156 results about "Czochralski method" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention relates to the technical field of photovoltaic crystal growth, in particular to a method for improving the axial resistance uniformity of an antimony-doped silicon single crystal and the antimony-doped silicon single crystal. The method provided by the invention comprises the following steps: growing the antimony-doped silicon single crystal by adopting a czochralski method, and at an equal-diameter stage, controlling the furnace pressure to be 4-13torr; in the czochralski method, after leading and releasing are failed or growth of a single antimony-doped silicon single crystal is completed, supplemental doping of an antimony element is carried out according to the volatilization amount of the antimony element. In the method disclosed by the invention, the tail resistance and the head resistance of the prepared antimony-doped silicon single crystal are kept highly consistent by controlling the furnace pressure at the equal-diameter stage, regulating and controlling the volatilization rate of the antimony element, combining the segregation phenomenon of the antimony element in silicon and determining the supplementary doping time of the antimony element.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The utility model relates to a bottom heater for improving the material melting efficiency of a single crystal furnace, which belongs to the technical field of a thermal field for producing single crystal silicon by a czochralski method and comprises a heating body and two foot plates which are symmetrically arranged left and right, are respectively positioned on two opposite sides of the heating body and are connected with the heating body; the heating body comprises a first heating body and a second heating body which are symmetrically arranged in the vertical direction; the middle of the foot plate extends and protrudes towards the center of the bottom heater to form an arc-shaped plate, and electrode holes are formed in the arc-shaped plate. The first heating body comprises a first heating unit, a second heating unit and a third heating unit, the first heating unit and the third heating unit are symmetrically arranged on the left side and the right side of the second heating unit, and the outer side of the first heating unit and the outer side of the third heating unit are each of a step-shaped structure. The bottom heater is simple in structure, high in heating power and uniform in heating, the occurrence rate of arcing and sparking of the bottom heater and the heat preservation cylinder caused by external factors is effectively reduced, the service life of the bottom heater is prolonged, the service life of a thermal field is prolonged, and the stability of the thermal field is improved.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention relates to a silicon single crystal drawing method capable of reducing the resistivity range of a whole silicon single crystal rod, which belongs to the technical field of wafer processing and comprises the following operation steps of: 1, completely melting a solid silicon material and a doping agent into liquid in a crucible a; and 2, slowly lowering the crucible position in the crucible b to realize that a part of liquid at the bottom of the crucible is slowly solidified into a solid from the bottommost part. And 3, after the crucible in the crucible c is slowly lowered and stopped, seeding, shouldering and equal-diameter operation are carried out. And 4, carrying out an equal-diameter growth stage in the d crucible. And 5, continuously growing the single crystal rod in the e crucible. And 6, finishing silicon single crystal drawing in the crucible f through an ending process. An initial state of'high-concentration melt + low-concentration solid 'is constructed before crystal pulling, and real-time and dynamic dilution compensation is performed on the concentration of a dopant of a main melt, so that the inherent defect of resistivity axial non-uniformity caused by a segregation effect in a traditional Czochralski method is effectively overcome.

A method for producing a single crystal using the Czochralski method, comprising the following steps: a step of measuring a space between a melt surface and a lower end of a seed crystal provided above the melt; a step in which the seed crystal is lowered on the basis of the space and the seed crystal is brought into contact with the melt; and a step of growing the single crystal at the lower end of the seed crystal by pulling the seed crystal while maintaining a state of contact with the melt, wherein, in the step of measuring the space between the melt surface and the lower end of the seed crystal, an image of the seed crystal and the melt surface is taken using a camera installed obliquely above the melt surface, an approximate circle of the edge of a real image is generated by approximating a circle from an approximately arcuate edge pattern at a lower end part of a real image of the seed crystal shown in the image taken by the camera, and similarly an approximate circle of the edge of a mirror image is generated by approximating a circle from an approximately arcuate edge pattern at an upper end part of a mirror image of the seed crystal reflected at the melt surface, and the space between the melt surface and the lower end of the seed crystal is calculated based on the distance from the center coordinates of the approximation circle of the edge of the real image to the center coordinates of the approximation circle of the edge of the mirror image, and wherein in the step of measuring the space between the melt surface and the lower end of the seed crystal, the approximate circle of the edge of the real image positioned above the approximate circle of the edge of the mirror image is obtained after the approximate circle of the edge of the mirror image is obtained from the captured image, and wherein a step in which the approximation circle of the edge of the mirror image is obtained comprises the following steps: a step of determining an upper end position of the mirror image of the seed crystal from a brightness distribution in a first region defined in advance in the captured image; a step of defining a second region including the upper end position of the mirror image of the seed crystal, and detecting an edge pattern of a part of the straight body from the mirror image of the seed crystal by performing a binarization process of the second region; and a step in which a circle is approximated from the edge pattern of the part of the straight body of the mirror image, where a step in which the approximation circle of the edge of the real image is obtained comprises the following steps: a step of setting a position where a difference value of brightness exceeds a predetermined threshold as a lower end position of the real image of the seed crystal when the first area is scanned upward from the center coordinates of the approximation circle of the edge of the mirror image; a step of defining a third region including the lower end position of the real image of the seed crystal, and detecting the edge pattern of the part of the straight body from the real image of the seed crystal by performing the binarization process of the third region; and a step in which a circle is approximated from the edge pattern of the part of the straight body of the real image.

The invention relates to the technical field of crystal growth, and discloses a method and a system for electrochemical in-situ characterization of crystal growth interface area change, and the method comprises the following specific steps: in a crystal growth process by a Czochralski method, measuring impedance between a seed crystal and a crucible containing a melt in real time to obtain an electrochemical impedance spectrum at the growth stage; performing equivalent circuit fitting on the measured electrochemical impedance spectrum to obtain fitting parameters of a corresponding circuit element and calculating equivalent capacitance of a growth interface of the electrochemical impedance spectrum; and calculating the crystal growth interface area through a parallel plate capacitor model based on the equivalent capacitance value. The method solves the problem that the prior art is not suitable for monitoring the crystal growth interface, and has the characteristics of high precision, nondestructive detection, no influence on crystal growth, simple process and controllable cost.

The invention belongs to the technical field of scintillation materials, and particularly relates to a chromium ion doped near-infrared scintillation crystal and a preparation method and application thereof. The chromium ion-doped near-infrared scintillation crystal has a molecular formula of A3B2-xCrxC3O12, x is greater than or equal to 0.005 and less than or equal to 0.1, and after a chromium ion-doped ultraviolet-visible light inorganic scintillator is adopted, light is emitted at the wavelength of 650-950 nm and has good wavelength matching with a silicon photoelectric detector. Besides, single crystal growth is carried out by adopting a Czochralski method, the crystal growth process is optimized, the ion doping concentration is regulated and controlled, the scintillation performance of the chromium ion doped near-infrared scintillation crystal in the near-infrared band is improved, the requirement of the chromium ion doped near-infrared scintillation crystal in the radiation detection field is further met, and the problem that an existing scintillation crystal is low in transparency is solved.

The invention provides a czochralski method monocrystalline silicon preparation method and a matched growth system. According to the Czochralski method monocrystalline silicon preparation method, a stabilization treatment step is executed after material melting is finished, the stabilization treatment step comprises a magnetic field closing stage and a magnetic field opening stage, and the lifting movement tracks of a quartz crucible in the two stages are the same and the rotation directions are opposite. According to the technical scheme, two-stage stabilization treatment of closing and opening of the magnetic field is set after material melting, and preferably, the lifting track, the total displacement and the rotation rate of the quartz crucible in the two stages are consistent in rate and movement and are opposite in direction, so that impact and scouring on the quartz crucible are reduced, high-temperature softening deformation is relieved, and chemical reaction of molten silicon and the crucible is inhibited; and the crucible loss is delayed.

The invention relates to the technical field of monocrystalline silicon production. The invention provides a shouldering control method for single crystal silicon production based on a czochralski method in order to solve the problems that in the prior art, detection hysteresis exists, and a shouldering opening cannot be pre-judged in advance. According to the method, a prediction model is trained based on static process data and dynamic process data, and then the opening moment and the opening size of the shouldering are predicted by using the trained prediction model. Static process data and dynamic process data are analyzed through a prediction model, an advanced prediction mechanism is achieved, predicted values of the shouldering splitting time and the opening size are given before shouldering opening, the process can be adjusted in time, the unstable condition in the shouldering process is solved, and the detection hysteresis quality is improved. The production stability and the process matching are ensured; manual intervention can be reduced, the technology is intervened in advance according to the prediction result, and frequent adjustment of technological parameters by technologists can be reduced.

A silicon single crystal is provided having markings indicating the boundaries of each crystal block, while a silicon single crystal is grown by the Czochralski method in which a melt is intermittently doped with a subdopant to form a plurality of single crystal blocks along the axial direction and the type and resistivity of each crystal block are controlled. It comprises a plurality of single crystal blocks 1 formed continuously in the direction of the crystal axis, each having a first resistivity within a predetermined range of variation in the direction of the crystal axis, and a high resistivity layer 2 having a second resistivity with a peak value having a tip protruding beyond the predetermined range.

The invention belongs to the technical field of metal material processing, particularly relates to a preparation method of a metal single crystal seed crystal, and belongs to the technical field of single crystal material preparation and crystal orientation control. The method comprises the following steps: selecting an original seed crystal, heating and melting high-purity metal, carrying out single crystal growth by adopting a czochralski method, carrying out crystal orientation analysis and labeling, directionally cutting out the seed crystal and the like. According to the method, through multiple times of shouldering / necking and X diffraction analysis, natural preferred growth of crystals and clear calibration of later crystal orientation are achieved, crystal orientation control is facilitated, the prepared single crystal metal rod has the large size (the diameter is 3-4 inches, and the length is 300 mm), multiple seed crystals can be obtained through repeated cutting, and the material utilization rate can be increased; the grain boundary and dislocation density is reduced in the continuous crystal orientation selection process, so that the crystal integrity is excellent; seed crystals in various growth directions can be obtained through directional cutting, different process requirements can be met, and the process compatibility is good.

The invention relates to a method for pulling a single crystal from a melt consisting of silicon and a dopant according to the Czochralski method, comprising the following steps in a given sequence: a) performing a time-dependent computer simulation of a predetermined crystal pulling process having a predetermined dopant concentration (C) in the melt, with the aim of obtaining a temperature gradient and a dopant gradient for each time increment t, wherein the two gradients are determined at the interface between the crystal and the melt in the normal direction of the melt interface, b) determining a maximum dopant concentration (Cmax) in the melt, and c) pulling up a single crystal having a dopant concentration less than the determined maximum dopant concentration (Cmax), characterized in that a parameter (CS) is calculated for each time increment t, which is determined by formula, wherein the parameter fCS is determined from the product of the average concentration (C) of the dopant in the melt, the density of the silicon melt, the Avgamde constant, the molar mass of the silicon and the slope of the liquidus, and then generating an average value of the values obtained for the parameter (CS) wherein only those values having the (CS) value less than zero are included, and determining the maximum dopant concentration (Cmax) by adapting the above defined dopant concentration (C) until the magnitude equals zero.

The invention relates to a single crystal furnace and a control method thereof. The single crystal furnace comprises a furnace body; the crucible is arranged in the furnace body; the water cooling screen is positioned above the crucible; the guide cylinder is arranged in the furnace body and surrounds the peripheral side of the water cooling screen; and the electromagnetic heating piece is arranged on the peripheral side of the water cooling screen in a surrounding mode and located on the inner side of the flow guide cylinder, the electromagnetic heating piece is further located at the end, close to the crucible, of the water cooling screen, synchronously ascends and descends along with the water cooling screen and the flow guide cylinder, and the electromagnetic heating piece is used for heating a solid-liquid interface between the silicon liquid and the crystal bar. Therefore, the electromagnetic heating element can locally heat the silicon liquid, so that a supercooling area generated on the surface of the silicon liquid due to too high pulling speed in the growth process of the czochralski silicon single crystal is eliminated, the crystal twisting phenomenon is inhibited, the uniformity and high quality of crystal growth are ensured, the yield of the crystal can be ensured, and the uniformity of a thermal field is ensured.

A method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, the method including providing the member being located above the melt, when a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the melt in a crucible, the method including: forming a through-hole in the member; measuring distance between the member and the melt surface, and observing position of mirror image of the through-hole with fixed point observation apparatus, the mirror image being reflected on the melt surface; then measuring a moving distance of the mirror image, and calculating distance between the member and the melt surface from a measured value and the moving distance of the mirror image, during the pulling of the crystal. The distance between the member and the melt can be precisely measured by the method.

The application discloses a single crystal growth ending method and system based on convex solid-liquid interface control and belongs to the technical field of semiconductor material preparation. The method is applied to the ending stage of Czochralski method single crystal silicon growth, the heating power, the pulling speed, the crystal rotation state and the crystal lifting state are cooperatively controlled, the solid-liquid interface is adjusted from a concave surface to a plane and a convex shape towards the melt in four steps, and the rapid ending is completed under the stable convex interface; the matching system comprises a single crystal furnace body and a heating power and a pulling parameter control module, and further comprises a state monitoring and central control module, so that the accurate cooperation and automatic control of process parameters are realized. The application fundamentally eliminates the generation conditions of dislocation back extension and hidden cracks, reduces the occurrence rate, shortens the ending time, has strong process controllability, can be upgraded on the existing equipment, and has a good industrialization and popularization prospect.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The utility model relates to the technical field of crystal growth, in particular to a pulling method crystal growth diameter control device which comprises a pulling furnace, a crucible is arranged in the pulling furnace, a heating mechanism used for heating the crucible is further arranged in the pulling furnace, and a driving mechanism is fixedly installed at the top end of the pulling furnace. The output end of the driving mechanism is fixedly connected with a lifting rod, the front end of the lifting rod slidably penetrates through the top end of the lifting furnace to the interior of the lifting furnace and is provided with a chuck, and the front end of the lifting rod is detachably and fixedly provided with a seed crystal through the chuck; an annular mounting groove is formed in the position, close to the front end, of the periphery of the lifting rod, and a stabilizing mechanism is arranged between the periphery of the lifting rod and the inner wall of the lifting furnace through the annular mounting groove; when the lifting rod is lifted, the front end position of the lifting rod is peripherally limited by the stabilizing mechanism, so that the stability of the lifting rod is improved, and the control accuracy of the crystal growth diameter is favorably improved.

The invention discloses a 1t; 111gt, 111gt; the invention relates to a method for controlling the stability of a wide surface at an equal-diameter stage of crystal orientation monocrystalline silicon, which comprises the following steps of: (1) after the equal-diameter diameter is stabilized, sequentially recording the variation range of the diameter of the monocrystalline silicon when the crystal rotates a circle at a diameter stabilizing position A, a diameter stabilizing position B and a diameter stabilizing position C through a client of the monocrystalline furnace, and calculating the difference values delta A1, delta A2 and delta A3 between the maximum diameter and the minimum diameter; (2) calculating diameter change rates alpha = (deltaA2-deltaA1) / deltad (B-A) and beta = (deltaA3-deltaA2) / deltad (C-B); comparing the values of alpha and beta; if alpha is greater than or equal to beta, maintaining the existing pulling speed to continuously grow the single crystal; if alpha is smaller than beta, the melt temperature is reduced to T2 from T1, and meanwhile, the pulling speed is reduced to V2 from V1 until alpha is larger than or equal to beta; and (3) repeating the steps (1) and (2), and controlling the diameter difference value of the single crystal after rotating for a circle within a range of 2mm. By adopting the method, the 1t can be produced by a Czochralski method; 111gt, 111gt; the wide surface change is dynamically judged in the crystal orientation single crystal silicon process, and the size of the wide surface is timely and effectively adjusted, so that the stability control of the wide surface change in the equal diameter stage is realized, and the single crystal quality is improved.

The invention belongs to the technical field of gallium oxide semiconductor materials, and particularly relates to an n-type high-carrier-concentration beta-Ga2O3 single crystal material and a preparation method and application thereof. The invention provides an n-type high-carrier-concentration beta-Ga2O3 single-crystal material and a preparation method for the n-type high-carrier-concentration beta-Ga2O3 single-crystal material, aiming at the technical bottleneck that a high-carrier-concentration gallium oxide single-crystal material cannot be prepared by a Czochralski method. The preparation method comprises the following steps: (1) preparing a low-carrier-concentration beta-Ga2O3 single-crystal material by adopting a melt method; (2) calculating the theoretical doping concentration of germanium atoms in the beta-Ga2O3 single crystal material; the method comprises the following steps: carrying out neutron irradiation treatment on a beta-Ga2O3 single crystal material with low carrier concentration to obtain a germanium-doped beta-Ga2O3 single crystal material; and (3) carrying out activation treatment on the germanium-doped beta-Ga2O3 single crystal material, so as to obtain the n-type beta-Ga2O3 single crystal material with high carrier concentration. The problem of spiral growth in the process of preparing the high-electron-concentration gallium oxide single crystal through a pulling method is solved, the process is simple, the carrier concentration of the prepared beta-Ga2O3 single crystal material is adjustable in the range of 1016-5 * 1020 / cm < 3 >, and industrial large-scale production can be achieved.

The present invention relates to the technical field of silicon single crystal preparation, and provides a quartz crucible for pulling silicon single crystals and a method for growing silicon single crystal ingots. On the inner cavity side surface of the quartz crucible, one or more first convex ridges protruding relative to the inner cavity side surface of the quartz crucible are arranged, and the first convex ridge pressing angle is 10° ≤ α1 ≤ 85°; the height of the first convex ridge is greater than the first boundary layer thickness of the liquid silicon on the inner cavity side surface of the quartz crucible, or on the inner cavity bottom surface of the quartz crucible, one or more second convex ridges protruding relative to the inner cavity bottom surface of the quartz crucible are provided, with a second convex ridge pressing angle α2, and the second convex ridge pressing angle α2 gradually decreases with the increase of the distance r from the z-axis, and the variation range is 2° < α2 < 78°, so as to suppress the liquid silicon flow and reduce the oxygen content. In the silicon single crystal preparation method, the equivalent angular velocity ω of the crucible rotation is used as an important adjustment parameter in the control method, which can simplify the process control process and more easily achieve the ideal control effect.

The invention discloses a preparation method of a low-oxygen magnesium fluoride crystal, and belongs to the technical field of crystal preparation. After the raw materials are molten, the mixed gas activated by the catalytic net is introduced into the crystal furnace in an intermittent pulse mode, active fluorine species in the mixed gas and oxygen impurities on the surface of the melt can be subjected to fluorination reaction so as to reduce the content of the oxygen impurities, airflow in the intermittent pulse ventilation mode is matched with rotation of the crucible to disturb the melt, a reaction interface is updated, and the reaction efficiency is improved. And finally, the low-oxygen magnesium fluoride crystal is obtained through a pulling method.

A polishing method of a silicon wafer, which includes a step of performing a front-stage polishing process and a subsequent fine polishing process as a final polishing process, in the polishing method of the silicon wafer, the fine polishing process in the final polishing process includes: a fine slurry polishing process using a slurry having a density of 1 x 10 13 cm 3 above as the second polishing liquid; and a pre-polishing process performed before the fine slurry polishing process and using a slurry having a density of 1 x 10 10 cm 3 above as the second polishing liquid. A manufacturing method of a silicon wafer, which, after forming a notch portion in a peripheral portion of a single crystal silicon ingot grown by a Czochralski method, and then slicing to obtain a silicon wafer, performs a polishing treatment on the obtained silicon wafer by the above polishing method of a silicon wafer.

The invention relates to the technical field of crystal growth, and discloses a method and system for in-situ characterization of a crystal state in a Czochralski method crystal growth process, and the method comprises the following specific steps: in the Czochralski method crystal growth process, measuring the impedance between a seed crystal and a crucible containing a melt in real time, and recording the crystal temperature by using a thermometer, the electrochemical impedance spectrum in the growth stage and the temperature of the corresponding crystal are obtained; performing equivalent circuit fitting on the plurality of electrochemical impedance spectrums to obtain the equivalent resistance of the corresponding crystal in each growth stage; and calculating the corresponding crystal length based on the equivalent resistance and the corresponding crystal temperature obtained by fitting in each growth stage. The method solves the problem that the existing measurement technology is not suitable for the Czochralski method crystal growth environment, and has the characteristics of high precision, nondestructive measurement, no hindering of crystal growth and strong real-time performance.

The present invention relates to the technical field of silicon single crystal preparation, and provides a quartz crucible with a non-rectangular or non-circular cross-section for pulling rectangular silicon single crystals and a method for growing rectangular silicon single crystal ingots by the Czochralski method. On the inner surface of the quartz crucible within a range of 2×42° that is symmetric about the line connecting the top of the convex portion and the center of symmetry of the pattern, 4u or 2n + 2m blades protruding relative to the inner surface of the quartz crucible are arranged to rotate around the z-axis. The angle between the blade and the xy plane, that is, the suppression angle α1, satisfies 10 ≤ α1 ≤ 80°; on the bottom surface of the inner cavity of the quartz crucible, one or more rotors protruding relative to the bottom surface of the inner cavity of the quartz crucible are arranged. A point P on the contour line of the rotor has a cutting-in angle, and the range of the cutting-in angle is 2° < α2 < 80°; thereby achieving the suppression of the liquid silicon flow and reducing the oxygen content.

The utility model relates to the technical field of heater pick-and-place devices, in particular to a heater pick-and-place device for producing single crystals by a czochralski method, which comprises a supporting rod, a plurality of connecting plates are arranged on the outer side wall of the supporting rod through connecting structures, and the other ends of the connecting plates are connected with a heater body. The connecting structure is a connecting groove formed in the supporting rod, so that the heater can be taken and placed more conveniently and quickly, unmanned operation can be achieved, manual intervention is reduced, and the yield in the production process is increased.

The present invention belongs to the field of semiconductor wafer manufacturing technology, and specifically relates to a method for growing gallium oxide single crystals using a cold crucible Czochralski method. The method involves first applying high-frequency heating to the gallium oxide raw material in a crucible, then maintaining the temperature for a certain period of time, and then increasing the heating frequency to completely melt the gallium oxide. The pressure of the cooling water is then adjusted to form a solid gallium oxide layer on the inner wall of the crucible, isolating the gallium oxide at the center from contact with the inner wall of the crucible. Crystal pulling is then performed, and the heating frequency is gradually reduced during crystal pulling. This technical solution, through the design of the crucible structure and the adjustment of the heating frequency of the high-frequency heating device, achieves the formation of a solid gallium oxide layer between the gallium oxide melt and the inner surface of the crucible during the crystal pulling process. This solid gallium oxide layer can completely isolate the gallium oxide inside from contact with the crucible material, preventing contamination of the produced gallium oxide crystals.

The invention relates to the technical field of semiconductors, and provides an artificial intelligence assisted czochralski method crystal seeding process method. According to the method, seeding process parameters directly related to crystal growth are selected from seeding historical data, and part of seeding historical data are selected for calibration to obtain the deviation between the actual seeding temperature and the ideal seeding temperature so as to obtain the ideal seeding temperature under the corresponding seeding process parameters, so that an artificial intelligence supervised learning model is trained; the trained artificial intelligence supervised learning model is adopted, the ideal seeding temperature of the furnace is obtained through prediction of the artificial intelligence supervised learning model according to the current seeding process parameters, a process engineer is assisted to set the proper seeding temperature, and convenience is provided for production; deviation is automatically corrected along with continuous production, and monocrystalline silicon crystals are stably, efficiently and continuously produced; according to the method, the defects of dependence on artificial experience, low efficiency, non-standardized operation and the like in manual seeding temperature determination can be overcome, and the method can be suitable for modernized large-scale production.

A crystal-growth controlling method and device, and a crystal growing apparatus, used for, in the process of growing a crystal by a pulling method, forming the crystal of the shape required by the cell side. The method includes: in a process of growing a crystal by the pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level; comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser.