High-sensitivity terahertz microfluidic channel sensor and preparation method thereof

一种微流通道、太赫兹的技术，应用在传感器领域，能够解决灵敏度有限、受限消逝波重叠程度等问题，达到高灵敏检测的效果

Active Publication Date: 2014-01-08
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned technologies are all based on the near-field evanescent wave superposition of the tested sample and the resonant structure, and the sensing is realized by measuring the change of the evanescent wave with the change of the refractive index of the tested sample, so it is limited by the overlap of the evanescent wave and the measured liquid degree, the improvement of its sensitivity is very limited

Method used

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  • High-sensitivity terahertz microfluidic channel sensor and preparation method thereof
  • High-sensitivity terahertz microfluidic channel sensor and preparation method thereof
  • High-sensitivity terahertz microfluidic channel sensor and preparation method thereof

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Embodiment 1

[0063] In this example, with figure 1 , image 3 The structure diagram shown and Figure 5 The process flow diagram shown is taken as an example for illustration. The preparation process of the high-sensitivity terahertz microfluidic channel sensor includes: firstly, the metal plane mirror 2 is prepared on the substrate 1 by depositing a metal thin film ( Figure 5 (a)); secondly, on the cover layer 5, the metal microstructure layer 4 is prepared by micro-nano processing methods such as photolithography, thin film deposition and lift-off technology ( Figure 5 (b)), then, on the substrate 1 and the cover layer 5, the bonding material layer 3 is prepared by a micro-nano processing method ( Figure 5 (c)); The substrate 1 is connected with the cover layer 5 by an interlayer bonding method, and a closed microfluidic channel 6 is formed in the middle ( Figure 5 (d)); Finally, form the input and output ports 7, 8, 9 and 10 on the substrate 1 or the cover layer 5 by etching or ...

Embodiment 2

[0068] The structure and process in this embodiment are the same as in Embodiment 1. As another optimized structural parameter, the metal microstructure layer 4 is a cross structure with a period of 56 microns, an arm length of 40 microns, and an arm width of 4 microns. The height of the fluid channel 6 is 4 microns. Depend on Figure 13 and Figure 14 The relationship between the frequency of the resonant absorption peak and the absorptivity with the change of the refractive index of the liquid in the fluid channel 6, it can be seen that the resonance causes a strong absorption, and when the refractive index of the liquid in the fluid channel 6 changes, the frequency of the resonant absorption peak and the absorption rate change. The sensitivity of the terahertz microfluidic channel sensor designed in the present invention is 0.98THz / RIU, which is 2.5 times of the sensor (sensitivity 0.38THz / RIU) that the microfluidic channel is integrated on the surface of the metal micros...

Embodiment 3

[0070] refer to Figure 6 Shown is a schematic diagram of a longitudinal section of a high-sensitivity terahertz microfluidic channel sensor in this embodiment. The difference from the first embodiment is that the surface of the metal plane mirror 2 and the metal microstructure layer 4 contains a layer of dielectric protection layer 12, such as two Silicon oxide, silicon nitride, aluminum oxide and SU-8 photoresist, etc., the thickness of which is 10-100 nanometers. The dielectric protection layer 12 introduced in this structure can better improve the stability of the terahertz microfluidic channel sensor.

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Abstract

The invention provides a high-sensitivity terahertz microfluidic channel sensor and a preparation method thereof. The sensor comprises a substrate and a cover layer; the substrate and the cover layer are respectively provided with a metal planar mirror and a metal microstructure layer; microfluidic channels are formed between the metal planar mirror and the metal microstructure layer; when liquid to be tested exists in the microfluidic channels, the composite structure formed by the metal microstructure layer, the liquid to be tested, and the metal planar mirror has strong absorption property caused by resonance in the terahertz wave band. The method comprises: respectively processing and forming the metal planar mirror and the metal microstructure layer on the substrate and the cover layer; fixedly connecting the substrate with the cover layer, forming the enclosed microfluidic channels between the substrate and the cover layer, arranging through holes communicated with the microfluidic channels on the substrate and / or the cover layer so as to form liquid channels for inputting or outputting liquid to be tested into or out of the sensor. The sensor of the invention is simple in structure, and easy to process and use, and has greatly improved detecting sensitivity when compared with existing sensors.

Description

technical field [0001] The invention relates to a sensor and a preparation method thereof, in particular to a sensor which combines microfluidic technology and utilizes the resonant absorption characteristics of microstructures to terahertz waves to improve liquid sensing sensitivity and a preparation method thereof, and belongs to the field of sensor technology. Background technique [0002] At present, there is an urgent demand for highly sensitive sensors in fields such as biomedicine, environmental monitoring, food safety and even national defense. Sensors based on optical methods have the characteristics of high sensitivity, wide application range, easy operation, and rich functions, so they have been vigorously developed. Among them, the label-free optical detection technology senses the change of the refractive index of the measured sample without any processing of the sample, so it can perform real-time quantitative detection of the sample in the natural state at low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31B81B3/00B81C1/00
CPCG01N21/3581B01L3/502707B01L3/502715B01L2300/0663B23K31/02C23C14/35G01N21/0303G01N21/05G01N21/3577G01N2021/0346
Inventor 陈沁孙福河
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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