10 results about "Shear horizontal" patented technology

This invention discloses a horizontal shear wave guided excitation device based on a rhombus-shaped coil, comprising an electromagnetic shielding shell, a permanent magnet, and a rhombus-shaped coil. The rhombus-shaped coil is suspended directly above the surface of the object to be tested, and the permanent magnet is located directly above the rhombus-shaped coil, which is covered by the electromagnetic shielding shell. By precisely designing the physical structure and geometric parameters of the excitation coil, a steady-state elastic wave conforming to preset conditions is excited on the surface of the metal workpiece under test. This device can effectively improve the signal-to-noise ratio of the sensing signal and effectively improve the detection probability and detection rate of surface microcrack defects, showing broad application prospects in non-destructive testing in various fields. By applying an AC excitation signal to the rhombus-shaped coil, a time-varying magnetic field is generated in the adjacent space; the eddy currents in the magnetic field environment are subjected to the Lorentz force, exciting SH waves propagating horizontally along the workpiece surface; this can significantly improve the signal-to-noise ratio of the sensing signal, which is beneficial for further defect processing and analysis.

Provided in the present application are a resonator, a chip and an electronic device. The present application relates to the technical field of resonators. The resonator comprises a substrate, a piezoelectric layer stacked on the substrate, and a plurality of interdigital electrodes, wherein the substrate and the piezoelectric layer are stacked, the plurality of interdigital electrodes are located on the side of the piezoelectric layer facing away from the substrate, and the plurality of interdigital electrodes are arranged side by side in a first direction, the first direction being parallel to the surface of the substrate. The substrate comprises a first material, and the first material has a first shear wave velocity V01, where V01=max(max{VSH,VSV}), VSH being the horizontal shear wave velocity of the first material in any direction, and VSV being the vertical shear wave velocity of the first material in any direction; the substrate has a shear wave velocity V1 in the first direction, where V1=max{VSH_x,VSV_x}, VSH_x being the horizontal shear wave velocity of the surface of the substrate in the first direction, and VSV_x being the vertical shear wave velocity of the surface of the substrate in the first direction; formula (I) is satisfied. Thus, leakage of shear bulk acoustic waves into the substrate can be effectively inhibited, thus optimizing device performance.

The application discloses a wideband and high-efficiency acousto-optic modulator in a shear wave mode and a preparation method thereof, and relates to the technical field of integrated optics. The acousto-optic modulator comprises, from bottom to top, a silicon substrate, a silicon dioxide layer and a lithium niobate-chalcogenide glass hetero layer. The lithium niobate-chalcogenide glass hetero layer comprises a lithium niobate thin film, a chalcogenide optical waveguide, an interdigital transducer and a reflection grating which are hetero-integrated on the lithium niobate thin film. The reflection gratings are symmetrically arranged about the interdigital transducer, and an oblique included angle is formed between the interdigital transducer and the chalcogenide optical waveguide. The acousto-optic modulator comprehensively utilizes the excellent acousto-optic characteristics of chalcogenide glass materials, the outstanding piezoelectric effect of the lithium niobate thin film and the oblique included angle arrangement of the interdigital transducer relative to the optical waveguide. The mechanical deformation of the horizontal shear wave in the acoustic aperture direction is fully utilized, the reflection grating is used for the enhancement of the acoustic wave, the Q value of the acoustic wave resonant cavity is improved, the modulation bandwidth is improved, and the problem of low acousto-optic modulation efficiency is solved.

The invention discloses an SH wave stress detection device and method with bilateral calibration and distance regulation and control, and relates to the technical field of nondestructive testing. According to the device, horizontal shear waves are generated through an omnidirectional excitation sensor, and signals are collected at double paths and symmetrical positions thereof through a receiving sensor. The method is characterized in that bilateral calibration compensation is implemented through two times of detection of symmetrical observation points, and errors caused by hardware clock jitter, coupling state fluctuation and the like are effectively reduced; meanwhile, a controlled initial sound path distance difference is actively introduced by adjusting the propagation distance, and an interference characteristic frequency point caused by stress is guided into an effective response bandwidth of the sensor. According to the method, the technical pain point that frequency domain feature recognition is limited by sensor bandwidth is solved, tiny stress sound velocity change is converted into remarkable movement of frequency domain extremum, and the sensitivity and robustness of stress detection are improved.

The present application relates to an elastic wave device, an acoustic surface wave filter, a communication system, and a vehicle, the elastic wave device comprising: a piezoelectric layer; the interdigital electrode is formed on the piezoelectric layer; the left side reflecting gate electrode and the right side reflecting gate electrode are located on the two sides of the sound wave propagation direction of the interdigital electrode respectively; the supporting substrate is arranged below the piezoelectric layer; wherein the propagation direction of the interdigital electrode is adjustable, and a longitudinal wave type leakage surface acoustic wave (LLSAW) mode or a horizontal shear type surface acoustic wave (SHSAW) mode is selectively excited by adjusting a sound wave propagation direction angle phi. According to the technical scheme, on-demand excitation of the LLSAW and the SHSAW is achieved on a single piezoelectric composite structure through the scheme of the adjustable propagation direction angle phi, meanwhile, the effects of low electrode loss and wide passband bandwidth are achieved, the high sound velocity characteristic is kept, clutter interference can be avoided, and the electromechanical coupling coefficient is increased.

The present invention discloses a sensor system for estimating respective amounts of different molecules in a biological liquid, and the sensor system includes: an electronic circuit module and a Shear Horizontal Surface Acoustic Wave (SH-SAW) sensor, wherein the electronic circuit module has more than two different impedance matching circuits for exciting and detecting a plurality of Surface Acoustic Waves (SAWs) with different frequencies, and the SH-SAW sensor has at least one transducer and a surface on which the plurality of SAWs propagate, and wherein the surface is covered with a probe to be bound with more than two different molecules.

Sensor-equipped device (100) for detecting an analyte in a fluid, comprising: a piezoelectric substrate (105) having an outer surface (105'); at least one R-SAW emitting interdigital transducer (111) positioned on the outer surface (105') and configured to emit Rayleigh-type surface acoustic waves, also known as R-SAW, in response to an electrical input signal, wherein the R-SAW is emitted along a first emission direction x; and at least one SH-SAW emitting interdigital transducer (112) positioned on the outer surface (105') and configured to emit shear horizontal-type surface acoustic waves, also known as SH-SAW, in response to an electrical input signal, wherein the SH-SAW is emitted along a second emission direction y. In particular, the piezoelectric substrate (105) is fabricated from a material selected from 64°Y-cut lithium niobate and 163°Y-cut lithium niobate so that the piezoelectric substrate (105) supports shear horizontal type surface acoustic waves as its dominant mode, and the dominant mode is defined as a surface acoustic wave exhibiting greater electromechanical coupling on the piezoelectric substrate (105). Furthermore, the first emission direction x and the second emission direction y have a relative angle a such that 80° < α < 100°.

The invention provides a resonator, a chip and electronic equipment. Relates to the technical field of resonators. The resonator comprises a substrate, a piezoelectric layer and a plurality of interdigital electrodes, the piezoelectric layer and the interdigital electrodes are stacked on the substrate, the substrate and the piezoelectric layer are stacked, the interdigital electrodes are located on the side, away from the substrate, of the piezoelectric layer, the interdigital electrodes are arranged side by side in the first direction, and the first direction is parallel to the surface of the substrate; the substrate comprises a first material, the first material has a first shear wave sound velocity V01, V01 = max (max {VSH, VSV}), VSH is a horizontal shear wave sound velocity of the first material in any direction, and VSV is a vertical shear wave sound velocity of the first material in any direction; the substrate has a shear wave sound velocity V1 in the first direction, V1 = max {VSHx, VSVx}, VSHx is a horizontal shear wave sound velocity of the surface of the substrate in the first direction, and VSVx is a vertical shear wave sound velocity of the surface of the substrate in the first direction; in this way, shear bulk acoustic waves can be effectively prevented from leaking into the substrate, and the performance of the device is optimized.

The invention discloses an uncalibrated stress measurement method and device based on horizontal shear waves and incremental deformation, and relates to the technical field of ultrasonic nondestructive testing, and the method comprises the steps: obtaining an ultrasonic horizontal shear wave excitation signal and an ultrasonic horizontal shear wave time domain signal; according to the ultrasonic horizontal shear wave excitation signal and the ultrasonic horizontal shear wave time domain signal, determining the propagation time of the ultrasonic horizontal shear wave in the test piece to be detected; according to the propagation time and the distance between the excitation point and the receiving point, determining the propagation speed of the ultrasonic horizontal shear wave in the test piece to be detected; and determining a stress value on a detection path from the excitation point to the receiving point of the test piece to be detected according to the propagation velocity. The method can avoid the measurement problem of the high-order elastic constant of the material, avoids the dependence of a stress measurement result on a calibration result, and effectively improves the accuracy of stress measurement.

An elastic wave apparatus, a filter apparatus, and a multiplexer. In the present application, a silicon substrate (5) having horizontal shear wave curvature less than -0.58 is provided, a piezoelectric layer (1) is provided on the silicon substrate (5), the Euler angle of the piezoelectric layer (1) being (0±2.5°, β±2.5°, 0±2.5°), wherein β satisfies 90°≤β≤150°, and an interdigital transducer being provided on the piezoelectric layer (1).