High-efficient erasing and writing flash memory in grating

Abstract

The invention provides an efficiently erasable and writable split-gate flash memory. The split-gate flash memory comprises a semiconductor substrate which has a source electrode area and two drain electrode areas which are positioned at the two sides of the source electrode area and separated by a channel area; source electrode wires which are positioned above the source electrode area and interconnected; two floating gates which are arranged at two sides of the source electrode wires as memory cells, are in L-shaped symmetrical distribution, are separated by an insulating dielectric layer, and side edges of which are respectively adjacent to the source electrode wires, part of the source electrode area and part of the channel area; two control gates which are respectively adjacent to thetwo L-shaped floating gates and separated by the insulating dielectric layer; and two word lines which are respectively adjacent to the two control gates, the side edges of the two L-shaped floating gates, part of the channel area and part of the two drain electrode areas, and are separated from each other by the insulating dielectric layer. In the efficiently erasable and writable split-gate flash memory, the programming voltage thereof can be further reduced, thus improving the device density.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and in particular to an efficient erasable split-gate flash memory. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electricall...

AI Technical Summary

Problems solved by technology

Nowadays, flash memory has occupied most of the market share of non-volatile semiconductor memory, and has become the fastest-growing non-volatile semiconductor memory. It will be a big challenge to reduce the size of the device to increase the storage density, so the development of high storage density flash memory is an important driving force for the development of flash memory technology

When traditional flash memory is moving towards higher storage density, due to structural limitations, it will face great challenges to further reduce the programming voltage of the device

Images