual compressive stress in the thermal interface material thus improving thermal performance and thermal reliability.

Embodiments of the invention are generally related to packaging of integrated circuit devices, and more specifically to the placement of thermal paste for cooling an integrated circuit device during operation. A barrier element may be placed along at least one side of an integrated circuit chip. The barrier element may contain thermal paste pumped out during expansion and contraction of the package components to areas near the chip. The barrier element may also form a reservoir to replenish thermal paste that is lost during thermal pumping of the paste.

The invention discloses a method for measuring thermal reliability of GaN-based devices. The method includes: measuring magnitudes of drain voltage and drain current of multiple tested GaN-based devices under different gate voltages, and calculating to obtain direct-current steady-state power of the multiple tested GaN-based devices; using a microscopic thermal infrared imager to measure peak junction temperature of the multiple tested GaN-based devices, and calculating to obtain peak thermal resistance of the multiple tested GaN-based devices according to the peak junction temperature; obtaining the relation between the peak junction temperature of the multiple tested GaN-based devices and the direct-current steady-state power and the relation between the peak thermal resistance and the direct-current steady-state power by means of mathematic fitting; and analyzing microscopic thermal infrared images of the multiple tested GaN-based devices according to the obtained elation between the peak junction temperature and the direct-current steady-state power and the relation between the peak thermal resistance and the direct-current steady-state power to realize measurement of thermal reliability of the GaN-based devices. The method realizes effective evaluation on thermal reliability of the GaN-based HEMT (high electron mobility transistor) devices and has important guidance significances to structural optimization and process improvement of the devices.

A magnetic device includes a first pole having a first pole tip. A conductor, which is adjacent to an edge of the first pole tip, carries current to generate a second field that augments a first field generated by the first pole. The width of the conductor is in the range of about one to about five times the width of the trailing edge of the first pole tip.

The present invention provides a liquid crystal display element which can represent required VHR long-term thermal reliability, a liquid crystal alignment film which can represent required VHR long-term thermal reliability in the liquid crystal display element, and a liquid crystal alignment agent which can form the liquid crystal alignment film. The liquid crystal alignment film is formed by the liquid crystal alignment agent which comprises polyamide acids or derivative, which takes ethylenediaminetetraacetic Dianhydride and aromatic diamine with side chain. Furthermore the liquid crystal alignment film is used for the liquid crystal display element.

The invention relates to a high-voltage power-fast-recovery diode and a method for manufacturing the same, which belong to the technical field of semiconductor devices. The forward voltage drop of the prior high-voltage power-fast-recovery diode shows a negative temperature characteristic, thus the thermal reliability is poor. The main junction depth of the high-voltage power-fast-recovery diode is between 1 and 3 microns, and the doping density is between 1E16 and 1E18 cm. A junction terminal is formed by compounding a phosphonium-doped polycrystalline silicon layer field plate and an aluminum electrode field plate, wherein an aluminum electrode is conducted with a phosphonium-doped polycrystalline silicon layer, the aluminum electrode field plate is a multistage field plate or a stepless gradually-changing field plate, and a dielectric layer is positioned between a silicon high-resistance layer and the phosphonium-doped polycrystalline silicon layer and the aluminum electrode field plate. The technological parameters for the manufacturing method to prepare a main junction comprise the following: the temperature is between 1,050 and 1,150 DEG C, the junction pushing time is between 60 and 300 minutes, and the injection dosage is controlled to be between 1*10 and 5*10 cm. The dielectric layer is manufactured on the silicon high-resistance layer provided with the main junction, and the main junction is exposed; a part close to the main junction on the dielectric layer is manufactured with the phosphonium-doped polycrystalline silicon layer field plate at the position close to the main junction; and finally the aluminum electrode field plate is manufactured, and the aluminum electrode field plate is conducted with the main junction and the phosphonium-doped polycrystalline silicon layer field plate and covers part of the dielectric layer.

A micro-magnetic switch includes a permanent magnet and a supporting device having contacts coupled thereto and an embedded coil. The supporting device can be positioned proximate to the magnet. The switch also includes a cantilever coupled at a central point to the supporting device. The cantilever has a conducting material coupled proximate an end and on a side of the cantilever facing the supporting device and having a soft magnetic material coupled thereto. During thermal cycling the cantilever can freely expand based on being coupled at a central point to the supporting device, which substantially reduces coefficient of thermal expansion differences between the cantilever and the supporting device.

A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.

The invention provides a method for improving thermal conduction capability of a printed board of a surface-mounted device, and aims at providing an instructive and operable method for overcoming the defects that thermal conduction printed boards in the prior art are high in working temperature, poor in thermal reliability and the like due to poor thermal conduction capability, long thermal conduction route and large thermal conduction resistance. The technical scheme includes that the method includes: determining a layout of plated-through holes and thermal conductive copper pins according to ranges of power consumption parameters of a high-thermal-flux-density surface-mounted device; establishing a replicable and extendable thermal conducting route according to assembling relations among the surface-mounted device with a metal welding surface at the bottom, the printed board and a metal box; on reverse sides of thermal conductive through holes on the printed board and the surface-mounted device, sealing thermal conductive through holes with high temperature resistant adhesive tape; and respectively pressing the thermal conductive copper pins into correspondingly thermal conductive through holes and welding. By the method for improving the thermal conduction capability of the printed board of the surface-mounted device, the defect that the thermal conduction router of the high-thermal-flux-density surface-mounted device in low air pressure or vacuum is low in reliability is solved.

The invention discloses an electric vehicle battery heat dissipation and temperature control system and method based on liquid-gas phase change heat storage. The system comprises: a phase change evaporative cooling circulation system, a heating system and a control system. The phase change evaporative cooling circulation system includes a liquid reservoir, an adsorption phase change evaporative cooling device, a communicating pipe, a gas supply pipeline, a one-way valve, a steam drum, a condensing pipeline, an electromagnetic valve, an electric throttle valve, a condenser, a reflux pipeline, and a cooling fan. The heating system includes an adsorption phase change evaporative cooling device and a heater. The control system includes: a controller, a temperature sensor, a heat flux density sensor and a pressure sensor. The system and method provided by the invention have the beneficial effects that: through real-time monitoring of the temperature of the adsorption phase change evaporative cooling device, the heat flux density and the steam drum pressure by the control system, the working temperature and temperature difference of the power battery are effectively controlled, and the thermal reliability and working life of the power battery are improved.

The invention provides a heat dissipation circuit board and a method for fabricating the same. In an embodiment, the heat dissipation circuit board comprises a substrate and a heat dissipation body, wherein the substrate is provided with a first metal layer and a second metal layer, the first metal layer is formed on an upper surface of the substrate, the second metal layer is formed on a lower surface of the substrate, the first metal layer forms a conductive pattern layer, the heat dissipation body is arranged in the substrate and penetrates through the substrate, the heat dissipation body comprises a metal body, a first heat conduction insulation layer, a third metal layer, a second heat conduction insulation layer and a fourth metal layer, the first heat conduction insulation layer isformed on the upper surface of the metal body, the third metal layer is formed on the first heat conduction insulation layer, the second heat conduction insulation layer is formed on a lower surface of the metal body, the fourth metal layer is formed on the second heat conduction insulation layer, outer surfaces of the first metal layer and the third metal layer are flush with each other, and outer surfaces of the second metal layer and the fourth metal layer are flush with each other. The heat dissipation circuit board has favorable voltage resistance and heat dissipation performance, and islow in cost and excellent in thermal reliability.

The invention discloses a method for detecting effective heat dissipation of an encapsulation structure of a semiconductor light-emitting diode (LED). The invention provides a new method for acquiring good or bad effective heat dissipation of the encapsulation structure of the semiconductor LED based on the junction temperature and time dependency relationship of the semiconductor LED of a spectrum method. A dynamic curve of temperature and time is acquired by an optical measurement method, and the curve is fitted by indexes to acquire an equivalent heat dissipation coefficient representing the effective heat dissipation of the encapsulation structure. The method can simply and conveniently determine the effective heat dissipation of the encapsulation structure of the semiconductor LED, and has significance for seeking an optimal encapsulation material and an optimal encapsulation structure, improving the thermal reliability of the LED and saving the cost.

The invention belongs to the related technical field of semiconductor manufacturing, and specifically discloses an all-inorganic white light LED packaging structure and a preparation method thereof. The structure comprises a heat dissipation substrate, an LED chip and a fluorescent glass sheet, wherein the heat dissipation substrate includes a base and a support body, and a cavity is formed between the base and the support body; the LED chip is placed in the cavity and fixed on the base of the heat dissipation substrate; the fluorescent glass sheet is placed above the heat dissipation substrate, a fluorescent glass layer directly faces the LED chip, the periphery of the fluorescent glass fluorescent glass layer is a metal layer, a welding flux layer is processed on the metal layer, and theairtight welding between the fluorescent glass sheet and the support body of the heat dissipation substrate is realized through melting the welding flux layer. The all-inorganic white light LED packaging structure is enabled to have good thermal resistance and thermal reliability through preparing the fluorescent glass layer; and meanwhile, the aging and failure of an organic bonding material canbe avoided through the airtight welding between the fluorescent glass sheet and the heat dissipation substrate, and thus the reliability of white light LEDs is significantly improved.

A thermal reliability evaluating method for a GaN-based HEMT device is disclosed. The transfer characteristic curve, the grid leakage current characteristic curve and the thermal resistance values of the GaN-based HEMT device under different high-low temperature thermal shock frequency are acquired, and the changing relation of the transconductance of the GaN-based HEMT device to be tested with increasing of thermal shock frequency can be obtained according to the transfer characteristic curve under different thermal shock frequency. The changing relation of the grid leakage current under a certain grid reverse voltage of the GaN-based HEMT device to be tested with increasing of thermal shock frequency can be obtained according to the grid leakage current characteristic curve under different thermal shock frequency. The changing relation of the thermal resistance values of the GaN-based HEMT device to be tested with increasing of thermal shock frequency can be obtained according to the thermal resistance values of the GaN-based HEMT device to be tested under different thermal shock frequency. In this way, the thermal characteristic changing relation of the GaN-based HEMT device to be tested can be obtained. The design and process problems can be discovered, and the thermal reliability of the device can be improved.

The invention provides a packaging technology of a solid electrolytic capacitor; the packaging technology is as follows: the solid electrolytic capacitor with a well connected lead wire frame is placed in a forming mold cavity, liquid resin is injected in the forming mold cavity, the liquid resin is cured and formed in the cavity by maintaining a certain period of time after the injection, thereby forming the packaging resin and completing the packaging. The technology adopts the liquid resin during the packaging process of the electrolytic capacitor, the pressure needed for the injection molding process is small, the electrolytic capacitor has no mechanical injury, the pass rate of leakage current of the capacitor and the over-lead-free soldering-resistant thermal reliability are improved, the operation is simple, and the raw materials are easy to obtain, thereby being suitable for the large-scale technical development and promotion and having remarkable economic benefit.

The invention belongs to the technical field of semiconductor manufacturing and discloses a direct white LED chip manufacturing method with high thermal stability. The method comprises steps that firstly, an LED epitaxial layer is prepared on a sapphire substrate through epitaxial growth, secondly, fluorescent glass paste is coated on a back side of the sapphire substrate, a fluorescent glass layer is obtained through low-temperature sintering, thirdly, electrodes and pads are made on the epitaxial layer, and lastly, through thinning and polishing the fluorescent glass layer and shredding, thedirect white LED chip is obtained; or firstly, the LED wafer and the fluorescent glass piece are prepared, secondly, the fluorescent glass piece is bonded to the sapphire substrate through the bonding process, and lastly, the wafer is cut to obtain the direct white LED chip. The method is advantaged in that the phosphor coating process in the process of white LED manufacturing is avoided, the thickness of the phosphor layer is uniform, production efficiency and color consistency of the white LED are improved, a problem of poor thermal reliability of the phosphor is solved, and the thermal stability of the white LED is improved.

A device with a solder joint made of a copper contact pad (210) of certain area (202) and an alloy layer (301) metallurgically attached to the copper pad across the pad area. The alloy layer contains copper / tin alloys, which include Cu6Sn5 intermetallic compound, and nickel / copper / tin alloys, which include (Ni,Cu)6Sn5 intermetallic compound. A solder element (308) including tin is metallurgically attached to the alloy layer across the pad area. No fraction of the original thin nickel layer is left after the reflow process. Copper / tin alloys help to improve the drop test performance, nickel / copper / tin alloys help to improve the life test performance.

Embodiments are provided herein for testing multichip module (MCM) thermal reliability. An embodiment method includes selecting a chip with higher thermal risk from a plurality of chips in the MCM, and measuring a plurality of predetermined temperature parameters associated with the selected chip. A thermal resistance is then calculated using the predetermined temperature parameters. The thermal resistance is used to determine a thermal performance of the MCM. The predetermined temperature parameters include a junction temperature of the selected chip and at least one of a case temperature above the selected chip, a board temperature below the selected chip, and an ambient air temperature.

The invention discloses a method for rapidly preparing a one-dimensional linear welding point of a Cu6Sn5 intermetallic compound at low temperature, and belongs to the field of material preparation and connection. The method is suitable for preparing the one-dimensional linear welding point of the Cu6Sn5 intermetallic compound. One-dimensional linear copper rods are adopted as a bonding pad; the bonding pad is fixed on a printed circuit board through double faced adhesive tape, a composite brazing filler metal is filled between the two copper rods; and welding are carried out by adopting a lead-free welding system, a one-dimensional linear solder joint is prepared; and grinding and polishing are carried out, so that the one-dimensional linear welding point of the Cu6Sn5 intermetallic compound which can be used for electrical, mechanical and thermal reliability research is obtained. The method can ensure that the rapid preparation of the one-dimensional linear welding point of the Cu6Sn5 intermetallic compound can be carried out under a low-cost and low-temperature condition, the problem of failure caused by anisotropy of Sn-based welding spots can be relieved; and meanwhile, the preparation cost of a traditional intermetallic compound welding spots can be greatly reduced.