261 results about "Surface acoustic wave resonators" patented technology

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

The invention relates to the technical field of fault detection, in particular to a high-voltage connector loosening fault detection method and device and an automobile, and the method comprises the following steps: forming a surface acoustic wave resonator array based on an interdigital transducer array, an acoustic wave resonator and a flexible waveguide; butting a signal source radio frequency cable with the pin interdigital electrode chip, triggering data acquisition, performing Fourier transform on original data, and judging the loosening risk of the connector according to each parameter threshold value; carrying out three-dimensional modeling on the connector plugging interface, carrying out modal analysis on the model, and obtaining surface acoustic wave frequencies, group velocities and phase distribution under different pre-tightening forces so as to identify a contact force abnormal region; based on a multi-stage early warning mechanism, rapid locking is achieved through electrorheological fluid, and displacement is finely adjusted through a magnetostrictive rod. According to the invention, the loosening hidden danger can be quickly and accurately locked, a tight protection system is constructed by multi-stage early warning and mechanical self-locking, and the loosening risk of the high-voltage connector can be greatly reduced from early warning to active intervention.

A multimode longitudinally coupled surface acoustic wave resonator is disclosed. The multimode longitudinally coupled surface acoustic wave resonator can include a first interdigital transducer electrode that is positioned over a piezoelectric layer. The first interdigital transducer electrode includes fingers having a first pitch. The multimode longitudinally coupled surface acoustic wave resonator can also include first and second sets of reflectors that are positioned over the piezoelectric layer. The first and second sets of reflectors include a first number of reflectors having a second pitch and a second number of reflectors having a third pitch, respectively. The first pitch is greater than the second pitch. The multimode longitudinally coupled surface acoustic wave resonator can further include a second interdigital transducer electrode that is positioned over the piezoelectric layer and between the first interdigital transducer electrode and the first set of reflectors. The second interdigital transducer electrode includes fingers having a fourth pitch.

A surface acoustic wave resonator device and method for manufacturing the same, and a surface acoustic wave filter, the surface acoustic wave resonator device includes: a first temperature compensation layer and an interdigital electrode structure, disposed on a base substrate, the interdigital electrode structure is at least partially embedded in the first temperature compensation layer, and includes interdigital electrodes extending along a first direction and arranged along a second direction; and a second temperature compensation layer, located on a side of the first temperature compensation layer and the interdigital electrode structure away from the base substrate; the interdigital electrode structure is surrounded and wrapped by the first temperature compensation layer in a direction parallel to the base substrate, and a surface of the interdigital electrode structure at a side away from the base substrate is covered by and in contact with the second temperature compensation layer.

The invention discloses a surface acoustic wave resonator and a filter. The surface acoustic wave resonator comprises a piezoelectric layer; the electrode layer is arranged on the piezoelectric layer; the electrode layer comprises an interdigital transducer; the interdigital transducer comprises two interdigital electrodes which are oppositely arranged in a first direction; each interdigital electrode comprises a bus bar, a plurality of interdigital strips which are connected with the bus bar, extend in the first direction and are arranged in the second direction, and a plurality of sinking false fingers which are positioned on one side, far away from the bus bar, of each interdigital strip and extend in the first direction; the first direction intersects with the second direction; and each sinking false finger sinks into the piezoelectric layer. According to the technical scheme, clutters of a transverse mode can be effectively restrained, meanwhile, the process steps are simplified, and device miniaturization is facilitated.

The invention discloses a surface acoustic wave resonator, a filter and electronic equipment, and relates to the technical field of radio frequency, compared with an interdigital transducer in an existing surface acoustic wave resonator which is located on the surface, away from a substrate, of a piezoelectric layer, the surface acoustic wave resonator is characterized in that at least part of electrode fingers of the interdigital transducer are embedded into the piezoelectric layer; the depth of the portion, embedded into the piezoelectric layer, of the interdigital transducer is not smaller than 0.02 lambda, and lambda is the wavelength of sound waves transmitted in the surface acoustic wave resonator, so that on one hand, the piezoelectric layer can achieve efficient conversion of electric energy and mechanical energy through the piezoelectric effect, and energy loss is reduced; and on the other hand, the piezoelectric layer and the interdigital transducer are combined more stably, so that stray waves of the surface acoustic wave resonator can be effectively inhibited, in-band stray of the surface acoustic wave resonator is obviously weakened, the Q value of the resonator is further improved, and the performance of the surface acoustic wave resonator is comprehensively improved.

The invention discloses a surface acoustic wave resonator and an electronic device, which are applied to the technical field of surface acoustic waves, an interdigital transducer comprises two outer-layer bus bars arranged oppositely and at least two inner-layer bus bars arranged oppositely, the inner-layer bus bars are arranged between the outer-layer bus bars, and the outer-layer bus bars and the inner-layer bus bars are both parallel to the length direction; the inner-layer bus bar is provided with a plurality of first protruding parts protruding out of the edge of the inner-layer bus bar in the width direction, the first protruding parts are arranged in the length direction, so that an inner-layer edge sound velocity area is formed on at least one side of the inner-layer bus bar based on the first protruding parts, and an inner-layer sound velocity area is formed on the basis of the inner-layer bus bar; the sound velocity of the inner-layer edge sound velocity area is smaller than that of the inner-layer sound velocity area. The sawtooth structure formed by the plurality of first protruding parts can enable sound waves to generate diffuse reflection during transverse propagation, so that the Q value of a transverse clutter mode is reduced, and the generation of a transverse mode is effectively inhibited.

The invention discloses a surface acoustic wave resonator and a filter. The surface acoustic wave resonator comprises a substrate; the interdigital transducer is positioned on one side of the substrate; the reflecting grating and the interdigital transducer are arranged on the same layer, and the reflecting grating is located on the two sides of the interdigital transducer in the first direction; the plurality of reflecting gratings are arranged along a first direction and extend along a second direction; in the first direction, a reflecting grating gap is formed between any two adjacent reflecting gratings; the first direction and the second direction intersect and are parallel to the plane where the substrate is located; the orthographic projection of the acoustic impedance structure on the plane where the substrate is located is at least overlapped with the orthographic projection of the reflecting grating gap on the plane where the substrate is located; the acoustic impedance of the acoustic impedance structure is different from the acoustic impedance of the reflecting grating. By adopting the technical means, the acoustic impedance structure is arranged, and the acoustic impedance of the acoustic impedance structure is different from that of the reflecting grating, so that a stray mode in the resonator can be inhibited, and the performance of the surface acoustic wave resonator is further improved.

Aspects and embodiments disclosed herein include a surface acoustic wave resonator comprising a multilayer piezoelectric substrate and interdigital transducer (IDT) electrodes disposed on an upper surface of the multilayer piezoelectric substrate, the IDT electrodes having at least partially rounded upper sides.

The embodiment of the invention provides a surface acoustic wave resonator, a filter, a radio frequency front-end module and electronic equipment, relates to the technical field of radio frequency, and is used for improving the suppression effect on a miscellaneous mode in the SAW filter. The surface acoustic wave resonator comprises a substrate, and a low-sound-velocity layer, a first high-sound-velocity layer, a piezoelectric layer and an interdigital electrode which are arranged on the same side of the substrate. And the material of the piezoelectric layer comprises LiNbO3 single crystals. The first high-sound-velocity layer is arranged on the side, away from the substrate, of the low-sound-velocity layer, the piezoelectric layer is arranged on the side, away from the substrate, of the first high-sound-velocity layer, and the interdigital electrode is arranged on the side, away from the substrate, of the piezoelectric layer. The first high-sound-velocity layer is arranged between the low-sound-velocity layer and the piezoelectric layer, so that the intensity of a rayleigh mode on the low-frequency side of a main mode in the surface acoustic wave resonator can be effectively inhibited.

The present disclosure provides a multi-coefficient coupled-mode surface acoustic wave resonator and a manufacturing method therefor. During operation of the surface acoustic wave resonator, at least two different piezoelectric coefficients are coupled and jointly excite acoustic waves. The multi-coefficient coupled-mode surface acoustic wave resonator comprises: a substrate; a piezoelectric layer, provided on the substrate; an electrode unit, provided on the surface of the piezoelectric layer and comprising at least one interdigital electrode pair; and a reflective grating unit, comprising at least two grating structures which are symmetrically arranged on the two sides of the electrode unit, wherein the equivalent density of the electrode unit is greater than 4000kg / m3. The electric field distribution is changed by changing the mass loading effect of the interdigital electrode pair and the ratio of the electrode wavelength to the thickness of the piezoelectric layer, such that at least two piezoelectric coefficients are mutually coupled to jointly excite acoustic waves, thus achieving the surface acoustic wave resonator having an electromechanical coupling coefficient exceeding 25%.

This surface acoustic wave resonator (1) comprises: at least one electrode (4) disposed on a substrate (3) and including an IDT electrode (41); and a plurality of load members (51) that are disposed on or in the substrate (3), are spaced apart from each other, and are composed of a dielectric material. Each of the plurality of load members (51) at least partially overlaps at least one corresponding electrode finger in a planar view of the substrate (3). The number of electrode fingers that overlap the plurality of load members (51) among the electrode fingers disposed in a first sub-region (3b1) and the number of electrode fingers that overlap the plurality of load members (51) among the electrode fingers disposed in a third sub-region (3b3) are each greater than the number of electrode fingers that overlap the plurality of load members (51) among the electrode fingers disposed in a second sub-region (3b2). The plurality of load members (51) include two or more load members (51) that overlap the electrode fingers disposed in the first sub-region (3b1) and two or more load members (51) that overlap the electrode fingers disposed in the third sub-region (3b3).

A surface acoustic wave resonator device and manufacturing method thereof, the surface acoustic wave resonator device has an interdigital electrode region including a first peripheral region, a first end region, a central region, a second end region and a second peripheral region, and includes: an interdigital transducer, disposed on a piezoelectric substrate and including interdigital electrodes located in the interdigital electrode region; an intermediate layer, disposed on the piezoelectric substrate and covering the interdigital transducer; an acoustic velocity adjusting layer, disposed on a side of at least a portion of the intermediate layer away from the piezoelectric substrate; and a passivation layer, disposed on a side of the intermediate layer away from the piezoelectric substrate, wherein the acoustic velocity adjusting layer is located in the central region, overlaps with portions of the interdigital electrodes located in the central region in a direction perpendicular to the piezoelectric substrate.

The invention relates to a particle sorting device and method.The device comprises a micro-channel, a bulk acoustic wave device and two first surface acoustic wave resonators, the two first surface acoustic wave resonators are located outside the micro-channel and used for generating standing waves with two wave nodes in the micro-channel, and the positions of the two wave nodes are the same as the positions of acoustic fluid tunnels on the two side edges of the bulk acoustic wave device; the effect of capturing particles by the acoustic fluid tunnels on the two side edges is enhanced; the two second surface acoustic wave resonators are positioned outside the micro-channel at the downstream of the bulk acoustic wave device and are used for generating a standing wave with a node in the micro-channel so as to move a part of particles released at the tail end of the bulk acoustic wave device to the position of the node; the particles which are released at the tail end of the bulk acoustic wave device and are not moved to the node positions generated by the two second surface acoustic wave resonators flow to the first sub-flow channel, and the particles which are released at the tail end of the bulk acoustic wave device and are moved to the node positions generated by the two second surface acoustic wave resonators flow to the second sub-flow channel. The sorting performance of the particles can be improved.

The invention discloses a filter circuit topological structure, a radio frequency module and electronic equipment, and relates to the field of filters, and the filter circuit topological structure comprises an input end and an output end; the N + 1 series resonator units are sequentially connected between the input end and the output end, and the first series resonator unit to the N + 1 series resonator unit are sequentially arranged on a series path from the input end to the output end; an ith parallel node is arranged between the ith series resonator unit and the (i + 1) th series resonator unit; the N parallel resonator units are sequentially a first parallel resonator unit to an Nth parallel resonator unit; the ith parallel node is connected with the grounding end through the ith parallel resonator unit, N is a positive integer, and i is a positive integer not greater than N; at least one of the first to Nth parallel resonator units is a first resonator unit including a plurality of surface acoustic wave resonators connected in parallel between a corresponding parallel node and a ground terminal.

The invention relates to a surface acoustic wave resonator, a filter, a multiplexer and a radio frequency front-end module. In the surface acoustic wave resonator, at least one of the reflection structures of the surface acoustic wave resonator is modulated, so that the distance between the center lines of the two adjacent reflection electrodes in the reflection structures fluctuates by taking the reflection group as the unit, thereby inhibiting the fluctuation near the upper frequency point of the surface acoustic wave resonator, and improving the performance of the resonator. Besides, the filter provided by the embodiment of the invention comprises the surface acoustic wave resonator, so that the passband performance of the filter can be improved, and particularly, the passband flatness and the out-of-band rejection level can be improved.

The invention discloses a staggered thickness type surface acoustic wave resonator, a filter and a manufacturing method thereof, and relates to the technical field of resonators / filters, the resonator comprises a substrate, a first electrode finger film layer and a second electrode finger film layer, the first electrode finger film layer is arranged on the substrate, one part of the second electrode finger film layer is arranged on the substrate, and the other part of the second electrode finger film layer is arranged on the substrate. The other part covers the first electrode finger film layer to form an overlapping area, and the first electrode finger film layer, the second electrode finger film layer and the overlapping area form a grid structure with the thickness changing in a staggered mode; according to the resonator, the filter and the manufacturing method thereof, the formed staggered grid structure forms different sound velocity regions between the interdigital electrode region and the bus bar, the propagation of a transverse mode is influenced, the transverse mode suppression effect is improved, the structure avoids the problem of large impedance caused by a thin metal film layer, and the performance of the resonator is improved. And a device with high resonant frequency has normal performance.

The present invention relates to the field microelectronic devices, and in particular to a surface acoustic wave resonator and a manufacturing method therefor, and a filter. The surface acoustic wave resonator comprises a support substrate, a functional layer, and an interdigital transducer which are sequentially arranged from bottom to top; the functional layer comprises a first dielectric region, a piezoelectric region, and a second dielectric region which are sequentially arranged in the first direction; a piezoelectric layer and a bottom electrode are arranged in an aperture region of the interdigital transducer, the width of the piezoelectric layer and the bottom electrode can be less than or equal to the width of the aperture region, the aperture region is a region where two types of oppositely arranged interdigital electrodes in the interdigital transducer are interlaced, and a target mode of the surface acoustic wave resonator is a high-order surface acoustic wave mode excited by a longitudinal electric field; and the product of the distance between adjacent first interdigital electrodes and the frequency of the target mode is less than the speed of sound of the support substrate, thereby avoiding parasitic bulk acoustic waves generated by excitation of the longitudinal electric field, and facilitating suppression of a transverse high-order mode.

The invention discloses a surface acoustic wave resonator and a filter. The resonator comprises an interdigital transducer arranged on a piezoelectric substrate, reflecting gratings located on the two sides of the interdigital transducer and at least one laminated protection structure arranged in the outer side area of the reflecting gratings. The laminated protection structure comprises an interdigital capacitor arranged on the surface of the piezoelectric substrate and an organic material layer covering the interdigital capacitor; two bus bars of the interdigital capacitor are electrically connected with two signal ports of the resonator respectively, and the interdigital capacitor is connected with the interdigital transducer in parallel. According to the invention, the anti-ESD capability of the resonator can be effectively improved under the condition of not increasing additional process steps and not changing the electrode structure of the normal working area of the resonator.

A surface acoustic wave resonator device, manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, located on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes extending along a first direction and alternately arranged along a second direction, the first interdigital electrode is connected to the first interdigital electrode lead-out part, and the second interdigital electrode is connected to the second interdigital electrode lead-out part; and a clutter suppression structure, including a body structure and a sawtooth structure, wherein the body structure continuously extends along the second direction and overlaps with the interdigital electrodes in a third direction, and the sawtooth structure is disposed at a side of the body structure in the first direction, and at least a portion of the sawtooth structure overlaps with the interdigital electrodes in the third direction.

The present application relates to bolt state monitoring technical field, disclose a kind of embedded wireless passive bolt tightness state monitoring method based on surface acoustic wave technology, specifically includes the following steps: based on the real-time acquisition frequency drift amount of surface acoustic wave resonator, and the looseness risk of bolt is judged in real time, generates looseness warning signal and safety signal;Based on warning signal, the frequency drift amount before generating warning signal is analyzed at change rate, and the change rate degree is judged;Based on the change rate degree judging result, the time point when frequency drift amount reaches frequency drift amount risk value is predicted.The present application can judge bolt looseness risk in real time, generates warning signal in time when bolt appears looseness sign, reminds relevant personnel to pay attention to bolt state, avoid bolt looseness further development and not be perceived, to reduce the possibility of equipment failure, accident.

The application provides a manufacturing method of a surface acoustic wave resonator and the surface acoustic wave resonator, and the manufacturing method comprises the following steps: providing a substrate; forming a plurality of interdigital electrode grooves and mass block grooves on the substrate, at least one mass block groove in communication with the interdigital electrode groove is arranged on each interdigital electrode groove; and arranging metal material in the interdigital electrode groove and the mass block groove to integrally form an interdigital electrode and a mass block. By forming a plurality of interdigital electrode grooves and mass block grooves on the substrate first, and then arranging metal material in the interdigital electrode groove and the mass block groove to integrally form an interdigital electrode and a mass block, the interdigital electrode and the mass block are formed simultaneously through one step, the processing steps are reduced, the production efficiency is improved, there is no separated interface between the integrally formed interdigital electrode and the mass block, the suppression effect of the mass block on the second harmonic wave can be ensured, the stability of the surface acoustic wave resonator is improved, and the product yield is ensured.