The invention discloses a
system and a process for reducing long film
distortion caused by stress
mutation in an EPI process, and relates to the technical field of
wafer production, an edge defect detection module is used for scanning an annular region of a
wafer edge, dividing the region into N circumferential sectors, identifying geometric parameters of microcracks in each sector j, and determining the micro-crack
distortion in each sector j; and outputting a structured defect coordinate
list organized according to each sector j. According to the method, the edge of a
wafer is divided into N sectors, the angular position, the
radial position and the depth of each micro-crack are obtained based on
laser scattering imaging, structural features such as equivalent crack depth, average
radial position and nearest neighbor distance are generated through
polymerization, and a five-dimensional
stress concentration factor (SCF)
lookup table constructed offline is combined with material parameters, so that the depth of each micro-crack is obtained. The thermal stress risk of each sector is quickly predicted, and when the SCF exceeds a threshold value of 1.8, the
system only implements bias
voltage modulation on the high-risk sector, so that accurate intervention that the high-risk sector is reinforced when the high-risk sector is weak is realized.