172 results about "Transverse mode" patented technology

An acoustic wave device, a radio frequency filter and an electronics module are provided. The acoustic wave device, comprises a layer of piezoelectric material, a pair of interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar through a central region of the interdigital transducer electrode towards an edge region of the interdigital transducer electrode, each of the plurality of electrode fingers having a width in a direction perpendicular to the extension of the electrode fingers that is smaller in the edge regions than in the central regions, and trench portions located in the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The acoustic wave device provides effective suppression of transverse modes.

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

The utility model discloses a surface acoustic wave device and a radio frequency front-end module. The surface acoustic wave device comprises an interdigital transducer, wherein the interdigital transducer comprises a first bus bar and a second bus bar which are oppositely arranged, an electrode finger and a plurality of gap electrodes; in the extending direction of the electrode fingers, an overlapping area is formed between the first bus bar and the second bus bar, a first area is formed between the overlapping area and the first bus bar, a second area is formed between the overlapping area and the second bus bar, and the first area and the second area are adjacent to the first bus bar and the second bus bar respectively; the plurality of gap electrodes are arranged in at least one of the first area and the second area, and the plurality of gap electrodes, the bus bars and the electrode fingers are arranged at intervals; wherein the plurality of gap electrodes form a first curve in the arrangement direction of the electrode fingers. According to the invention, the Q value near the anti-resonance point can be improved while the inhibition effect of the transverse mode is improved.

The invention relates to the technical field of filters, and discloses a resonator and a surface acoustic wave filter, and the resonator comprises an interdigital transducer and a transverse strip structure. The interdigital transducer comprises a first bus bar, a second bus bar, a plurality of first finger bars and a plurality of second finger bars; the first bus bar and the second bus bar are oppositely arranged, the same ends of the plurality of first finger bars are connected with one side, close to the second bus bar, of the first bus bar, and the same ends of the plurality of second finger bars are connected with one side, close to the first bus bar, of the second bus bar; the transverse strip structure is arranged in a target area of the interdigital transducer; the transverse strip structure comprises a plurality of first transverse strips and a plurality of second transverse strips, the first transverse strips and the second transverse strips are arranged in a crossed mode, the adjacent first transverse strips and second transverse strips are distributed in a staggered mode, and the first ends, in the first direction, of the first transverse strips are connected with the third ends, in the first direction, of the second transverse strips. According to the resonator provided by the invention, the Q value of the resonator can be improved while a transverse mode is effectively suppressed.

The invention relates to a piezoelectric resonator, which belongs to the technical field of micro electro mechanical systems, and comprises a resonant body on which micropore structures are periodically arranged; the resonant body is fixed on the substrate, and a cavity or an acoustic reflecting layer is arranged between the substrate and the resonant body; wherein the micropore structure and part of the resonance body around the micropore structure form an in-plane coupling unit which is used for exciting the coupling mode of the resonator. Compared with the prior art, the in-plane coupling units arranged in the x-y plane of the resonator can excite transverse modes in the x-axis direction and the y-axis direction at the same time, an in-plane two-dimensional transverse coupling mode is formed, and the transverse coupling mode is the basis for achieving the photoetching tuning characteristic of the resonator. Appropriate sizes and in-plane arrangement of the in-plane coupling units are defined through a photoetching process, and the resonant frequency of the resonator can be adjusted in a wide frequency band range.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The piezoelectric layer has a trench in the border region. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first width, a second portion with a second width between the center region and the first portion, and a third portion with a third width between the center region and the second portion. The second width is narrower than the first width and the third width.

The invention relates to the technical field of lasers, in particular to a vertical-cavity surface-emitting laser and a preparation method thereof, and the vertical-cavity surface-emitting laser comprises a substrate layer, an N-type DBR structure, a first spacing layer, an active layer, a second spacing layer and a P-type DBR structure which are stacked in sequence; wherein the P-type DBR structure is formed by alternately arranging a high-refractive-index P-type semiconductor layer and a low-refractive-index P-type semiconductor layer for a plurality of cycles, and the low-refractive-index P-type semiconductor layer is a P-type semiconductor layer containing an Al component; a low-refractive-index P-type semiconductor layer adjacent to the second spacing layer in the P-type DBR structure is used as a first oxidation limiting layer, and the molar fraction of Al component in the first oxidation limiting layer before oxidation is greater than 0.98. According to the invention, the single transverse mode output characteristic of the vertical cavity surface emitting laser under high power can be improved at least.

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

The invention relates to the field of electronic component preparation processes, in particular to a high-performance temperature compensation surface acoustic wave filter and a manufacturing method thereof. An interdigital transducer, wherein the interdigital transducer is located at one side of the piezoelectric substrate; the transition layer is located on the side, away from the piezoelectric substrate, of the interdigital transducer, and the transition layer covers the interdigital transducer and prevents metal elements of the interdigital transducer from diffusing outwards; the functional layer is located on the side, away from the interdigital transducer, of the transition layer, the functional layer covers an active area of a metal finger strip of the interdigital transducer to form a high-sound-velocity area, the end, away from the active area, of the metal finger strip of the interdigital transducer forms a low-sound-velocity area, and a sound velocity difference is formed between the high-sound-velocity area and the low-sound-velocity area; therefore, transverse mode clutters are suppressed; the temperature compensation layer is located on the side, away from the transition layer, of the functional layer, and the temperature compensation layer covers the functional layer and the piezoelectric substrate; lateral mode clutters in TC-SAW are suppressed, and metal diffusion is suppressed at the same time.

An acoustic wave device has a multilayer piezoelectric substrate (MPS) structure and a multilayer interdigital transducer electrode (IDT). The multilayer piezoelectric substrate includes a piezoelectric layer over a support substrate. An additional (functional) layer can optionally be interposed between the piezoelectric layer and the support substrate, which can facilitate bonding between these layers and provide temperature compensation. The multilayer IDT is disposed over the piezoelectric layer and includes a first layer of a first material with higher density and a second layer of a different material with lower density. The interdigital transducer electrode also includes (mass loading) strips disposed over (e.g., adjacent, in contact with) the second layer, which advantageously facilitate suppression of transverse mode.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first width, a second portion with a second width between the center region and the first portion, and a third portion with a third width between the center region and the second portion. The finger in the center region has a fourth width. The first width and the third width are wider than the second width and the fourth width.

The invention relates to a quasi-differential wavefront segmentation double-beam interference device with a planar light path structural design, which has the structural characteristic of a non-closed optical path for transmitting a measurement light beam in a one-way manner. Space coherent light of a transverse mode vector filtering mechanism based on the Huygens principle / phased array principle instead of homologous transmission time coherent light is used as each light source, and a non-closed optical path is realized under the cooperation of a one-way transmission mode on a divided measuring light beam. The problem that the sum of the loop wavelength increment or the frequency increment of a closed path interference device is zero is solved, so that the purpose of measuring the first-level effect of anisotropic physical parameters of a measured object in a linear system is achieved, and the device is particularly suitable for immersion type online measurement. The optical elements have stable performance and sound self-adaptive mechanism and self-diagnosis capability through careful layout of the optical elements; and the method also has wide application prospects in basic physical research and novel navigation / positioning systems. The invention also provides a differential wavefront segmentation and semi-transparent and semi-reflective mirror beam combination interferometer device based on the planar light path structure design, and a wavefront segmentation interferometer device based on the planar light path structure design and provided with a pre-crossing area and a bending type one-way-two-way-common mode combination light path structure. The invention relates to a wavefront segmentation interferometer device of a one-way-two-way combined light path structure which is designed based on a planar light path structure and adopts polarization light splitting-beam combination, optical rotation processing of a reference light beam and original path returning, and a use method of an interference device.

The invention discloses a surface acoustic wave filter and a multiplexer surface acoustic wave filter, and the surface acoustic wave filter comprises a first piezoelectric substrate and a first interdigital transducer which is arranged on the first piezoelectric substrate. The first interdigital transducer comprises a first bus bar, a second bus bar, a plurality of first electrode fingers and a plurality of second electrode fingers, the first bus bar and the second bus bar are oppositely arranged, the first electrode fingers are led out from the first bus bar and extend towards the second bus bar, the second electrode fingers are led out from the second bus bar and extend towards the first bus bar, and the first electrode fingers and the second electrode fingers are arranged at intervals; the plurality of first electrode fingers and the plurality of second electrode fingers are mutually overlapped to form a first overlapping area, and the boundary shape of the first overlapping area conforms to a trigonometric function curve in the sound wave propagation direction; and the shapes of the first bus bar and the second bus bar are matched with the boundary shape of the first overlapping region. The technical effects that the transverse mode can be inhibited, and the small-size surface acoustic wave filter can be realized are achieved.

Single-transverse-mode laser diodes that include a bowtie-shaped ridge waveguide. Related apparatuses, data storage devices, computing systems, and methods.

This application provides a semiconductor laser and a terahertz source for generating terahertz waves. The semiconductor laser includes: a substrate; a mesa located on the substrate; and a ridge waveguide and lateral coupling gratings located on the mesa, with the lateral coupling gratings located on both sides of the ridge waveguide. The lateral coupling gratings are configured such that the frequency difference between the fundamental transverse mode wavelength and the second-order transverse mode wavelength of the lasing light emitted by the semiconductor laser is 0.1 THz–10 THz. The semiconductor laser of this application, through the optimized configuration of the ridge waveguide and the lateral coupling gratings on both sides, precisely achieves simultaneous output of the fundamental and second-order transverse modes with a frequency difference on the order of terahertz. Combined with a polarization controller and a nonlinear crystal, it can stably output terahertz waves in the target frequency band. Compared with traditional solutions, the semiconductor laser of this application can simultaneously output the fundamental and second-order transverse modes with a frequency difference on the order of terahertz, offering advantages in miniaturization and low cost.

The invention discloses a bulk acoustic wave resonator. The bulk acoustic wave resonator comprises a first electrode, a piezoelectric layer and a second electrode which are stacked, the electrode of the bulk acoustic wave resonator further comprises at least one group of irregular edges, each group of irregular edges comprises a first edge and a second edge which are adjacent to each other, an included angle is formed between the extension direction of the first edge and the extension direction of the second edge, and the first edge and the second edge are provided with nonlinear electrode boundaries; wherein the irregular edges of different groups are the edges of different electrodes, and the irregular edges of the same group are the edges of the same electrode. The manufacturing process of the bulk acoustic wave resonator is simplified, the stability and reliability of the bulk acoustic wave resonator are improved, meanwhile, resonance of a transverse mode can be restrained, dense distribution and layout of the resonators are facilitated, the design of the resonators is simplified, and the cost of the resonators is reduced.

To achieve high-power single transverse mode laser, we here propose a supersymmetry (SUSY)-based triple-ridge waveguide semiconductor laser structure, which is composed of an electrically pumped main broad-ridge waveguide located in the middle and a pair of lossy auxiliary partner waveguides. The auxiliary partner waveguides are designed to provide dissipative modes that can phase match and couple with the higher-order modes in the main waveguide. By appropriately manipulating the gain-loss discrimination of the modes in the laser cavity, one can effectively suppress all the undesired higher-order transverse modes while keeping the fundamental one almost unaffected, thereby ensuring stable single-mode operation with a larger emitting aperture and accordingly a higher output power than a conventional single-transverse-mode ridge waveguide diode laser.

This invention discloses a passively mode-locked fiber laser with switchable transverse modes and an optical communication system, relating to the field of ultrafast optical technology. The passively mode-locked fiber laser comprises a pump source and a laser resonator. The laser resonator comprises a wavelength division multiplexer, a gain fiber, a few-mode isolator, a first polarization controller, a saturable absorber, a second polarization controller, a mode-selective photon lantern, and a few-mode coupler, all connected in sequence along the direction of light propagation. Compared to existing technologies, the present invention offers low insertion loss and high spatial mode selection flexibility, making it widely applicable in communications, industrial processing, detection, and other fields.

According to the laser generating device and the laser system, the image transmission device is introduced, the object image surface of the image transmission device is accurately overlapped with the two cavity reflectors of the resonant cavity, the important beneficial effects are achieved, the effective transmission distance of light waves between the two cavity reflectors is equivalently eliminated optically, and the laser generating device and the laser system have the advantages of being simple in structure and convenient to use. Therefore, the inherent diffraction effect and the mode selection capability of the resonant cavity are thoroughly inhibited; the direct result is that a large number of laser transverse modes with different orders are allowed to simultaneously meet oscillation conditions and start oscillation in a cavity, and light fields of the multiple transverse modes are combined into a large-mode-field output light beam with the spot size equivalent to the aperture of a gain medium after incoherent superposition. Moreover, the near-field energy distribution is converted from the conventional Gaussian distribution to super Gaussian distribution with a flat top and a steep edge.

An acoustic wave device, a radio frequency filter, and an electronics module are provided. The acoustic wave device includes a layer of carrier substrate, a layer of dielectric material, a layer of piezoelectric material, a pair of interdigital transducer electrodes, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar to the distal ends of the electrode fingers at an edge region of the interdigital transducer electrode, and trench portions located in the upper surface of the layer of piezoelectric material, said trench portions being overlapped by the edge regions of the interdigital transducer electrodes, the electrode fingers having a width at their distal end that is greater than the width of the rest of the electrode finger. The acoustic wave device provides effective suppression of transverse modes.

The present invention discloses a multimode four-wave mixing (FWM) automatic mode-locking device and method. The device comprises: a host computer, an electric polarization controller, a spatiotemporal mode-locked laser, an oscilloscope, and a spectrometer. The host computer is connected to the spatiotemporal mode-locked laser; the electric polarization controller is located within the spatiotemporal mode-locked laser; the inputs of the oscilloscope and spectrometer are connected to the spatiotemporal mode-locked laser, and the outputs of the oscilloscope and spectrometer are connected to the host computer. The host computer is configured to output a voltage to control the electric polarization controller, acquire data from the oscilloscope and spectrometer, and execute a FWM automatic mode-locking algorithm. The electric polarization controller receives a voltage signal from the host computer, regulates the polarization state and fiber length of the spatiotemporal mode-locked laser, and changes the energy coupling between different transverse modes within the spatiotemporal mode-locked laser. The present invention achieves automatic mode-locking of FWM by automatically detecting the FWM phenomenon.

The invention discloses an elastic wave device, a manufacturing method and a surface acoustic wave filter, and belongs to the technical field of surface acoustic waves. The elastic wave device comprises a supporting layer, a middle layer, a piezoelectric layer and an interdigital electrode layer which are stacked in sequence; in the first direction, gaps are formed between the first interdigital electrode and the second bus bar and between the second interdigital electrode and the first bus bar; in the second direction, an aperture area is formed at the crossed part of the first interdigital electrode and the second interdigital electrode; the side, close to the middle layer, of the supporting layer is provided with a first area, second areas located on the two sides of the first area in the first direction and spaced from the first area, and a third area located between the first area and the second areas, the surface of the first area is lower than the surfaces of the second areas, and the surface of the first area is higher than the surface of the third area. The areas of the supporting layer have different thicknesses, a low-sound-velocity area is formed on the edge of the aperture area, and excitation sound wave energy is restrained in the aperture area so as to restrain a transverse mode.

In one embodiment, the present disclosure is directed to a system for providing improved electric field uniformity to a plasma chamber receiving multiple signal inputs. The system includes one or more dielectrics distributing received energy to one or more antennas. The one or more dielectrics have N receiving areas. N circular waveguides are positioned over the N receiving areas. Each of waveguides has a mode converter converting a received first transverse mode signal to a second transverse mode signal to be output by the circular waveguide to the corresponding receiving area. At least one phase adjuster circuit adjusts the phase of at least one of the first transverse mode signals such that adjacent circular waveguides have their received first transverse mode signals differ in phase by approximately 360 / N.

The invention provides a 2-micron all-fiber noise-like space-time mode-locked laser generation and control device and method. The 2-micron all-fiber noise-like space-time mode-locked laser generation and control device comprises a laser generation subsystem and a device regulation and control and image feedback subsystem. Wherein the laser generation subsystem is used for generating a laser pulse with a high-order transverse mode and realizing noise-like space-time mode locking; and the device regulation and image feedback subsystem is used for controlling the output power and temperature of a pumping source, regulating an electronic polarization controller, reading light spot image data through a CCD (Charge Coupled Device) camera to form a closed-loop feedback loop, and realizing state self-recognition and fault self-repair of space-time mode locking through a computer intelligent algorithm. The method has the advantages of being high in practicability, simple in equipment, easy to operate and the like, and stable output of the 2-micron noise-like space-time mode-locked laser is achieved only through a CCD image feedback means without other detection equipment such as an oscilloscope and a spectrograph.

The invention discloses an elastic wave device and a radio frequency front-end module, and the elastic wave device is characterized in that a base end widening part is arranged on an electrode finger, and the projection of the base end widening part and the projection of the free end of an adjacent electrode finger in the extension direction of the electrode finger are at least partially overlapped, or a bus bar is subjected to opening processing, and an opening is rectangular; the non-opened part is at least partially overlapped with the projection of the free end of the electrode finger in the extending direction of the electrode finger, so that the suppression effect of a transverse mode can be improved, the suppression effect of a gap mode is improved, meanwhile, a miscellaneous mode on the left side of a resonance point of the elastic wave device can be suppressed, the Q value of the elastic wave device is further improved, and the reliability of the elastic wave device is improved. And the working performance of the elastic wave device is improved.

A bulk acoustic wave resonance device includes: an acoustic reflection layer; the first electrode layer comprises a first resonance part and a first extension part; a piezoelectric layer; the second electrode layer comprises a second resonance part and a second extension part; a dielectric layer, wherein a first dielectric part of the dielectric layer is located between a part of the first extension part and the piezoelectric layer; the load layer corresponds to the second extension part; the first attenuation area is used for attenuating sound waves; and the first limiting area is used for reflecting sound waves. The first-order transverse mode can pass through the first attenuation area without being affected, and then is fully reflected back to the resonance area in the first limiting area, so that transverse leaky waves are reduced; the high-order lateral parasitic mode entering the first attenuation region is attenuated, and only a small number or even no high-order lateral parasitic mode enters the first confinement region, so that the parallel impedance value and the corresponding Q value can be improved.

The application discloses a quantum controlled NOT gate, which comprises a first input transverse mode converter, a second input transverse mode converter, a first beam splitter, a second beam splitter, a third beam splitter, a fourth beam splitter, a fifth beam splitter, a first output transverse mode converter and a second output transverse mode converter. The controlled NOT gate operation is realized by arranging four transverse waveguide mode converters and five beam splitters, and the structure is simple and compact, the optical path is stable, and the entanglement efficiency between two-bit quantum inputs in the structure is high. When the controlled NOT gate operation is realized, the wavelength of incident light is not limited, the whole structure has wideband effectiveness, and the structure can also use wavelength encoding while using multiple transverse waveguide encoding, so that the waveguide mode encoding and wavelength encoding light can be multiplexed and demultiplexed in the same channel, and therefore the dimension of the controlled NOT gate calculation and communication can be expanded.

The invention provides a surface acoustic wave device, a filter and a radio frequency front-end module, the surface acoustic wave device comprises a piezoelectric substrate, an interdigital transducer and an accessory structure, and the interdigital transducer is arranged on the piezoelectric substrate; in the arrangement direction of two bus bars of the interdigital transducer, an intersection area is arranged between the two bus bars, and the intersection area comprises a middle area and edge areas located at the two ends of the middle area; wherein in the arrangement direction of the electrode fingers of the interdigital transducer, the intersection area is an area where the electrode fingers are mutually overlapped; each electrode finger comprises a widened part located in the edge area; the accessory structure is located in the edge area; wherein in the same edge area, the projections of the widened part and the accessory structure in the overlook direction are at least partially staggered along the length extension direction of the electrode fingers, and the acoustic impedance of the area provided with the widened part is different from the acoustic impedance of the area provided with the accessory structure. According to the surface acoustic wave device, the filter and the radio frequency front-end module, a high-order transverse mode and a low-order transverse mode can be well inhibited.

The invention discloses a compact arbitrary transverse mode laser. The laser comprises a pumping source, a pumping focusing optical system, a laser total reflective mirror, a laser gain medium, a laser output mirror and an astigmatism mode converter, the pumping source emits pumping light in a gain medium absorption band; the pump light is focused and then enters the gain medium; the gain medium absorbs the pump light and generates laser gain; the total reflective mirror highly reflecting laser wavelength and the output mirror partially transmitting the laser wavelength jointly form a simple linear resonant cavity. When the laser gain medium is inclined by a preset angle relative to the optical axis of the resonant cavity, meridian light and sagittal light pass through different optical paths of the gain medium to introduce astigmatism, an HG mode facing the directions of two astigmatism symmetry axes can be reproduced, and modes facing other directions cannot be reproduced due to the astigmatism effect. Therefore, when the pump light deviates from the axis of the resonant cavity in the directions of the two astigmatic symmetry axes, any high-order HG mode with mode ordinal numbers not being zero in the two directions can be excited, and any LG mode laser can be generated through astigmatic mode conversion.

The invention provides a surface acoustic wave structure, a surface acoustic wave filter and communication equipment, and is characterized in that the lengths of at least part of first interdigital electrodes are set to be sequentially increased in the surface acoustic wave propagation direction, the increasing amplitudes are sequentially reduced, and the lengths of second interdigital electrodes are set to be sequentially reduced in the surface acoustic wave propagation direction; and the reduction amplitude is sequentially reduced, so that the excitation intensity of the surface acoustic waves of the interdigital transducer in each region in the surface acoustic wave propagation direction is non-linearly changed, and the excitation intensity is weakened in the region where a part of first interdigital electrodes arranged at the rear part in the surface acoustic wave propagation direction are located. The weakening can improve the near-band suppression capability of the surface acoustic wave filter, so that the resonant frequency burr phenomenon caused by transverse sound waves can be reduced or suppressed, namely, the resonant frequency splitting phenomenon is not easily caused. In addition, the surface acoustic wave structure provided by the invention does not need to be additionally provided with a structure for inhibiting a transverse mode, and is simple in preparation process, low in preparation cost and small in occupied area.