354results about How to "Improve coupling coefficient" patented technology

A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped. The first semiconductor chip and the second semiconductor chip have non-opposed areas which are not opposed to each other. The first multilayer interconnect layer has a first external connection terminal in the non-opposed area, and the second multilayer interconnect layer has a second external connection terminal in the non-opposed area.

An optical waveguide propagates a laser beam. Main diffraction grating and sub-diffraction grating couple light propagating in the optical waveguide. The main diffraction grating and the sub-diffraction grating couple the light in such a manner that propagation in a second order transverse mode of the light propagating in the optical waveguide when both the main diffraction grating and the sub-diffraction grating are disposed, is suppressed more than propagation in the second order transverse mode of the light propagating in the optical waveguide when only the main diffraction grating is disposed.

This non-contact electric power supply device 6 is used to charge, for example, a battery of an electric vehicle, and electric power is supplied from a primary side, i.e., a primary coil 7 on an electric power supply side to a secondary side, i.e., a secondary coil 8 on an electric reception side based on a mutual induction effect of electromagnetic induction. The primary coil 7 and the secondary coil 8 are flatly and spirally wound in one plane, respectively, (by) making a plurality of parallel conducting wires a set and are twisted at a regular pitch interval along the way. A primary magnetic core 13 and secondary magnetic core 14 on which the primary coil 7 and the secondary coil 8 are disposed are made of ferrite and the like and are formed in a tabular shape. Outer surfaces of the primary coil 7 and the primary magnetic core 13 and outer surfaces of the secondary coil 8 and the secondary magnetic core 14 are covered and secured by molded resin 17, respectively. Foamed materials 18 are mixed in the molded resin 17.

The invention relates to a wireless electric energy transmission magnetic coupling structure, which comprises a magnetic structure at the transmission side and a magnetic structure at the receiving side. The structure is characterized in that the magnetic structure at the transmission side consists of a plurality of rectangular coils, the rectangular coils are distributed in a delta shape, the generated current flows and distributes between adjacent rectangular loops in a reverse flowing direction, the coils at the transmission side form a magnetic field transmission plane, the magnetic structure at the receiving side comprises coil groups which are respectively arranged in three orthogonal directions, and the coil groups respectively induce the magnetic field components in the three orthogonal directions. The structure has the advantages that the coupling coefficient is higher, the electric energy transmission efficiency is higher, the electromagnetic interference on the surrounding space is little, and the structure is widely applied to wireless electric energy transmission systems with various power grades.

The embodiment of the invention provides a flash memory unit for a shared source line and a forming method thereof. The provided flash memory unit for the shared source line comprises a semiconductor substrate, a source line, a floating gate dielectric layer, a floating gate, a control gate dielectric layer, a control gate, side wall dielectric layers, side walls, a tunneling oxide layer, a word line, a drain electrode and a source electrode, wherein the source line is positioned on the surface of the semiconductor substrate; the floating gate dielectric layer, the floating gate, the control gate dielectric layer and the control gate are sequentially positioned on the surface of the semiconductor substrate on two sides of the source line; the side wall dielectric layers are positioned between the source line and the floating gate as well we between the source line and the control gate; the side walls are positioned on the floating gate and the control gate, which are far from the source line; the tunneling oxide layer is adjacent to the side wall and is positioned on the surface of the semiconductor substrate; the word line is positioned on the surface of the tunneling oxide layer; the drain electrode is positioned in the semiconductor substrate at one side of the word line, which is far from the source line; the source electrode is positioned in the semiconductor substrate which is right opposite to the source line; and the floating gate is provided with a p-type doping end which is close to the source line, wherein the doping type of the floating gate is in a p type and the doping type of other parts is respectively in an n type.

There is provided a switching transformer which enables material costs to be reduced while the performance to be improved, permitting cost and size reductions, and which is suitable for mass production by ensuring good assemblability. Instead of using a conventional coil bobbin having a winding drum part, a center-leg-having core 3 having the shape of a substantially inverted T is integrated with a terminal block 1 having a substantially flat upper surface and terminals implanted in a lower surface. An electric wire 6a is wound around the outer circumference of a center-leg core 3b protruding from the upper surface 1a of the terminal block 1, thereby a coil 6 is mounted. A C-type core 4 is built into this assembly to form a switching transformer.

A transformer is provided, which includes a magnetic core, a primary coil module including a coil support arranged in the magnetic core and a primary coil formed on the coil support, an upper secondary coil module including an upper insulation molded body arranged on an upper portion of the primary coil module and an upper plate coil buried in the upper insulation molded body and arranged to face the primary coil, and a lower secondary coil module including a lower insulation molded body arranged on a lower portion of the primary coil module and a lower plate coil buried in the lower insulation molded body and arranged to face the primary coil.

A wireless energy and data transmission system for visual prostheses in the technical field of biomedical engineering, including: an external wireless device located outside the body, an internal wireless device located inside the body, and a data reverse transmission module. The external wireless device receives encoded images After the signal is modulated, it is transmitted wirelessly to the wireless device in the body. The wireless device in the body rectifies and demodulates and receives the driving power and the received signal respectively. The data reverse transmission module monitors the impedance and temperature information in the body, and transmits the data to the external coil through the internal coil , the external reverse demodulation circuit recovers the impedance and temperature information, and the external device adjusts the input power according to the state in the body. The invention has the characteristics of simple circuit, small volume, high efficiency and the like.

The invention discloses a split gate type flash memory which comprises a semiconductor substrate, a word line, two discrete storage bit units and oxidation layers, wherein the word line is located at the bottom surface of the semiconductor substrate; the two storage bit units are located at two sides of the word line; the oxidation layers are arranged between the two storage bit units and the word line; each storage bit unit comprises a first insulation layer which is located on the bottom surface of the semiconductor substrate, a floating gate which is located on the surface of the first insulation layer, a second insulation layer which is located on the surface of the floating gate, a control gate which is located on the surface of the second insulation layer and a side wall structure which covers the floating gate and the control gate; each floating gate comprises a first floating gate and a second floating gate; and the distance between each first floating gate and the word line is greater than the distance between each second floating gate and the word line. The distance between the first floating gates and the word line is greater than the distance in the prior art, so that the coupling capacitance between the floating gates and the word line is smaller than the capacitance in the prior art, the coupling capacitance between the word line and the floating gates is as small as possible and then the erasing efficiency and the read-write efficiency of the flash memory are improved.

The invention provides a CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and a manufacturing method thereof. The CMUT-based biochemical transducer comprises a sensitivity identification material layer, an upper electrode, a silicon dioxide film, a silicon strut, a lower electrode, a silicon dioxide insulating layer and a silicon substrate in sequence from top to bottom. According to the biochemical transducer, the metal lower electrode is completely isolated from the silicon substrate, the method which takes the substrate as the lower electrode in the conventional CMUT based biochemical transducer is replaced, the power consumption is reduced, the electric field strength between the upper electrode and the lower electrode is greatly improved, and the electromechanical coupling capability is strengthened; the lower electrode is only positioned inside a cavity formed by the silicon dioxide film, the silicon strut and the silicon dioxide insulating layer, so that the lower side of the film is effectively vibrated rather than covering the whole silicon substrate, the parasitic capacitance is effectively reduced, the electromechanical conversion ratio is further increased, and the effective utilization rate of electric energy is improved.

The invention provides an efficiently erasable and writable split-gate flash memory. The split-gate flash memory comprises a semiconductor substrate which has a source electrode area and two drain electrode areas which are positioned at the two sides of the source electrode area and separated by a channel area; source electrode wires which are positioned above the source electrode area and interconnected; two floating gates which are arranged at two sides of the source electrode wires as memory cells, are in L-shaped symmetrical distribution, are separated by an insulating dielectric layer, and side edges of which are respectively adjacent to the source electrode wires, part of the source electrode area and part of the channel area; two control gates which are respectively adjacent to thetwo L-shaped floating gates and separated by the insulating dielectric layer; and two word lines which are respectively adjacent to the two control gates, the side edges of the two L-shaped floating gates, part of the channel area and part of the two drain electrode areas, and are separated from each other by the insulating dielectric layer. In the efficiently erasable and writable split-gate flash memory, the programming voltage thereof can be further reduced, thus improving the device density.

The invention discloses a loosely coupled transformer device for wirelessly charging an electric vehicle. The device comprises an emission module, a reception module and two shielding cover plates, wherein the emission module and the reception module are coupled to each other. According to the technical scheme of the invention, the magnetic leakage at the back of a transformer can be well shielded by the shielding cover plates. Meanwhile, a magnetic conductive core structure is arranged in each shielding cover plate, so that the flow direction of the magnetic leakage at the back of the transformer can be guided by the magnetic conductive core structure. The coupling coefficient of primary and secondary sides is increased. Meanwhile, the loss of the cover plates is reduced and the efficiency of the whole device is improved. At the same time, a plurality of strands of litz wires are connected in parallel to form a coil, so that the coil loss of the transformer is reduced. A strip-shaped magnetic core reduces the weight of the transformer and increases the coupling coefficient of primary and secondary sides. By means of an insulating plate, the magnetic core and the coil can be conveniently fixed. Therefore, the above transformer device is good in shielding performance, simple, firm, high in coupling coefficient of primary and secondary sides, and high in overall efficiency. As a result, the device is very suitable for the wireless charging of electric vehicles.

The invention relates to an LTCC low temperature co-fired ceramic planar transformer. The transformer comprises a ferrite magnetic core composed of an upper magnetic core and a lower magnetic core. The transformer is characterized in that the transformer also comprises an LTCC planar transformer base plate provided with at least one group of planar coil component, each planar coil component comprises a primary coil with high coupling coefficient and a secondary coil; the LTCC planar transformer base plate is provided with one or three penetrating holes used for assembling the ferrite magnetic core; and the upper and lower magnetic cores separately penetrate the penetrating holes from the upper and lower sides of the LTCC planar transformer base plate and are butted and adhered together to form the ferrite magnetic core. Compared with the traditional planar transformer, the LTCC low temperature co-fired ceramic planar transformer of the invention has the following beneficial effects: the transformer of the invention has low direct current impedance, leakage inductance and distributed capacitance and can satisfy the design requirement of the resonance circuit; and as the magnetic core has good magnetic shielding, the transformer can inhibit the radio frequency interference.

The embodiment of the present invention discloses a wireless charge receiver and a wireless charge method. The method comprises the steps that: a receiver uses a first oscillating circuit to receive pulse energy emitted by an emitter, wherein the first oscillating circuit comprises a first receiving coil configured to convert pulse energy and output electric energy; when a voltage value output bythe first oscillating circuit is increased to a first reference voltage value, the receiver sends a power transmission command to the emitter through a communication module to allow the emitter to send energy according to the power transmission command, wherein the first reference voltage value is a working voltage threshold value of a processor; and the receiver receives the energy emitted by theemitter according to the power transmission command through a second oscillating circuit. A new coil is arranged at the receiver to increase the coupling coefficient with the emitter in the Ping stage and improves the degree of freedom. After a preset voltage value is reached, the receiver uses the receiving coil to receive the energy transmitted by the emitter so as to ensure the transmission efficiency while lifting the degree of freedom.

The invention discloses an optical delayer coupled through adopting multiple-mode interference, which adopts an all-pass filter structure; the all-pass filter structure is a structure of the sequent coupling of a plurality of micro ring resonant cavities and a bus waveguide, wherein the coupled segment between the micro ring resonant cavities and the bus waveguide is of a 2*2 multiple-mode interference coupler. Adopting the multiple-mode interference coupled structure, the invention can improve the coupling efficiency between the micro ring resonant cavities and the bus waveguide, and makes the optical delayer have wider operation bandwidth. The invention has high technical redundancy, is easy to manufacture, has small size, is suitable for dense integration, also has the characteristics of wide bandwidth and big time delay, the structural design with different splitting ratio increases the flexibility of the device application, and the delayer is suitable for being used as an optical buffer device of high-speed all-optical packet switching network in the future.