The invention relates to a vertical-external-cavity surface-emitting
semiconductor laser with an integrated micro lens and belongs to the technical field of
semiconductor optoelectronics. The vertical-external-cavity surface-emitting
semiconductor laser solves the problems of high difficulty in structural manufacturing and
instability in operation of an existing VECSEL (vertical vertical-external-cavity surface-emitting-
laser). The laser comprises an N-face
electrode, an N-type substrate, an N-type DBR (
distributed bragg reflector), an
active layer, an oxidation limiting layer, a P-type DBR, a P-face
electrode, a micro lens structure, an external coupled cavity and an
external cavity DBR. When the P face is used for light outgoing, the micro lens structure is positioned at a light outlet and formed on the P-type DBR, the external coupled cavity grows on the micro lens structure, and the
external cavity DBR grows on the external coupled cavity. When the N face is used for light outgoing, the micro lens structure is positioned at the light outlet and formed on the N-type DBR, the external coupled cavity grows on the micro lens structure, and the
external cavity DBR grows on the external coupled cavity. The problem of failure in alignment of an external cavity reflector center to a light outlet center is solved by the integral structure of the vertical-external-cavity surface-emitting semiconductor laser.