365 results about "Surface acoustic wave resonators" patented technology

Either one of a transmission terminal connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and the other is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.

The invention relates to a taste cell sensor using a surface acoustic wave resonator. The taste cell sensor includes the surface acoustic wave resonator, which is encapsulated in a metal shell by vacuum. The surface acoustic wave resonator adopts ST cut quartz as a piezoelectric substrate material, is prepared by a photolithography process, the emitted surface acoustic frequency is 433MHZ. The taste cell sensor also includes a silk-screen printing carbon electrode, which is in series connection with the surface acoustic wave resonator. The silk-screen printing carbon electrode is firstly modified by amino acid and then coated with an NCI-H716 cell suspension solution. The taste cell sensor provided by the invention has the advantages of small volume, practicability and convenience, fast electrode response, high sensitivity, good batch repeatability, low cost and the like, can achieve high frequency, and can realize rapid real-time detection. The preparation method has the characteristics of simple preparation process, small material consumption, high process repeatability and controllability, and is convenient for batch production.

A tunable filter includes a circuit configuration in which variable capacitors are connected with surface acoustic wave resonators. The surface acoustic wave resonators each include a piezoelectric substrate made of LiTaO₃ or LiNbO₃, an IDT electrode made of an electrode material filled in a recess in an upper surface of the piezoelectric substrate, and a SiO₂ film arranged to cover the piezoelectric substrate.

The invention discloses a magnetoelectric surface-acoustic-wave magnetic-field sensor and a manufacturing method thereof and belongs to the technical field of electronic function materials and devices. The magnetoelectric surface-acoustic-wave magnetic-field sensor comprises a magnetostriction substrate, a metal buffer layer and a piezoelectric film, wherein the metal buffer layer is made of metallic titanium or chromium and arranged between the magnetostriction substrate and the piezoelectric film, interdigital transducers with two ports are arranged on the upper surface of the piezoelectric film, and the interdigital transducers and the piezoelectric film constitute a surface-acoustic-wave resonator. Each interdigital transducer comprises an input electrode, an output electrode, an input-end reflecting grating and an output-end reflecting grating, wherein the input-end reflecting grating is arranged on the outer side of the input electrode, and the output-end reflecting grating is arranged on the outer side of the output electrode. The thickness of the piezoelectric film ranges from 0.3-1 micrometer, the thickness of the magnetostriction substrate is larger than two times of wavelength of the surface-acoustic waves. By the aid of the high-orientation piezoelectric film and magnetostriction strips with uniaxial anisotropism and Young's modulus effect, the sensor is miniaturized, high in sensitivity and good in consistency. The manufacturing method is simple and applicable to probing of magnetic fields.

A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (−1°≦φ≦1°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°, which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied:

0.01λ≦G  (1),

where λ represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy η of the IDT satisfy the following expression:

and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression:

160≦N≦220  (19).

A surface-acoustic-wave filter couples a two-port surface-acoustic-wave resonator filter circuit coupled in parallel or in series with a two-port impedance circuit. The two-port impedance circuit has an impedance that creates a pole of attenuation, by making the open-circuit impedance of the surface-acoustic-wave filter equal to the short-circuit impedance. High attenuation over a wide range of stopband frequencies is obtained in this way, combined with steep roll-off between the passband and stopband.

The present invention provides a surface acoustic wave filter and others that reduce ripples in a reception frequency band while ensuring sufficient attenuation in a transmission frequency band. A surface acoustic wave filter includes a surface acoustic wave resonator that allows a reception frequency band to pass while attenuating a transmission frequency band, and a surface acoustic wave filter connected in series with the surface acoustic wave resonator to allow the reception frequency band to pass while attenuating the transmission frequency band. An inductor is connected to one end of the surface acoustic wave resonator, a connection point between the surface acoustic wave filter and the surface acoustic wave resonator, and/or the other end of the surface acoustic wave resonator.

A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed thereon. The surface acoustic wave resonator operates using a shear horizontal wave, and the interdigital transducer includes an electrode film made of a metal containing W or Ta as its main component and a thin film made of Al.

An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 μm) and RF-CMOS (0.18 μm) technologies are presented.

A surface acoustic wave device includes front stage and rear stage surface acoustic wave elements, a signal wiring connecting between the front stage and rear stage surface acoustic wave elements, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A surface acoustic wave device includes a front stage surface acoustic wave resonator, a rear stage surface acoustic wave element, a signal wiring connecting between the front stage surface acoustic wave resonator and the rear stage surface acoustic wave element, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A communication device includes the surface acoustic wave device described above, a receiver circuit or a transmitter circuit.

The invention discloses an SAW (Surface Acoustic Wave) device of a bus bar doubled as a reflecting grating type IDT (Interdigital Transducer) structure, comprising a surface acoustic wave filter and a surface acoustic wave resonator. The surface acoustic wave filter and the surface acoustic wave resonator comprise a packaging shell and tube cores of the surface acoustic wave filter and the surface acoustic wave resonator, wherein the two tube cores are electrically connected in the packing shell by using a conducting wire; and the tube cores comprise an input interdigital transducer with a bus bar doubled as a reflecting grating and an output interdigital transducer with a bus bar doubled as a reflecting grating, and the input interdigital transducer and the output interdigital transducer are etched on the surface of a piezoelectric monocrystal or a piezoelectric film. The bus bar doubled as the reflecting grating is in a triangular, circular or elliptic structure. Under the condition of same tube core areas, interdigital numbers and coupling hole diameters of the surface acoustic wave filter and the surface acoustic wave resonator with the IDT structure design, the sidelobe suppression is improved by more than 9dB, and the insertion loss is lowered by more than 12dB.

A surface acoustic wave device that has surface acoustic wave resonators connected in a multi-stage ladder arrangement, includes: two or more different pitches of comb-like drive electrodes of parallel-arm resonators (P1˜P3) and two or more different pitches of comb-like drive electrodes of series-arm resonators (S1˜S3); reflection electrodes (12, 14) placed at either side of a comb-like drive electrode having a pitch different from that of said comb-like drive electrode; and two or more different electrostatic capacitances of parallel-arm resonators and two or more different electrostatic capacitances of series-arm resonators.

A surface acoustic wave resonator includes a piezoelectric substrate, and a SAW resonator having an interdigital transducer. The interdigital transducer satisfies 0.15L≦W≦0.45L where W is the total of widths of all electrode fingers that form the interdigital transducer, and L is a length of the said interdigital transducer in a direction of SAW propagation.

A surface acoustic wave filter device includes balanced signal terminals, and surface acoustic wave filters respectively connected to the balanced signal terminals, and at least one surface acoustic wave resonator connected between at least one of the balanced signal terminals and a ground terminal.

A SAW filter comprises an IDT disposed on a piezo-electric substrate, wherein the IDT includes comb-shaped electrodes having a plurality of interdigital electrodes arranged in a propagation direction of surface acoustic waves and bus bars for connecting these interdigital electrodes, arranged in opposition, and the interdigital electrodes are crossed with one another. The IDT comprises one or more branch electrodes branched from the interdigital electrode and positioned in a non-overlap zone between an overlap zone at which the interdigital electrodes overlap and the bus bar, and the branch electrode includes a branch electrode body extending in a direction substantially orthogonal to the propagation direction of surface acoustic wave. The SAW filter can be applied to any of a longitudinally coupled multi-mode filter, a ladder type filter, a resonator, a filter having a resonator connected in series to a longitudinally coupled multi-mode filter, and the like. A SAW filter and a SAW resonator highly resistant to damages to the electrodes with high Q and low insertion loss can be provided.

The invention belongs to the technical field of surface acoustic wave sensing technology, particularly to a resonance type surface acoustic wave passive wireless array sensing system; the system comprises a signal transmitting and receiving process unit, and a plurality of sensor units arranged at the same or different space positions, wherein each sensor unit includes a resonance type surface acoustic wave sensor, a matching loop configured with each resonance type surface acoustic wave sensor cooperatively, a radio frequency coding switch unit connected with the matching loop and comprising a radio frequency coding switch, and a sensing antenna connected with the radio frequency switch unit; and the signal transmitting and receiving process unit is responsible for transmitting an intercarrier signal with certain frequency band, controlling breakover or cutoff state of the radio frequency coding switch, and detecting echo frequency characteristics of a surface acoustic wave resonator. The system not only keeps the advantage of the resonance type passive wireless sensor in far operating distance, but also overcomes and breaks through the shortage that the resonance type passive wireless sensor cannot be encoded in large scale.

A vibration detection system comprises a battery-less vibration sensor and an interrogator. The sensor comprises a single port surface acoustic wave resonator. The interrogator continuously transmits a carrier wave signal to the resonator while receiving a wave signal reflected from the resonator. The reflected wave signal includes components other than the transmitted carrier wave signal if the sensor senses a vibration event. Based the reflected wave signal, the interrogator judges whether the vibration event occurs.

A duplexer includes a transmitting filter including serial resonators and parallel resonators connected in a ladder configuration, and a receiving filter. A resonator of the serial resonators and the parallel resonators in the transmitting filter that is arranged closest to a common terminal of the transmitting filter and the transmitting filter includes a surface acoustic wave resonator, and at least one resonator excluding the resonator that is arranged closest to the common terminal includes a film bulk acoustic wave resonator.