Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array

A laser array, monolithic integration technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of inability to achieve monolithic integration, affecting the output power, difficult installation and adjustment, etc. , the effect of small divergence angle

Active Publication Date: 2010-09-22
SUZHOU EVERBRIGHT PHOTONICS CO LTD
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  • Abstract
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Problems solved by technology

[0007] The present invention solves the problem that the existing external coupling (Talbot external cavity) phase-locking technology cannot realize monolithic integration, and installation and adjustment are difficult; the internal coupling (leaky wave coupling) phase-locking technology affects the light output power due to the limited width of the light output area. A Monolithic Integrated Phase-locked Plane Emitting Distributed Feedback Semiconductor Laser Array

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  • Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array
  • Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array
  • Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array

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specific Embodiment approach 1

[0016] Embodiment 1: A monolithic integrated phase-locked surface emission distributed feedback semiconductor laser array described in this embodiment includes M distributed Bragg reflectors and N surface emission distributed feedback semiconductor laser array strips, each distributed Bragg reflector The device and each surface-emitting distribution feedback semiconductor laser array bar are periodically arranged at intervals, and each of the surface-emitting distribution feedback semiconductor laser array bars and the distributed Bragg reflectors at the left and right ends constitute an external cavity feedback laser; each of the surface-emitting distribution feedback lasers The distributed Bragg reflector at the left end of the feedback semiconductor laser array bar provides the optical feedback of the external cavity for the external cavity feedback laser; the distributed Bragg reflector at the right end of each surface emitting distributed feedback semiconductor laser array ...

specific Embodiment approach 2

[0023] Embodiment 2: Embodiment 1 is a specific embodiment of the single-chip integrated phase-locked surface emission distribution feedback semiconductor laser array described in Embodiment 1; combined figure 1 Further explain this implementation mode;

Embodiment 1

[0024]Embodiment 1: The material system used in this embodiment is InGaAs / InGaAsP, and the output wavelength is 940nm; the monolithic integrated structure includes four distributed Bragg reflectors and three surface emitting distributed feedback semiconductor laser array strips arranged at regular intervals, The first surface-emitting distributed feedback semiconductor laser array bar 2, the first distributed Bragg reflector 1 at the left end, and the second distributed Bragg reflector 3 at the right end constitute an external cavity feedback laser, and the first distributed Bragg reflector is the The external cavity laser provides external cavity feedback light, and the second distributed Bragg reflector provides end face reflection for the external cavity feedback laser; The third distributed Bragg reflector 5 constitutes an external cavity feedback laser, the second distributed Bragg reflector 3 provides external cavity feedback light for the external cavity laser, and the t...

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Abstract

The invention relates to a monolithic phase-locked surface-emitting distributed feedback semiconductor laser array, in particular to a new semiconductor laser array phase-locked structure solving the problems of monolithic incapability and difficult mounting and debugging of a traditional external coupling (Talbot outer cavity) phase-locked technology and the problem of a traditional internal coupling (leakage wave coupling) phase-locked technology that the light extraction efficiency is influenced by the limited width of a light extraction area. The structure comprises distribution Bragg reflectors and surface-emitting distribution feedback semiconductor laser array strips which are periodically and alternately arranged, an outer cavity feedback laser is formed by each surface-emitting distribution feedback semiconductor laser array strip and distribution Bragg reflectors at the left end and the right end, the distribution Bragg reflector at the left end provides the optical feedback of the outer cavity for the outer cavity feedback laser, the distribution Bragg reflector at the right end provides end surface reflection, and another outer cavity feedback laser is formed by the distribution Bragg reflector at the right end and the next laser array strip. The invention can be applied to the fields of military affairs, industries, medical treatment, space optical communication, and the like.

Description

technical field [0001] The invention relates to a new semiconductor laser array phase-locked structure, especially a semiconductor laser array with high power and coherent output. Background technique [0002] Semiconductor lasers have many advantages such as small size, high efficiency, long life, and easy integration. Compared with incoherent lasers, coherent lasers have better spatial modes, higher peak power and power density, and have wider application prospects in optical interconnection, optical communication, industry, military, and medical treatment. Manufacture of high-power, high-coherence, diffraction-limited semiconductor lasers has always been the goal pursued by people. [0003] The key to realizing coherent output of semiconductor lasers is to lock the phase between each laser unit. According to the different coupling methods, it can be divided into internal coupling and external coupling. Internal coupling methods mainly include: leaky wave coupling, evane...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/187H01S5/065H01S5/14H01S5/22
Inventor 胡永生秦莉叶淑娟张楠宁永强
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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