863 results about "Czochralski method" patented technology

There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms/cm<3 >and not more than 1.5x10<18 >atoms/cm<3>, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms/cm<3 >and not more than 1.5x10<18 >atoms/cm<3 >is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.

There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that DELTAG may be 0 or a negative value, where DELTAG is a difference between the temperature gradient Gc (° C./mm) at the center of a crystal and the temperature gradient Ge (° C./mm) at the circumferential portion of the crystal, namely DELTAG=(Ge-Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C., and with controlling a pulling rate in a range between a pulling rate corresponding to a minimum value of the inner line of OSF region and a pulling rate corresponding to a minimum value of the outer line, when OSF region is generated in an inverted M belt shape in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a diameter of the crystal and the vertical axis represent a pulling rate. There can be provided a method of producing a silicon single crystal wafer by CZ method wherein OSF in the ring shape distribution generated when being subjected to thermal oxidation or latent nuclei of OSF is present in a low density, and neither FPD, COP, L/D, LSTD nor defect detected by Cu decoration is present under a stable manufacture condition.

This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 kΩcm, an oxygen concentration Oi of 5.0×10¹⁷ to 20×10¹⁷ atoms/cm³ (ASTM F-121, 1979), and either one of a nitrogen concentration of 1.0×10¹³ to 10×10¹³ atoms/cm³ (ASTM F-121, 1979) and a carbon concentration of 0.5×10¹⁶ to 10×10¹⁶ atoms/cm³ or 0.5×10¹⁶ to 50×10¹⁶ atoms/cm³ (ASTM F-123, 1981) by using a Czochralski method, processing the single crystal into wafers by slicing the single crystal, and subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere. A peak position of a resistivity serving as a boundary between a p-type region of a wafer surface side and a p/n conversion region of an inner side of a thickness direction is adjusted by the nitrogen concentration or the carbon concentration such that the peak position is set to a boundary depth in a range of 10 to 70 μm from the wafer surface.

A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably silicon nitride powder, to the vessel, and heating the vessel for a time sufficient to melt the silicon material and to dissolve the nitrogen-containing in the silicon material in order to form the melt. A nitrogen-doped silicon single crystal is then produced from the melt by the Czochralski method by pulling the silicon single crystal from the melt with a seed crystal.

This invention discloses a porous ceramic filtration plate coated with nanoscale ceramic filtration film for liquid-solid separation. The nanoscale ceramic filtration film is prepared by: hydrolyzing aluminum isopropoxide, preparing a sol with HNO3, refluxing, aging to form aluminum sol, adding Al2O3 nanopowder, mixing, dispersing to form uniform nanoscale film gel, uniformly coating onto the surface of a substrate by Czochralski method, drying and sintering. The obtained porous ceramic filtration plate can effectively block the majority of fine particles in ore slurry, and has such advantages as no blockage, long service life and wide applications.

The invention discloses a method for preparing a porcelain insulator surface super-hydrophobic coating, which takes ethyl orthosilicate as a presoma and absolute ethyl alcohol as flux, and comprises the following steps: preparing silicon dioxide sol through alkaline catalysis, and adding a silane coupling agent to perform the modification treatment; after the porcelain insulator surface is subjected to the cleaning treatment, dipping in the modified silicon dioxide sol for film coating through the czochralski method to form a primary coating and to obtain a micro-nanometer grade coarse structure which is similar to taro leaf; after drying, dipping in addition type liquid silicon rubber sol for secondary film coating through the czochralski method, and then placing into an oven for heat treatment at a temperature of 100-120 DEG C; and obtaining a transparent super-hydrophobic coating after subjecting the primary coating with the micro-nanometer coarse structure to the secondary film coating modification by the liquid silicon rubber with low surface energy.

It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.

An annealed wafer obtained by performing rapid thermal annealing on a silicon single crystal wafer sliced from a silicon single crystal ingot in which an entire plane is an OSF region, an N region outside an OSF region, or a mixed region thereof, the silicon single crystal ingot being grown by the Czochralski method, in which RIE defects do not exist in a region having at least a depth of 1 μm from a surface, a good chip yield of a TDDB characteristic is 80% or more, and a depth of a region where an oxygen concentration is decreased due to outward diffusion is within 3 μm from the surface, and a method for producing an annealed wafer.

The invention discloses a method for preparing colorless corundum monocrystal and a special corundum crystal growth furnace structure. The preparation method comprises steps of preprocessing raw materials, cleaning, seeding crystal, enabling the crystal to grow through a Czochralski method, enabling the crystal to grow freely, performing in situ annealing and a cooling treatment and finally obtaining the colorless corundum monocrystal. By the aid of the method, the Czochralski method is combined with a Kyropoulos method in a creative way, a stable temperature gradient environment which meets crystal growth requirements is provided by a corundum crystal growth furnace, the quality of prepared crystal monocrystal is good, the success ratio of the crystal growth exceeds 90%, and the method is suitable to industrial production, convenient, energy-saving, safe and reliable.

The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a wafer bulk layer in which oxide precipitates are present at a high density at the stage before the wafer is loaded into the device fabrication processes to give an excellent IG capability, and a method for manufacturing the annealed wafer. The present invention is directed to an annealed wafer obtained by performing heat treatment on a silicon wafer manufactured from a silicon single crystal grown by the Czochralski method, wherein a good chip yield of an oxide film dielectric breakdown characteristic in a region having at least a depth of up to 5 μm from a wafer surface is 95% or more, and a density of oxide precipitates detectable in the wafer bulk and each having a size not smaller than a size showing a gettering capability is not less than 1×10⁹/cm³.

The invention discloses an electrically conductive polymer-graphene composite electrochromic film. A preparation method of the film comprises the following steps: with an electrochemical polymerization method, a layer of electrically conductive polymer film is deposited on an electrically conductive substrate; a graphene oxide water solution is prepared with a modified Hummers method, and a graphene film is prepared with a metal base self-assembly synchronous reduction method; and the surface of the electrically conductive polymer film is covered by the graphene film with a Czochralski method, such that the composite electrochromic film is obtained. The composite electrochromic film provided by the invention has an innovative structure and excellent performances. The preparation method is simple.

There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.

A melting furnace is mounted adjacent a growth furnace in which a single crystal ingot is pulled from the melt according to the Czochralski method. The melting furnace comprises a receiving container for melting therein raw material in a particle or powder form falling in it from a feeder. The receiving container accommodates a set of slope-wise plates providing a distributed sliding of partially melted raw material particles over the surface of these plates and their complete melting while moving downward; eventually the melted raw material flows into the crucible of the growth furnace through a heated conveying tube extending slantingly from the conical bottom of the receiving container to the crucible through coaxial openings in housings of both furnaces. The rate of feeding is defined solely by a feeder, and at continuous feeding the raw material flows continuously by gravity from the feeder to the crucible of the growth furnace, first in a solid state (powder, granules, pellets, etc.) and then in a liquid state.

The invention discloses a copper-graphene composite material and a method for preparation of a graphene film on a copper-based metal surface. The method comprises: first utilizing a strong oxidizing agent to fully oxidize graphite to prepare a graphene oxide solution; and then preparing a graphene oxide coating of certain thickness on a copper sheet surface by a Czochralski method, and finally making use of oxidation reduction to prepare the graphene film. The method of the invention combines the oxidation reduction method with the Czochralski coating method to prepare the graphene film on a copper surface, wherein the oxidation reduction method is characterized by simple principle, convenient operation, low cost, and ability to prepare a great amount of graphene, and the Czochralski coating method has the advantages of simple equipment, less investment, and is a good method for preparation of high performance films. The coated film has a high degree of uniformity, uniform particle size, and good activity. Being convenient to operate, the method provided in the invention has the ability to prepare films of complex shapes and large areas, and is easy to realize industrialization.

The invention discloses a preparation method of a nano TiO2 self-cleaning transparent coating. The method comprises the following steps: 1) preparation of a nano TiO2 slurry: mixing a nano TiO2 powder and a dispersant according to proportion and stirring thoroughly, and regulating a pH value to prepare the nano TiO2 slurry; 2) preparation of a nano TiO2 self-cleaning coating: mixing the nano TiO2 slurry and aqueous polyurethane, adjusting a pH value, adding a leveling agent, a defoaming agent and a thickener for dispersion, so as to prepare a nano self-cleaning coating; and 3) preparation of a nano TiO2 self-cleaning transparent coating: immersing a clean glass substrate in the prepared nano self-cleaning coating liquid, and preparing a transparent coating on the glass substrate by using a spin coating method / Czochralski method / bar coating method. The nano TiO2 transparent coating prepared by the method provided by the invention has high visible light transmittance and self-cleaning function, and is suitable for the field of building glass, such as antimicrobial coating and doors and window.

A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

The invention provides a synthetic melting body method of growing crystal, using pulling method to seed, shrink neck, and extend shoulder, as the growth at equal diameter, adopting soaking method and/or temperature gradient method. It can grow large-sized high-quality crystals, especially oxide crystals like sapphire substrate crystal, doped or undoped aluminum oxide crystal, aluminate crystal, etc. It has the advantages of adopting pulling, soaking and temperature gradient methods: able to grow large-sized crystals, a little pollution, and able to observe the liquid surface and the growing situation of crystal; able to use the original pulling devices; the crystal quality is good, and has low dislocation density and good integrity and optical uniformity, easy to industrialize.