387 results about "Surface acoustic wave resonators" patented technology

The invention discloses a surface acoustic wave resonator and a filter, and the resonator comprises an interdigital structure which comprises a first interdigital region and a second interdigital region; the first interdigital area comprises a plurality of first finger strips, and the second interdigital area comprises a plurality of second finger strips; the reflecting gratings are arranged on the two sides of the interdigital structure in the first direction, and the reflecting gratings, the first finger strips and the second finger strips are located on the same plane; the reflecting grating and the plurality of first finger strips are vertically crossed with each other, and the reflecting grating and the plurality of second finger strips are vertically crossed with each other; in the first direction, each first finger strip and each second finger strip are oppositely arranged, and a gap is formed between each first finger strip and the corresponding second finger strip; in the second direction, the multiple first finger strips are arranged in parallel, and the multiple second finger strips are arranged in parallel; the first direction is perpendicular to the second direction. According to the invention, the leakage of transverse energy in the first direction can be reduced, and the high-order stray mode of the surface acoustic wave resonator in the first direction and the second direction can be suppressed.

Aspects of this disclosure relate to acoustic wave filter. The acoustic wave filter can include different types of acoustic wave resonators. The acoustic wave filter can include shunt acoustic wave resonator that has lower second harmonic distortion than other acoustic wave resonators of the acoustic wave filter. In certain embodiments, the shunt acoustic wave resonator can be a surface acoustic wave resonator. Related multiplexers, radio frequency modules, wireless communication devices, and methods are also disclosed.

The invention relates to the technical field of surface acoustic wave devices, and discloses a lithium tantalate single crystal film-based Loff wave photonic crystal resonator, which comprises a functional substrate and a piezoelectric film layer on the upper surface of the functional substrate, an interdigital transducer is arranged in the middle area of the upper surface of the piezoelectric film layer, and photonic crystals are arranged on the two sides of the interdigital transducer; the piezoelectric thin film layer is a lithium tantalate single crystal thin film, and the tangential direction of the lithium tantalate single crystal thin film is any one of Y cuts, including 0-degree Y, 36-degree Y, 42-degree Y, 50-degree Y, 64-degree Y and 128-degree Y cuts. The photonic crystal is used for replacing a reflecting grating in a traditional surface acoustic wave resonator, higher sound velocity and lower longitudinal loss are achieved through a material system constructed by combining the functional substrate and the lithium tantalate single crystal film, and the photonic crystal resonator has the advantages of being simple in structure, small in size and easy to prepare and integrate. And compared with a Bragg reflection grating resonator with the same size, the resonator has a higher Q value.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

The invention relates to the technical field of fault detection, in particular to a high-voltage connector loosening fault detection method and device and an automobile, and the method comprises the following steps: forming a surface acoustic wave resonator array based on an interdigital transducer array, an acoustic wave resonator and a flexible waveguide; butting a signal source radio frequency cable with the pin interdigital electrode chip, triggering data acquisition, performing Fourier transform on original data, and judging the loosening risk of the connector according to each parameter threshold value; carrying out three-dimensional modeling on the connector plugging interface, carrying out modal analysis on the model, and obtaining surface acoustic wave frequencies, group velocities and phase distribution under different pre-tightening forces so as to identify a contact force abnormal region; based on a multi-stage early warning mechanism, rapid locking is achieved through electrorheological fluid, and displacement is finely adjusted through a magnetostrictive rod. According to the invention, the loosening hidden danger can be quickly and accurately locked, a tight protection system is constructed by multi-stage early warning and mechanical self-locking, and the loosening risk of the high-voltage connector can be greatly reduced from early warning to active intervention.

The invention provides a manufacturing method of a temperature compensation type surface acoustic wave resonator. The manufacturing method comprises the following steps: providing a substrate; manufacturing an interdigital transducer on the surface of one side of the substrate; the interdigital transducer comprises a bus bar and a plurality of long-finger electrodes; manufacturing a first load structure on one side, far away from the substrate, of the long-finger electrode; manufacturing a second load structure on one side, far away from the long-finger electrode, of the first load structure; etching the second load structure to form at least one hollow area and a metal wire at the periphery of the hollow area; and a temperature compensation layer is manufactured on the surface of one side, far away from the long-finger electrode, of the interdigital transducer. By arranging the first load structure, the propagation speed of the surface acoustic wave can be changed, so that the transverse mode can be inhibited, and the Q value of the temperature compensation type surface acoustic wave resonator is improved. According to the invention, the second load structure comprising at least one hollow area is arranged, so that a heat conduction channel is enlarged, the heat dissipation capability of the resonator can be improved on the premise of miniaturization, and the power resistance capability of the filter is improved.

Provided in the present invention are a surface acoustic wave resonator and a manufacturing method therefor. An interdigital transducer comprises a plurality of interdigital electrodes and two busbar groups connected to the interdigital electrodes. In each busbar group, a busbar close to an interdigital electrode is arranged at an angle relative to the normal direction of the interdigital electrode, thereby enabling the lateral mode to be inhibited. Furthermore, one end of the interdigital electrode is provided with a mass block, thereby enabling the sound velocity at the end of the interdigital electrode to be reduced. Furthermore, each busbar group comprises at least two busbars, and adjacent busbars are connected, so that energy can be limited in a resonant cavity, inhibiting energy leakage, ultimately resulting in a significant increase in the quality factor.

A multimode longitudinally coupled surface acoustic wave resonator is disclosed. The multimode longitudinally coupled surface acoustic wave resonator can include a first interdigital transducer electrode that is positioned over a piezoelectric layer. The first interdigital transducer electrode includes fingers having a first pitch. The multimode longitudinally coupled surface acoustic wave resonator can also include first and second sets of reflectors that are positioned over the piezoelectric layer. The first and second sets of reflectors include a first number of reflectors having a second pitch and a second number of reflectors having a third pitch, respectively. The first pitch is greater than the second pitch. The multimode longitudinally coupled surface acoustic wave resonator can further include a second interdigital transducer electrode that is positioned over the piezoelectric layer and between the first interdigital transducer electrode and the first set of reflectors. The second interdigital transducer electrode includes fingers having a fourth pitch.

A surface acoustic wave resonator device and method for manufacturing the same, and a surface acoustic wave filter, the surface acoustic wave resonator device includes: a first temperature compensation layer and an interdigital electrode structure, disposed on a base substrate, the interdigital electrode structure is at least partially embedded in the first temperature compensation layer, and includes interdigital electrodes extending along a first direction and arranged along a second direction; and a second temperature compensation layer, located on a side of the first temperature compensation layer and the interdigital electrode structure away from the base substrate; the interdigital electrode structure is surrounded and wrapped by the first temperature compensation layer in a direction parallel to the base substrate, and a surface of the interdigital electrode structure at a side away from the base substrate is covered by and in contact with the second temperature compensation layer.

The invention discloses a surface acoustic wave resonator and a filter. The surface acoustic wave resonator comprises a piezoelectric layer; the electrode layer is arranged on the piezoelectric layer; the electrode layer comprises an interdigital transducer; the interdigital transducer comprises two interdigital electrodes which are oppositely arranged in a first direction; each interdigital electrode comprises a bus bar, a plurality of interdigital strips which are connected with the bus bar, extend in the first direction and are arranged in the second direction, and a plurality of sinking false fingers which are positioned on one side, far away from the bus bar, of each interdigital strip and extend in the first direction; the first direction intersects with the second direction; and each sinking false finger sinks into the piezoelectric layer. According to the technical scheme, clutters of a transverse mode can be effectively restrained, meanwhile, the process steps are simplified, and device miniaturization is facilitated.

The invention discloses a surface acoustic wave resonator, a filter and electronic equipment, and relates to the technical field of radio frequency, compared with an interdigital transducer in an existing surface acoustic wave resonator which is located on the surface, away from a substrate, of a piezoelectric layer, the surface acoustic wave resonator is characterized in that at least part of electrode fingers of the interdigital transducer are embedded into the piezoelectric layer; the depth of the portion, embedded into the piezoelectric layer, of the interdigital transducer is not smaller than 0.02 lambda, and lambda is the wavelength of sound waves transmitted in the surface acoustic wave resonator, so that on one hand, the piezoelectric layer can achieve efficient conversion of electric energy and mechanical energy through the piezoelectric effect, and energy loss is reduced; and on the other hand, the piezoelectric layer and the interdigital transducer are combined more stably, so that stray waves of the surface acoustic wave resonator can be effectively inhibited, in-band stray of the surface acoustic wave resonator is obviously weakened, the Q value of the resonator is further improved, and the performance of the surface acoustic wave resonator is comprehensively improved.

The invention provides a rapid intelligent design method and system for a surface acoustic wave filter, and the method comprises the steps: building a physical model of a surface acoustic wave resonator based on electromagnetic simulation software, carrying out the calculation to obtain a corresponding admittance response, and obtaining a series of surface acoustic wave resonator admittance responses and key structure parameters for constructing a target surface acoustic wave filter; preprocessing the collected sample data set to form an input vector of a deep learning model; constructing a reversely designed neural network model, learning a mapping relation between structure parameters and admittance response, and predicting the structure parameters of the serial and parallel surface acoustic wave resonators; and in combination with a COM model, the admittance of the series resonator and the admittance of the parallel resonator are converted into an S matrix, so that a filtering passband is obtained. According to the method, the problems of high calculation cost and accuracy caused by complex acoustic characteristics and material parameters are avoided, the defects that a traditional numerical simulation method is time-consuming, tedious and complex in circuit topology process are overcome, and the rapid and intelligent design requirement of the surface acoustic wave filter is met.

The invention discloses a surface acoustic wave resonator and an electronic device, which are applied to the technical field of surface acoustic waves, an interdigital transducer comprises two outer-layer bus bars arranged oppositely and at least two inner-layer bus bars arranged oppositely, the inner-layer bus bars are arranged between the outer-layer bus bars, and the outer-layer bus bars and the inner-layer bus bars are both parallel to the length direction; the inner-layer bus bar is provided with a plurality of first protruding parts protruding out of the edge of the inner-layer bus bar in the width direction, the first protruding parts are arranged in the length direction, so that an inner-layer edge sound velocity area is formed on at least one side of the inner-layer bus bar based on the first protruding parts, and an inner-layer sound velocity area is formed on the basis of the inner-layer bus bar; the sound velocity of the inner-layer edge sound velocity area is smaller than that of the inner-layer sound velocity area. The sawtooth structure formed by the plurality of first protruding parts can enable sound waves to generate diffuse reflection during transverse propagation, so that the Q value of a transverse clutter mode is reduced, and the generation of a transverse mode is effectively inhibited.

The invention provides a surface acoustic wave resonator and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and forming a piezoelectric layer on the surface of the substrate; an interdigital transducer is formed on the piezoelectric layer, the interdigital transducer comprises a first finger electrode and a second finger electrode which are arranged in a crossed mode, each of the first finger electrode and the second finger electrode comprises a bus bar and a plurality of electrode fingers connected with the bus bar, and the electrode fingers are arranged at intervals in the first direction; forming a temperature compensation layer with a predetermined target thickness to cover the surface of the interdigital transducer; and finishing the thickness of the temperature compensation layer to adjust the frequency of the surface acoustic wave resonator. According to the method, after the temperature compensation layer is formed, the thickness of the temperature compensation layer is trimmed, so that the purpose of frequency modulation is achieved, and the method is high in reliability.

The invention provides a temperature compensation type surface acoustic wave resonator, a temperature compensation type surface acoustic wave filter and a manufacturing method of the temperature compensation type surface acoustic wave resonator. The resonator comprises a substrate, an interdigital transducer, a reflecting grating region, a first load structure, a second load structure and a temperature compensation layer, the interdigital transducer comprises a plurality of long-finger electrodes; the reflecting grating region comprises a plurality of reflecting gratings; the first load structure is arranged on the side, away from the substrate, of the long-finger electrode in the thickness direction, and the orthographic projection of the first load structure on the substrate and the orthographic projection of the long-finger electrode on the substrate are at least partially overlapped; the second load structure is arranged on the side, away from the substrate, of the reflecting grating in the thickness direction, and the orthographic projection of the second load structure on the substrate and the orthographic projection of the reflecting grating on the substrate are at least partially overlapped. By arranging the first load structure and the second load structure, the acting force of the long finger electrode and the reflecting grating on the substrate can be increased, the propagation speed of the surface acoustic wave can be changed, the transverse mode clutter can be inhibited, and the Q value of the temperature compensation type surface acoustic wave resonator can be improved.

The invention discloses a surface acoustic wave resonator and a filter. The surface acoustic wave resonator comprises a substrate; the interdigital transducer is positioned on one side of the substrate; the reflecting grating and the interdigital transducer are arranged on the same layer, and the reflecting grating is located on the two sides of the interdigital transducer in the first direction; the plurality of reflecting gratings are arranged along a first direction and extend along a second direction; in the first direction, a reflecting grating gap is formed between any two adjacent reflecting gratings; the first direction and the second direction intersect and are parallel to the plane where the substrate is located; the orthographic projection of the acoustic impedance structure on the plane where the substrate is located is at least overlapped with the orthographic projection of the reflecting grating gap on the plane where the substrate is located; the acoustic impedance of the acoustic impedance structure is different from the acoustic impedance of the reflecting grating. By adopting the technical means, the acoustic impedance structure is arranged, and the acoustic impedance of the acoustic impedance structure is different from that of the reflecting grating, so that a stray mode in the resonator can be inhibited, and the performance of the surface acoustic wave resonator is further improved.

A surface acoustic wave resonator, a filter, a manufacturing method thereof and a communication device. The surface acoustic wave resonator includes a piezoelectric material layer, an interdigital transducer and a dielectric layer; the interdigital transducer is located at a side of the piezoelectric material layer, and the dielectric layer is located between the interdigital transducer and the piezoelectric material layer. Therefore, the surface acoustic wave resonator can reduce the electromechanical coupling coefficient of the surface acoustic wave resonator by arranging the dielectric layer between the interdigital transducer and the piezoelectric material layer. In addition, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by controlling the thickness of the dielectric layer.

The invention discloses a surface acoustic wave resonator, a filter and electronic equipment, and relates to the technical field of radio frequency, on the basis that at least one of two oppositely arranged bus bars is inclined relative to a main acoustic mode propagation direction to suppress a transverse spurious mode, a silicon dioxide laminated layer is arranged between a substrate and a piezoelectric layer, and the piezoelectric layer is arranged between the substrate and the piezoelectric layer; the silicon dioxide laminated layer comprises at least two silicon dioxide layers, and any two adjacent silicon dioxide layers have different densities, so that any two adjacent silicon dioxide layers with different densities form a sound velocity gradient by utilizing different sound velocities of the silicon dioxide layers with different densities, energy is better limited in the piezoelectric layer, the Q value of the resonator is improved, and the dielectric constant of the resonator is improved. The transverse stray mode of the surface acoustic wave resonator is effectively suppressed, the Q value of the resonator is improved, and the insertion loss of a communication system is reduced.

The invention discloses a surface acoustic wave filter capable of reducing spurious signals, and the surface acoustic wave filter employs an impedance element structure, and is a single-ended input / output structure. The surface acoustic wave filter comprises a plurality of surface acoustic wave resonators, and the plurality of surface acoustic wave resonators are connected together in series and in parallel at the same time. And the Rayleigh wave resonant frequency of one surface acoustic wave resonator in the two surface acoustic wave resonators at the symmetrical positions is equal to the Rayleigh wave anti-resonant frequency of the other surface acoustic wave resonator. According to the invention, the half wavelengths of the two parallel resonators at the symmetrical positions are finely tuned, so that the frequencies of the two resonators are finely tuned and staggered, the frequency of one resonator just falls on the anti-resonator frequency of the other resonator, and spurious parasitic signals are effectively suppressed through positive and negative superposition. Therefore, the low-end out-of-band rejection of the surface acoustic wave filter is improved.

Aspects and embodiments disclosed herein include a surface acoustic wave resonator comprising a multilayer piezoelectric substrate and interdigital transducer (IDT) electrodes disposed on an upper surface of the multilayer piezoelectric substrate, the IDT electrodes having at least partially rounded upper sides.

The embodiment of the invention provides a surface acoustic wave resonator, a filter, a radio frequency front-end module and electronic equipment, relates to the technical field of radio frequency, and is used for improving the suppression effect on a miscellaneous mode in the SAW filter. The surface acoustic wave resonator comprises a substrate, and a low-sound-velocity layer, a first high-sound-velocity layer, a piezoelectric layer and an interdigital electrode which are arranged on the same side of the substrate. And the material of the piezoelectric layer comprises LiNbO3 single crystals. The first high-sound-velocity layer is arranged on the side, away from the substrate, of the low-sound-velocity layer, the piezoelectric layer is arranged on the side, away from the substrate, of the first high-sound-velocity layer, and the interdigital electrode is arranged on the side, away from the substrate, of the piezoelectric layer. The first high-sound-velocity layer is arranged between the low-sound-velocity layer and the piezoelectric layer, so that the intensity of a rayleigh mode on the low-frequency side of a main mode in the surface acoustic wave resonator can be effectively inhibited.

The invention provides a filter, a radio frequency front-end chip and a radio frequency front-end module. The filter comprises an input terminal, an output terminal, a series arm resonator group, a parallel arm resonator group and a longitudinal coupling surface acoustic wave resonator. Wherein the longitudinal coupling surface acoustic wave resonator and the series arm resonator group are both connected to a series path between the input terminal and the output terminal, a first end of the parallel arm resonator group is connected between the longitudinal coupling surface acoustic wave resonator and the output terminal, and a second end of the parallel arm resonator group is connected with the grounding terminal. Through the position adjustment of the parallel arm resonator group, the passband loss can be reduced when the filter is used in cooperation with other filters.

The invention discloses a surface acoustic wave resonator, a filter, a multiplexer and a radio frequency front-end circuit. The surface acoustic wave resonator includes: a piezoelectric substrate; the interdigital transducer comprises a transition metal layer, a main metal layer and a protective layer, the transition metal layer is arranged on one side of the piezoelectric substrate, the main metal layer is arranged on one side, far away from the piezoelectric substrate, of the transition metal layer, and the protective layer is arranged on one side, far away from the piezoelectric substrate, of the main metal layer; the main metal layer comprises at least one elemental metal layer; the protective layer comprises a metal protective layer; and the mass density of the simple substance metal layer is greater than that of the metal protection layer. According to the invention, the main metal layer of the interdigital transducer is composed of the elemental metal layer whose mass density is greater than the mass density of the metal protection layer, so that miniaturization of the surface acoustic wave resonator can be realized.

The present disclosure provides a multi-coefficient coupled-mode surface acoustic wave resonator and a manufacturing method therefor. During operation of the surface acoustic wave resonator, at least two different piezoelectric coefficients are coupled and jointly excite acoustic waves. The multi-coefficient coupled-mode surface acoustic wave resonator comprises: a substrate; a piezoelectric layer, provided on the substrate; an electrode unit, provided on the surface of the piezoelectric layer and comprising at least one interdigital electrode pair; and a reflective grating unit, comprising at least two grating structures which are symmetrically arranged on the two sides of the electrode unit, wherein the equivalent density of the electrode unit is greater than 4000kg / m3. The electric field distribution is changed by changing the mass loading effect of the interdigital electrode pair and the ratio of the electrode wavelength to the thickness of the piezoelectric layer, such that at least two piezoelectric coefficients are mutually coupled to jointly excite acoustic waves, thus achieving the surface acoustic wave resonator having an electromechanical coupling coefficient exceeding 25%.

This surface acoustic wave resonator (1) comprises: at least one electrode (4) disposed on a substrate (3) and including an IDT electrode (41); and a plurality of load members (51) that are disposed on or in the substrate (3), are spaced apart from each other, and are composed of a dielectric material. Each of the plurality of load members (51) at least partially overlaps at least one corresponding electrode finger in a planar view of the substrate (3). The number of electrode fingers that overlap the plurality of load members (51) among the electrode fingers disposed in a first sub-region (3b1) and the number of electrode fingers that overlap the plurality of load members (51) among the electrode fingers disposed in a third sub-region (3b3) are each greater than the number of electrode fingers that overlap the plurality of load members (51) among the electrode fingers disposed in a second sub-region (3b2). The plurality of load members (51) include two or more load members (51) that overlap the electrode fingers disposed in the first sub-region (3b1) and two or more load members (51) that overlap the electrode fingers disposed in the third sub-region (3b3).

A surface acoustic wave resonator device and manufacturing method thereof, the surface acoustic wave resonator device has an interdigital electrode region including a first peripheral region, a first end region, a central region, a second end region and a second peripheral region, and includes: an interdigital transducer, disposed on a piezoelectric substrate and including interdigital electrodes located in the interdigital electrode region; an intermediate layer, disposed on the piezoelectric substrate and covering the interdigital transducer; an acoustic velocity adjusting layer, disposed on a side of at least a portion of the intermediate layer away from the piezoelectric substrate; and a passivation layer, disposed on a side of the intermediate layer away from the piezoelectric substrate, wherein the acoustic velocity adjusting layer is located in the central region, overlaps with portions of the interdigital electrodes located in the central region in a direction perpendicular to the piezoelectric substrate.

A surface acoustic wave resonator device and manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, disposed on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes located in the body region and respectively connected to the first and second interdigital electrode lead-out parts; and a conductive structure, disposed on a side of the interdigital transducer away from the piezoelectric substrate, and at least includes a body structure and a first sawtooth structure, the body structure continuously extends across the interdigital electrodes in the second direction, the first sawtooth structure is located at a side of the body structure, and at least a portion of the body structure and the first sawtooth structure overlap with end portions of the interdigital electrodes close to a periphery region in the third direction.

The invention relates to a particle sorting device and method.The device comprises a micro-channel, a bulk acoustic wave device and two first surface acoustic wave resonators, the two first surface acoustic wave resonators are located outside the micro-channel and used for generating standing waves with two wave nodes in the micro-channel, and the positions of the two wave nodes are the same as the positions of acoustic fluid tunnels on the two side edges of the bulk acoustic wave device; the effect of capturing particles by the acoustic fluid tunnels on the two side edges is enhanced; the two second surface acoustic wave resonators are positioned outside the micro-channel at the downstream of the bulk acoustic wave device and are used for generating a standing wave with a node in the micro-channel so as to move a part of particles released at the tail end of the bulk acoustic wave device to the position of the node; the particles which are released at the tail end of the bulk acoustic wave device and are not moved to the node positions generated by the two second surface acoustic wave resonators flow to the first sub-flow channel, and the particles which are released at the tail end of the bulk acoustic wave device and are moved to the node positions generated by the two second surface acoustic wave resonators flow to the second sub-flow channel. The sorting performance of the particles can be improved.

The invention discloses a filter circuit topological structure, a radio frequency module and electronic equipment, and relates to the field of filters, and the filter circuit topological structure comprises an input end and an output end; the N + 1 series resonator units are sequentially connected between the input end and the output end, and the first series resonator unit to the N + 1 series resonator unit are sequentially arranged on a series path from the input end to the output end; an ith parallel node is arranged between the ith series resonator unit and the (i + 1) th series resonator unit; the N parallel resonator units are sequentially a first parallel resonator unit to an Nth parallel resonator unit; the ith parallel node is connected with the grounding end through the ith parallel resonator unit, N is a positive integer, and i is a positive integer not greater than N; at least one of the first to Nth parallel resonator units is a first resonator unit including a plurality of surface acoustic wave resonators connected in parallel between a corresponding parallel node and a ground terminal.

The invention provides a surface acoustic wave resonator and a preparation method thereof, a filter and electronic equipment, and relates to the technical field of semiconductors. A metal layer is arranged on one side, deviating from a substrate, of a temperature compensation layer, namely, the metal layer is arranged above the temperature compensation layer, a dielectric layer is further arranged between the temperature compensation layer and the metal layer, and the orthographic projection of the metal layer in a first direction covers the tail end part of an interdigital electrode. The arrangement of the metal layer realizes a larger sound velocity difference by changing the sound velocity in the region, so that the transverse mode is reflected to different directions to avoid energy dissipation caused by resonance, and the purposes of suppressing miscellaneous mode interference, improving the Q value and improving the performance of the surface acoustic wave resonator are achieved. The dielectric layer can prevent the metal layer from being oxidized by the temperature compensation layer, so that the clutter suppression effect of the surface acoustic wave resonator can be improved.