15results about "Investigating crystals" patented technology

The invention discloses a non-invasive prediction method for acne risk of puberty women and a kit, and belongs to the technical field of biological detection. According to the present invention, the non-invasive advantage of the saliva sample is adopted, and the cycle specificity of saliva crystallization and the pathological correlation of the sex hormone ratio are combined to achieve the early accurate early warning of the acne risk, such that the problems of strong invasion and difficult promotion in the teenager group of the traditional serum detection are solved, and the characteristics of convenient operation, low cost and repeatable monitoring are provided; and a new technical means is provided for prevention and early intervention of acne of puberty women.

The application provides an optical crystal AB surface detection device and a detection method in the field of optical crystal detection. The position and the orientation of the hexahedral coated glass in the blue film wafer disc are quickly photographed, positioned and determined through a CCD camera. The hexahedral coated glass which needs to be turned over is exchanged and adsorbed by a vertically cooperating pickup assembly and a moving pickup assembly so that the coated surface B faces upward. A turning mechanism is not needed, the turning operation process is simplified, the rapid detection, pickup, turning and transfer of the crystal AB surface are realized, and the detection efficiency is improved. The disclosed detection method of the optical crystal AB surface replaces manual judgment and turning and transfer by using a microscope and a clamp, improves the detection speed and accuracy, and realizes rapid identification and turning and transfer.

This invention relates to a method for inspecting and controlling the production quality of integral Ti60 titanium alloy bladed disks, belonging to the technical field of manufacturing key materials and components for aero-engines. The method includes processing multiple batches of billets through die forging, solution heat treatment, and aging heat treatment to form integral Ti60 titanium alloy bladed disk forgings; selecting one forging from each batch and dissecting it along its radial axis; cutting microstructure samples of different sizes from at least the blades, rims, spokes, and hub; pre-treating each microstructure sample to prepare the surface to be inspected; and using optical microscopes of different magnifications to perform microstructure testing on each inspection surface and analyze whether the parameter characteristics of β-grains and α-grains are qualified and meet preset conditions. This invention improves the efficiency of Ti60 titanium alloy integral bladed disk production quality.

The application discloses a kind of pure natural royal jelly freeze-dried powder detection methods, it is related to quality detection technical field, the method includes the following steps: collecting the multi-dimensional original data of royal jelly freeze-dried powder, data is handled to generate data matrix, from data matrix extraction key feature index set, to index set is analyzed and evaluated to generate authenticity score, generate digital detection report and quality spectrum, based on detection result is continuously optimized.The application, by fusing near-infrared spectrum, microscopic image, physicochemical activity and block chain traceability and other multi-source heterogeneous data, intelligent evaluation is carried out using knowledge graph and lightweight multi-modal network, realizes the multi-dimensional, high-precision analysis of the pure nature, naturalness and adulteration of royal jelly freeze-dried powder.

This invention discloses a simplified method for detecting the low-magnification grain size of aluminum and aluminum alloy sheets and strips with equiaxed grains. First, standard samples with grain sizes from level one to eight are tested according to GB / T 3246.2-2012. These standard samples are then prepared into dumbbell-shaped tensile test specimens according to GB / T 228.1-2021, and each specimen is subjected to tensile testing. The resulting low-magnification grain size level is labeled after each fracture, serving as the standard sample. Next, aluminum and aluminum alloy sheets and strips with equiaxed grains are prepared into dumbbell-shaped tensile test specimens according to GB / T 228.1-2021. These specimens are then subjected to tensile testing to obtain the fractured specimen. The surface roughness of the fractured section is compared with that of the standard specimen. This comparison determines the low-magnification grain size level of the tested sample. This invention determines the grain size of the tested sample by comparing the surface roughness of the tested sample and the standard sample. It is simple to operate, safe to use, energy-saving, reduces the need for post-treatment with strong acids and alkalis, and is low-cost.

The invention discloses a carbonatite ore-containing type lead-zinc deposit prospecting prediction method based on pyrite, and relates to the technical field of resource exploration. The method specifically comprises the following steps: drawing a macroscopic feature map according to the pyrite occurrence of different parts of the lead-zinc ore body; pyrite samples of different occurrence states are collected to prepare laser denudation sheet samples, then structural characteristic analysis is conducted, a structural characteristic graph is obtained, in-situ element and isotope analysis is conducted on the samples, original data are obtained and processed to obtain the content of main trace elements, then Pearson correlation coefficients of the main elements and the trace elements are calculated, and the content of the trace elements is calculated. Screening to obtain trace elements significantly related to the major elements; carrying out isotope analysis on the obtained delta 34S value; and finally, realizing prospecting prediction of the carbonate ore-containing lead-zinc deposit by integrating the structural characteristics of the pyrite, the content of trace elements, the occurrence state and the variation trend of the delta 34S value along with the distance from the ore body. According to the invention, a theoretical basis and a technical method system for prospecting prediction of the carbonate ore-containing lead-zinc deposit based on pyrite are established.

A defect inspection apparatus according to the present embodiment includes: an irradiation optical system configured to irradiate a sample including a SiC substrate, a buffer layer formed on the SiC substrate, and a drift layer formed on the buffer layer with excitation light; a filter unit configured to control a wavelength band to transmit photoluminescence light generated from the sample; a detection optical system configured to detect the photoluminescence light transmitted through the filter unit; and an image processing unit configured to form an image from the detected photoluminescence light and to discriminate a defect captured in the formed image, and the image processing unit discriminates the defect based on whether a length of the defect is L1=(D1+D2) / tan θ or L2=D2 / tan θ.

The invention relates to a device (100, 200, 300) for detecting crystalline defects in an off-axis monocrystalline substrate (10), wherein the normal (2) to the surface of the substrate (10) is tilted with respect to the crystallographic growth axis (3) by a tilt angle (4), the tilt angle (4) being contained in a plane, called angle plane, perpendicular to the surface, the device (100) comprising: - at least one detector (14, 14', 14a, 14b, 14c), - at least one illumination light source (12) configured to illuminate the substrate (10) with an illuminating light beam (13), the at least one illumination light source (12) being arranged in at least one of a first position and a second position, - at least one excitation light source (19) configured to illuminate the substrate with an excitation light beam (20) configured to produce an emission of photoluminescence light by the substrate (10), - imaging means (16, 17) configured to image the substrate (10) according to a field of view on the at least one detector(14, 14', 14a, 14b, 14c), said at least one detector producing at least one image of the substrate (10), and - processing means (18) configured to detect crystalline defects using said at least one image of the substrate (10), wherein the at least one illumination light source (12) and the imaging means (16, 17) are arranged in a dark-field configuration, and wherein in the first position, the at least one illumination light source (12) is arranged such that the illuminating light beam (13) is parallel or quasi-parallel to the angle plane (4), and in the second position, the at least one illumination light source (12) is arranged such that the illuminating light beam (13) is parallel or quasi-parallel to a plane, called perpendicular plane, containing the normal (2) to the surface and being perpendicular to the angle plane. The invention also relates to a method for detecting crystalline defects in an off-axis monocrystalline substrate.

The present application provides a urine processing method and a urine testing system. The method comprises processing urine to obtain urinary sediment and supernatant, performing crystallization processing on the supernatant and making analysis to obtain supernatant-related parameters, and making comprehensive analysis through combination of the supernatant-related parameters with urinary sediment-related parameters and urine dry chemistry-related parameters. The system comprises a urine processing module configured to process urine to obtain urinary sediment and supernatant, and a supernatant analysis module configured to perform crystallization processing on the supernatant and make analysis to obtain supernatant-related parameters, and to make comprehensive analysis through combination of the supernatant-related parameters with the urinary sediment-related parameters and the urine dry chemistry-related parameters.

An optical technique for voltage contrast imaging of the active electronic properties of semiconductors, including semiconductor surfaces, periodic structures, and electrically active defects, is disclosed. A pump laser beam is used to produce a modulated photovoltage in a semiconductor sample and a second probe laser beam is used to detect synchronous changes in the reflectance of the sample, resulting in a non-contact voltage contrast imaging capability. Exemplary optical configurations enabling high-throughput voltage contrast inspection of electrically active defects are discussed.

An optical inspection device includes a light source module, a container structure, a first polarizer, a first electrode, a second polarizer, a second electrode and an image inspection module. The container structure can accommodate a liquid crystal material. The image inspection module is disposed adjacent to the container structure. The first polarizer and the first electrode are disposed between the light source module and the container structure. The second polarizer and the second electrode are disposed between the container structure and the image inspection module. Thereby, when the light-transmitting substrate is disposed within a liquid crystal material of the container structure, the light source module can generate light beams projected onto the light-transmitting substrate, and the image inspection module is configured to inspect the light beams that pass through the light-transmitting substrate or are reflected by the light-transmitting substrate.

There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below 3≤HW≤100 0.1≤DA≤5 250≤CWL≤1600 where the center wavelength CWL and the half width HW are expressed in units of nm and the divergence angle DA is expressed in units of mrad.

A method for inspecting a gallium nitride based semiconductor film includes preparing a layered structure including a substrate and a crystal orientation region and a crystalline region disposed on the substrate, forming a gallium nitride based semiconductor film on each of the crystal orientation region and the crystalline region, and evaluating a crystallinity of each of the gallium nitride based semiconductor films formed on the crystal orientation region and the crystalline region.

This determination comprises: - for each of a plurality of illumination positions (110n), non-collimated illumination of the surface (102), and acquisition, at one and the same acquisition point (114) for all of the illumination positions (110n), of an image called a raw image; - for each illumination position (110n) and for each pixel (Pm) of the raw images, determination of a possible orientation (θn,m, φn,m) of crystalline facets, considering a propagation of light from the illumination position (110n) under consideration to the acquisition position (114), with specular reflection from the crystalline facets; - based on the raw images and the possible orientations (θn,m, φn,m) associated with their pixels (Pm), construction of a reflectance profile (PR); - determination of a real orientation (θr, φr) of the facets based on the reflectance profile (PR).

A method of evaluating a silicon single-crystal ingot, the method including cutting out three or more plural silicon wafers from the ingot to be evaluated; mirror polishing the plural silicon wafers to yield silicon mirror-surface wafers; processing the plural silicon mirror polished wafers into silicon epitaxial wafers through formation of an epitaxial layer on the mirror polished surfaces; acquiring light point defect maps of the epitaxial layer surfaces of the plural silicon epitaxial wafers with a laser surface inspection device; and creating an overlay map. In a case where a light point defect group in which three or more light point defects are linearly distributed is not confirmed in the overlay map, a region, from which the plural silicon wafers have been cut out, in the silicon single-crystal ingot to be evaluated, is estimated not to be a region in which a twin has occurred.