8results about "Investigating crystals" patented technology

The application discloses a kind of pure natural royal jelly freeze-dried powder detection methods, it is related to quality detection technical field, the method includes the following steps: collecting the multi-dimensional original data of royal jelly freeze-dried powder, data is handled to generate data matrix, from data matrix extraction key feature index set, to index set is analyzed and evaluated to generate authenticity score, generate digital detection report and quality spectrum, based on detection result is continuously optimized.The application, by fusing near-infrared spectrum, microscopic image, physicochemical activity and block chain traceability and other multi-source heterogeneous data, intelligent evaluation is carried out using knowledge graph and lightweight multi-modal network, realizes the multi-dimensional, high-precision analysis of the pure nature, naturalness and adulteration of royal jelly freeze-dried powder.

The present application provides a urine processing method and a urine testing system. The method comprises processing urine to obtain urinary sediment and supernatant, performing crystallization processing on the supernatant and making analysis to obtain supernatant-related parameters, and making comprehensive analysis through combination of the supernatant-related parameters with urinary sediment-related parameters and urine dry chemistry-related parameters. The system comprises a urine processing module configured to process urine to obtain urinary sediment and supernatant, and a supernatant analysis module configured to perform crystallization processing on the supernatant and make analysis to obtain supernatant-related parameters, and to make comprehensive analysis through combination of the supernatant-related parameters with the urinary sediment-related parameters and the urine dry chemistry-related parameters.

An optical technique for voltage contrast imaging of the active electronic properties of semiconductors, including semiconductor surfaces, periodic structures, and electrically active defects, is disclosed. A pump laser beam is used to produce a modulated photovoltage in a semiconductor sample and a second probe laser beam is used to detect synchronous changes in the reflectance of the sample, resulting in a non-contact voltage contrast imaging capability. Exemplary optical configurations enabling high-throughput voltage contrast inspection of electrically active defects are discussed.

An optical inspection device includes a light source module, a container structure, a first polarizer, a first electrode, a second polarizer, a second electrode and an image inspection module. The container structure can accommodate a liquid crystal material. The image inspection module is disposed adjacent to the container structure. The first polarizer and the first electrode are disposed between the light source module and the container structure. The second polarizer and the second electrode are disposed between the container structure and the image inspection module. Thereby, when the light-transmitting substrate is disposed within a liquid crystal material of the container structure, the light source module can generate light beams projected onto the light-transmitting substrate, and the image inspection module is configured to inspect the light beams that pass through the light-transmitting substrate or are reflected by the light-transmitting substrate.

There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below 3≤HW≤100 0.1≤DA≤5 250≤CWL≤1600 where the center wavelength CWL and the half width HW are expressed in units of nm and the divergence angle DA is expressed in units of mrad.

A method for inspecting a gallium nitride based semiconductor film includes preparing a layered structure including a substrate and a crystal orientation region and a crystalline region disposed on the substrate, forming a gallium nitride based semiconductor film on each of the crystal orientation region and the crystalline region, and evaluating a crystallinity of each of the gallium nitride based semiconductor films formed on the crystal orientation region and the crystalline region.

This determination comprises: - for each of a plurality of illumination positions (110n), non-collimated illumination of the surface (102), and acquisition, at one and the same acquisition point (114) for all of the illumination positions (110n), of an image called a raw image; - for each illumination position (110n) and for each pixel (Pm) of the raw images, determination of a possible orientation (θn,m, φn,m) of crystalline facets, considering a propagation of light from the illumination position (110n) under consideration to the acquisition position (114), with specular reflection from the crystalline facets; - based on the raw images and the possible orientations (θn,m, φn,m) associated with their pixels (Pm), construction of a reflectance profile (PR); - determination of a real orientation (θr, φr) of the facets based on the reflectance profile (PR).

A method of evaluating a silicon single-crystal ingot, the method including cutting out three or more plural silicon wafers from the ingot to be evaluated; mirror polishing the plural silicon wafers to yield silicon mirror-surface wafers; processing the plural silicon mirror polished wafers into silicon epitaxial wafers through formation of an epitaxial layer on the mirror polished surfaces; acquiring light point defect maps of the epitaxial layer surfaces of the plural silicon epitaxial wafers with a laser surface inspection device; and creating an overlay map. In a case where a light point defect group in which three or more light point defects are linearly distributed is not confirmed in the overlay map, a region, from which the plural silicon wafers have been cut out, in the silicon single-crystal ingot to be evaluated, is estimated not to be a region in which a twin has occurred.