Method for measuring thermal reliability of GaN-based devices

Abstract

The invention discloses a method for measuring thermal reliability of GaN-based devices. The method includes: measuring magnitudes of drain voltage and drain current of multiple tested GaN-based devices under different gate voltages, and calculating to obtain direct-current steady-state power of the multiple tested GaN-based devices; using a microscopic thermal infrared imager to measure peak junction temperature of the multiple tested GaN-based devices, and calculating to obtain peak thermal resistance of the multiple tested GaN-based devices according to the peak junction temperature; obtaining the relation between the peak junction temperature of the multiple tested GaN-based devices and the direct-current steady-state power and the relation between the peak thermal resistance and the direct-current steady-state power by means of mathematic fitting; and analyzing microscopic thermal infrared images of the multiple tested GaN-based devices according to the obtained elation between the peak junction temperature and the direct-current steady-state power and the relation between the peak thermal resistance and the direct-current steady-state power to realize measurement of thermal reliability of the GaN-based devices. The method realizes effective evaluation on thermal reliability of the GaN-based HEMT (high electron mobility transistor) devices and has important guidance significances to structural optimization and process improvement of the devices.

Description

technical field [0001] The invention relates to the microscopic infrared measurement technology of GaN-based HEMT internal matching devices, in particular to a method for measuring the thermal reliability of GaN-based devices by using microscopic infrared. Background technique [0002] The infrared scanning method uses an infrared detector to detect the radiation energy density distribution of the device, so that the peak temperature of the device and its failure position can be determined more accurately, so as to calculate the peak thermal resistance. Steady-state micro-infrared test means that when the tested part reaches a stable state, it is measured with a micro-infrared test system, so as to obtain a high-resolution microscopic infrared distribution image of the tested part. Steady-state micro-infrared testing is an effective means for thermal analysis and thermal design of microwave devices, especially for measuring the peak temperature of devices, calculating device...

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Problems solved by technology

However, since the thermal resistance of the device is not a constant, it increases with the increase of the junction temperature.

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