Method, device and equipment for detecting crystal line growth state of silicon rod

A technology of growth state and detection method, which is applied in the direction of measuring devices, testing semiconductor impurities, image enhancement, etc., can solve the problem of low precision in the process of detecting crystal lines, fluctuations in the diameter of single crystal silicon rods, and difficulty in accurately determining the characteristic pixel values ​​​​of crystal lines and crystal line plane height X to achieve the effect of improving detection accuracy and detection efficiency and simple operation
CN112444516BActive Publication Date: 2022-03-11LONGI GREEN ENERGY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
LONGI GREEN ENERGY TECH CO LTD
Publication Date
2022-03-11

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Abstract

The present invention provides a method, device and equipment for detecting the crystal line growth state of a silicon rod, which relate to the technical field of single crystal silicon, including: obtaining a sample image of a silicon rod during the growth process of a silicon rod; A detection area is set on the image, and the detection area overlaps with the crystal line growth line of the silicon rod; a gray value curve of the detection area is generated; according to the gray value curve of the detection area, the crystal line of the silicon rod on the crystal line growth line is determined growth status. In the present invention, by collecting the sample image of the silicon rod in the growth process in real time, and setting a detection area on the sample image, according to the gray value curve of the detection area, the growth state of the crystal wire of the silicon rod can be determined, thereby Judging whether the silicon rod is a single crystal silicon rod, this method reduces the influence of the fluctuation of the diameter of the silicon rod and the unobvious characteristics of the crystal wire on the detection process of the crystal wire, thereby improving the detection accuracy and efficiency of the crystal wire, and the operation Simple.
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Description

technical field

[0001] The invention relates to the technical field of single crystal silicon, in particular to a method, device and equipment for detecting the crystal line growth state of a silicon rod. Background technique

[0002] In the process of preparing single crystal silicon by the Czochralski method, there are four crystal lines distributed at equal intervals on the surface of the single crystal silicon rod along the axial direction. If dislocation or thermal stress occurs in the single crystal silicon rod, it will cause crystal When switching from single crystal growth to polycrystalline growth, the crystal line on the surface of the single crystal silicon rod is broken. Therefore, whether there are 4 continuous crystal lines on the silicon rod can be used to judge whether the crystal rod is single crystal silicon or polycrystalline silicon.

[0003] The existing method for automatically detecting crystal lines is to take real-time pictures of growing silicon rod...

Claims

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