The application discloses a cleaning method for removing a suction pen mark on a surface of a
silicon carbide substrate and the
silicon carbide substrate, and belongs to the technical field of
silicon carbide detection. The cleaning method comprises the following steps: (1) using a
mixed solution of
ammonia and
hydrogen peroxide to clean the surface of the substrate, so as to pre-oxidize the surface of the substrate; (2) using
ozone water to clean the pre-oxidized substrate, so as to obtain a substrate containing an oxidation layer; and (3) using an acidic cleaning solution with a pH value of 2.0-3.5 to clean the substrate containing the oxidation layer, and then performing
water washing and blowing dry, so as to obtain a cleaned
silicon carbide substrate. The method can change the
Zeta potential of the oxidation layer on the surface of the substrate, so that the surface potential of the substrate is not lower than 0 mV, thereby reducing the adsorption of positively charged particles on the suction pen, achieving the technical effect of completely removing the suction pen mark, and improving the quality of the
silicon carbide substrate.