393results about How to "Small temperature drift" patented technology

A voltage reference source with high-order temperature compensation circuit belongs to the electronic technical field. The voltage reference source comprises a starting current and positive temperature coefficient current generating circuit, a negative temperature coefficient current generating circuit, a high-order temperature compensation current generating circuit and a superimposition and summation output circuit. The added high-order temperature compensation current generating circuit performs linearization to the breakover voltage VBE between the voltage of the base and emitter of a triode to obtain a high-order compensation amount which is in agreement with the high-order temperature amount of the PN junction voltage, and the high-order temperature coefficient of the PN junction voltage can be eliminated fundamentally after proportional offset, thus realizing a CMOS voltage reference source with the lower temperature coefficient. The voltage reference source is prepared by the common CMOS technology with lower cost, has extremely low temperature coefficient, less power consumption and smaller area, and can be used in the reference circuits such as analog circuits and digital-analog hybrid circuits which are required to have low temperature coefficients.

The invention provides a method for automatically correcting temperature drift of an electrical vortex sensor. According to the method, a certain impedance measuring circuit is utilized to obtain the equivalent inductance and the resistance of a detection coil, the relationship, changing along with temperature and measurement, of the inductance and the resistance of the detection coil is utilized to remove the influence of temperature changes and extract actual measured change information. According to the method, signals of the vortex sensor composed of an impedance measuring module (4) and a rectification calculating module (5) is used for conditioning the circuit, so that to-be-measured information is obtained, rectification is conducted automatically, and the influence of temperature changes is removed at the same time. According to the method, when temperature drift is rectified, no extra probes or coils or temperature sensors are further arranged, and temperature drift rectification effect is remarkable. Moreover, the method has the advantages of being wide in application range, simple in structure, easy to implement and the like. When the method is used for automatically rectifying the temperature drift of a probe of the electrical vortex sensor, temperature drift coefficients can generally be reduced to below 5nm/DEG C from 500nm/DEG C.

A process for producing a plate for a capacitive sensor element. In one embodiment of the present invention, a method includes forming a plate from a substantially pure aluminum oxide slurry, heating the plate a first time in an oven to sinter the plate, cooling the plate after the heating step, heating the plate a second time to smooth the plate, and cooling the plate after the second heating.

The invention relates to a monolithic phase-locked surface-emitting distributed feedback semiconductor laser array, in particular to a new semiconductor laser array phase-locked structure solving the problems of monolithic incapability and difficult mounting and debugging of a traditional external coupling (Talbot outer cavity) phase-locked technology and the problem of a traditional internal coupling (leakage wave coupling) phase-locked technology that the light extraction efficiency is influenced by the limited width of a light extraction area. The structure comprises distribution Bragg reflectors and surface-emitting distribution feedback semiconductor laser array strips which are periodically and alternately arranged, an outer cavity feedback laser is formed by each surface-emitting distribution feedback semiconductor laser array strip and distribution Bragg reflectors at the left end and the right end, the distribution Bragg reflector at the left end provides the optical feedback of the outer cavity for the outer cavity feedback laser, the distribution Bragg reflector at the right end provides end surface reflection, and another outer cavity feedback laser is formed by the distribution Bragg reflector at the right end and the next laser array strip. The invention can be applied to the fields of military affairs, industries, medical treatment, space optical communication, and the like.

The invention discloses an intelligent pressure transmitter, which is provided with a digital temperature sensor and a pressure sensor. Temperature signals and pressure data can be acquired in real time, the pressure data are converted by an A/D (analog/digital) conversion module and then transmitted to a microcontroller for processing together with the temperature signals, so that temperature compensation, zero drift compensation and nonlinear rectification are realized for the pressure sensor. The intelligent pressure transmitter can overcome the shortcoming of zero drift of a traditional pressure transmitter, and has an excellent zero drift compensation characteristic and a fine time drift suppression characteristic.

The invention provides a pressure sensor micro-nano structure with the high stability under a high-temperature environment. The pressure sensor micro-nano structure comprises a silicon carbide membrane sheet, a reflection membrane, a semi-reflection membrane, a bonding layer, a silicon carbide substrate, a packaging layer and a sapphire optical fiber, wherein the reflection membrane is plated in the middle of the silicon carbide membrane sheet; the semi-reflection membrane is plated at the tail end of the sapphire optical fiber; the bonding layer is located between the silicon carbide membrane sheet and the silicon carbide substrate; and the sapphire optical fiber is connected with the silicon carbide substrate through the packaging layer, and is used for transmitting an optical signal. The detection device disclosed by the invention is simple in structure and strong in anti-interference performance, and pressure detection under the high-temperature environment can be realized.

The invention belongs to the technical field of optic fiber gyroscopes, and in particular relates to a preparation method of a sensing ring capable of reducing optic fiber gyroscope temperature drift. The method of the present invention adopts a quadrupole symmetry method and an octupole symmetry method to wind the optical fiber ring. With the method of the present invention, the shupe phase error due to the temperature is inhibited, and the temperature performance of the gyroscope is improved.

This invention discloses a CMOS craft compatible relative humidity sensor which is used in examining the humidity, by the substrate, taught and influenced the level, under the electric capacity the pole plate, on the electric capacity the pole plate is composed, teaches and influences the level to be located in on the substrate, under the electric capacity the pole plate even shop in taught and influenced on the level, on the electric capacity the pole plate was located thesubstrate and the oxide layer place above: The advantages are simple structure, the temperature drift slightly, strong anti-interference low cost, quickly response and easy detection.

The invention provides a digital geological compass and a method for measuring geological occurrence, an azimuth angle and inclination angle data acquisition module, a laser module, a power supply circuit and a display module respectively connected to a storage and control module are provided in a casing; the azimuth angle and inclination angle data acquisition module comprises a magnetic sensor, an acceleration sensor and an A/D converter; the storage and control module reads the azimuth angle and inclination angle data measured by the azimuth angle and inclination angle data acquisition module, a pitching angle and a roll angle are obtained, the azimuth angle, the pitching angle and the roll angle data are sent to the display module for displaying and storing when necessary. The digital geological compass and the method for measuring geological occurrence have the advantages of high precision, convenient operation and high efficiency, and have angle compensation function by using a three-dimensional (shaft) technology when the azimuth angle is read, the real-time reading under compass horizontal are not necessary, so that the operation time can be greatly reduced.

The invention discloses a method for conducting pressure calibration on diffused silicon sensors through an upper computer. The method is based on digital acquisition conducted on output of the diffused silicon sensors and based on temperature and pressure compensation conducted on acquired data. A device for conducting pressure calibration on the diffused silicon sensors comprises a microprocessor, a communication interface circuit, a sensor digitalization interface circuit and a data storage circuit. The method avoids the situation that the diffused silicon sensors are calibrated generally through adjustment of zero-point potentiometers and full-scale potentiometers in circuits in the calibration process of the diffused silicon sensors at present. The method overcomes the defects that precision drift of the diffused silicon sensors is caused by drift of the potentiometers in the circuits, the diffused silicon sensors cannot be calibrated in batches, and linear precision of the diffused silicon sensors cannot be adjusted. The method has the advantages that stability is good, the precision is high, temperature drift is little, and calibrating intellectualization is achieved.

The invention discloses a stable holder based on an MEMS gyroscope combination. The stable holder is composed of a class-A MEMS gyroscope sensor and a class-B gyroscope sensor. The class-A MEMS gyroscope sensor has high bandwidth and low noise. The class-B gyroscope sensor has low temperature drift and random drift. Multiple gyroscope sensors of different types are used to construct a combined sensor unit, and the advantages of different types of sensors are exerted through a reasonable control architecture and process. Therefore, the inertial measurement feedback and stability control performances are significantly improved, and the problem that the performance requirements are usually not satisfied in high-performance inertial attitude measurement and attitude stabilization is solved. The invention further discloses a control method of the stable holder based on an MEMS gyroscope combination.

The invention discloses a manufacturing method of a high-precision pressure sensor based on silicon-silicon bonding. The high-precision pressure sensor comprises a sensitive silicon wafer layer and a substrate silicon wafer layer and is characterized in that the substrate silicon wafer layer is connected to the back of the sensitive silicon wafer layer, and the sensitive silicon wafer layer and the substrate silicon wafer layer use silicon-silicon bonding process to form a pressure sealing cavity; the substrate silicon wafer layer and the sensitive silicon wafer layer are made of homogenous monocrystalline silicon materials, and the substrate silicon wafer layer is provided with a pressure guide through hole in the center. The manufacturing method has the advantages that the substrate silicon wafer layer and the sensitive silicon wafer layer are made by using the monocrystalline silicon materials as the substrates, the substrate silicon wafer layer and the sensitive silicon wafer layer are connected in an airtight manner through the silicon-silicon bonding process, the pressure sealing cavity of a silicon-silicon homogenous material structure is formed, various influences, caused by the pressure sealing cavity of the silicon-glass heterogeneous material structure of a conventional pressure sensor, on the performance of the sensor due to the feature difference of two different materials are avoided, static pressure errors are reduced effectively, temperature excursion of the sensor is lowered, and the comprehensive precision of the sensor is increased.

The invention discloses a microelectromechanical z-axis detection structure with low thermal drifts. A MEMS detection structure is provided with: a substrate having a top surface, on which a first fixed-electrode arrangement is set; a sensing mass, extending in a plane and suspended above the substrate and above the first fixed-electrode arrangement at a separation distance; and connection elastic elements that support the sensing mass so that it is free to rotate out of the plane about an axis of rotation, modifying the separation distance, as a function of a quantity to be detected along an axis orthogonal to the plane. The MEMS detection structure also includes: a coupling mass, suspended above the substrate and connected to the sensing mass via the connection elastic elements; and an anchoring arrangement.

The invention relates to a complementary metal-oxide-semiconductor (CMOS) integrated circuit, in particular to a high-accuracy resistance-capacitance (RC) oscillator. The RC oscillator provided by the invention adopts a two-stage regulation way, wherein first-stage regulation is the regulation of a comparison reference voltage, and aims to regulate the output frequency of the oscillator into the range of second-stage regulation; and the second-stage regulation is the regulation of charging current, and aims to make the accuracy of the output frequency of the oscillator meet designing requirements. The generation of the comparison reference voltage and the constant current source designing of the charging current are both based on a band gap reference source so as to achieve the advantage that the reference voltage and the charging current both have low temperature coefficients to endow the RC oscillator with the advantage of low temperature drift. The RC oscillator adopting the two-stage regulation design overcomes the shortcoming of the conventional structure that variations of integrated circuit process parameters may cause function failures, and simultaneously, the two-stage regulation is operable and convenient to actually operate.

A detection circuit for measuring micro differential capacitor comprises a frequency selection circuit, a phase-locked loop tracking circuit, a logic gating circuit and a low-pass filtering circuit, wherein the frequency selection circuit and the phase-locked loop tracking circuit are formed into resonance units; the resonance frequency of each resonance unit is determined by the capacity of a to-be-measured differential capacitor; and two sets of resonance units formed by the differential capacitor can realize frequency output in direct proportion to the capacity of the differential capacitor under the action of a back-end logic gating circuit and the low-pass filtering circuit. The detection circuit has high detection precision and output linearity, small temperature drift and strong anti-interference capacity; moreover, the detection circuit has simple circuit structure and is convenient for engineering and integrated circuit making. The detection circuit is suitable for the measurement based on micro differential capacitor sensitive mechanism in the fields of medical apparatus, security-monitoring detection, inertia device and fluid characteristics measurement.

The invention provides a silicon micro-resonant type accelerometer which mainly comprises a glass substrate. A silicon micro-mechanical structure is bonded to the surface of the glass substrate and comprises a mass block and four silicon micro-mechanical structure units, the mass block is of a central symmetry structure, and the mass block is surrounded by the four silicon micro-mechanical structure units which are arranged in a pairwise symmetry mode; each silicon micro-mechanical structure unit comprises a resonant type double-end tuning fork, a micro-mechanical lever and a decoupling guiding support, one ends of the decoupling guiding supports are connected with the mass block to receive inertia force, the other ends of the decoupling guiding supports are connected with one force input ends of the micro-mechanical levers, and the received inertia force is transmitted by one force output ends of the micro-mechanical levers to the resonant type double-end tuning forks.

The invention relates to a high-voltage power supply special for an X-ray tube, which is widely applied to various types of X-ray apparatuses in the aspects of medical diagnosis, nondestructive examination, public traffics, safety inspection, and the like in the fields of medical treatment, science education, industry, and the like. The high-voltage power supply comprises a power supply circuit sealed in a shell, wherein three connectors are welded on the power supply circuit, and the power supply circuit comprises a filament power supply circuit, a high-voltage control circuit and a high-voltage drive and output circuit; and the high-voltage control circuit is respectively connected with the filament power supply circuit and the high-voltage drive and output circuit. The high-voltage power supply has the advantages of low electromagnetic radiation, strong capacity of resisting disturbance, high-precision tube flow control, functions of power-on time delay and soft start, small temperature drift, good long-term stability, high reliability, compact structure, small outline size compared with contrasts, lighter weight and easy mounting.