27results about "Investigating semiconductor impurities" patented technology

Disclosed are a method of forming an optical proximity correction (OPC) model and / or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an average image of a plurality of images taken using one or more scanning electron microscopes, and a graphic data system (GDS) image, which is obtained by imaging a designed layout, aligning the SEM image and the GDS image, performing an image filtering process on the SEM image, extracting a contour from the SEM image, and verifying the contour. The verifying of the contour may be performed using a genetic algorithm. Variables in the genetic algorithm may include first parameters related to the image alignment process, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.

The application discloses a kind of detection semiconductor light-emitting chip's polarized microscopy system and method, system includes chip excitation module, incident illumination modulation module, microscopic adjustment module, exit imaging module and control and image processing module.The application is continuously polarized by control module to incident illumination modulation module Modulation, modulated incident light is acted on light-emitting chip exit end face by microscopic system module, simultaneously using control module to adjust exit imaging module and carry out real-time image collection, obtain the polarized parameter image of exit end face by image processing module;Close incident illumination module, after using chip excitation module to excite light-emitting chip, adjust three-dimensional platform and exit imaging module by control module, real-time image collection, finally obtain the polarized parameter diagram of near-field light spot by image processing module.The application has very strong characterization ability and high sensitivity to the end face structure and near-field light spot of semiconductor light-emitting chip.

To execute an inspection recipe, the inspection system may receive a reference second harmonic generation (SHG) image of the reference structure, where the reference structure has a multi-layer structure with one or more inversion-symmetric materials therein, based on scanning the reference structure with an illumination beam and collecting SHG light in response to the illumination beam. The system may further receive a test SHG image of the test structure, where the test structure and the reference structure have a common design, based on scanning the test structure with the illumination beam and collecting SHG light in response to the illumination beam. The system may further identify defects in the test structure by comparing the test and reference SHG images.

The application discloses a cleaning method for removing a suction pen mark on a surface of a silicon carbide substrate and the silicon carbide substrate, and belongs to the technical field of silicon carbide detection. The cleaning method comprises the following steps: (1) using a mixed solution of ammonia and hydrogen peroxide to clean the surface of the substrate, so as to pre-oxidize the surface of the substrate; (2) using ozone water to clean the pre-oxidized substrate, so as to obtain a substrate containing an oxidation layer; and (3) using an acidic cleaning solution with a pH value of 2.0-3.5 to clean the substrate containing the oxidation layer, and then performing water washing and blowing dry, so as to obtain a cleaned silicon carbide substrate. The method can change the Zeta potential of the oxidation layer on the surface of the substrate, so that the surface potential of the substrate is not lower than 0 mV, thereby reducing the adsorption of positively charged particles on the suction pen, achieving the technical effect of completely removing the suction pen mark, and improving the quality of the silicon carbide substrate.

A method for determining the epitaxy suitability of Czochralski growth conditions for producing silicon substrates includes evaluating substrates sliced ​​from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafers with infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters can be compared to determine suitable growth conditions for producing substrates for epitaxy and / or post-epi thermal processing.

Second harmonic generation (SHG) can be used to interrogate surfaces such as the surface of a layered semiconductor structure on a semiconductor wafer. In some cases, SHG is used to evaluate an interfacial region such as between a metal and an oxide. Multiple parameters (such as input polarization, output polarization, and the azimuthal angle of the incident beam) can affect the SHG signal. Therefore, these parameters vary for different types of patterns on the wafer. SHG metrology on multiple test structures can also assist in characterizing the sample.

The application discloses a microscopic imaging method, which comprises the following steps: selecting a beam combination imaging device with at least two objectives, aiming the objectives at a to-be-measured object, and installing a camera at a camera interface of the beam combination imaging device; adjusting all the objectives so that there is a height difference in the depth of field intervals of all the objectives; and obtaining images of target regions corresponding to all the objectives by the camera. The application further discloses a microscopic imaging device and a storage medium. By using the beam combination imaging device with the single-camera multi-objective structure, the depth of field intervals of the camera can be increased by focusing different objectives on different height planes.

The present invention relates to an apparatus and method for enabling the inspection of a substantially transparent substrate. The apparatus comprises a housing and a light source, and the method enables the effective analysis of a substantially transparent substrate placed within the housing.

The invention relates to a device and a method capable of inspecting a substantially transparent substrate. The apparatus comprises a housing and a light source, and the method enables analysis of a substantially transparent substrate located within the housing in an efficient manner.

Provided is a method for blending of agricultural product utilizing hyperspectral imaging. At least one region along a sample of agricultural product is scanned using at least one light source of different wavelengths. Hyperspectral images are generated from the at least one region. A spectral fingerprint for the sample of agricultural product is formed from the hyperspectral images. A plurality of samples of agricultural product is blended based on the spectral fingerprints of the samples according to parameters determined by executing a blending algorithm.

The invention relates to a device (100) for measuring via photoluminescence, which comprises: - a sample holder (110); - a detector (130) configured to collect a photoluminescence signal; and - a processing unit (140) configured to process a signal collected by the detector (130); the device being characterized in that it further comprises a carrier (160) placed facing a back side (112) of the sample holder (110), which side is opposite the front side (110), and on a face of which, called the main face (161), rests at least one radiation source (150) intended to emit light radiation that illuminates the back side (112) and that is capable of being collected, through the sample holder (110), which is transparent to said light radiation, by the detector (130).

The invention discloses a wafer surface trace particulate matter recognition method and system based on multispectral imaging, and relates to the technical field of wafer defect detection and measurement in the semiconductor manufacturing process. Selective attenuation is carried out on diffraction peak components corresponding to the periodic structure, spatial domain characterization is reconstructed through inverse transformation, and the masking effect of a fixed mode background on particle detectability is reduced from the source; meanwhile, the frequency domain background suppression model is subjected to supervision or self-supervision training by utilizing a defect-free reference wafer frequency spectrum and a layout simulation diffraction frequency spectrum, so that the model learns a stable structure and an allowable fluctuation range of a background component, and the robustness and consistency under the conditions of graph drift and micro deformation are improved.

An inspection system may perform an inspection recipe by receiving reference SHG images of a reference structure based on a scan of the reference structure with an illumination beam and collecting second harmonic generation (SHG) light in response to the illumination beam, where the reference structure includes a multilayer structure including one or more inversion-symmetric materials. The system may further receive test SHG images of a test structure based on a scan of the test structure by illuminating the test structure with the illumination beam and collecting the SHG light in response to the illumination beam, where the test structure and the reference structure have a common design. The system may further identify defects in the test structure by comparing the test and reference SHG images.

The invention relates to a device and a method for enabling inspection of a substantially transparent substrate. The device comprises thereto a housing and a light source, and method enables analyzing of a substantially transparent substrate positioned within the housing in an effective manner.

Techniques for inspecting a substrate can include scanning the substrate across a plurality of scan positions using an interrogation beam having a width substantially equal to or greater than a diameter of at least one surface feature on a surface of the substrate to generate scanning results. A set of raw centroid calculation results can be generated based on the scanning results. An error property can be determined and removed from the raw centroid calculation results to generated refined centroid calculation results. A characteristic of the surface feature can be determined based on the centroid calculation results.

A method is disclosed for determining the suitability of silicon substrates for epitaxy and / or slip resistance during epitaxy and post-epitaxy thermal treatments. The method evaluates different substrates of epitaxial wafers by imaging the wafers with infrared depolarization. Infrared depolarization parameters are generated for each epitaxial wafer. By comparing the parameters, it is possible to determine which substrates are suitable for epitaxy and / or post-epitaxy thermal treatments.

Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and / or post-epi heat treatments.

A photoluminescence measurement device may include: a sample holder; a detector configured to collect a photoluminescence signal; a processing unit configured to process a signal collected by the detector; and a support disposed facing a rear face of the sample holder, opposite to the front face, and on one face, called the main face, of which rests at least one radiation source for emitting light radiation illuminating the rear face and likely to be collected, by transparency of the sample holder with respect to the light radiation, by the detector.

Provided is a method for blending of agricultural product utilizing hyperspectral imaging. At least one region along a sample of agricultural product is scanned using at least one light source of different wavelengths. Hyperspectral images are generated from the at least one region. A spectral fingerprint for the sample of agricultural product is formed from the hyperspectral images. A plurality of samples of agricultural product is blended based on the spectral fingerprints of the samples according to parameters determined by executing a blending algorithm.

The present invention relates to a method for inspecting a wafer surface, a wafer surface inspection apparatus, and a method for manufacturing an electronic component. The method for inspecting the surface of a wafer includes the following steps: irradiating the surface of the wafer with a laser beam having three or more different wavelengths; detecting reflected light from the surface of the wafer when the surface of the wafer is irradiated with the laser beam; and determining whether there is a foreign object on the surface of the wafer based on the reflectance of the surface of the wafer with respect to the laser beam having three or more different wavelengths, wherein the step of determining whether there is a foreign object includes a step of determining whether the foreign object is a metal or a non-metal.

Evaluation method for a SiC epitaxial wafer, comprising: a first observation step of producing a SiC epitaxial wafer with a high-concentration epitaxial layer with an impurity concentration of 1 × 10 18 cm -3 or more, irradiating a surface of the high-concentration epitaxial layer with an impurity concentration of 1 × 10 18 cm -3 or more with excitation light and observing a surface irradiated with the excitation light through a bandpass filter with a wavelength band of 430 nm or less, a second observation step of observing the surface irradiated with the excitation light through a bandpass filter with a wavelength band of more than 430 nm; and a first determination step of comparing an observation result of the first observation step with an evaluation result of the second observation step.

The invention discloses an intelligent detection system for the emergence rate of seed floating seedling raising, and the system comprises an image collection module which is used for collecting a high-quality image of a seedling raising plate region, and guaranteeing the definition and accuracy of data; the image preprocessing module is used for carrying out primary processing on the acquired images to enable the acquired images to meet subsequent analysis requirements; the seedling raising tray area detection module is used for identifying a boundary area of the seedling raising tray through an image processing algorithm; according to the seed floating seedling emergence rate intelligent detection system, intelligent detection of the seed emergence condition in a seedling tray area is realized through various technical modules such as image acquisition, preprocessing, area detection, target identification and coincidence detection in combination with a powerful Halcon image processing and deep learning algorithm. The emergence rate is obtained by judging the overlapping condition of the seedlings and the hole grids and the quality of the seedlings. Through automatic processing, the detection efficiency is improved, the problems that the emergence rate is difficult to count and time and labor are wasted in the existing seed industry are solved, and the benefits of farmers are better guaranteed.

There is provided a system and method of examining a specimen. The method comprises obtaining an actual measurement in response to scanning the specimen using a set of scanning parameters with predefined values; obtaining a simulated measurement based on design data; comparing the actual measurement with the simulated measurement to identify a deviation with respect to a predefined tolerance; identifying at least one structural property as root cause of the deviation by: obtaining one or more additional actual measurements in response to scanning the specimen using one or more varying values of at least one scanning parameter; and providing the actual measurement and the additional actual measurements to a simulation model representative of simulated measurement distribution in a multi-dimensional property space characterized by the structural properties of the plurality of layers and the at least one scanning parameter, thereby identifying the at least one structural property.

A method for removing foreign matter from an agricultural product stream of a manufacturing process. The method includes conveying a product stream past an inspection station; scanning a region of the agricultural product stream as it passes the inspection station using at least one light source of a single or different wavelengths; generating hyperspectral images from the scanned region; determining a spectral fingerprint for the agricultural product stream from the hyperspectral images; comparing the spectral fingerprint obtained in step (c) to a spectral fingerprint database containing a plurality of fingerprints using a computer processor to determine whether foreign matter is present and, if present, generating a signal in response thereto; and removing a portion of the conveyed product stream in response to the signal. A system for detecting foreign matter within an agricultural product stream is also provided.

The embodiment of the invention provides a mixed crystal detection system and method for a polished wafer, and relates to the field of polished wafers. The polarized light transmission device is utilized to irradiate linearly polarized light onto a target polished section, so that the target polished section reflects elliptically polarized light to the image acquisition device, the image acquisition device acquires an image of the target polished section to obtain a target image, and the processor performs stray crystal detection operation on the target image to obtain candidate stray crystals. And target mixed crystals are screened out from the candidate mixed crystals according to the attribute information of the candidate linear mixed crystals, and a mixed crystal detection result of the target polished wafer is determined based on the parameter information of the target mixed crystals. In addition, through primary screening and secondary screening of mixed crystal detection, the accuracy of the detected mixed crystals can be ensured. In addition, the whole process is automatically realized, and the problems of low detection accuracy and relatively low efficiency existing in manual detection can be avoided.

A method for removing foreign matter from an agricultural product stream of a manufacturing process. The method includes conveying a product stream past an inspection station; scanning a region of the agricultural product stream as it passes the inspection station using at least one light source of a single or different wavelengths; generating hyperspectral images from the scanned region; determining a spectral fingerprint for the agricultural product stream from the hyperspectral images; comparing the spectral fingerprint obtained in step (c) to a spectral fingerprint database containing a plurality of fingerprints using a computer processor to determine whether foreign matter is present and, if present, generating a signal in response thereto; and removing a portion of the conveyed product stream in response to the signal. A system for detecting foreign matter within an agricultural product stream is also provided.

Techniques for inspecting a substrate can include scanning the substrate across a plurality of scan positions using an interrogation beam having a width substantially equal to or greater than a diameter of at least one surface feature on a surface of the substrate to generate scanning results. A set of raw centroid calculation results can be generated based on the scanning results. An error property can be determined and removed from the raw centroid calculation results to generated refined centroid calculation results. A characteristic of the surface feature can be determined based on the centroid calculation results.