107 results about "Surface acoustic wave resonators" patented technology

Aspects and embodiments disclosed herein include a surface acoustic wave resonator comprising a multilayer piezoelectric substrate and interdigital transducer (IDT) electrodes disposed on an upper surface of the multilayer piezoelectric substrate, the IDT electrodes having at least partially rounded upper sides.

The invention discloses a surface acoustic wave resonator and a filter. The resonator comprises an interdigital transducer arranged on a piezoelectric substrate, reflecting gratings located on the two sides of the interdigital transducer and at least one laminated protection structure arranged in the outer side area of the reflecting gratings. The laminated protection structure comprises an interdigital capacitor arranged on the surface of the piezoelectric substrate and an organic material layer covering the interdigital capacitor; two bus bars of the interdigital capacitor are electrically connected with two signal ports of the resonator respectively, and the interdigital capacitor is connected with the interdigital transducer in parallel. According to the invention, the anti-ESD capability of the resonator can be effectively improved under the condition of not increasing additional process steps and not changing the electrode structure of the normal working area of the resonator.

The present application relates to bolt state monitoring technical field, disclose a kind of embedded wireless passive bolt tightness state monitoring method based on surface acoustic wave technology, specifically includes the following steps: based on the real-time acquisition frequency drift amount of surface acoustic wave resonator, and the looseness risk of bolt is judged in real time, generates looseness warning signal and safety signal;Based on warning signal, the frequency drift amount before generating warning signal is analyzed at change rate, and the change rate degree is judged;Based on the change rate degree judging result, the time point when frequency drift amount reaches frequency drift amount risk value is predicted.The present application can judge bolt looseness risk in real time, generates warning signal in time when bolt appears looseness sign, reminds relevant personnel to pay attention to bolt state, avoid bolt looseness further development and not be perceived, to reduce the possibility of equipment failure, accident.

The application provides a manufacturing method of a surface acoustic wave resonator and the surface acoustic wave resonator, and the manufacturing method comprises the following steps: providing a substrate; forming a plurality of interdigital electrode grooves and mass block grooves on the substrate, at least one mass block groove in communication with the interdigital electrode groove is arranged on each interdigital electrode groove; and arranging metal material in the interdigital electrode groove and the mass block groove to integrally form an interdigital electrode and a mass block. By forming a plurality of interdigital electrode grooves and mass block grooves on the substrate first, and then arranging metal material in the interdigital electrode groove and the mass block groove to integrally form an interdigital electrode and a mass block, the interdigital electrode and the mass block are formed simultaneously through one step, the processing steps are reduced, the production efficiency is improved, there is no separated interface between the integrally formed interdigital electrode and the mass block, the suppression effect of the mass block on the second harmonic wave can be ensured, the stability of the surface acoustic wave resonator is improved, and the product yield is ensured.

The invention discloses a surface acoustic wave resonator and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a piezoelectric substrate which comprises a first region and a second region; forming a first metal layer on the piezoelectric substrate, patterning the first metal layer to form a first interdigital transducer in the first region and a first lead connected with the first interdigital transducer, and forming a second lead in the second region; forming a first passivation layer covering the first interdigital transducer, wherein the first passivation layer has a first thickness; and forming a second metal layer covering the first passivation layer, patterning the second metal layer to form a first bonding pad above the first lead in the first region, and forming a second interdigital transducer and a second bonding pad above the second lead in the second region. According to the invention, the lead connected with the second interdigital transducer is formed while the first interdigital transducer is formed, and the first bonding pad and the second bonding pad are formed while the second interdigital transducer is formed, so that the process steps and cost of the bonding pad layer are saved.

This application provides a surface acoustic wave (SAW) resonator and an electronic device. The SAW resonator includes interdigital transducers; along the SAW propagation direction, the duty cycle of the interdigital transducers gradually decreases, while the finger spacing gradually increases. This gradual decrease in duty cycle and increase in finger spacing along the SAW propagation direction helps reduce the excitation of stray modes and decrease the nonlinear harmonics generated by the coupling of the stray mode strain field E1 and the electrostatic field E2, effectively suppressing the generation of nonlinear harmonics and improving nonlinear effects.

An apparatus for a surface acoustic wave (SAW) apparatus having a dual mode (DMS) resonator configuration with near-synchronous operation is disclosed. One aspect includes a piezoelectric material, a first reflector disposed over the piezoelectric material, a second reflector disposed over the piezoelectric material, and a plurality of interdigital transducers (IDTs) disposed over the piezoelectric material and positioned between the first reflector and the second reflector, wherein a pitch of the electrode fingers in the first reflector and the second reflector is greater than a pitch of the electrode fingers in the plurality of interdigital transducers, and wherein a variation in the pitch of the electrode fingers in the plurality of interdigital transducers is less than 3% across the plurality of interdigital transducers.

A surface acoustic wave resonator comprising a multilayer piezoelectric substrate including a layer of piezoelectric material, and interdigital transducer (IDT) electrodes disposed on the layer of piezoelectric material, the IDT electrodes including a first and second bus bars, a first plurality of electrode fingers extending from the first bus bar toward the second bus bar, and a second plurality of electrode fingers extending from the second bus bar toward the first bus bar and interleaved with the first plurality of electrode fingers in a central region of the resonator, gap regions defined between tips of the first plurality of electrode fingers and the second bus bar and between tips of the second plurality of electrode fingers and the first bus bar, regions of piezoelectric material forming the layer of piezoelectric material in the gap regions having a lesser permittivity and / or piezoelectricity than the piezoelectric material in the central regions.

A surface acoustic wave resonator (100) comprises a layered substrate including a carrier substrate (110) and a dielectric layer (112) having a low acoustic velocity. Another dielectric layer (122) is disposed on a piezoelectric layer (113) and interdigitated electrodes (131, 132) having an acoustic velocity lower than the acoustic velocity of the carrier substrate (110) and a positive temperature coefficient of frequency.

An apparatus for a surface acoustic wave (SAW) device having an aluminum nitride substrate layer is disclosed. In one aspect, a SAW includes: a substrate layer comprising an aluminum nitride (AlN) substrate layer, an electrode structure including interdigitated transducers, and a piezoelectric layer disposed between the electrode structure and the substrate layer. In some aspects, the piezoelectric layer is lithium niobate or lithium tantalate.

This application discloses a surface acoustic wave (SAW) resonator, filter, and electronic device, belonging to the field of semiconductor technology. The SAW resonator includes: a substrate; a piezoelectric layer located on one side of the substrate along its thickness direction; an interdigital transducer located on the side of the piezoelectric layer opposite to the substrate, the interdigital transducer including a plurality of electrode fingers extending along a first direction and spaced apart along a second direction; the overlapping region of the plurality of electrode fingers along the second direction constitutes an active region; the thickness direction, the first direction, and the second direction are mutually perpendicular; a functional layer located in the active region and between the plurality of electrode fingers, the SAW velocity of the functional layer being greater than the SAW velocity of the piezoelectric layer. This application can suppress stray modes and improve the performance of the resonator.

The invention discloses a surface acoustic wave resonator and electronic equipment, and belongs to the technical field of surface acoustic wave devices. The surface acoustic wave resonator includes: a piezoelectric layer; the interdigital transducer is arranged on one side of the piezoelectric layer, the interdigital transducer comprises two interdigital electrodes which are oppositely arranged in the first direction, each interdigital electrode comprises a bus bar, a first interdigital and a second interdigital, and the first interdigital and the second interdigital are connected with the bus bar and extend in the first direction; the first interdigitals and the second interdigitals on the same interdigital electrode are alternately arranged along a second direction intersected with the first direction, and the first interdigitals and the second interdigitals on the two interdigital electrodes are oppositely arranged and have gaps; the length of the first interdigitals is greater than that of the second interdigitals, the first interdigitals at least extend along the second direction in a virtual gap region to form an additional phase shift element, and the virtual gap region is a region corresponding to the gap and extending along the second direction. Transverse energy leakage of the surface acoustic wave can be reduced, and the performance of the surface acoustic wave resonator can be improved.

A radio frequency multiplexer comprises a piezoelectric substrate, a first surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of a first metal and a second metal layer disposed on the first metal layer and formed of a second metal having a higher density than the first metal, and a second surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of the first metal, but lacking the second metal layer.

This application discloses a surface acoustic wave (SAW) resonator, filter, and electronic device, relating to the field of resonators. The SAW resonator includes: a piezoelectric substrate; interdigitated electrodes located on one side surface of the piezoelectric substrate; the interdigitated electrodes include first and second fingers alternately arranged along a first direction, the first and second fingers extending along a second direction, the first and second directions intersecting in a plane parallel to the piezoelectric substrate; a first groove is formed in the surface of the piezoelectric substrate between adjacent first and second fingers; two reflective gratings are disposed on the same side surface of the piezoelectric substrate as the interdigitated electrodes; in the first direction, the interdigitated electrodes are located between the two reflective gratings; the reflective gratings include multiple third fingers arranged sequentially along the first direction; a second groove is formed in the surface of the piezoelectric substrate between adjacent third fingers. The technical solution of this application can improve the steepness of the filter in the transition band.

The present application belongs to the technical field of resonators. Provided are a surface acoustic wave resonator, a filter, a radio frequency front-end module and an electronic device. The surface acoustic wave resonator comprises an interdigital transducer, the interdigital transducer comprising a first bus bar, a second bus bar, a plurality of first electrode fingers, and a plurality of second electrode fingers. A first dielectric block is provided between each first electrode finger and the second bus bar, the first dielectric block being separately and fixedly connected to the first electrode finger and the second bus bar. A second dielectric block is provided between each second electrode finger and the first bus bar, the second dielectric block being separately and fixedly connected to the second electrode finger and the first bus bar. The first dielectric blocks reduce the vibration amplitude of the first electrode fingers, and the second dielectric blocks reduce the vibration amplitude of the second electrode fingers. Thus, reducing the vibration amplitude of the first electrode fingers and the vibration amplitude of the second electrode fingers can suppress the shear horizontal (SH) mode and coupled modes of the surface acoustic wave resonator.

The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonance device, which comprises a substrate comprising a piezoelectric layer; the interdigital electrode is located on the piezoelectric layer, and the interdigital electrode sequentially comprises a first bus, a first gap part, an overlapping part, a second gap part and a second bus in the first direction; the piezoelectric layer sequentially comprises a first part, a first failure part, an effective part, a second failure part and a second part in the first direction, and the electromechanical coupling effect of the effective part is effective; the first bus is located on the first portion, the first gap portion is located on the first failure portion, the overlapping portion is located on the effective portion, the second gap portion is located on the second failure portion, and the second bus is located on the second portion. On the premise of not obviously influencing insertion loss, power tolerance and chip size, high-order nonlinearity, such as cubic nonlinearity, caused by electromechanical coupling outside a resonance area is effectively inhibited. In addition, the failure part extends to the bus, so that gap mode can be effectively inhibited.

This application relates to a surface acoustic wave resonator and a surface acoustic wave filter, including an interdigital transducer, which includes a first busbar, and first electrode fingers and first dummy electrode fingers alternately arranged and connected to the first busbar; a second busbar, and second electrode fingers and second dummy electrode fingers alternately arranged and connected to the second busbar. A first gap is provided between the first electrode finger and the second dummy electrode. A second gap is provided between the second electrode finger and the first dummy electrode finger. Each first gap is arranged along a first direction. Each second gap is arranged along a second direction. An angle between the first direction and a third direction is different from that between the second direction and the third direction. By setting the angle between the first and third direction to be different from that between the second and third direction in this application, lateral energy leakage in surface acoustic waves can be blocked, transverse mode ripples in the surface acoustic waves can be suppressed, and electrical performance can be improved.

Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of IDT electrodes, the first thickness being different from the second thickness.

This application discloses a surface acoustic wave (SAW) resonator, filter, and electronic device, belonging to the field of semiconductor technology. The SAW resonator includes: a piezoelectric layer; an interdigital transducer located on one side of the piezoelectric layer along its thickness direction; and a reflective structure, wherein the interdigital transducer has reflective structures on opposite sides along a second direction, and at least a portion of the reflective structure on at least one side of the interdigital transducer along the second direction is a groove structure located within the piezoelectric layer; the thickness direction, the first direction, and the second direction are perpendicular to each other; wherein the groove structure has a first groove wall corresponding to the active region and at least a portion of a second groove wall corresponding to the passive region on the side near the interdigital transducer, the first groove wall extending along the first direction, and the second groove wall connected to the first groove wall and inclined in a direction away from the interdigital transducer. This application can reduce the size of the resonator, reduce interference to other resonators, and suppress stray modes within the resonator.

The utility model relates to the technical field of sensors, in particular to a miniature passive wireless sensor applied to temperature measurement of a high-speed motor rotor, which comprises a temperature sensing unit, a flexible connecting unit and a transmitting unit, and is characterized in that the temperature sensing unit comprises a surface acoustic wave resonator chip, a matching element and a temperature sensing end welding point; the transmitting unit comprises a spiral antenna unit, a fixed base and a transmitting end welding point. A first shielding layer, a second shielding layer and a third shielding layer are arranged, the first shielding layer and the second shielding layer which are good in conductivity are used for manufacturing a shielding cover and the like to surround an emission unit, a high-frequency magnetic field generates induction current on the surface of a metal shielding body, and a reverse magnetic field generated by the current can counteract part of an external magnetic field; and the first shielding layer is made of a permalloy plate, has high magnetic conductivity and can guide magnetic field lines to pass through the shielding layer, so that the magnetic field intensity of the space where the internal emission unit is located is greatly reduced.

The application relates to the technical field of semiconductors, in particular to a surface acoustic wave resonator and a surface acoustic wave filter, wherein the surface acoustic wave resonator comprises a piezoelectric layer, the surface of the piezoelectric layer is provided with an active transducing unit and a reflecting unit; two first bus bars are arranged at intervals on the active transducing unit, and two second bus bars are arranged at intervals on the reflecting unit; a first interval region formed by the projection of the two first bus bars along a first direction covers a second interval region formed by the projection of the two second bus bars along the first direction, and the length of the first interval region along a second direction is greater than the length of the second interval region along the second direction, so that the winding distance of the first bus bar when connected with an external circuit is reduced, the space occupation is reduced, the resonator layout is more compact, and the core demand of high-density integration of devices in the semiconductor field is met.

The invention discloses a surface acoustic wave resonator for suppressing a parasitic mode. The surface acoustic wave resonator comprises an input electrode and an output electrode, the split resonators are connected between the input electrode and the output electrode in parallel, and the wavelengths of the split resonators are not equal; the average wavelength of the split resonators is equal to the wavelength of the single resonator, and the total area of the split resonators is equal to the area of the single resonator. According to the surface acoustic wave resonator for suppressing the parasitic mode and the filter thereof, a single resonator is divided into two or more resonators, so that the parasitic effect can be greatly weakened in a filter passband under the condition that the overall electrical performance is ensured to be approximately unchanged.

The invention discloses a temperature compensation type surface acoustic wave resonator. The temperature compensation type surface acoustic wave resonator comprises a piezoelectric substrate, an interdigital transducer and a temperature compensation layer, wherein the interdigital transducer is arranged on the piezoelectric substrate, and the temperature compensation layer is arranged on the piezoelectric substrate and the interdigital transducer. The temperature compensation layer is embedded in the temperature compensation layer, and the high-sound-velocity layer is not in contact with the interdigital transducer.

The embodiment of the invention discloses a surface acoustic wave resonator, a surface acoustic wave filter and a multiplexer. The surface acoustic wave resonator includes: a piezoelectric layer; a conductive layer; the conductive layer comprises a first conductive unit and a second conductive unit; the first conductive unit comprises an interdigital transducer electrode, and a first bus bar and a second bus bar which are arranged at two ends of the interdigital transducer electrode; the interdigital transducer electrode comprises a plurality of first long electrode fingers and a plurality of second long electrode fingers which are alternately arranged in the first direction and extend in the second direction. Wherein in the second direction, at least one pair of adjacent first long electrode fingers are in short circuit on the side away from the first bus bar, and the second long electrode finger located between the two short-circuit first long electrode fingers is arranged in a suspended mode to form a suspended finger. The second conductive unit comprises a first reflecting grating and a second reflecting grating. According to the technical scheme, the distance between the resonance point and the anti-resonance point of the resonance unit can be shortened. The surface acoustic wave resonator is applied to a surface acoustic wave filter and can improve pass band edge roll-off.

The invention provides a surface acoustic wave resonator, a filter and electronic equipment, and relates to the technical field of semiconductors. A plurality of first areas arranged at intervals are defined on the side, away from a piezoelectric substrate, of a bus bar, first film layers are correspondingly arranged in the first areas, and the requirement that the sound propagation speed in the first film layers is different from the sound propagation speed in the bus bar is met; the sound velocity of the area where the bus bar corresponding to the first film layer is located is different from the sound velocity of other areas of the bus bar, and sound velocity difference is caused, so that generation of a transverse resonance mode and the coupling effect between the transverse resonance mode and a main mode are restrained, meanwhile, energy dissipation caused by the transverse resonance mode can be restrained, and the purpose of improving the performance of the surface acoustic wave resonator is achieved.

The application discloses a surface acoustic wave resonator with a core-shell cylindrical structure phononic crystal reflector, comprising a first substrate, a second substrate, a third substrate, a piezoelectric layer arranged on the first substrate, an input electrode arranged on the piezoelectric layer, an output electrode and a phononic crystal reflector; the input electrode and the output electrode jointly form an interdigital transducer and are arranged at the center of the upper surface of the piezoelectric layer; the phononic crystal reflector is composed of two phononic crystal arrays, and the two phononic crystal arrays are symmetrically arranged on the two sides of the interdigital transducer. On the basis of the multilayer substrate structure resonator, the traditional metal reflector is replaced by the phononic crystal, so that the reflection efficiency of the surface acoustic wave resonator is improved, and the SAW resonator with high quality factor is designed.

An acoustic wave filter package with a surface acoustic wave resonator having a capacitor coupled in parallel with the surface acoustic wave resonator. The capacitor results in a shifted anti-resonant frequency.

The invention belongs to the field of piezoelectric acoustic wave devices, and particularly relates to an acoustic surface wave resonator of an LN-POI multilayer structure. The resonator comprises an interdigital electrode layer, a piezoelectric layer, an oxide buried layer, a polycrystalline silicon layer and a substrate which are stacked from top to bottom, the interdigital electrode layer is composed of a first bus bar, a second bus bar and electrode finger bars connected to the inner sides of the two bus bars. The electrode finger strips connected with the same bus bar are parallel, and all the electrode finger strips and the bus bar form an inclination angle of 20-25 degrees; the large electromechanical coupling coefficient and the working frequency of the resonator are improved, the transverse mode can be suppressed, and the performance of the resonator is improved.

A surface-acoustic-wave (SAW) resonator includes a substrate formed from an anisotropic crystal and first and second acoustic reflectors disposed on a surface of the substrate. The first and second acoustic reflectors face each other to form an acoustic cavity whose axis is aligned with a crystallographic orientation of the anisotropic crystal such that the SAW resonator is minimally diffracting at cryogenic temperatures. The substrate may be a piezoelectric crystal, in which case the acoustic cavity can be excited by driving electrodes located on the surface of the substrate. Since the SAW resonator is minimally diffracting, it has less loss, and therefore can achieve higher Qs, than SAW resonators based on other crystallographic orientations.

A surface acoustic wave resonator (1) includes at least one electrode (4) disposed on a substrate (3) and including an IDT electrode (41), and a plurality of load members (51) disposed separately from each other on or in the substrate (3) and composed of a dielectric, each of the plurality of load members (51) at least partially overlapping at least one electrode finger in a plan view of the substrate (3), the number of electrode fingers overlapping the plurality of load members (51) disposed in a first sub-region (3b1) and the number of electrode fingers overlapping the plurality of load members (51) disposed in a third sub-region (3b3) are each greater than the number of electrode fingers overlapping the plurality of load members (51) disposed in a second sub-region (3b2), and the plurality of load members (51) include two or more load members (51) overlapping the electrode fingers disposed in the first sub-region (3b1) and two or more load members (51) overlapping the electrode fingers disposed in the third sub-region (3b3).