Method for measuring thermal reliability of GaN-based devices

A reliability and device technology, which is applied in the field of measuring the thermal reliability of GaN-based devices by using micro-infrared, can solve the problem that the thermal resistance of the device is not a constant and becomes larger

Inactive Publication Date: 2013-03-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, since the thermal resistance of the device is not a cons

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  • Method for measuring thermal reliability of GaN-based devices
  • Method for measuring thermal reliability of GaN-based devices
  • Method for measuring thermal reliability of GaN-based devices

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[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0038] The method for measuring the thermal reliability of GaN-based devices provided by the present invention measures the micro-infrared thermal images of devices with different structures and materials through the micro-infrared measurement method, and determines the hot spot and thermoelectric distribution of GaN devices in steady state operation In the uneven position, the peak junction temperature of the device is given by the microscopic infrared thermal image, and then the peak thermal resistance is obtained, and the devices with serious hot spots and high thermal resistance are eliminated to realize the GaN-based device Measurement of Thermal Reliability.

[0039] Such as figure 1 as shown, figure 1 It is a flo...

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Abstract

The invention discloses a method for measuring thermal reliability of GaN-based devices. The method includes: measuring magnitudes of drain voltage and drain current of multiple tested GaN-based devices under different gate voltages, and calculating to obtain direct-current steady-state power of the multiple tested GaN-based devices; using a microscopic thermal infrared imager to measure peak junction temperature of the multiple tested GaN-based devices, and calculating to obtain peak thermal resistance of the multiple tested GaN-based devices according to the peak junction temperature; obtaining the relation between the peak junction temperature of the multiple tested GaN-based devices and the direct-current steady-state power and the relation between the peak thermal resistance and the direct-current steady-state power by means of mathematic fitting; and analyzing microscopic thermal infrared images of the multiple tested GaN-based devices according to the obtained elation between the peak junction temperature and the direct-current steady-state power and the relation between the peak thermal resistance and the direct-current steady-state power to realize measurement of thermal reliability of the GaN-based devices. The method realizes effective evaluation on thermal reliability of the GaN-based HEMT (high electron mobility transistor) devices and has important guidance significances to structural optimization and process improvement of the devices.

Description

technical field [0001] The invention relates to the microscopic infrared measurement technology of GaN-based HEMT internal matching devices, in particular to a method for measuring the thermal reliability of GaN-based devices by using microscopic infrared. Background technique [0002] The infrared scanning method uses an infrared detector to detect the radiation energy density distribution of the device, so that the peak temperature of the device and its failure position can be determined more accurately, so as to calculate the peak thermal resistance. Steady-state micro-infrared test means that when the tested part reaches a stable state, it is measured with a micro-infrared test system, so as to obtain a high-resolution microscopic infrared distribution image of the tested part. Steady-state micro-infrared testing is an effective means for thermal analysis and thermal design of microwave devices, especially for measuring the peak temperature of devices, calculating device...

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Application Information

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IPC IPC(8): G01R31/26G01J5/00
Inventor 赵妙刘新宇罗卫军郑英奎陈晓娟彭铭曾李艳奎
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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