70 results about "Czochralski method" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention relates to a silicon single crystal drawing method capable of reducing the resistivity range of a whole silicon single crystal rod, which belongs to the technical field of wafer processing and comprises the following operation steps of: 1, completely melting a solid silicon material and a doping agent into liquid in a crucible a; and 2, slowly lowering the crucible position in the crucible b to realize that a part of liquid at the bottom of the crucible is slowly solidified into a solid from the bottommost part. And 3, after the crucible in the crucible c is slowly lowered and stopped, seeding, shouldering and equal-diameter operation are carried out. And 4, carrying out an equal-diameter growth stage in the d crucible. And 5, continuously growing the single crystal rod in the e crucible. And 6, finishing silicon single crystal drawing in the crucible f through an ending process. An initial state of'high-concentration melt + low-concentration solid 'is constructed before crystal pulling, and real-time and dynamic dilution compensation is performed on the concentration of a dopant of a main melt, so that the inherent defect of resistivity axial non-uniformity caused by a segregation effect in a traditional Czochralski method is effectively overcome.

The invention provides a czochralski method monocrystalline silicon preparation method and a matched growth system. According to the Czochralski method monocrystalline silicon preparation method, a stabilization treatment step is executed after material melting is finished, the stabilization treatment step comprises a magnetic field closing stage and a magnetic field opening stage, and the lifting movement tracks of a quartz crucible in the two stages are the same and the rotation directions are opposite. According to the technical scheme, two-stage stabilization treatment of closing and opening of the magnetic field is set after material melting, and preferably, the lifting track, the total displacement and the rotation rate of the quartz crucible in the two stages are consistent in rate and movement and are opposite in direction, so that impact and scouring on the quartz crucible are reduced, high-temperature softening deformation is relieved, and chemical reaction of molten silicon and the crucible is inhibited; and the crucible loss is delayed.

The invention relates to the technical field of monocrystalline silicon production. The invention provides a shouldering control method for single crystal silicon production based on a czochralski method in order to solve the problems that in the prior art, detection hysteresis exists, and a shouldering opening cannot be pre-judged in advance. According to the method, a prediction model is trained based on static process data and dynamic process data, and then the opening moment and the opening size of the shouldering are predicted by using the trained prediction model. Static process data and dynamic process data are analyzed through a prediction model, an advanced prediction mechanism is achieved, predicted values of the shouldering splitting time and the opening size are given before shouldering opening, the process can be adjusted in time, the unstable condition in the shouldering process is solved, and the detection hysteresis quality is improved. The production stability and the process matching are ensured; manual intervention can be reduced, the technology is intervened in advance according to the prediction result, and frequent adjustment of technological parameters by technologists can be reduced.

The invention relates to a method for pulling a single crystal from a melt consisting of silicon and a dopant according to the Czochralski method, comprising the following steps in a given sequence: a) performing a time-dependent computer simulation of a predetermined crystal pulling process having a predetermined dopant concentration (C) in the melt, with the aim of obtaining a temperature gradient and a dopant gradient for each time increment t, wherein the two gradients are determined at the interface between the crystal and the melt in the normal direction of the melt interface, b) determining a maximum dopant concentration (Cmax) in the melt, and c) pulling up a single crystal having a dopant concentration less than the determined maximum dopant concentration (Cmax), characterized in that a parameter (CS) is calculated for each time increment t, which is determined by formula, wherein the parameter fCS is determined from the product of the average concentration (C) of the dopant in the melt, the density of the silicon melt, the Avgamde constant, the molar mass of the silicon and the slope of the liquidus, and then generating an average value of the values obtained for the parameter (CS) wherein only those values having the (CS) value less than zero are included, and determining the maximum dopant concentration (Cmax) by adapting the above defined dopant concentration (C) until the magnitude equals zero.

The invention relates to a single crystal furnace and a control method thereof. The single crystal furnace comprises a furnace body; the crucible is arranged in the furnace body; the water cooling screen is positioned above the crucible; the guide cylinder is arranged in the furnace body and surrounds the peripheral side of the water cooling screen; and the electromagnetic heating piece is arranged on the peripheral side of the water cooling screen in a surrounding mode and located on the inner side of the flow guide cylinder, the electromagnetic heating piece is further located at the end, close to the crucible, of the water cooling screen, synchronously ascends and descends along with the water cooling screen and the flow guide cylinder, and the electromagnetic heating piece is used for heating a solid-liquid interface between the silicon liquid and the crystal bar. Therefore, the electromagnetic heating element can locally heat the silicon liquid, so that a supercooling area generated on the surface of the silicon liquid due to too high pulling speed in the growth process of the czochralski silicon single crystal is eliminated, the crystal twisting phenomenon is inhibited, the uniformity and high quality of crystal growth are ensured, the yield of the crystal can be ensured, and the uniformity of a thermal field is ensured.

A method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, the method including providing the member being located above the melt, when a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the melt in a crucible, the method including: forming a through-hole in the member; measuring distance between the member and the melt surface, and observing position of mirror image of the through-hole with fixed point observation apparatus, the mirror image being reflected on the melt surface; then measuring a moving distance of the mirror image, and calculating distance between the member and the melt surface from a measured value and the moving distance of the mirror image, during the pulling of the crystal. The distance between the member and the melt can be precisely measured by the method.

The application discloses a single crystal growth ending method and system based on convex solid-liquid interface control and belongs to the technical field of semiconductor material preparation. The method is applied to the ending stage of Czochralski method single crystal silicon growth, the heating power, the pulling speed, the crystal rotation state and the crystal lifting state are cooperatively controlled, the solid-liquid interface is adjusted from a concave surface to a plane and a convex shape towards the melt in four steps, and the rapid ending is completed under the stable convex interface; the matching system comprises a single crystal furnace body and a heating power and a pulling parameter control module, and further comprises a state monitoring and central control module, so that the accurate cooperation and automatic control of process parameters are realized. The application fundamentally eliminates the generation conditions of dislocation back extension and hidden cracks, reduces the occurrence rate, shortens the ending time, has strong process controllability, can be upgraded on the existing equipment, and has a good industrialization and popularization prospect.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The invention belongs to the technical field of gallium oxide semiconductor materials, and particularly relates to an n-type high-carrier-concentration beta-Ga2O3 single crystal material and a preparation method and application thereof. The invention provides an n-type high-carrier-concentration beta-Ga2O3 single-crystal material and a preparation method for the n-type high-carrier-concentration beta-Ga2O3 single-crystal material, aiming at the technical bottleneck that a high-carrier-concentration gallium oxide single-crystal material cannot be prepared by a Czochralski method. The preparation method comprises the following steps: (1) preparing a low-carrier-concentration beta-Ga2O3 single-crystal material by adopting a melt method; (2) calculating the theoretical doping concentration of germanium atoms in the beta-Ga2O3 single crystal material; the method comprises the following steps: carrying out neutron irradiation treatment on a beta-Ga2O3 single crystal material with low carrier concentration to obtain a germanium-doped beta-Ga2O3 single crystal material; and (3) carrying out activation treatment on the germanium-doped beta-Ga2O3 single crystal material, so as to obtain the n-type beta-Ga2O3 single crystal material with high carrier concentration. The problem of spiral growth in the process of preparing the high-electron-concentration gallium oxide single crystal through a pulling method is solved, the process is simple, the carrier concentration of the prepared beta-Ga2O3 single crystal material is adjustable in the range of 1016-5 * 1020 / cm < 3 >, and industrial large-scale production can be achieved.

The invention discloses a preparation method of a low-oxygen magnesium fluoride crystal, and belongs to the technical field of crystal preparation. After the raw materials are molten, the mixed gas activated by the catalytic net is introduced into the crystal furnace in an intermittent pulse mode, active fluorine species in the mixed gas and oxygen impurities on the surface of the melt can be subjected to fluorination reaction so as to reduce the content of the oxygen impurities, airflow in the intermittent pulse ventilation mode is matched with rotation of the crucible to disturb the melt, a reaction interface is updated, and the reaction efficiency is improved. And finally, the low-oxygen magnesium fluoride crystal is obtained through a pulling method.

A polishing method of a silicon wafer, which includes a step of performing a front-stage polishing process and a subsequent fine polishing process as a final polishing process, in the polishing method of the silicon wafer, the fine polishing process in the final polishing process includes: a fine slurry polishing process using a slurry having a density of 1 x 10 13 cm 3 above as the second polishing liquid; and a pre-polishing process performed before the fine slurry polishing process and using a slurry having a density of 1 x 10 10 cm 3 above as the second polishing liquid. A manufacturing method of a silicon wafer, which, after forming a notch portion in a peripheral portion of a single crystal silicon ingot grown by a Czochralski method, and then slicing to obtain a silicon wafer, performs a polishing treatment on the obtained silicon wafer by the above polishing method of a silicon wafer.

The utility model relates to the technical field of heater pick-and-place devices, in particular to a heater pick-and-place device for producing single crystals by a czochralski method, which comprises a supporting rod, a plurality of connecting plates are arranged on the outer side wall of the supporting rod through connecting structures, and the other ends of the connecting plates are connected with a heater body. The connecting structure is a connecting groove formed in the supporting rod, so that the heater can be taken and placed more conveniently and quickly, unmanned operation can be achieved, manual intervention is reduced, and the yield in the production process is increased.

The invention relates to the technical field of semiconductors, and provides an artificial intelligence assisted czochralski method crystal seeding process method. According to the method, seeding process parameters directly related to crystal growth are selected from seeding historical data, and part of seeding historical data are selected for calibration to obtain the deviation between the actual seeding temperature and the ideal seeding temperature so as to obtain the ideal seeding temperature under the corresponding seeding process parameters, so that an artificial intelligence supervised learning model is trained; the trained artificial intelligence supervised learning model is adopted, the ideal seeding temperature of the furnace is obtained through prediction of the artificial intelligence supervised learning model according to the current seeding process parameters, a process engineer is assisted to set the proper seeding temperature, and convenience is provided for production; deviation is automatically corrected along with continuous production, and monocrystalline silicon crystals are stably, efficiently and continuously produced; according to the method, the defects of dependence on artificial experience, low efficiency, non-standardized operation and the like in manual seeding temperature determination can be overcome, and the method can be suitable for modernized large-scale production.

This invention provides a method for growing iron-gallium single crystals using the Czochralski method based on seed rod cooling, belonging to the field of functional crystal materials technology. The invention obtains a uniform melt by melting an FeGa alloy, then establishes a stable temperature gradient within the melt; introduces a seed crystal and controls the solid-liquid interface through seed rod cooling; controls the pulling speed and rotation speed for crystal growth, and obtains iron-gallium single crystals after cooling. This invention introduces seed rod cooling technology to actively control the solid-liquid interface, achieving stable control of the interface morphology; simultaneously, by combining the synergistic optimization of temperature gradient and pulling speed, a growth process suitable for the FeGa system is established, suppressing compositional segregation and improving crystal uniformity from the growth stage. This solves the problems of unstable solid-liquid interface, severe compositional segregation, and difficulty in controlling crystal quality in existing technologies, thereby achieving stable preparation of large-size, high-quality FeGa single crystals.

The application discloses a growth method of a large-size gallium oxide crystal prepared by a cold crucible Czochralski method, and comprises the following steps: 1, placing a beta-Ga2O3 seed crystal in a growth device for preparing the large-size gallium oxide crystal by the cold crucible Czochralski method, and stacking Ga2O3 raw materials to form a raw material stack; 2, starting a heating power supply of an induction coil; 3, materializing; 4, seeding; 5, shoulder placing; and 6, equal-diameter growth. The application works in an oxygen-rich environment and does not use an iridium crucible.

A single-crystal silicon and a manufacturing method therefor, and a silicon wafer. The manufacturing method comprises: when a magnetic field is applied to a raw material melt and a single-crystal silicon is pulled by using the Czochralski method, growing the single-crystal silicon in a manner of controlling the magnetic field strength to be between 2000 Gauss and 3000 Gauss. In this way, the oxygen concentration of the grown single-crystal silicon is 5.6 ppma or more and 8.5 ppma or less, and the RRG in the crystal cross section orthogonal to the growth direction of the single-crystal silicon is 1% or less.

The application discloses a method for growing LSGM single crystal by a pulling method and belongs to the technical field of single crystal growth. The method provided by the application comprises the following steps: ingredients of La2O3, SrCO3, Ga2O3 and MgO are prepared according to a mass ratio of (60.5-62.0):(2.5-3.5):(36.2-38.2):(0.6-1.2), mixed, pressed, and then solid-phase sintered to obtain LSGM embryo material; then the growth of LSGM single crystal is carried out by a pulling method; and the atmosphere used in the growth process is a mixed atmosphere of oxygen, carbon dioxide and nitrogen, and the volume ratio of oxygen, carbon dioxide and nitrogen is (0.5-2):(65-75):(25-35). The application effectively overcomes the volatilization and decomposition problems of Ga2O3 in the process of growing LSGM single crystal by a pulling method, and can grow high-quality LSGM single crystal meeting the requirements of a substrate.

The application discloses a kind of high-efficiency low-attenuation antimony-doped N-type monocrystalline silicon rod and preparation method thereof, belongs to monocrystalline silicon rod manufacturing technical field, its preparation method is as follows: polycrystalline silicon material is layered in quartz crucible according to bottom layer, middle layer, top layer order layering charge, antimony source is uniformly mixed in middle layer silicon material;After vacuumizing to single crystal furnace, fill in argon as protective atmosphere, make polycrystalline silicon material and antimony source completely melt by subsection heating, and form stable melt;Seed crystal is added to melt, then after seeding, shoulder is released and enters constant diameter growth stage, and the pulling speed is dynamically adjusted and the crystal rotation speed is matched with the crucible rotation speed;After constant diameter growth to target length, start to finish, after in-situ annealing treatment, cool, and obtain.The application is based on Czochralski method by doping high-purity antimony source in system, and dynamically controls constant diameter growth process parameters, which can eliminate the light-induced attenuation hidden danger of N-type monocrystalline silicon, significantly improve the resistivity uniformity, and realize the balance of low dislocation density and high crystal yield.

The invention discloses a method for preparing silicon single crystals through diameter-variable and pulling-speed-variable seeding, and belongs to the technical field of preparation of semiconductor silicon materials through a czochralski method. According to the method, in a seeding stage, the diameter of a seed crystal is controlled to periodically change between the maximum diameter and the minimum diameter, and meanwhile, the pulling speed of the seed crystal is controlled to periodically change between the maximum pulling speed and the minimum pulling speed. Through the collaborative periodic change of the diameter and the pulling speed, the dynamic stress field and temperature field change is introduced into the crystal, the solid-liquid interface fixed morphology is changed, the steady-state path of dislocation extension is broken, and dislocation proliferation, steering and rapid extension to the crystal surface disappear are actively promoted, so that the dislocation discharge efficiency and the seeding success rate are remarkably improved. The method is particularly suitable for challenging conditions such as large thermal field temperature gradient or growth of special crystal orientation, hardware does not need to be changed, and implementation is easy.

Crucibles for growing single crystal silicon ingots by the Czochralski method and methods for preparing a single crystal silicon ingot. The crucibles are characterized by transmission modification of the crucible body. A lower section of the crucible body may be made of silica doped with silicon. An upper section may be made of silica without quartz dopant.

The application discloses a high-impedance near-zero temperature drift high-temperature piezoelectric crystal material and a growth method and application thereof, and belongs to the technical field of piezoelectric crystal growth. x Gd 1‑x Ca4O(BO3)3, x=0.1-0.3, and the high-impedance near-zero temperature drift high-temperature piezoelectric crystal material can be obtained by using a conventional Czochralski method to grow a large-size high-quality single crystal, and the growth process is simple and easy to process. The piezoelectric special-shaped element made of the crystal material has an effective longitudinal piezoelectric constant d 33 The effective shear piezoelectric constant d 26 The high-temperature 1000 DEG C resistivity can reach 10 6 Ω.cm; the piezoelectric constant change rate in the range from room temperature to 1000 DEG C is below 5%, and the crystal material has the near-zero temperature drift characteristic and high-temperature resistance.

To provide a silicon single crystal having a marking indicating the boundary of each single crystal block in the silicon single crystal grown by intermittently charging a sub-dopant into a melt, forming a plurality of single crystal blocks along the axial direction and controlling the kind and resistivity of each single crystal block when pulling up the silicon single crystal by a Czochralski method.SOLUTION: The single crystal wafer includes a plurality of single crystal blocks 1 having a first resistivity having a variation width within a standard range in a crystal axis direction and continuously formed in the crystal axis direction, and a high resistivity layer 2 having a second resistivity having a peak projecting higher than the standard range at a boundary of the plurality of single crystal blocks.SELECTED DRAWING: Figure 1

This invention relates to a scandium-terbium-gallium garnet magneto-optical crystal without radial stripes and its preparation method. The Tb3Sc crystal was grown using the Czochralski method. x Ga 5‑x O 12 The magneto-optical crystal (where x = 0.05–0.3) belongs to the cubic crystal system and has the space group Ia–3d. This method utilizes a small amount of Sc... 3+ Partial Ga doping 3+ This helps suppress the formation of spiral dislocation-related defects, enabling the growth of high-quality terbium gallium garnet magneto-optical crystals without radial stripes. Low-concentration Sc 3+ The doping strategy has shown excellent results in addressing the radial stripe defect in TGG crystals and improving their key performance characteristics, providing a practical new approach for the fabrication of core materials for magneto-optical devices. This crystal material is expected to find practical applications in magneto-optical devices such as magneto-optical isolators, magneto-optical circulators, and magneto-optical modulators.

The invention discloses a shouldering method for growing yttrium vanadate crystals by a pulling method, a pulling method growth process of large-size crystals and the yttrium vanadate crystals, the shouldering method deconstructs the growth process into four stages, and quantitative interval control is performed on key parameters of each stage. Necking process parameters are standardized and coordinated with gradual adjustment of the included angle theta, so that stress slow release and defect screening in the early growth stage are realized; furthermore, the seed crystal immersion depth h is dynamically and finely adjusted, so that closed-loop control on the solid-liquid interface form is formed, and the ideal micro-convex state is maintained. According to the process, the undoped yttrium vanadate single crystal with the diameter not smaller than 80mm can be stably prepared, the 1064nm wavelength absorption coefficient of the undoped yttrium vanadate single crystal is lower than 0.005 cm <-5 >, the optical uniformity of the undoped yttrium vanadate single crystal is superior to 10 <-5 >, no macroscopic defect exists in the undoped yttrium vanadate single crystal, and the problems that large-size crystals are prone to cracking, multiple in defect and poor in consistency in the growth process are effectively solved.

Crucibles for growing single crystal silicon ingots by the Czochralski method and methods for preparing a single crystal silicon ingot. The crucibles are characterized by transmission modification of the crucible body. A lower section of the crucible body may be made of silica doped with silicon. An upper section may be made of silica without quartz dopant.

This invention discloses a method for detecting the bulk resistivity uniformity of lightly phosphorus-doped monocrystalline silicon rods and wafers, belonging to the field of monocrystalline silicon rod technology. The method involves preparing the lightly phosphorus-doped monocrystalline silicon rods using the Czochralski method, uniformly doping them with light phosphorus via ion implantation. The detection method includes: axial bulk resistivity uniformity detection; slicing the lightly phosphorus-doped monocrystalline silicon rods; radial bulk resistivity uniformity detection; construction and uniformity determination of the three-dimensional bulk resistivity distribution; and data archiving and feedback. This invention solves the problem that existing technologies can only achieve single-dimensional detection and cannot comprehensively evaluate bulk resistivity uniformity. This invention can intuitively and comprehensively reflect the bulk resistivity distribution of lightly phosphorus-doped monocrystalline silicon rods and wafers, accurately locate areas with poor uniformity, avoid defect omissions caused by single-dimensional detection, and comprehensively evaluate bulk resistivity uniformity.

The application discloses a method for preparing ultra-high resistivity silicon substrate by a Czochralski method, and the process flow of the method is as follows: preparing a silicon single crystal by the Czochralski method, rolling and grinding the single crystal rod, multi-wire cutting, edge chamfering, double-side grinding, chemical etching, heat treatment and chemical mechanical polishing; wherein, in the process of preparing the silicon single crystal by the Czochralski method, a horizontal superconducting magnetic field is used in the single crystal growth process, the magnetic field strength is 1000-5000 Gauss, meanwhile, specific crystal rotation speed and crucible rotation speed are matched, the crystal rotation speed is 1-12 rpm, and the crucible rotation speed is 0.1-2 rpm; the heat treatment process is POLY+LTO thin film growth or high-temperature annealing. The method is suitable for preparing P-type silicon substrate with a diameter of 8 inches or above, a resistivity of 3000 ohm*cm or above and oxygen content of 5 ppma or below. The prepared single crystal has an oxygen content of less than 5 ppma, a resistivity of more than 3000 ohm*cm after annealing, an oxygen content uniformity of less than 10%, and a resistivity uniformity of less than 5%.

The invention relates to the technical field of monocrystalline silicon furnaces, and discloses a czochralski method monocrystalline silicon furnace thermal field automatic dismantling device which comprises a base table, two half furnace bodies are slidably connected to the upper portion of the base table, a complete furnace body can be formed when the two half furnace bodies are combined, a heat preservation layer and a heating layer are sequentially arranged in each half furnace body, and an operation shaft is arranged above the base table. A detachable crucible furnace is installed above the operation shaft, fastening assemblies capable of enhancing the stability of the two half furnace bodies when the two half furnace bodies are combined are arranged on the outer sides of the two half furnace bodies, a dragging assembly for lifting the crucible furnace upwards is arranged above the base table, and through the dragging assembly, after the half furnace bodies, the heat preservation layer and the heating layer are separated and fixed, the crucible furnace descends along the outer wall of the crucible furnace. When the crucible furnace is dismounted, lifting force is applied from the bottom of the crucible furnace, the crucible furnace is lifted upwards, dismounting treatment of the crucible furnace is achieved, automatic operation of dismounting of the crucible furnace is achieved, and damage to the crucible furnace and other parts in the dismounting process is reduced.