4results about How to "Small reflection coefficient" patented technology

The application provides a thin-layer strong-absorption mechanically adjustable three-dimensional wave-absorbing structure, which comprises a bottom plate, a plurality of basic structure units arranged in a periodic array are arranged on the bottom plate, the basic structure unit comprises a hollow frame installed on the bottom plate, a three-dimensional resistive frequency selection substructure arranged on the outer surface of the hollow frame and a nested height-adjustable metal reflection three-dimensional substructure located in the hollow frame and installed on the bottom plate; the application has the following beneficial effects: the application realizes the absorption performance of a reflection coefficient lower than -20 dB in the range of 8-18 GHz through a simple and unique three-dimensional wave-absorbing structure design, and has good oblique incidence stability; further combined with the nested height-adjustable metal reflection three-dimensional substructure, the application realizes the adjustable reflection coefficient in a wide-band range and at any incident angle, thereby meeting the demand for a new type of electromagnetic wave-absorbing material with thin layers, small area density, strong absorption, adjustable wave-absorbing performance, simple structure and good oblique incidence stability.

The application discloses an antenna array based on circuit antenna integration. The antenna array comprises a substrate, a first antenna, a second antenna and a transistor. The substrate comprises a base layer and a ground layer. The base layer has a first surface and a second surface arranged oppositely. The ground layer is arranged on the first surface. The first antenna and the second antenna are arranged on the second surface at intervals. The transistor is arranged on the second surface and located between the first antenna and the second antenna. The transistor has a gate, a drain and a source. The first antenna is formed with a groove on a side facing the transistor. The first antenna is connected with a first connecting line extending towards the transistor. One end of the first connecting line is connected to a groove bottom surface of the groove. The other end of the first connecting line is electrically connected with the gate. The drain is electrically connected with the second antenna. The substrate is provided with a conductive hole. The source is arranged in the conductive hole and electrically connected with the ground layer. Thus, the design of an amplification circuit is cancelled, and the loss under a microwave frequency band is reduced.

The embodiment of the invention provides an electro-optical modulator, a photon chip and a light quantum computer. The electro-optical modulator comprises a grounding electrode assembly and a signal electrode assembly. The ground electrode assembly includes a first ground electrode and a second ground electrode. The signal electrode assembly is located between the first ground electrode and the second ground electrode. The signal electrode assembly includes a positive signal electrode and a negative signal electrode. The signal electrode assembly is provided with the groove, equivalently, the current path of microwaves is prolonged, the distributed inductance of a transmission line is increased, the microwave speed is reduced, speed matching is more effectively achieved, the large distributed inductance is beneficial to increasing the characteristic impedance of the electrode, impedance matching is achieved, the reflection coefficient of radio-frequency signals is reduced, and the transmission efficiency of the radio-frequency signals is improved. Flat frequency response and higher effective driving voltage are obtained, and bandwidth and modulation efficiency are improved. The overall width of the signal electrode assembly does not change obviously, so that the transmission quality and stability of the system are ensured.

This invention provides a decoupling method for SIW wide-angle scanning antenna arrays to solve the technical problem of coupling between array elements during phased array antenna scanning. The invention discloses a decoupling method for SIW wide-angle scanning antenna arrays that uses a genetic algorithm to optimize the presence or absence of metal pillars at specific positions between array elements, introducing new coupling to cancel out the original coupling, thereby achieving decoupling. The method includes the following steps: Step 1: Metallize the surfaces of four dielectric substrates and longitudinally slot them to form array elements; Step 2: Slot two array elements on one side and slot the other two array elements on both sides, removing part of the metal wall of the array elements; Step 3: Assemble the four array elements, placing the two array elements with slots on one side at both ends and the two array elements with slots on both sides in the middle, with adjacent array elements having slots facing each other; Step 4: Replace the removed metal walls with several equally spaced metal pillars to ensure good impedance matching in the target frequency band and reduce the active reflection coefficient at the ports; Step 5: Replace the metal pillars with discrete ports.