112 results about "Czochralski method" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention relates to a silicon single crystal drawing method capable of reducing the resistivity range of a whole silicon single crystal rod, which belongs to the technical field of wafer processing and comprises the following operation steps of: 1, completely melting a solid silicon material and a doping agent into liquid in a crucible a; and 2, slowly lowering the crucible position in the crucible b to realize that a part of liquid at the bottom of the crucible is slowly solidified into a solid from the bottommost part. And 3, after the crucible in the crucible c is slowly lowered and stopped, seeding, shouldering and equal-diameter operation are carried out. And 4, carrying out an equal-diameter growth stage in the d crucible. And 5, continuously growing the single crystal rod in the e crucible. And 6, finishing silicon single crystal drawing in the crucible f through an ending process. An initial state of'high-concentration melt + low-concentration solid 'is constructed before crystal pulling, and real-time and dynamic dilution compensation is performed on the concentration of a dopant of a main melt, so that the inherent defect of resistivity axial non-uniformity caused by a segregation effect in a traditional Czochralski method is effectively overcome.

The invention belongs to the technical field of scintillation materials, and particularly relates to a chromium ion doped near-infrared scintillation crystal and a preparation method and application thereof. The chromium ion-doped near-infrared scintillation crystal has a molecular formula of A3B2-xCrxC3O12, x is greater than or equal to 0.005 and less than or equal to 0.1, and after a chromium ion-doped ultraviolet-visible light inorganic scintillator is adopted, light is emitted at the wavelength of 650-950 nm and has good wavelength matching with a silicon photoelectric detector. Besides, single crystal growth is carried out by adopting a Czochralski method, the crystal growth process is optimized, the ion doping concentration is regulated and controlled, the scintillation performance of the chromium ion doped near-infrared scintillation crystal in the near-infrared band is improved, the requirement of the chromium ion doped near-infrared scintillation crystal in the radiation detection field is further met, and the problem that an existing scintillation crystal is low in transparency is solved.

The invention provides a czochralski method monocrystalline silicon preparation method and a matched growth system. According to the Czochralski method monocrystalline silicon preparation method, a stabilization treatment step is executed after material melting is finished, the stabilization treatment step comprises a magnetic field closing stage and a magnetic field opening stage, and the lifting movement tracks of a quartz crucible in the two stages are the same and the rotation directions are opposite. According to the technical scheme, two-stage stabilization treatment of closing and opening of the magnetic field is set after material melting, and preferably, the lifting track, the total displacement and the rotation rate of the quartz crucible in the two stages are consistent in rate and movement and are opposite in direction, so that impact and scouring on the quartz crucible are reduced, high-temperature softening deformation is relieved, and chemical reaction of molten silicon and the crucible is inhibited; and the crucible loss is delayed.

The invention relates to the technical field of monocrystalline silicon production. The invention provides a shouldering control method for single crystal silicon production based on a czochralski method in order to solve the problems that in the prior art, detection hysteresis exists, and a shouldering opening cannot be pre-judged in advance. According to the method, a prediction model is trained based on static process data and dynamic process data, and then the opening moment and the opening size of the shouldering are predicted by using the trained prediction model. Static process data and dynamic process data are analyzed through a prediction model, an advanced prediction mechanism is achieved, predicted values of the shouldering splitting time and the opening size are given before shouldering opening, the process can be adjusted in time, the unstable condition in the shouldering process is solved, and the detection hysteresis quality is improved. The production stability and the process matching are ensured; manual intervention can be reduced, the technology is intervened in advance according to the prediction result, and frequent adjustment of technological parameters by technologists can be reduced.

The invention belongs to the technical field of metal material processing, particularly relates to a preparation method of a metal single crystal seed crystal, and belongs to the technical field of single crystal material preparation and crystal orientation control. The method comprises the following steps: selecting an original seed crystal, heating and melting high-purity metal, carrying out single crystal growth by adopting a czochralski method, carrying out crystal orientation analysis and labeling, directionally cutting out the seed crystal and the like. According to the method, through multiple times of shouldering / necking and X diffraction analysis, natural preferred growth of crystals and clear calibration of later crystal orientation are achieved, crystal orientation control is facilitated, the prepared single crystal metal rod has the large size (the diameter is 3-4 inches, and the length is 300 mm), multiple seed crystals can be obtained through repeated cutting, and the material utilization rate can be increased; the grain boundary and dislocation density is reduced in the continuous crystal orientation selection process, so that the crystal integrity is excellent; seed crystals in various growth directions can be obtained through directional cutting, different process requirements can be met, and the process compatibility is good.

The invention relates to a method for pulling a single crystal from a melt consisting of silicon and a dopant according to the Czochralski method, comprising the following steps in a given sequence: a) performing a time-dependent computer simulation of a predetermined crystal pulling process having a predetermined dopant concentration (C) in the melt, with the aim of obtaining a temperature gradient and a dopant gradient for each time increment t, wherein the two gradients are determined at the interface between the crystal and the melt in the normal direction of the melt interface, b) determining a maximum dopant concentration (Cmax) in the melt, and c) pulling up a single crystal having a dopant concentration less than the determined maximum dopant concentration (Cmax), characterized in that a parameter (CS) is calculated for each time increment t, which is determined by formula, wherein the parameter fCS is determined from the product of the average concentration (C) of the dopant in the melt, the density of the silicon melt, the Avgamde constant, the molar mass of the silicon and the slope of the liquidus, and then generating an average value of the values obtained for the parameter (CS) wherein only those values having the (CS) value less than zero are included, and determining the maximum dopant concentration (Cmax) by adapting the above defined dopant concentration (C) until the magnitude equals zero.

The invention relates to a single crystal furnace and a control method thereof. The single crystal furnace comprises a furnace body; the crucible is arranged in the furnace body; the water cooling screen is positioned above the crucible; the guide cylinder is arranged in the furnace body and surrounds the peripheral side of the water cooling screen; and the electromagnetic heating piece is arranged on the peripheral side of the water cooling screen in a surrounding mode and located on the inner side of the flow guide cylinder, the electromagnetic heating piece is further located at the end, close to the crucible, of the water cooling screen, synchronously ascends and descends along with the water cooling screen and the flow guide cylinder, and the electromagnetic heating piece is used for heating a solid-liquid interface between the silicon liquid and the crystal bar. Therefore, the electromagnetic heating element can locally heat the silicon liquid, so that a supercooling area generated on the surface of the silicon liquid due to too high pulling speed in the growth process of the czochralski silicon single crystal is eliminated, the crystal twisting phenomenon is inhibited, the uniformity and high quality of crystal growth are ensured, the yield of the crystal can be ensured, and the uniformity of a thermal field is ensured.

A method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, the method including providing the member being located above the melt, when a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the melt in a crucible, the method including: forming a through-hole in the member; measuring distance between the member and the melt surface, and observing position of mirror image of the through-hole with fixed point observation apparatus, the mirror image being reflected on the melt surface; then measuring a moving distance of the mirror image, and calculating distance between the member and the melt surface from a measured value and the moving distance of the mirror image, during the pulling of the crystal. The distance between the member and the melt can be precisely measured by the method.

The application discloses a single crystal growth ending method and system based on convex solid-liquid interface control and belongs to the technical field of semiconductor material preparation. The method is applied to the ending stage of Czochralski method single crystal silicon growth, the heating power, the pulling speed, the crystal rotation state and the crystal lifting state are cooperatively controlled, the solid-liquid interface is adjusted from a concave surface to a plane and a convex shape towards the melt in four steps, and the rapid ending is completed under the stable convex interface; the matching system comprises a single crystal furnace body and a heating power and a pulling parameter control module, and further comprises a state monitoring and central control module, so that the accurate cooperation and automatic control of process parameters are realized. The application fundamentally eliminates the generation conditions of dislocation back extension and hidden cracks, reduces the occurrence rate, shortens the ending time, has strong process controllability, can be upgraded on the existing equipment, and has a good industrialization and popularization prospect.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The utility model relates to the technical field of crystal growth, in particular to a pulling method crystal growth diameter control device which comprises a pulling furnace, a crucible is arranged in the pulling furnace, a heating mechanism used for heating the crucible is further arranged in the pulling furnace, and a driving mechanism is fixedly installed at the top end of the pulling furnace. The output end of the driving mechanism is fixedly connected with a lifting rod, the front end of the lifting rod slidably penetrates through the top end of the lifting furnace to the interior of the lifting furnace and is provided with a chuck, and the front end of the lifting rod is detachably and fixedly provided with a seed crystal through the chuck; an annular mounting groove is formed in the position, close to the front end, of the periphery of the lifting rod, and a stabilizing mechanism is arranged between the periphery of the lifting rod and the inner wall of the lifting furnace through the annular mounting groove; when the lifting rod is lifted, the front end position of the lifting rod is peripherally limited by the stabilizing mechanism, so that the stability of the lifting rod is improved, and the control accuracy of the crystal growth diameter is favorably improved.

The invention belongs to the technical field of gallium oxide semiconductor materials, and particularly relates to an n-type high-carrier-concentration beta-Ga2O3 single crystal material and a preparation method and application thereof. The invention provides an n-type high-carrier-concentration beta-Ga2O3 single-crystal material and a preparation method for the n-type high-carrier-concentration beta-Ga2O3 single-crystal material, aiming at the technical bottleneck that a high-carrier-concentration gallium oxide single-crystal material cannot be prepared by a Czochralski method. The preparation method comprises the following steps: (1) preparing a low-carrier-concentration beta-Ga2O3 single-crystal material by adopting a melt method; (2) calculating the theoretical doping concentration of germanium atoms in the beta-Ga2O3 single crystal material; the method comprises the following steps: carrying out neutron irradiation treatment on a beta-Ga2O3 single crystal material with low carrier concentration to obtain a germanium-doped beta-Ga2O3 single crystal material; and (3) carrying out activation treatment on the germanium-doped beta-Ga2O3 single crystal material, so as to obtain the n-type beta-Ga2O3 single crystal material with high carrier concentration. The problem of spiral growth in the process of preparing the high-electron-concentration gallium oxide single crystal through a pulling method is solved, the process is simple, the carrier concentration of the prepared beta-Ga2O3 single crystal material is adjustable in the range of 1016-5 * 1020 / cm < 3 >, and industrial large-scale production can be achieved.

The invention discloses a preparation method of a low-oxygen magnesium fluoride crystal, and belongs to the technical field of crystal preparation. After the raw materials are molten, the mixed gas activated by the catalytic net is introduced into the crystal furnace in an intermittent pulse mode, active fluorine species in the mixed gas and oxygen impurities on the surface of the melt can be subjected to fluorination reaction so as to reduce the content of the oxygen impurities, airflow in the intermittent pulse ventilation mode is matched with rotation of the crucible to disturb the melt, a reaction interface is updated, and the reaction efficiency is improved. And finally, the low-oxygen magnesium fluoride crystal is obtained through a pulling method.

A polishing method of a silicon wafer, which includes a step of performing a front-stage polishing process and a subsequent fine polishing process as a final polishing process, in the polishing method of the silicon wafer, the fine polishing process in the final polishing process includes: a fine slurry polishing process using a slurry having a density of 1 x 10 13 cm 3 above as the second polishing liquid; and a pre-polishing process performed before the fine slurry polishing process and using a slurry having a density of 1 x 10 10 cm 3 above as the second polishing liquid. A manufacturing method of a silicon wafer, which, after forming a notch portion in a peripheral portion of a single crystal silicon ingot grown by a Czochralski method, and then slicing to obtain a silicon wafer, performs a polishing treatment on the obtained silicon wafer by the above polishing method of a silicon wafer.

The utility model relates to the technical field of heater pick-and-place devices, in particular to a heater pick-and-place device for producing single crystals by a czochralski method, which comprises a supporting rod, a plurality of connecting plates are arranged on the outer side wall of the supporting rod through connecting structures, and the other ends of the connecting plates are connected with a heater body. The connecting structure is a connecting groove formed in the supporting rod, so that the heater can be taken and placed more conveniently and quickly, unmanned operation can be achieved, manual intervention is reduced, and the yield in the production process is increased.

The present invention belongs to the field of semiconductor wafer manufacturing technology, and specifically relates to a method for growing gallium oxide single crystals using a cold crucible Czochralski method. The method involves first applying high-frequency heating to the gallium oxide raw material in a crucible, then maintaining the temperature for a certain period of time, and then increasing the heating frequency to completely melt the gallium oxide. The pressure of the cooling water is then adjusted to form a solid gallium oxide layer on the inner wall of the crucible, isolating the gallium oxide at the center from contact with the inner wall of the crucible. Crystal pulling is then performed, and the heating frequency is gradually reduced during crystal pulling. This technical solution, through the design of the crucible structure and the adjustment of the heating frequency of the high-frequency heating device, achieves the formation of a solid gallium oxide layer between the gallium oxide melt and the inner surface of the crucible during the crystal pulling process. This solid gallium oxide layer can completely isolate the gallium oxide inside from contact with the crucible material, preventing contamination of the produced gallium oxide crystals.

The invention relates to the technical field of semiconductors, and provides an artificial intelligence assisted czochralski method crystal seeding process method. According to the method, seeding process parameters directly related to crystal growth are selected from seeding historical data, and part of seeding historical data are selected for calibration to obtain the deviation between the actual seeding temperature and the ideal seeding temperature so as to obtain the ideal seeding temperature under the corresponding seeding process parameters, so that an artificial intelligence supervised learning model is trained; the trained artificial intelligence supervised learning model is adopted, the ideal seeding temperature of the furnace is obtained through prediction of the artificial intelligence supervised learning model according to the current seeding process parameters, a process engineer is assisted to set the proper seeding temperature, and convenience is provided for production; deviation is automatically corrected along with continuous production, and monocrystalline silicon crystals are stably, efficiently and continuously produced; according to the method, the defects of dependence on artificial experience, low efficiency, non-standardized operation and the like in manual seeding temperature determination can be overcome, and the method can be suitable for modernized large-scale production.

A crystal-growth controlling method and device, and a crystal growing apparatus, used for, in the process of growing a crystal by a pulling method, forming the crystal of the shape required by the cell side. The method includes: in a process of growing a crystal by the pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level; comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser.

A method for producing a phosphorus-doped silicon single crystal, which comprises pulling the phosphorus-doped silicon single crystal from a phosphorus-doped silicon melt by the magnetic field applying Czochralski (MCZ) method, wherein the phosphorus is doped in such a way that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×10 16 atoms / cm 3 or more, and a horizontal magnetic field with a central magnetic field strength of 0.2 Tesla (2,000 Gauss) or more is applied to the silicon melt, wherein the measures for controlling the uptake of oxygen into the phosphorus-doped silicon single crystal include controlling the rotation of the crystal axis, the single crystal growth rate, the flow rate of an inert gas, the furnace pressure, or the design of the heating chamber structure so that, during the production of the phosphorus-doped silicon single crystal, the oxygen concentration is adjusted to a value of 1.6×10 18 atoms / cm 3 (ASTM'79) or above over the entire length of the entire body of the single crystal.

This invention provides a method for growing iron-gallium single crystals using the Czochralski method based on seed rod cooling, belonging to the field of functional crystal materials technology. The invention obtains a uniform melt by melting an FeGa alloy, then establishes a stable temperature gradient within the melt; introduces a seed crystal and controls the solid-liquid interface through seed rod cooling; controls the pulling speed and rotation speed for crystal growth, and obtains iron-gallium single crystals after cooling. This invention introduces seed rod cooling technology to actively control the solid-liquid interface, achieving stable control of the interface morphology; simultaneously, by combining the synergistic optimization of temperature gradient and pulling speed, a growth process suitable for the FeGa system is established, suppressing compositional segregation and improving crystal uniformity from the growth stage. This solves the problems of unstable solid-liquid interface, severe compositional segregation, and difficulty in controlling crystal quality in existing technologies, thereby achieving stable preparation of large-size, high-quality FeGa single crystals.

The invention discloses a device and method for detecting the bonding strength of a wafer, the device comprises a bonding wafer, a base, a fixed seat, a sliding seat, a fixed column, a sleeve and a detection spring, and the detection method comprises the following steps: S1, calibration; s2, mounting a bonding wafer; s3, detecting; and S4, calculating. The wafer bonding strength measuring device has the beneficial effects that the bonding strength of the wafer body is measured by adopting a czochralski method, in the measuring process, a pulling force is applied to the sliding seat by pulling the sleeve, so that the pulling force is transmitted to the bonding position of the wafer body, the pulling force can be intuitively reflected through the detection spring, and in the measuring process, the bonding strength of the wafer body is measured. By reading the reading of the detection spring when the bonded wafer is broken, the tensile force applied to the bonded wafer when the bonded wafer is broken can be measured, and compared with a traditional measurement mode, the device and the detection method are more visual and convenient to use.

The invention concerns monocrystalline dislocation-free Ge, n-type doped, and having a resistivity of less than 10 mOhm·cm, characterized in that phosphorus is the single dopant. Such crystals can be obtained by using the Czochralski pulling technique with GeP as dopant.

The invention belongs to the technical field of crystals, and particularly relates to a method for preparing calcium fluoride crystals with high laser damage resistance through a Czochralski method. The crystal is a calcium fluoride crystal doped with strontium ions and trace lithium ions, and the maximum laser damage threshold of the crystal can reach 4.7 J / cm < 2 >. The preparation of the crystal is characterized in that gradient temperature control is carried out on the basis of a traditional Czochralski method, temperature distribution of a melt-crystal interface and a surrounding area is regulated and controlled, and the key problems of solid-liquid interface stability, stress control, component uniformity and the like in the crystal growth process are solved.

The application discloses a growth method of a large-size gallium oxide crystal prepared by a cold crucible Czochralski method, and comprises the following steps: 1, placing a beta-Ga2O3 seed crystal in a growth device for preparing the large-size gallium oxide crystal by the cold crucible Czochralski method, and stacking Ga2O3 raw materials to form a raw material stack; 2, starting a heating power supply of an induction coil; 3, materializing; 4, seeding; 5, shoulder placing; and 6, equal-diameter growth. The application works in an oxygen-rich environment and does not use an iridium crucible.

Silicon single crystals having an oxygen concentration of greater than 2×1017 at / cm3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10−5 l / cm3, a carbon concentration of less than 5.5×1014 at / cm3, an iron concentration of less than 5.0×109 at / cm3, a COP concentration of fewer than 1000 defects / cm3, a LPIT concentration of fewer than 1 defect / cm2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.

A single-crystal silicon and a manufacturing method therefor, and a silicon wafer. The manufacturing method comprises: when a magnetic field is applied to a raw material melt and a single-crystal silicon is pulled by using the Czochralski method, growing the single-crystal silicon in a manner of controlling the magnetic field strength to be between 2000 Gauss and 3000 Gauss. In this way, the oxygen concentration of the grown single-crystal silicon is 5.6 ppma or more and 8.5 ppma or less, and the RRG in the crystal cross section orthogonal to the growth direction of the single-crystal silicon is 1% or less.

To provide a system for producing a silicon ingot by the horizontal magnetic field Czochralski method.SOLUTION: A system for producing a silicon ingot includes: a natural sand crucible containing a silicon melt in which a cristobalite layer having a thickness between 0.25 mm and 1.25 mm is formed on an inner wall of the crucible; magnetic poles for generating a horizontal magnetic field; and a controller programed to produce a silicon ingot according to the following steps: rotating the natural sand crucible containing a silicon melt at two to five revolutions per minute; applying a horizontal magnetic field to the crucible using the magnetic poles; contacting the silicon melt with a seed crystal; and withdrawing the seed crystal from the silicon melt while rotating the natural sand crucible at two to five revolutions per minute to form a silicon ingot.SELECTED DRAWING: Figure 4