510 results about "Metal microstructure" patented technology

The invention discloses a dipole antenna of an RF chip, comprising two metal sheets, a feeder line and an earth wire, wherein two tabulate metal sheets are mutually parallel and are both provided with short circuit points which are respectively used for connecting the feeder line and the earth wire. The dipole antenna of the RF chip of the invention integrates novel artificial electromagnetic materials, thus the dipole antenna has abundant chromatic dispersion characteristics so as to form various radioactive modes, which not only can avoid fussy impedance matching network, but also can tune by adjusting a feeder line feeding and coupling mode, an earth wire accessing mode, the topological structure of metal microstructure, the position of metalizing through holes as well as the short circuit point position among the feeder line, the earth wire, an upper layer of sheet metal and a lower layer of sheet metal, thus providing great convenience for multiple frequency point impedance matching; meanwhile, the dipole antenna of the invention adopts a chip mode to fully utilize radiating area to approach to the Chu Limit antenna dimension limit principle, the construction of double chips also brings technical advantages for limiting electromagnetic wave and reducing effect on antenna operation by the outside.

A method of manufacturing a protruding-volute contact for attaining electrical continuity with an electrode of electronic equipment or inspection equipment, the method comprising the steps of forming a plastic mold (resist structure) with a metal mold; forming a layer consisting of metallic material on the plastic mold (resist structure) by means of electroforming; and performing convex formation of a metal microstructure made from the layer consisting of metallic material so as to form a spiral spring that protrudes volutedly outward. With such method, an inspection contact or coupling contact having high reliability and capable of attaining electrical continuity of large electric current can be produced at low cost.

The invention provides a thermopile infrared detector and a manufacturing method of the thermopile infrared detector. The thermopile infrared detector comprises a substrate, a dielectric supporting film, a thermopile, a metamaterial structure, a middle dielectric layer and a metal micro structure layer, wherein a cavity is formed in the substrate, the dielectric supporting film is located above the cavity and supported by the substrate, the thermopile is located on the dielectric supporting film above the cavity, the metamaterial structure is located above the thermopile and comprises a metal plane reflecting mirror, the middle dielectric layer is located on the metal plane reflecting mirror, the metal micro structure layer is located on the middle dielectric layer and comprises one or more structural period units, and each structural period unit comprises one or more geometric figure units having the light adsorption enhance effect within the infrared spectrum range. Due to the thermopile infrared detector, perform absorption within the infrared band broad spectrum range can be achieved, the infrared adsorption rate and the responding rate of the thermopile infrared detector can be improved, and the manufacturing method is compatible with a conventional CMOS technology.

The invention relates to a metamaterial based on liquid metal microfluidics, and belongs to the technical field of electromagnetic communication. The metamaterial solves the problem that the structureform and the material attribute cannot be dynamically adjusted after the existing metamaterial is designed and processed. The metamaterial comprises a bottom metal layer, a middle medium layer and amicrochannel array, wherein the microchannel array is arranged at the surface of the middle medium layer; the bottom metal layer and the middle medium layer are fixed film layers; liquid metal is arranged in a microchannel, and flows in the microchannel; a metal micro-structure is formed at the surface layer of the metamaterial. The metamaterial has the advantages that the liquid metal is driven by external force to flow in the microchannel, the length or width size of the metal micro-structure is adjusted, and the physical attributes of the metamaterial are changed; the application range is widened, and the practical application property is greatly improved.

The invention provides a manufacturing method of a PCB (Printed Circuit Board) with a metal micro-radiator. The manufacturing method comprises the following steps of: manufacturing a conventional PCB, manufacturing a metal bottom layer and a metal micro-radiator which are connected into a whole, and integrating the conventional PCB with the metal bottom layer and the metal micro-radiator. According to the manufacturing method disclosed by the invention, the metal micro-radiator with high heat conductivity is integrated with the conventional PCB, and heating elements, such as LEDs (Light Emitting Diode) and the like, can be arranged on the surface of the metal micro-radiator, thus the heat radiated from the heating elements during operation can be conducted to the metal bottom layer through the metal micro-radiator, and then is conducted to the outside of the PCB through the metal bottom layer; therefore, the problem of heat conduction between the heating elements and a metal board is effectively solved through the metal micro-radiator. The PCB (Printed Circuit Board) with the metal micro-radiator is an ideal carrier plate for the heating elements and arrays of the heating elements.

The method of fabricating metal microstructures includes the following steps:

• • a) taking a substrate (1, 2) that has a conductive strike surface (2);
  • b) to d) forming a first resin mould (3b) by UV photolithography, the apertures in the first resin mould revealing the conductive strike surface (2) of the substrate;
  • e) electroforming the first element (5) by galvanic deposition of a first metal material in the apertures of the first resin mould (3b),
  • f) removing the first mould (3b) around the first element (5) to expose the conductive strike surface (2) of the substrate;
  • g) to i) forming a new resin mould (7b) by UV photolithography, the apertures in the new resin mould revealing the first element (5), and the conductive strike surface (2) of the substrate;
  • j) electroforming the second element (10) by galvanic deposition of a second metal material in the apertures of the new resin mould (7b) to form said metal microstructure;
  • k) separating said metal microstructure from the substrate (1) and from said new mould (7b).

The invention discloses a wire electrode array structure preparation method for micro-electrochemical machining. The wire electrode array structure preparation method includes the steps of 1), pretreating a metal base; 2), manufacturing a graphical masking film; 3), subjecting the masking film to profound electrolytic corrosion, namely taking the metal base with the graphical surface as a positive electrode for electrolytic machining to obtain a tool negative electrode in a wire electrode template machined and manufactured in the profound electrolytic corrosion, and determining electrolytic corrosion time according to photoresist pattern width and electrolysis current density till to obtain a metal gate line array pattern with the point top; 4), removing back materials, namely removing the back materials corresponding to the manufactured metal gate lines to obtain a wire electrode array integrated with a frame. By means of the method, the metal microstructure array with cross sections different in shapes like square, rectangle and rhombus can be manufactured, so that the metal microstructure array with large depth-to-width ratio, high density and high machining quality can be efficiently realized.

The invention relates to a metamaterial which comprises at least one metamaterial sheet layer, wherein each metamaterial sheet layer comprises a substrate and a metal micro structure attached on the substrate, the metal micro structure comprises a plurality of fan-shaped structures obtained after at least one straight line with a certain width, which passes through the center of a circle, is etched on a solid circular metal sheet. The invention also provides a filter using the metamaterial. The filter comprises a resonant cavity and a harmonic oscillator arranged inside the resonant cavity, wherein the harmonic oscillator is made of the metamaterial. The dielectric constant of the metamaterial with the metal micro structure is greatly enhanced, and the metamaterial is applied to the filter so that the miniaturization of the filter is facilitated.

A method of fabricating medical devices and medical devices made from the method of fabricating a medical device, the medical device, without being exhaustive, may be a medical instrument, an implant, a prosthetic, a body support structure or the like. The method includes work-hardening a work-hardenable metal to achieve a desired microstructure of the metal, then fabricating a medical device in accordance with the desired microstructure utilizing the work-hardened metal. In one form, the desired microstructure is an elongated grain structure. The medical device is created from the grain-elongated metal such that the medical device is oriented relative to the plane of grain elongation. In a particular form of the invention, the medical device is a curved spine plate wherein elongated grains of the work hardened metal are oriented in a plane normal to a curvature of the spine plate. Work-hardening includes forging, cold rolling or hot rolling, and annealing prior to use in medical device fabrication. This creates a metal implant stock that has more strength and flexibility in compression and bending than without undergoing the present work-hardening. These properties are exploited in medical device design, fabrication, fabrication orientation and/or the like to create medical devices such as super strong implants.

The invention relates to a new-type light metamaterial and an antenna housing. The material comprises at least one material sheet, each material sheet comprises at least one dielectric substrate and an artificial metal microstructure arranged on the dielectric substrate. The dielectric substrate is composed of a polymer-based composite material or a foam material. The polymer-based composite material comprises a basal body and reinforced materials combined with the basal body. As the dielectric substrate is made of the polymer-based composite material or the foam material, various materials compensate with each other in the performance to generate synergistic effect; the combination performance of the materials is superior to the original ingredients so as to meet different requirements and fully display respective advantages; besides, the total weight is light and good structural design is realized.

The invention provides a high-sensitivity terahertz micro-fluid sensor based on band gap plasma resonance, and relates to the field of design of sensors. The high-sensitivity terahertz micro-fluid sensor comprises a cap, an etching groove, a metal array periodic structure layer, a micro-fluid channel, a metal reflective mirror, a substrate medium chip and a liquid inlet/output channel from top tobottom, wherein the cap is etched with the etching groove, and a metal micro-structure layer is attached to the etching groove; the metal plane reflective mirror is arranged on a substrate. The high-sensitivity terahertz micro-fluid sensor has the advantages that the metal array micro-structure uses the center-symmetric double-circular ring structure as a metal micro-structure array, so that the characteristics of no sensitivity to polarization and double resonance are realized; on the basis of double rings, the number of resonance rings can be increased, so as to realize the higher-order resonance response and multi-resonance detection; compared with the sensor without the etching groove, the sensitivity of the sensor provided by the invention is increased by 25% or above; compared with the existing sensor, the sensitivity is greatly increased; the structure is simple, and the processing and use are easy.

The invention discloses a metasurface polarization regulator. The metasurface polarization regulator is composed of five structural layers. The top layer and the bottom layer are period metal micro-structure layers, the middle layer is a metal film layer, and the top layer, the bottom layer and the middle metal layer are separated by the insulating medium layers. The regulator works in a near infrared band, and the whole thickness of a system is far smaller than the working wavelength; the transmission rate of normal incidence electromagnetic waves is higher than 80%; as geometric parameters of the structure and the physical performances of relative materials are adjusted, the whole phase interval of 0-360 degrees can be covered with the phase difference between transmitted waves of an x component and transmitted waves of a y component, and therefore free adjustment of the polarization state of the electromagnetic waves can be achieved; for example, the transmission polarization state of electromagnetic waves transmitted through linear polarization can be transformed into the circular polarization state, the elliptical polarization state or the linear polarization state or even the complete polarization inversion state.

The invention relates to a wave absorbing metamaterial which comprises a substrate and a plurality of artificial metal microstructures which are periodically arranged inside the substrate. When electromagnetic waves pass through the wave absorbing metamaterial, a relative dielectric constant and a relative magnetic conductivity of the metameterial are approximately equal. In the invention, a waveabsorbing principle different from a wave absorbing principle of a conventional wave absorbing material is adopted; an ideal wave absorbing effect is achieved by periodically arranging various artificial metal microstructures in the substrate and regulating the sizes of the artificial metal microstructures; and the wave absorbing metamaterial has the advantages that the weight is light, the thickness is low and an electromagnetic parameter is easy to regulate. Furthermore, the artificial metal microstructures of the wave absorbing metamaterial are three-dimensional structures and the artificial metal microstructures which are the three-dimensional structures can effectively absorb the electromagnetic waves in random incident directions in a three-dimensional space, so that the practicality of the wave absorbing metamaterial is improved.

The invention provides a TeraHertz wave electric control modulator. The modulator includes a lining layer and multiple rows of metal microstructure arrays. The metal microstructure arrays include conductive metal strips and multiple metal frames, wherein the metal strips and the metal frames are arranged on the surface of the lining layer; the metal frames are arranged in the length direction of the conductive metal strips, and the conductive metal strips and the metal frames form sealed patterns; each metal frame is composed of at least two conductive metal strips connected with each other through vanadium dioxide particle blocks. By means of external current, metal-insulated phase transition of particulate vanadium dioxide is controlled, that is to say that the conductivity of the vanadium dioxide particle blocks is adjusted and controlled, and therefore the resonant frequency of a metal microstructure is changed to achieve efficient and fast adjustment and control over the transmitted intensity of TeraHertz waves.

The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method. This photoelectric conversion device 1 includes a substrate 2 containing single crystalline titanium dioxide, adhesion layers 2c formed on a surface 2a of the substrate 2, metal microstructure bodies 3, each of which has a volume of 1,000 nm³ or more and 3,000,000 nm³ or less, arranged at predetermined intervals in a predetermined direction on surfaces of the adhesion layers 2c, a container 4 for containing an electrolyte solution L in an arrangement region of the metal microstructure bodies 3 on the surface 2a of the substrate 2, a conductive layer 7 formed on a rear surface 2b of the substrate 2, and a counter electrode 5 in contact with the electrolyte solution L in the container 4; and the metal microstructure bodies 3 adhere onto the substrate 2 through the adhesion layers 2c, a Schottky barrier is formed at an interface of the substrate 2 with the metal microstructure bodies 3, and photoelectric conversion is carried out for light in an infrared region by utilizing a plasmon resonance phenomenon.

The invention discloses a device and a method for controlling the residual stress on the surface of a metal microstructure. A laser micro shot blasting generation system and a measuring feedback system are respectively connected with a control system; a pulse laser beam is focused on an area to be subjected to shot blasting on the surface of a workpiece; incident X rays emitted by a synchronous accelerating irradiation light source enter a measurement box, are diffracted by the surface of the workpiece and then are received by a detector; electric pulse is amplified by an amplifier and enters a pulse height analyzer; signal pulse is transmitted to a counter, processed by a microcomputer and fed back to a computer control system by the microcomputer for error analysis and parameter correction; and a charge Coupled device (CCD) optical camera is used for positioning and monitoring a processing area on the surface of the workpiece. The invention effectively controls the residual stress on the surface of the metal microstructure, improves the mechanical properties of the metal micro component, prolongs the service life of the metal micro component, and enables the surface of the metal micro component to generate the residual pressure stress with the depth up to over 20mu m and the pressure ranging from -120 to -100MPa.

The invention provides a method for manufacturing a semiconductor device that comprises placing a metallic gate layer over a gate dielectric layer where the metallic gate layer has a crystallographic orientation, and re-orienting the crystallographic orientation of the metallic gate layer by subjecting the metallic gate layer to a hydrogen anneal.