4results about How to "Improve working bandwidth" patented technology

The invention provides a compact broadband frequency insensitive rectifier for collecting electromagnetic energy in an environment, and aims to face the field of wireless power supply Internet of Things equipment. The invention finds that the double-branch LC series-parallel structure has a key characteristic that the impedance is insensitive to frequency change. By fully utilizing the characteristic, a simple matching network is designed to realize broadband performance. Through a simulation and measurement combined method, the operation effectiveness of the proposed topological structure is verified, and the design of the broadband rectification circuit is successfully realized. The rectification circuits of three different matching networks are compared, and the optimal circuit is determined. Under the input of 8 dBm and the load of 1.2 k omega, the peak power conversion efficiency of the rectifier reaches 74.75%. And the efficiency is kept above 60% at the relative bandwidth of 81.1%. Under the load condition of 0.9 k omega, the relative bandwidth with the efficiency of more than 60% is kept at 81.1%, and the bandwidth with the efficiency of more than 50% is expanded to 100%.

The application discloses a PIN diode with an arc-shaped gradually-changing tube core, which comprises a substrate and a diode packaging structure, wherein the diode packaging structure is arranged on the substrate; the diode packaging structure comprises a first anode metal plate, an anode air bridge, a tube core, a cathode metal plate and an N-type high-doped layer; the first anode metal plate is connected with a second anode metal through the anode air bridge; the tube core comprises the second anode metal, a P-type high-doped layer and a semiconductor I layer; the second anode metal plate is in contact with the P-type high-doped layer to form an anode ohmic contact electrode; the cathode metal plate is in contact with the N-type high-doped layer to form a cathode ohmic contact electrode; the P-type high-doped layer is arranged directly below the second anode metal plate; and the semiconductor I layer is arranged between the P-type high-doped layer and the N-type high-doped layer. The application can eliminate the electric field concentration effect and improve the maximum withstand power of the diode by adjusting the gradually-changing shape.

The application provides a Beidou navigation antenna, and relates to the technical field of antennas, and comprises an antenna plate, a first metal plate and a second metal plate.The antenna plate comprises a first dielectric substrate, a first radiator and a second radiator formed on two side surfaces of the first dielectric substrate respectively, and the first radiator and the second radiator constitute a dipole radiator; the first metal plate comprises a second dielectric substrate and a first metal patch formed on one side surface of the second dielectric substrate, and the first metal patch is provided with a first through hole which is consistent with the shape and size of the dipole radiator; and the second metal plate comprises a third dielectric substrate and a second metal patch formed on one side surface of the third dielectric substrate, and the second metal patch is provided with a second through hole which is consistent with the shape and size of the dipole radiator.The technical scheme provided by the application can greatly expand the working bandwidth of the antenna by loading the first metal patch and the second metal patch which are consistent with the shape and size of the dipole radiator on both sides of the dipole radiator.